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ミリ秒時間分解非接触温度測定法ミリ秒時間分解非接触温度測定法Application of TPJ to RTAApplication of TPJ to RTA Oscillation in Transient ReflectivityOscillation in Transient Reflectivity
0
10
Ref
lect
ivity
(%)
Time (ms)0 2010 30 40
p = 2.25 kWf = 9.8 L/mind = 3.0 mmv = 550 mm/s
Origin of the OscillationOrigin of the Oscillation
Ar : f (L/min)
cathode (W)
anode (Cu)
insulator
cooling water
DC power supply : p (kW)
gap : d (mm)
thermal plasma jet (TPJ)
10
(before annealing)
(during anneaing)
5102.1 −×=dTdnQ
R′
dnQ′
R
dnQQuartzscan : v (mm/s)
substrate
photodiode
motion stage
filterbeamsplitter
probe CW laser
DCアーク放電熱プラズマジェットによるミリ
秒急速熱処理実験の概略図.基板背面の光学系により温度測定をおこなう
Procedure of AnalysisProcedure of Analysis
Optical Simulation>
> Multiple reflection and interference
( )CTnQ °×+= −5102.15.1
2-d Heat Diffusion Simulation> Effective power transfer efficiency : η (%)> Width of plasma jet : w (mm)
J. H. Wray, et.al. J. Opt. Soc. Am 59 (1969) 774.
Comparison with Experimental Result
T. Okada, et.al. Jpn. J. Appl. Phys. 45 (2006) 4355.
Temporal Variation of TemperatureTemporal Variation of Temperature
600
900
1200
1500
1800
Tem
pera
ture
(K)
0 (surface)
50
depth (μm)
100200
300 500
p = 2.25 kWf = 9.8 L/mind = 3.0 mmv = 550 mm/s
実時間反射率による温度測定実時間反射率による温度測定
11
Temperature Profile
0
10
0
10
0
10
Ref
lect
ivity
(%)
Time (ms)0 2010 30 40
measuredsimulated
v = 900 mm/s
700 mm/s
550 mm/s
R
Position (mm)
Dep
thFr
omSu
rfac
e(μ
m)
0 5 10
0
100
200
0
100
200
0
100
200
T (K)16001200800400
Plasma Jet
v=900 mm/s
700 mm/s
550 mm/s
(a) (b) 3000 20 40 60 80 100 120
Time (ms)
A Noncontact A Noncontact Temperature Temperature Measurement Measurement Technique with Technique with Millisecond Time Millisecond Time Resolution has been Resolution has been SuccessfullySuccessfully
Accuracy < 30 K Accuracy < 30 K @~1670K@~1670K
従来法(石英基板)との違い従来法(石英基板)との違い
プローブレーザの選択
近赤外光近赤外光
例:例:1.3~ 1.5 1.3~ 1.5 μμmm前後前後
石英石英 SiSi
SiSiウエハへの適用ウエハへの適用
可視光可視光
例:例:0.5~ 0.6 0.5~ 0.6 μμmm前後前後
Accuracy of Temperature AnalysisAccuracy of Temperature Analysis
0
0
0.5
1
5 10 15 20Time (ms)
500 mm/s
12
熱物性値
熱伝導率 (Wcm-1K-1)
屈折率温度係数 (K-1)
石英石英 SiSi
2.2X102.2X10--22
1.3X101.3X10--55
3.3X103.3X10--11
1.4X101.4X10--44
Siウエハの方が超高感度測定可能
基本的には全く同じ原理で温度測定が可能
Tmax +0.6/- 1.2 KHigher Sensitivity is expected in the case of Si waferHigher Sensitivity is expected in the case of Si wafer
Optical emission spectrum of thermalplasma jet.Most of the significant lines are identified to beemission from Ar atoms as indicated in the inset.From the Boltzmann’s plot of the Ar lines, thetemperature of the plasma was roughly estimated tobe 8300 K.
電極材料による汚染の調査(1)電極材料による汚染の調査(1)Strong Emission Lines From Atomic Ar are Observed in NIRStrong Emission Lines From Atomic Ar are Observed in NIR
27
0200 300 400 500 600 700 800 900
Wavelength (nm)
0
10000
20000
30000
300 350 400 450 500 550
Emis
sion
Inte
nsity
(a.u
.)
Wavelength (nm)
324.8 nm (g)
510.6 nm
Emission Lines Cu I
521.8 nm
Identification of emission lines from Cu inthermal plasma jet.No emission lines from Cu was observed inthe optical emission spectrum of thermal plasma jet.
No Emission Lines From Cu was DetectedNo Emission Lines From Cu was Detected
Scanning Speed (Scanning Speed (vv) Dependence) Dependence PlasmaPlasma--Substrate Gap (Substrate Gap (dd) and Ar Flow Rate () and Ar Flow Rate (ff) ) Dependence under constant Dependence under constant vv of 500 mm/sof 500 mm/s
30
1200
1400
1600
0
1
2
3
4
400 600 800 1000 1200
Max
imum
Sur
fac
Tem
pera
ture
(K
aling Duration (m
s)
Scan Speed v (mm/s)
1000
1200
1400
0
1
2
3
4
1 2 3 4 5
Max
imum
Sur
fac
Tem
pera
ture
(K
aling Duration (m
s)
Plasma-Substrate Gap d (mm)
: f = 4.2 L/min
d (mm)1.53.05.0
T max (K) ta (ms) Rh (x105 K/s) Rc (x105 K/s)178114881266
2.62.83.0
3.872.932.23
1.471.000.69
Characteristic Values of TPJ Annealing at Different Gap (Characteristic Values of TPJ Annealing at Different Gap (dd))
Electrical conductivity of TPJ & ELA crystallized Si films before and after hydrogenation
100nm
2.6
0
(a)
RMS=0.4 nm
100nm
12.8
0
(b)
RMS=2.4 nm
Defect Reduction by Hydrogen Plasma Treatment @ 250C, 60sDefect Reduction by Hydrogen Plasma Treatment @ 250C, 60s
AFM images of (a) TPJ & (b) ELA crystallized Si films
Average P Concentration : 4.3 x 10Average P Concentration : 4.3 x 101717 cmcm--33
32
10-6
10-5
10-4
10-3
1300 1400 1500Elec
tric
al C
ondu
cti
Maximum Surface Temperature (K)
TPJ
ELA
10-6
10-5
10-4
10-3
10-2
1300 1400 1500Elec
tric
al C
ondu
cti
Maximum Surface Temperature (K)
TPJ
ELA
> TPJ Crystallized Films Have Lower Defect Density Compared > TPJ Crystallized Films Have Lower Defect Density Compared to ELA Filmsto ELA Films
Spin density NS in TPJ & ELA crystallized Si films
1017
1018
1019
1450 1500
200 250 300 350
Spin
Den
sity
Ns (c
m-3
)
Maximum Surface Temperature Tmax
(K)
Laser Energy Density (mJ/cm2)
ELA
TPJ
RC~1010
K/s
RC~105
K/s
ELAELA
TPJTPJ
熱プラズマジェットによるドーピング熱プラズマジェットによるドーピングDoped aDoped a--Si Films Deposited by PECVD of SiHSi Films Deposited by PECVD of SiH44+PH+PH33+H+H22 @ 250C and Crystallized by TPJ@ 250C and Crystallized by TPJAverage P Concentration in aAverage P Concentration in a--Si Film ; 1.0, 2.0, and 3.9%Si Film ; 1.0, 2.0, and 3.9%
Electrical conductivity of TPJ crystallized doped Si films as functions of annealing temperature Tmax.
Carrier concentration in TPJ crystallized doped Si films as functions of annealing temperature Tmax.
33
With increasing With increasing TTmaxmax, the resistivity decreases as , the resistivity decreases as low as low as 7.3X107.3X10--44 ΩΩcm (94 cm (94 ΩΩ/sq.)/sq.)
High carrier concentration of High carrier concentration of 8.7 x 108.7 x 102020 cmcm--33 is is achieved via solid phase crystallization (SPC).achieved via solid phase crystallization (SPC).