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Purdue UniversityPurdue e-Pubs
Open Access Theses Theses and Dissertations
Summer 2014
Numerical Simulation of Hydrogen Plasma inMpcvd ReactorDi HuangPurdue University
Follow this and additional works at: http://docs.lib.purdue.edu/open_access_theses
Part of the Aerospace Engineering Commons
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Recommended CitationHuang, Di, "Numerical Simulation of Hydrogen Plasma in Mpcvd Reactor" (2014). Open Access Theses. Paper 441.
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PURDUE UNIVERSITY GRADUATE SCHOOL
Thesis/Dissertation Acceptance
Thesis/Dissertation Agreement.
Publication Delay, and Certification/Disclaimer (Graduate School Form 32)
adheres to the provisions of
Department
Di Huang
NUMERICAL SIMULATION OF HYDROGEN PLASMA IN MPCVD REACTOR
Master of Science in Aeronautics and Astronautics
Alina Alexeenko
Timothy S. Fisher
Li Qiao
Alina Alexeenko
Wayne Chen 07/25/2014
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NUMERICAL SIMULATION OF HYDROGEN PLASMA IN MPCVD REACTOR
A Thesis
Submitted to the Faculty
of
Purdue University
by
Di Huang
In Partial Fulfillment of the
Requirements for the Degree
of
Master of Science in Aeronautics and Astronautics
August 2014
Purdue University
West Lafayette, Indiana
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ACKNOWLEDGEMENTS
I would like to express my deepest appreciation to my advisor, Dr. Alina Alexeenko for
her supportive guidance, constant help, and kindness throughout my pursuit of my degree.
I have the deepest appreciation for being given this great opportunity to complete this
research with her as my advisor.
I would like to thank my committee members, Professor Timothy Fisher and Professor Li
Qiao, for their teaching and serving in my committee. I have great appreciation to Dr.
Abbas Semnani at Birck Nanotechnology Center for his support and assistance in
electromagnetic modeling. I would like to thank Professor Allen Garner at School of
Nuclear Engineering for his support and assistance in utilizing COMSOL Multiphysics.
I have great appreciation to my colleagues, Venkattraman Ayyaswamy, Arnab Ganguly,
Andrew Weaver, Marat Kulakhmetov, Tony Cofer, Cem Pekardan, Devon Parkos, Siva
Sashank, Israel Sebastiao, Andrew Strongrich, Bill OβNeill and Nikhil Varma. They gave
me many opportunities for active discussion and persistent help throughout my research.
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TABLE OF CONTENTS
Page
LIST OF TABLES .............................................................................................................. v LIST OF FIGURES ........................................................................................................... vi LIST OF SYMBOLS ....................................................................................................... viii LIST OF ABBREVIATIONS ............................................................................................. x ABSTRACT ....................................................................................................................... xi CHAPTER 1. INTRODUCTION ................................................................................. 1
1.1 Background ............................................................................................... 1
1.2 Motivation ................................................................................................. 2
CHAPTER 2. ELECTROMAGNETIC SIMULATION .............................................. 4 2.1 Experimental System................................................................................. 4
2.2 Computational Domains ............................................................................ 6
2.2.1 3-D Computational Domain ................................................................7
2.2.2 2-D Computational Domain ..............................................................11
2.3 Boundary Conditions............................................................................... 12
2.3.1 Boundary Conditions for 3-D Model ................................................12
2.3.2 Boundary Conditions for 2-D Model ................................................14
2.4 Numerical Simulations and Results ........................................................ 14
2.4.1 3-D Numerical Simulation with ANSYS HFSS ...............................14
2.4.2 3-D Numerical Simulation with COMSOL Multiphysics ................15
2.4.3 2-D Axial Symmetric Simulation with COMSOL Multiphysics ......18
2.5 Assumptions Based on Simulation Results ............................................. 21
CHAPTER 3. PLASMA SIMULATION BASED ON FΓNERβS MODEL ............. 22 3.1 Introduction to the Plasma Model ........................................................... 22
3.1.1 Material Properties Modification Due to Plasma Effects .................23
3.1.2 FΓΌnerβs Model of Electron Number Density .....................................24
3.1.3 Drift-diffusion Model of Electron Number Density .........................25
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Page
3.1.4 Heat Transfer Model .........................................................................26
3.1.5 Coupling of Models ..........................................................................29
3.2 Computational Model of the Plasma Model ........................................... 32
3.3 Boundary Conditions of the Plasma Model ............................................ 32
3.3.1 Boundary Conditions of Heat Transfer Simulation ..........................32
3.3.2 Boundary Conditions of the Drift-Diffusion Equation .....................33
3.4 Simulation Results of the Plasma Model ................................................ 34
3.4.1 Results of the EM Simulations ..........................................................34
3.4.2 Results of the UDF ............................................................................38
3.4.3 Results of the Heat Transfer Simulation ...........................................45
3.5 Validity Tests for Standing Wave and Sinusoidal Oscillation Field
Assumptions ................................................................................................................. 48
3.5.1 Validity Test for Standing Wave Assumption ..................................48
3.5.2 Validity Test for Sinusoidal Oscillation Field Assumption ..............50
CHAPTER 4. CONCLUSIONS AND FUTURE WORK .......................................... 52 4.1 Conclusions ............................................................................................. 52
4.2 Future Work ............................................................................................ 53
LIST OF REFERENCES .................................................................................................. 55 VITA ................................................................................................................................. 61
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LIST OF TABLES
Table .............................................................................................................................. Page
Table 2.1 3-D mesh statistic.............................................................................................. 17
Table 2.2 2-D mesh statistic.............................................................................................. 20
Table 2.3 The comparison of solutions from all models .................................................. 20
Table 3.1 Electron including reactions and associated constant parameters [30] ............. 23
Table 3.2 Comparison of the EM simulation results ........................................................ 38
Table 3.3 Comparison of the ne simulation results ........................................................... 42
Table 3.4 Comparison of the Te simulation results .......................................................... 45
Table 3.5 Comparison of the Tg simulation results .......................................................... 48
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LIST OF FIGURES
Figure ............................................................................................................................. Page
Figure 1.1 Illustration of plasma environment in AX5200S MPCVD reactor ................... 2
Figure 2.1 The experimental system ................................................................................... 5
Figure 2.2 Schematic diagram of the MPCVD reactor at two stage positions [24]............ 6
Figure 2.3 Models of rectangular waveguide and TE-TM wave convertor ........................ 9
Figure 2.4 Cross-section of the plasma region.................................................................. 10
Figure 2.5 3-D computational domain .............................................................................. 10
Figure 2.6 2-D computational domain .............................................................................. 12
Figure 2.7 3-D model in HFSS including port .................................................................. 13
Figure 2.8 Electrical simulation results (HFSS 3-D) ........................................................ 15
Figure 2.9 3-D mesh built by COMSOL .......................................................................... 16
Figure 2.10 3-D mesh element quality histogram ............................................................. 17
Figure 2.11 Electrical simulation result (COMSL 3-D) ................................................... 18
Figure 2.12 2-D mesh built by COMSOL ........................................................................ 19
Figure 2.13 2-D mesh element quality histogram ............................................................. 19
Figure 2.14 Electrical simulation results (COMSL 2-D) .................................................. 21
Figure 3.1 Comparisons of original RHS and approximation .......................................... 28
Figure 3.2 Loop of solvers ................................................................................................ 29
Figure 3.3 Flow chart of algorithm ................................................................................... 31
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Figure ............................................................................................................................. Page
Figure 3.4 BCs of heat transfer simulation ....................................................................... 33
Figure 3.5 BCs of drift-diffusion model ........................................................................... 34
Figure 3.6 EM simulation results for 500 W input power ................................................ 35
Figure 3.7 EM simulation results for 400 W input power ................................................ 36
Figure 3.8 EM simulation results for 300 W input power ................................................ 36
Figure 3.9 Field strength variations on susceptor surface and along reactor axis ............ 37
Figure 3.10 ne simulation results for 500 W input power ................................................ 39
Figure 3.11 ne simulation results for 400 W input power ................................................ 39
Figure 3.12 ne simulation results for 300 W input power ................................................ 40
Figure 3.13 Electron density variations on susceptor surface and along reactor axis ...... 41
Figure 3.14 Te simulation results for 500 W input power ................................................ 42
Figure 3.15 Te simulation results for 400 W input power ................................................ 43
Figure 3.16 Te simulation results for 300 W input power ................................................ 43
Figure 3.17 Electron temperature variations on susceptor surface and along reactor axis 44
Figure 3.18 Tg simulation results for 500 W input power ................................................ 46
Figure 3.19 Tg simulation results for 400 W input power ................................................ 46
Figure 3.20 Heavy species temperature variations on susceptor surface and along reactor
axis .................................................................................................................................... 47
Figure 3.21 Test result for standing wave, with both diffusion and mobility enabled ..... 49
Figure 3.23 Comparison of the diffusion term and mobility term .................................... 50
Figure 3.24 Test result for sinusoidal oscillation field ..................................................... 51
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LIST OF SYMBOLS
πΈοΏ½β electrical field
π gas density
π0 permittivity of vacuum
π΅οΏ½β magnetic field
π‘ time
π0 permeability of vacuum
π½ current density
ππ (π,π,π,π) reaction rates
πΈπ (π,π,π,π) threshold energy of reactions
ππ permittivity due to effects of plasma
ππ conductivity due to effects of plasma
ππ angular frequency of plasma
π£π collision rate between electron and heavy particles
π angular frequency of the microwave
ππ ambient pressure in reactor
ππ temperature of heavy species
ππ number density of electron
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πΈπ threshold field strength to sustain plasma
ππ,πππ minimum number density of electrons estimated
ΠοΏ½β electron flux
π source of electrons
π·π diffusion coefficient of electrons
ππ mobility of electrons
πΌπ ionization rate
π
π recombination rate
ππ number density of heavy species
π Boltzmann constant
πΎ thermal conductivity
ππ electron temperature
π½ποΏ½οΏ½οΏ½β electron flux on walls
ποΏ½β normal vector of a surface
ππ thermal energy of electrons
π’ποΏ½οΏ½οΏ½οΏ½β velocity of electrons
πππ incident power from microwave
ππ energy loss due to electron including reactions
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LIST OF ABBREVIATIONS
CNT carbon nanotube
CVD chemical vapor deposition
PACVD plasma assisted chemical vapor deposition
EM electromagnetic
MPCVD microwave plasma chemical vapor deposition
UDF user defined function
RHS right hand side
PDE partial differential equation
BC boundary condition
PEC perfect electrical conductor
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ABSTRACT
Huang, Di. M.S.A.A., Purdue University, August 2014. Numerical Simulation of Hydrogen Plasma in MPCVD Reactor. Major Professor: Alina Alexeenko. A numerical study was conducted to build a model able to estimate the plasma properties
under different working conditions for pure hydrogen plasma in an AX5200S MPCVD
reactor as part of the synthesis process of diamonds and graphitic nano-petals. A plasma
model based on standing wave assumption and a linear estimation of ππ and coupled the
electromagnetic simulation, heat transfer simulation and calculations of plasma properties
was built in COMSOL Muitiphysics and tested with six different working conditions.
The reliability of COMSOL EM solver was tested through comparing the simulation
results with a benchmark EM solver, ANSYS HFSS. The validities of two assumptions
made about the electrical field, standing wave assumption and sinusoidal oscillation field
assumption, were tested by a PDE solver in COMSOL for utilizing the drift-diffusion
model of ππ. This numerical model estimated that electrical field ranged from ~9600 V/m
to ~12400 V/m, increased when power input increased and decreased when pressure
increased. The electron density ππ ranged from 1.33e16 m-3 to 1.73e16 m-3, and electron
temperature ππ ranged from 1.5 eV to 2.3 eV, both ππ and ππ increased when power input
increased and decreased when pressure increased. The gas temperature ππ ranged from
383 K to 590 K, increased when either power input or pressure increased.
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CHAPTER 1. INTRODUCTION
1.1 Background
Carbon nanostructures such as carbon nanotubes (CNTs), graphitic nano-petals and few-
layer graphene have desirable mechanical [1, 2], thermal [3, 4] and electrical [5-8]
properties; these properties have made applications such as hydrogen storage devices [9,
10], field emitters [11] and biosensors [12, 13] possible. For example, CNTs with a
coating of graphitic nano-petals are ideal for super capacitor applications because they
have been proven to be efficient nanostructures for maximizing the electrochemical
performance of MnO2 β a substance that is crucial to achieving high specific capacitance
and energy density [14]. Additionally, few-layer graphene has been found to be an
effective ultra-thin oxidation barrier coating in air [15] and under vigorous flow boiling
conditions [16].
Numerous techniques for growing the aforementioned carbon nanostructures have been
invented, such as exfoliation and cleavage [17], arc-discharge [18, 19], laser ablation [20],
thermal chemical vapor deposition (CVD) [21], and plasma-assisted chemical vapor
deposition (PACVD) [22]. This study focuses on the last technique because it provides an
efficient and relatively low-temperature synthesis [23] that is replicable and controllable.
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During the synthesis process, pure H2 was introduced into the reactor. Microwave
generated by a microwave generator delivers the energy to ignite plasma. After the
environment of the reactor reaches a steady-state, N2 and CH4 gases are introduced into
the reactor. The plasma environment would enhance the dissociation of CH4; the
resultant carbon atoms/ions would deposit on the substrate and complete the synthesis.
Fig. 1.1 shows an illustration of the plasma environment during the synthesis process.
Figure 1.1 Illustration of plasma environment in AX5200S MPCVD reactor
1.2 Motivation
The growth rate and quality of the carbon nanostructures are proven to be highly
dependent on the number density of atomic hydrogen, H, and methyl, CH3, on the surface
of the substrate [25]. These particles are produced by electron including reactions in the
plasma environment, which are closely related to the plasma properties (electron
temperature, ππ , electron number density, ππ , and heavy particle temperature, ππ ). A
numerical model able to estimate these properties is highly desirable for studying the
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response of plasma properties to different working conditions and for optimizing the
synthesis.
COMSOL Multiphysics was found to be the most suitable numerical tool for this study
because of its ability to simulate all physics phenomena required in a plasma modeling in
a fully coupled manner. A model for the pure hydrogen plasma environment before the
introduction of N2 and CH4 was built for this study to test the accuracy of the governing
equations and boundary conditions (BCs), to understand the validity of the assumptions
and to gain experience of multi-physics modeling with COMSOL.
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CHAPTER 2. ELECTROMAGNETIC SIMULATION
2.1 Experimental System
In this study, a SEKI AX5200S MPCVD reactor powered by an ASTeX AX2100
microwave generator with up to 1.5 kW (2.45 GHz) output power was used for
synthesizing carbon nanotubes, graphene and graphitic nanopetals over a variety of
substrates under different growing conditions [24]. The experimental system is shown in
Fig. 2.1.
The microwave power was transmitted by a rectangular waveguide, which included three
stabs able to change the internal geometry of the waveguide in order to minimize the
reflection loss of the incident power, from the generator in TE propagating mode and was
converted to a TM mode by a mode convertor structure on top of the reactor. The mode
convertor was bounded by a quartz plate to insulate plasma in a certain volume.
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Figure 2.1 The experimental system
The plasma region under the quartz plate included gas inlets, a graphite susceptor and a
gas outlet connected to an external mechanical pump. The gas inlets included three inlet
pipes for H2, N2 and CH4 respectively. Each kind of gas could be set to a specific mass
flow rate (in sccm) to optimize the synthesizing. The graphite susceptor could move
along the axis of the reactor away and toward from the quartz window. Fig. 2.2 shows a
schematic diagram of this reactor. A substrate is introduced on the graphite susceptor
stage through a hatch window. As shown in Fig. 2.2, the susceptor is accessible at a stage
height of 0 mm [24], while when plasma was ignited, this height was set to 53 mm [24]
above the original position. The external mechanical pump kept the internal pressure of
this reactor at a specific value required by the synthesizing.
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Figure 2.2 Schematic diagram of the MPCVD reactor at two stage positions [24]
2.2 Computational Domains
The goal of this study is to build a numerical model that is able to predict the plasma
properties under different working conditions of carbon nano-structure growth inside a
microwave plasma chemical vapor deposition (MPCVD) reactor. Since the plasma was
ignited by microwave power, all plasma properties to be solved were highly dependent on
the electromagnetic (EM) field around plasma region; it is necessary to obtain a solution
of EM field as accurate as possible. However, in order to simplify the starting stage of
this study, all effects on the electromagnetic field due to the appearance of plasma were
ignored therefore a model for pure EM simulation was set up. The governing equations
for this simulation are Maxwell equations:
β β πΈοΏ½β =ππ0
β β π΅οΏ½β = 0
β Γ πΈοΏ½β = βππ΅οΏ½βππ‘
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β Γ π΅οΏ½β = π0(π½ + π0ππΈοΏ½βππ‘
)
where πΈοΏ½β is the electrical field, π΅οΏ½β is the magnetic field, π is the electrical charge density,
π0 is the permittivity for vacuum, π0 is the permeability for vacuum, π½ is the local current
density and π‘ stands for time. These governing equations were solved in proper
computational domains, resolved the main elements of the experimental system, to
simulate the EM field inside the reactor.
2.2.1 3-D Computational Domain
In order to reduce the complexity of the numerical simulation, the experimental system
was modeled starting from the rectangular waveguide after the three tuning stabs and
some details like the hatch window and the substrate that would not affect the simulation
results as much as others were not included. The computational domain was divided into
four sub-domains: the rectangular waveguide, the TE-TM wave convertor, the quartz
plate and the plasma region.
The rectangular waveguide was modeled as a WR-340 standard calibrated for a work
band of 2.20-3.30 GHz [26]. The cross-section dimension was 86.36 mm X 43.18 mm
[26]; while its length, measured from the schematic diagram from Ref. 27, was set to 297
mm. Vacuum was assigned to the internal volume of the waveguide indicate the free
space inside.
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The TE-TM wave convertor was able to convert the TE mode microwave propagating
inside the rectangular waveguide to a TM mode microwave necessary for the axial
symmetric structures (rest of the MPCVD reactor). The convertor included a lower
cylindrical perfect electrical conductor (PEC) shell, a PEC hat and a coaxial transmission
line. The lower cylindrical PEC shell had a diameter of 120 mm [27] and height of 142
mm [27]. The PEC hat, placed above the rectangular waveguide, had a diameter of 60
mm and a height of 20.8 mm. The transmission line was constituted by a 30 mm diameter
outer PEC shell and a 10 mm inner diameter inner PEC cylinder; the height of the outer
shell was 5 mm and the height of the inner conductor was 150 mm. In addition, the outer
shell was placed on top of the lower PEC shell while the inner PEC cylinder started from
the same level of the top of the PEC hat. Dimensions of the transmission line and PEC
hat were estimated by measurement of the schematic diagram from Ref. 27. Vacuum was
also assigned to the internal volume of the convertor to indicate free space except for the
inner PEC cylinder of the transmission line, assigned as PEC. Fig. 2.3 shows the
computation models of rectangular waveguide and TE-TM wave convertor.
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Figure 2.3 Models of rectangular waveguide and TE-TM wave convertor
Below the convertor, a 120 mm diameter [28] quartz plate was introduced to insulate the
plasma region from the convertor. The thickness of the quartz plate was 10 mm,
estimated by measurement of the schematic diagram from Ref. 28. The plasma region
below the quartz plate included a 140 mm diameter [28], 162.2 mm height [28]
cylindrical PEC shell and a 120 mm diameter [28], 12.2 mm thick [28] susceptor stage is
placed 20 mm [28] above the bottom of the PEC cylindrical shell, 2 mm fillets were
added to both edges of the susceptor to reduce the field concentration due to the sharp
edge. The inlet and exit of gases were placed on top and bottom of the plasma region
respectively.
For the pure EM simulation, vacuum was assigned to the internal volume of the plasma
region because plasma effects were temporarily not under consideration while quartz was
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assigned to the quartz plate. Fig. 2.4 shows the cross-section of the plasma region
including the quartz plate and Fig. 2.5 shows the entire 3-D computational domain.
Figure 2.4 Cross-section of the plasma region
Figure 2.5 3-D computational domain
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2.2.2 2-D Computational Domain
Consider the plasma simulation required the couple of EM solver, heat transfer solver and
UDFs, it would be a time consuming process to simulate the entire 3-D model with the
three solvers. The fact that the plasma region is cylindrical allows physics only in that
region (heat transfer and plasma) to be simulated in a 2-D axially symmetric
computational domain. However the possibility of simulating EM field in a 2-D model
was not guaranteed and it was necessary to be tested by comparing results with 3-D
models.
This 2-D model excluded the entire rectangular waveguide and some part of the TE-TM
wave convertor. This model started from the top surface of the outer PEC shell of the
coaxial transmission line and was identical to the axial symmetric part of the 3-D model.
Material properties were also identical as used in the 3-D model. Fig. 2.6 shows the 2-D
computational domain.
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Figure 2.6 2-D computational domain
2.3 Boundary Conditions
The required inputs for the EM solver were material properties and boundary conditions
(BCs). Material properties were assigned to each sub-domain as previously described.
The BCs should also be properly assigned to assure the accuracies of the results.
2.3.1 Boundary Conditions for 3-D Model
ANSYS HFSS automatically assigned PEC to all boundaries as a default setting.
However, in order to indicate the microwave was transferred into the waveguide, a
microwave port BC was assigned to the right end of the rectangular waveguide. HFSS
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would automatically obtain the proper port mode according to the dimensions of the
waveguide and the frequency of the incident microwave. For the rest boundaries, the
default PEC BCs were kept to indicate EM field could only be normal to the boundary
[29]. Fig. 2.7 indicates the port BC in HFSS.
Figure 2.7 3-D model in HFSS including port
The BCs for 3-D simulations in COMSOL Multiphysics were identical as they were
assigned in HFSS except for the port. The port located on the same surface in COMSOL
as it was in HFSS, but the port mode, incident power and port phase needed to be set
manually. It was set to a TE-10 rectangular port with 500 W incident power and a port
phase equaled to Ο rad.
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2.3.2 Boundary Conditions for 2-D Model
Since the 2-D model started from top of the outer PEC shell of the transmission line, the
rectangular port did not exist in this model. The port of the 2-D model was placed on the
top surface of the transmission line included in this model. The port mode was set to
coaxial which always transmitted in a TEM mode and did not require a mode number.
The incident power was 500 W and the port phase was 0 rad. The port for this 2-D model
is labeled in Fig. 2.6.
2.4 Numerical Simulations and Results
The numerical simulations for EM field run on the previously described computational
domains by both HFSS and COMSOL. Since HFSS was commonly used and treated as a
reliable EM solver, the results from HFSS were utilized as a benchmark, while results
from COMSOL were compared with the benchmark to test the reliability of EM solver
built in COMSOL.
2.4.1 3-D Numerical Simulation with ANSYS HFSS
Before simulating, the tested frequency was set to 2.45 GHz which was equal to the
frequency of the microwave generator. The maximum iteration number was set to 25 and
the allowed tolerance was set to 0.03% with the consideration of the balance between
accuracy and computational time. ANSYS HFSS would automatically generate the mesh
with tetrahedral elements and refine it during iterations until a proper mesh size was
obtained to complete the simulation. At last, a scale factor of 500 was needed to be
included in the βedit sourceβ option to resolve the 500 W incident power.
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Figure 2.8 Electrical simulation results (HFSS 3-D)
The simulation results from HFSS are shown in Fig. 2.8. From the left part of the figure,
a concentration of electrical field could be observed at the center reactor, just above the
susceptor and the maximum value of the field on top surface of the susceptor was ~13000
V/m. In the right part of the figure, the stream line indicated the direction of the field. The
field pointed toward the susceptor would push the positive ions (e.g. CH3+, CH2
+, etc.)
toward the substrate during the synthesis process, and keep the nano-petals continuously
growing. This result agrees with the qualitative understanding of MPCVD mechanism.
2.4.2 3-D Numerical Simulation with COMSOL Multiphysics
In COMSOL, mesh needed to be built manually, and was set to a physics-controlled
mesh with extremely fine mesh size; while the iteration numbers and the tolerance were
managed by COMSOL itself. The mesh method was βFree Tetrahedralβ for 3-D domains
that COMSOL would fill the internal volume by tetrahedrons with sizes according to
mesh size. The mesh element quality was defined by:
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π3βπ· =72β3π
(β12 + β2
2 + β32 + β4
2 + β52 + β6
2)1.5
Where V is the volume of the tetrahedron; h1-h6 are the edge lengths. π3βπ· measures the
similarity of a mesh element to a regular tetrahedron, the value is better to be close to 1; a
low mesh element quality may potentially cause convergence issues during simulation.
Fig. 2.9 shows the mesh built by COMSOL; Table 2.1 shows the mesh statistic and Fig.
2.10 shows the mesh element quality histogram.
Figure 2.9 3-D mesh built by COMSOL
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Figure 2.10 3-D mesh element quality histogram
Table 2.1 3-D mesh statistic
Number of elements 1,380,585
Min element quality 0.1369
Ave. element quality 0.7457
Mesh volume 4,956,000 mm3
The simulation result from COMSOL is shown in Fig. 2.11. By comparing Fig. 2.8 and
Fig. 2.11, the results from both computational tools were qualitatively similar (consider
the position of field concentration and the field direction). However, the maximum value
of the field on top surface of the susceptor was ~16000 V/m. There was a 23.08%
difference between COMSOL and HFSS 3-D simulation results. The surface average of
the field on the susceptor surface, 6643 V/m, was also evaluated by COMSOL.
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Figure 2.11 Electrical simulation result (COMSL 3-D)
2.4.3 2-D Axial Symmetric Simulation with COMSOL Multiphysics
The 2-D mesh was also built as physics controlled mesh with extremely fine size. The
mesh method was βFree Triangularβ that COMSOL would fill the internal area of the 2-D
domains by triangles with sizes according to mesh size. The mesh element quality for a 2-
D mesh was defined by:
π2βπ· =4β3π΄
(β12 + β2
2 + β32)
It measures the similarity of a mesh element to regular trangle, and the criteria is identical
as 3-D mesh. Fig. 2.12 shows the 2-D mesh built by COMSOL; Table 2.2 shows the
mesh statistic and Fig. 2.13 shows the mesh element quality histogram.
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Figure 2.12 2-D mesh built by COMSOL
Figure 2.13 2-D mesh element quality histogram
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Table 2.2 2-D mesh statistic
Number of elements 7,138
Min element quality 0.7468
Ave. element quality 0.9786
Mesh area 18,170 mm2
The 2-D simulation result is shown in Fig. 2.14. By comparing Fig. 2.11 and Fig. 2.14
and Fig. 2.8, the 2-D simulation results agreed with the 3-D ones qualitatively in both
field concentration and field direction. The maximum value of field on top surface of the
susceptor was ~12400 V/m and the average over the top surface of the susceptor was
7358 V/m. The difference in maximum value was 5.38% compared to the 3-D simulation
results from HFSS. Table 2.3 includes the comparison among all three computational
models simulated in this chapter. The comparison confirmed the possibility to simulate
the EM field within a 2-D axial symmetric model.
Table 2.3 The comparison of solutions from all models
HFSS 3-D COMSOL 3-D COMSOL 2-D Max field on
susceptor ~13,000 V/m ~16,000 V/m ~12,400 V/m
Averaged field on susceptor 6,643 V/m 7,358 V/m
Diff. in max field (compare with HFSS) 23.08% 5.38%
Diff. in ave. field (compare with COMSOL 3-D)
10.76%
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Figure 2.14 Electrical simulation results (COMSL 2-D)
2.5 Assumptions Based on Simulation Results
Both HFSS and COMSOL simulated the EM field in frequency domain, therefore the
time dependent nature of the EM field could not be resolved by the results obtained. In
order to utilize the EM solver in the further studies, two assumptions were made based on
the simulation results. The first one, named standing wave assumption, assumed the EM
wave in the reactor would be standing waves everywhere after several reflections;
thereby the direction and magnitude of the EM field would not change in time. The
second assumption, named sinusoidal oscillation field, assumed the field in the reactor
would oscillate sinusoidally with an amplitude equaled the simulation results. The
validitiy of both assumptions were tested in the further stages of this study.
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CHAPTER 3. PLASMA SIMULATION BASED ON FΓNERβS MODEL
3.1 Introduction to the Plasma Model
In this stage of study, the present of plasma was introduced to the model. Physically,
plasma is a region of ionized gas; and specifically in this study, the ionization level is
around 10-6; and from the experimental observation, the electron density (also the
positive ion density) is at the order of 1016 [ 1π3]. The actual electron density can be
solved by either a drift-diffusion equation or an algebraic simplification called FΓΌnerβs
Law [32-34].
Since electrons and ions exist in the plasma region, the gas becomes conductive and
therefore materials properties related to the electrical field (conductivity and permittivity)
will be modified. The electrons under an external electrical field will be accelerated and
collide with other species (ions and neutral molecules); to resolve this phenomenon,
collisional reactions with the energy transfers associated should be under consideration.
In this study, four dominant reactions are modeled, shown in the following Table 3.1.
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Table 3.1 Electron including reactions and associated constant parameters [30]
Reactions ks(i,r,d,e) [m3/s] Es
(i,d,e) [eV] e + H2 2e + H2
+ 10-14 15.4 e + H2 e + H2
* 6.5 X 10-15 12.0 e + H2 e + 2H 10-14 10.0
H2+ + e H2 10-13
In this table, ππ is the reaction rate constant and πΈπ is the threshold energy associated with
the reaction. The last reaction represents the recombination which will happen once an
electron collides with a H2+ ion, so it does not require threshold energy. Collisions
besides these four kinds are considered as pure energy transfer to neutral species and will
be modeled by a volumetric heat source in a heat transfer solver. However, the
temperature change will affect the collision rate between species in the reactor; therefore
the heat transfer phenomenon should be coupled in the model. Eventually, the plasma
model includes three aspects of simulations, the electromagnetic, the material properties
change due to presence of plasma and the heat transfer.
3.1.1 Material Properties Modification Due to Plasma Effects
The material properties that need to be modified in the electromagnetic simulation due to
plasma effects were conductivity, Οp, and permittivity, Τp. The modifications were given
by the following equations: [31]
ππ =ππ
2π0π£π(π2 + π£π2)
ππ = 1 βππ
2
(π2 + π£π2)
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Where ππ is the angular frequency of plasma, π£π is the collisional frequency between
electrons and other species and π is the angular frequency of the microwave. These
parameters were evaluated by the following equations [30, 31]:
ππ = οΏ½π2πππ0ππ
π£π = 1.08 Γ 1010 Γ οΏ½πππποΏ½ π β1
π = 2π Γ 2.45πΊπ»π§ = 1.53938 Γ 1010π β1
where π is the electron charge, ππ is the electron number density and is discussed in Sec.
3.1.2 and Sec. 3.1.3, ππ is the mass of electron, Pg is ambient pressure in the plasma
region and Tg is the ambient temperature discussed in Sec. 3.1.4.
3.1.2 FΓΌnerβs Model of Electron Number Density
The electron number density is related to the electrical field and other parameters in a
complicated method which will be discussed in Sec. 3.1.3; however, this section
introduces an algebraic simplification developed by FΓΌner, et al. [32-34]. It states that the
local ππ is only related to the local electrical field strength linearly.
ππ = οΏ½πΎ Γ οΏ½οΏ½πΈοΏ½β οΏ½ β πΈποΏ½ + ππ,πππ (πππ οΏ½πΈοΏ½β οΏ½ > πΈπ)0
where Ξ³ = 3 Γ 1012 [ 1Vm2] [38], Em = 10000 [V
m] and ne,min = 1 Γ 1016 [ 1
m3] . Em and
ππ,πππ are calibrated with the experimental observation for this study. This simplification
was applied for a steady state simulation of ππ which required a time-independent
electrical field; therefore, the standing wave assumption was applied.
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3.1.3 Drift-diffusion Model of Electron Number Density
In reality, ππ is dependent not only on the electrical field strength. A more accurate
model is proved by the drift-diffusion equation [35]:
πππππ‘
+ πππ£ΠοΏ½β = π
where ΠοΏ½β is the local electron flux and π is the volumetric local electron source. These
terms are given by the following equations [35]:
ΠοΏ½β = βπ·ππ»ππ β πππππΈοΏ½β
π = πΌπ β π
π
The first term of ΠοΏ½β indicates the electron flux due to the diffusion effect; while the second
term indicates the flux due to electron motion forced by the external electrical field. For
hydrogen, the electron diffusion coefficient, De = 1.3Γ105
Pg[torr] οΏ½cm2
sοΏ½ [39], the electron mobility,
Β΅e = 0.37Γ106
Pg[torr] οΏ½cm2
VsοΏ½ [39]; while Ie and Re are the ionization and recombination terms
given by [30]:
Ie = nengksi exp οΏ½β
Esi
TeοΏ½
π
π = ππ2ππ π
ππ π , ππ
π and πΈπ π are reaction rate coefficients and ionization threshold energy listed in
Table 3.1; ππ = πππππ
is the number density of neutral molecule (H2), where π is the
Boltzmann constant and ππ is the electron temperature discussed in Sec. 3.1.4.
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This drift-diffusion model is a time-dependent model, but can also simplified to a steady
state one by removing the time derivative term, πππππ‘
. Both versions of this model were
tested and discussed in Sec. 3.5.
3.1.4 Heat Transfer Model
Since plasma contains electrons and heavy species (ions and neutral molecule) and the
velocity of these two components are very different, the temperatures to measure the
thermal motion of particles should be separated into electron temperature, ππ , and
temperature of heavy species, ππ. ππ, also known as ambient temperature in the plasma
region is simulated by a conductional heat transfer model with a volumetric heat source
given by [36]:
βοΏ½πΎβπποΏ½ + ππππ = 0
ππππ = 3πππππ£πποΏ½ππ β πποΏ½
ππ»2
where πΎ is the thermal conductivity and ππ»2 is the mass of a hydrogen molecule. The
electron temperature was calculated through the coupling of electron energy and the
microwave power and was given by [30]:
πππππ‘
+ β(πππ’ποΏ½οΏ½οΏ½οΏ½β ) = πππ β ππ
where ππ is the thermal energy of electron, π’ποΏ½οΏ½οΏ½οΏ½β is the velocity of electron, πππ is the
incident power from microwave and ππ is the power loss to the collisions (e.g. power
consumed by the electron including reactions). Under typical synthesis conditions,
β(πππ’ποΏ½οΏ½οΏ½οΏ½β ) is proven to be ten thousand times less than the incident power [30], and under
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steady-state, the time derivative πππππ‘
is zero. The model to estimate electron energy would
be simplified as:
πππ = ππ
Substituted with the expression for πππ and ππ:
πππ =π2
2ππ
π£ππ2 + π£π2 οΏ½πΈοΏ½β οΏ½
2; ππ = οΏ½πΈπ ππ ππ ππ₯π οΏ½β
πΈπ πποΏ½
π
The equation to obtain electron temperature was given by:
π2
2ππ
π£ππ2 + π£π2 οΏ½πΈοΏ½β οΏ½
2= οΏ½πΈπ ππ ππ ππ₯π οΏ½β
πΈπ πποΏ½
π
The summation was over the first three reactions in Table 3.1. However, the right hand
side (RHS) of the equation has three terms and was hard to solve for ππ , a one term
approximation was made for the RHS [30]:
ππΏ ππ₯π οΏ½βπΈπΏπππΌπΏ
οΏ½ = οΏ½πΈπ ππ ππ ππ₯π οΏ½βπΈπ πποΏ½
π
where EL = 18.5327 [eVΞ±L] [30], Ξ±L = 0.36757 [30] and pL is evaluated by [30]:
ππΏ = 2.464 Γ 1015 Γ οΏ½ππ
160 [π‘πππ]οΏ½ Γ οΏ½1000 [πΎ]
πποΏ½ [ππ/π ]
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Figure 3.1 Comparisons of original RHS and approximation
A comparison of the one term approximation and original RHS is shown in Fig. 3.1; it is
shown that the approximation is close enough to the original RHS in the region of this
study (ππ β 2.5 [ππ]). With this approximation, the ππ can be expressed as [30]:
ππ = {πΈπΏ
ln [ππΏ/ππππ ]}1/πΌπΏ
where ππππ is a function of the electrical field strength [30]:
ππππ =π2
2ππ
π£ππ2 + π£π2 οΏ½πΈοΏ½β οΏ½
2
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3.1.5 Coupling of Models
The multi-physics coupling of this plasma model was achieved through the COMSOL
Multiphysics. In this model, the coupling meant solutions from one solver will transferred
to another as an input; and solvers would form a loop, iterated until self-consistent
solutions were obtained. Fig. 3.2 shows the loop of solvers and the solutions transferred
among them. In this stage of modeling the multi-physics coupling, only FΓΌnerβs Model
was included in the loop; while the drift-diffusion model was simulated outside of the
loop and was only for testing the validities of the two assumptions made in chapter 2.
Figure 3.2 Loop of solvers
The first step of this model was to obtain an electromagnetic solution from a EM solver
with plasma effects estimated by some initial guesses. This solution was then used to
calculate ππ , ππ , ππ , ππππ , ππ and all the parameters associated with them. The
calculations were completed in UDFs and indicated the beginning of the loop of solvers.
The solutions from the EM solver and the UDFs were then transferred to a heat transfer
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solver to calculate ππ. After that, the updated ππ was transferred to the second UDFs and
parameters related to ππ get renewal. At last, the latest updated ππ and UDFs solutions
were transferred to the other electromagnetic solver which solves the field with the
effects on ππ and ππ . With the end of the loop, solution from the second EM solver,
instead of the pure EM solver, was transferred to the beginning of the loop and the next
iteration started. In order to obtain self-consistent solutions, this solver loop should be run
several times until the current solution was identical as the previous one. Specifically for
this plasma model, number of iterations should be equal or larger than five. Fig. 3.3
shows a flow chart of the algorithm of this model.
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Figure 3.3 Flow chart of algorithm
Finally, after completed the simulations based on FΓΌnerβs Model, the solutions were
transferred to a PDE solver for the drift-diffusion equation. The solutions from the PDE
solver were used to examine the validities of the standing wave assumption and the
sinusoidal oscillation field assumption.
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3.2 Computational Model of the Plasma Model
The geometrical setup of the computational model were identical as the 2-D simulation of
pure EM field in COMSOL Multiphysics, described in chapter 2, including the sub-
domain setups and mesh setup. However, since the effects on material properties due to
plasma and heat transfer phenomenon were under consideration in the plasma region, the
material used in that sub-domain should be replaced. A user defined gas based on the
hydrogen built in COMSOL material library was introduced to the plasma region. The
conductivity and relative permittivity were set to be ππ and ππ calculated by the UDFs
described in Sec. 3.1, and COMSOL automatically completed the evaluation of the
thermal properties of the material.
3.3 Boundary Conditions of the Plasma Model
The plasma model contained three aspects of simulation and each one required a proper
set of boundary conditions. The boundary conditions for EM simulation are identical as
the pure EM simulation described in chapter 2; and the UDFs were a set of algebraic
equations which did not require boundary conditions. BCs of heat transfer simulation and
the drift-diffusion equation were discussed in this section.
3.3.1 Boundary Conditions of Heat Transfer Simulation
The boundaries of the heat transfer simulation contained three parts, the walls of the
reactor, the gas inlet and the gas exit. The walls of the reactor were modeled as thermal
insulations that there was no heat flux through the walls. The gas inlet was modeled as a
constant temperature boundary with ππ = 293.15 [πΎ], the room temperature; and the gas
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exit was modeled as an outflow surface that the heat generated by the heat source left the
reactor through the surface to maintain a steady temperature in it. Fig. 3.4 shows the
boundary conditions of the heat transfer simulation.
Figure 3.4 BCs of heat transfer simulation
3.3.2 Boundary Conditions of the Drift-Diffusion Equation
In the drift-diffusion model of electrons, the boundaries of the plasma region were
assumed to be perfect absorption wall that no electron was reflected back to the plasma
region when it hit the boundary. This assumption was equivalent to a free boundary to
electron which meant all electrons would pass through the boundary without any
resistance. The flux on a free boundary [36] was set to be the BC for this model:
π½π =14
(8ππππππ
)1/2ππποΏ½β
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Where Je is the electron flux, nοΏ½β is the normal unit vector of a boundary. Fig. 3.5 shows
the BCs of the drift-diffusion equation.
Figure 3.5 BCs of drift-diffusion model
3.4 Simulation Results of the Plasma Model
Six experiments were run on the plasma system at different power levels (300 W, 400 W
and 500 W) and pressure inside the reactor (10 torr and 30 torr). In order to compare with
the experimental results, six computational cases of the plasma model were tested with
the same operating conditions as the experiments.
3.4.1 Results of EM Simulations
Fig. 3.6 β Fig. 3.8 show the results of EM simulations from the six cases. Each of them
was qualitatively similar with the simulation result shown in chapter 2 in both position of
the field concentration and the field direction. Table 3.2 includes maximum field strength
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on top surface of the susceptor and average value of field over the top surface of
susceptor for each case. Fig. 3.9 shows the extracts of the field strength on the top surface
of susceptor and along the axis of the reactor. Electrical field strength on top surface of
the susceptor increased when input power increased but decreased when reactor pressure
increased. These trends were to be expected because an increase in input power enhanced
the energy density in the reactor, therefore, the field strength; while an increase in
pressure elevated the collision rate and thereby increased the energy loss of electrons due
to collisions, would result in a reduction of number density of electron. This effect gave
an increment in permittivity as feedback and eventually reduced the field strength.
Figure 3.6 EM simulation results for 500 W input power
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Figure 3.7 EM simulation results for 400 W input power
Figure 3.8 EM simulation results for 300 W input power
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Figure 3.9 Field strength variations on susceptor surface and along reactor axis
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Table 3.2 Comparison of the EM simulation results
10 torr 30 torr
Max Ave. Max Ave.
500 W 12,450 V/m 7,384 V/m 12,400 V/m 7,339 V/m
400 W 11,150 V/m 6,591 V/m 11,110 V/m 6,576 V/m
300 W 9,630 V/m 5,696 V/m 9,633 V/m 5,699 V/m
3.4.2 Results of the UDF
Fig. 3.10 β Fig. 3.12 show the results of ne, Fig. 3.14 β Fig. 3.16 show the results of Te
from the UDFs. In 400 W and 500 W cases, both ne and Te concentrated above the center
of the susceptor, where the plasma was expected to exist. However, in the 300 W cases,
ne and Te were almost zero in the plasma region, indicated that plasma did not ignite in
these cases. Table 3.3 and Table 3.4 include maximum value on top surface of the
susceptor and the average value over the top surface of susceptor of ππ and ππ. Fig. 3.13
and Fig. 3.17 show the extracts of the electron density and electron temperature on the
top surface of susceptor and along the axis of the reactor. Both of them increased when
the input power increased and decreased when the pressure increased. These trends
behaved similarly as the electrical field which was to be expected because they were
positively correlated to the electrical field strength as described by FΓΌnerβs model and the
model to estimate ππ.
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Figure 3.10 ne simulation results for 500 W input power
Figure 3.11 ne simulation results for 400 W input power
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Figure 3.12 ne simulation results for 300 W input power
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Figure 3.13 Electron density variations on susceptor surface and along reactor axis
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Table 3.3 Comparison of the ne simulation results
10 torr 30 torr
Max Ave. Max Ave.
500 W 1.73e16 1π3 6.60e14 1
π3 1.71e16 1π3 6.47e14 1
π3
400 W 1.34e16 1π3 2.78e14 1
π3 1.33e16 1π3 2.78e14 1
π3
300 W
Figure 3.14 Te simulation results for 500 W input power
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Figure 3.15 Te simulation results for 400 W input power
Figure 3.16 Te simulation results for 300 W input power
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Figure 3.17 Electron temperature variations on susceptor surface and along reactor axis
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Table 3.4 Comparison of the Te simulation results
10 torr 30 torr
Max Ave. Max Ave.
500 W 2.279 eV 0.153 eV 1.684 eV 0.134 eV
400 W 2.029 eV 0.089 eV 1.477 eV 0.081 eV
300 W
3.4.3 Results of the Heat Transfer Simulation
Fig. 3.18 and Fig. 3.19 show the results of the heat transfer simulations exclude the 300
W cases with no plasma ignition. Temperature reached its highest value just above the
center of the susceptor because of the highest Te there generates the largest value of heat
source, and reduced in a radial manner because of the thermal diffusion. Table 3.5
includes maximum value on top surface of the susceptor and the average value of ππ
over the top surface of susceptor. Fig. 3.20 shows the extracts of the heavy species
temperature on the top surface of susceptor and along the axis of the reactor. ππ
increased when the input power increased, which was to be excepted because an increase
in the input power raised ππ and more energy was available to transfer from electron to
heavy species. ππ also increased when the pressure increased, which agreed with
exception as well, because an increase in pressure enhanced the collisions between
electrons and heavy particles, therefore, caused more energy transferred from electrons.
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Figure 3.18 Tg simulation results for 500 W input power
Figure 3.19 Tg simulation results for 400 W input power
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Figure 3.20 Heavy species temperature variations on susceptor surface and along reactor axis
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Table 3.5 Comparison of the Tg simulation results
10 torr 30 torr
Max Ave. Max Ave.
500 W 483.4 K 409.3 K 591.1 K 477.8 K
400 W 384.7 K 341.8 K 447.0 K 375.5 K
3.5 Validity Tests for Standing Wave and Sinusoidal Oscillation Field Assumptions
In order to move on to the next stage of this study, the drift-diffusion model of ππ was
expected to be coupled into the solver loop instead of the FΓΌnerβs model. Since the
second term of the local electron flux (the flux due to forced electron motion), described
in Sec. 3.1.3, was highly sensitive to the direction and magnitude of the electrical field in
the reactor, the validity of the assumptions on those two factors became very important.
The validity were tested by a PDE solver set to solve the drift-diffusion equation with the
solutions based on FΓΌnerβs model from a 500 W input power, 10 torr reactor pressure
case as initial conditions.
3.5.1 Validity Test for Standing Wave Assumption
The first step of this test was to solve the steady-state version of the drift-diffusion
equation with both terms of the local electron flux. Part a) of Fig. 3.21 shows the solution.
This solution did not have a concentration region of ππ which did not agree with either
the experimental observation or the qualitative expectation.
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Figure 3.21 Test result for standing wave, with both diffusion and mobility enabled
A further test was setup by shutting down the forced motion term in the equation, to find
out the causes of the lack of concentration. Part b) of Fig. 3.21 shows the solution. This
solution included a concentration of ππ in the proper region, which indicated that the
forced motion of electron mainly contributed to the lack of concentration; in other word,
the standing wave assumption was not valid for modeling the forced electron motion.
The next question was on the possibility to ignore the effects due to forced electron
motion in the drift-diffusion model. In order to examine the weight of importance of the
two terms in ΠοΏ½β , the magnitudes of the terms needed to be compared. Fig. 3.23 plots the
magnitudes of the diffusion term and forced electron motion term in the plasma region.
Through comparison, the forced electron motion term was about two orders of magnitude
larger than the diffusion, which indicated it was impossible to ignore the effects due to
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forced electron motion. All three steps of the validity test stated that the standing wave
assumption was not valid for the drift-diffusion model.
Figure 3.22 Comparison of the diffusion term and mobility term
3.5.2 Validity Test for Sinusoidal Oscillation Field Assumption
In this test, the electrical field solution from the simulation based on FΓΌnerβs model was
multiplied by a factor of sin(ππ‘) to resolve the sinusoidal oscillation of field inside the
reactor. Two steps of tests were setup by different time steps and target times. The first
one simulates ππ from 0 to 3 Γ 10β7π with a time step of 3 Γ 10β11π , and the second on
was from 0 to 3 Γ 10β5π with a time step of 3 Γ 10β9π ; tests with additional time steps
and longer target time are attempted to build but were limited by the disk space on the
work station. Fig. 3.24 shows the results from both of the tests. From comparison of these
results, it was shown that with a longer target time, the maximum value of ππ decreases
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from 2.47 Γ 1019 [ 1π3] to 3.33 Γ 1017 [ 1
π3] , approaching the experimental observation
value ~1016 [ 1π3]; and the concentration region was shrunken. These trends indicated that
the sinusoidal oscillation field assumption may be valid for the drift-diffusion model, but
a fully coupled model was necessary to compare with the experimental observation and
to confirm this guess.
Figure 3.23 Test result for sinusoidal oscillation field
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CHAPTER 4. CONCLUSIONS AND FUTURE WORK
4.1 Conclusions
A plasma model was built by coupling the EM simulation, heat transfer simulation and
the estimations of plasma properties based on FΓΌnerβs model with assuming standing
waves inside the MPCVD reactor. The multi-physics coupling was implemented through
COMSOL Multiphysics. This study was conducted to better understand the plasma
responses to different working conditions (input power and reactor pressure for the
current study); therefore, cases with different input powers and reactor pressures were
built and tested. The reliability of EM solver built in COMSOL and the validity of
standing wave assumption and sinusoidal oscillation field assumption were also tested
during this study.
The simulation results qualitatively agreed with the theoretical expectations and
experimental observations except for 300 W input power. Electrical field strength,
electron number density, electron temperature and the neutral gas temperature would
increase when the input power increased. Electrical field strength, electron number
density and electron temperature would decrease when the reactor pressure increased
while the neutral gas temperature would increase. The study results from the 300 W input
simulations showed there was no plasma ignited under the working condition which did
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not agree with the experimental observation. The lack of coincidence was probably
caused by the limit of FΓΌnerβs model for low powers.
The reliability of EM solver built in COMSOL was tested by comparing the simulation
results of COMSOL with an identical computational model simulated by ANSYS HFSS.
The differences in the maximum field strength on top surface of the susceptor were
23.08 % for a 3-D model and 5.38 % for a 2-D model, which confirmed the 2-D
simulation in COMSOL was a better choice.
The validity tests for assumptions were necessary in order to utilize the drift-diffusion
model of plasma properties. The two assumptions were tested through a drift-diffusion
PDE solver. The test results showed the standing wave assumption was not valid for the
drift-diffusion model while the sinusoidal oscillation field assumption could be valid but
still need to confirmed in the future works.
4.2 Future Work
The FΓΌnerβs model was shown to have limit under low input powers, and the parameters
used in the current study needed further adjustment by comparing the current prediction
with the experimental observations in the plasma region. The future simulation of plasma
able to cover the low input power region needs to include the drift-diffusion model of
plasma properties instead of FΓΌnerβs. The model is currently working with sinusoidal
oscillation field assumption. A time-dependent simulation of the multi-physics coupling
of plasma should be built with a long enough target time and small enough time step to
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obtain a self-consistent solution which should be compared with the experimental
observation to examine the validity of the sinusoidal oscillation field assumption.
Page 68
LIST OF REFERENCES
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LIST OF REFERENCES
[1] Shokrieh, M. M., and Rafiee, R., 2010. βA review of the mechanical properties of
isolated carbon nanotubes and carbon nanotube compositesβ. Mechanics of Composite
Materials, 46(2), pp. 155β172.
[2] Shokrieh, M. M., and Rafiee, R., 2010. βPrediction of Youngs modulus of graphene
sheets and carbon nanotubes using nanoscale continuum mechanics approachβ. Materials
and Design, 31(2), Feb., pp. 790β795.
[3] Che, J., Cagin, T., and Goddard III, W. A., 2000. βThermal conductivity of carbon
nanotubesβ. Nanotechnology, 11, pp. 65β69.
[4] Dresselhaus, M. S., and Eklund, P. C., 2000. βPhonons in carbon nanotubesβ.
Advances in Physics, 49(6), Sept., pp. 705β814.
[5] Lan, C., Amama, P. B., Fisher, T. S., and Reifenberger, R. G., 2007. βCorrelating
electrical resistance to growth conditions for multiwalled carbon nanotubesβ. Applied
Physics Letters, 91(9).
[6] Hone, J., Llaguno, M. C., Nemes, N. M., Johnson, A. T., Fischer, J. E.,Walters, D. A.,
Casavant, M. J., Schmidt, J., and Smalley, R. E., 2000. βElectrical and thermal transport
properties of magnetically aligned single wall carbon nanotube filmsβ. Applied Physics
Letters, 77(5), pp. 666β668.
Page 70
56
[7] Amama, P. B., Lan, C., Cola, B. a., Xu, X., Reifenberger, R. G., and Fisher, T. S.,
2008. βElectrical and thermal interface conductance of carbon nanotubes grown under
direct current bias voltageβ. The Journal of Physical Chemistry C, 112(49), Dec., pp.
19727β19733.
[8] Castro Neto, A. H., Peres, N. M. R., Novoselov, K. S., and Geim, A. K., 2009. βThe
electronic properties of grapheneβ. Reviews of Modern Physics, 81(1), Jan., pp. 109β162.
[9] Bianco, S., Giorcelli, M., Musso, S., Castellino, M., Agresti, F., Khandelwal, A., Lo
Russo, S., Kumar, M., Ando, Y., and Tagliaferro, a., 2010. βHydrogen adsorption in
several types of carbon nanotubesβ. Journal of Nanoscience and Nanotechnology, 10(6),
June, pp. 3860β3866.
[10] Liu, C., Fan, Y. Y., Liu, M., Cong, H. T., Cheng, H. M., and Dresselhaus, M. S.,
1999. βHydrogen storage in singlewalled carbon nanotubes at room temperatureβ.
Science, 286, Nov., pp. 1127β1129.
[11] Choi, W., Lahiri, I., Seelaboyina, R., and Kang, Y. S., 2010. βSynthesis of Graphene
and Its Applications: A Reviewβ. Critical Reviews in Solid State and Materials Sciences,
35(1), Feb., pp. 52β71.
[12] Claussen, J. C., Franklin, A. D., Ul Haque, A., Porterfield, D. M., and Fisher, T. S.,
2009. βElectrochemical biosensor of nanocube-augmented carbon nanotube networksβ.
ACS nano, 3(1), Jan., pp. 37β44.
[13] Claussen, J. C., Kim, S. S., Haque, A. U., Artiles, M. S., Porterfield, D. M., and
Fisher, T. S., 2010. βElectrochemical glucose biosensor of platinum nanospheres
connected by carbon nanotubesβ. Journal of Diabetes Science and Technology, 4(2), Mar.,
pp. 312β9.
Page 71
57
[14] Xiong, G., Hembram, K., Reifenberger, R., and Fisher, T. S., 2013. βMnO2-coated
graphitic petals for supercapacitor electrodesβ. Journal of Power Sources, 227, Apr., pp.
254β259.
[15] Chen, S., Brown, L., Levendorf, M., Cai, W., Ju, S.-Y., Edgeworth, J., Li, X.,
Magnuson, C. W., Velamakanni, A., Piner, R. D., Kang, J., Park, J., and Ruoff, R. S.,
2011. βOxidation resistance of graphene-coated Cu and Cu/Ni alloy.β. ACS nano, 5(2),
Feb., pp. 1321β7.
[16] Kousalya, A. S., Kumar, A., Paul, R., Zemlyanov, D., and Fisher, T. S., 2013.
βGraphene: An effective oxidation barrier coating for liquid and two-phase cooling
systemsβ. Corrosion Science, 69, Apr., pp. 5β10.
[17] Novoselov, K. S., Geim, a. K., Morozov, S. V., Jiang, D., Zhang, Y., Dubonos, S. V.,
Grigorieva, I. V., and Firsov, a. a., 2004. βElectric field effect in atomically thin carbon
films.β. Science (New York, N.Y.), 306, Oct., pp. 666β9.
[18] Iijima, S., 1991. βHelical microtubules of graphitic carbonβ. Letters to Nature,
354(6348), Nov., pp. 56β58.
[19] Journet, C., Maser, W. K., Bernier, P., and Loiseau, A., 1997. βLarge-scale
production of single-walled carbon nanotubes by the electric-arc techniqueβ. Letters to
Nature, 388(August), pp. 20β22.
[20] Guo, T., Nikolaev, P., Thess, A., Colbert, D. T., and Smalley, R. E., 1995. βCatalytic
growth of single-walled nanotubes by laser vaporizationβ. Chemical Physics Letters, 243,
pp. 49β54.
Page 72
58
[21] Ren, Z., Huang, Z., Xu, J., Wang, J., Bush, P., Siegal, M., and Provencio, P., 1998.
βSynthesis of large arrays of well-aligned carbon nanotubes on glassβ. Science (New
York, N.Y.), 282(5391), Nov., pp. 1105β7.
[22] Lee, J. K., Yong Eun, K., Baik, Y.-J., Jun Cheon, H., Weon Rhyu, J., Jung Shin, T.,
and Park, J. W., 2002. βThe large area deposition of diamond by the multi-cathode direct
current plasma assisted chemical vapor deposition (DC PACVD) methodβ. Diamond and
Related Materials, 11(3-6), Mar., pp. 463β466.
[23] Meyyappan, M., 2009. βA review of plasma enhanced chemical vapour deposition of
carbon nanotubesβ. Journal of Physics D: Applied Physics, 42(21), Nov., pp. 1β15.
[24] Tuesta, A. D., Bhuiyan, A., Lucht, R. P., and Fisher, T. S., 2014. βLaser Diagnostics
of Plasma in Synthesis of Graphene-based Materialsβ. Journal of Micro and Nano-
Manufacturing, 2(3), Jul., pp. 031002.
[25] Gorbachev, A. M., Koldanov, V. A., and Vikharev, A. L., 2001. βNumerical
modeling of a microwave plasma CVD reactorβ. Diamond and Related Materials, 10(3-7),
pp. 342β346.
[26] Microwaves101. (2012). Rectangular Waveguide Dimensions. Retrieved November
3, 2012, from http://www.microwaves101.com/encyclopedia/waveguidedimensions.cfm
[27] Yamada, H., Mokuno, Y., Chayahara, A., Horino, Y., and Shikata, S., 2007.
βPredominant physical quantity dominating macroscopic surface shape of diamond
synthesized by microwave plasma CVDβ. Diamond and Related Materials, 16(3), Mar,
pp. 576β580.
Page 73
59
[28] Yamada, H., Chayahara, A., Mokuno, Y., Horino, Y., and Shikata, S., 2006.
βNumerical analyses of a microwave plasma chemical vapor deposition reactor for thick
diamond synthesesβ. Diamond and Related Materials, 15(9), Sep, pp. 1389β1394.
[29] Pozar, D. M., Microwave Engineering, 4th edition, John Wiley & Sons, New Jersey,
2011.
[30] Yamada, H., Chayahara, A., and Mokuno, Y., 2007. βSimplified description of
microwave plasma discharge for chemical vapor deposition of diamondβ. Journal of
Applied Physics, 101(6), pp. 1β6.
[31] Lieberman, M. A. and Lichtenberg, A. J., Principles of Plasma Discharges and
Materials Processing, 2nd edition, John Wiley & Sons, New Jersey, 2005.
[32] FUNER, M., WILD, C., and KOIDL, P., 1995. βNumerical simulations of
microwave plasma reactors for diamond CVDβ. Surface & Coatings Technology, 74(1-3),
pp. 221β226.
[33] FUNER, M., WILD, C., and KOIDL, P., 1999. βSimulation and development of
optimized microwave plasma reactors for diamond depositionβ. Surface & Coatings
Technology, 119, Sep, pp. 853β862.
[34] Yamada, H., Chayahara, A., Mokuno, Y., Soda, Y., Horino, Y., and Fujimori, N.,
2006. βNumerical analysis of power absorption and gas pressure dependence of
microwave plasma using a tractable plasma descriptionβ. Diamond and Related Materials,
15(9), Sep, pp. 1395β1399.
[35] Raizer, Y. P., Gas Discharge Physics, Springer-Verlag, Berlin, 1991.
Page 74
60
[36] Lymberopoulos, D. P., 1995. βSpatiotemporal electron dynamics in radio-frequency
glow discharges: fluid versus dynamic Monte Carlo simulationsβ. Journal of Physics D:
Applied Physics, 28(4), pp. 727β737.
Page 76
61
VITA
Di Huang School of Aeronautics and Astronautics, Purdue University
Education B.S., AAE, 2012, Purdue University, West Lafayette, Indiana M.S., AAE, 2014, Purdue University, West Lafayette, Indiana
Research Interests Aerodynamics