Novel Negative Capacitance Appeared in all Frequencies in ...

REVIEW PAPER

Novel Negative Capacitance Appeared in all Frequenciesin Au/AlCu/SiO2/p-Si/Al Structure

A. Ashery1

Received: 17 January 2022 /Accepted: 24 March 2022# The Author(s) 2022

AbstractTo the best of our knowledge. The current work shows that negative capacitance exists at all frequencies, contrary to what isclaimed in the literature, which states that negative capacitance only exists at high or low frequencies. In this paper, Au/AlCu/SiO2/p-Si/Al structure was epitaxial grown by the liquid phase epitaxial growth technique. The structural characterization wasstudied using an X-ray diffraction pattern. The capacitance and conductance behavior was studied using I-V and C-V measure-ments at various temperatures, voltages, and frequencies. Negative capacitance appears at all frequencies ranging from low tohigh; moreover, capacitance has both positive and negative values at all frequencies, while the conductance has positive valuesonly in all frequencies. The current-voltage characterization was used to investigation the ideality factor, barrier height, and seriesresistance. The barrier height and Richard constant were estimated, through investigating the current conduction mechanism ofAu/AlCu/SiO2/p-Si/Al.

Keywords Negative capacitance . Conductance . Epitaxial growth . Schottky diode

1 Introduction

Aluminum copper AlCu alloys are deliberately advancedto have better properties than the Al and Cu alone. Alalloys with Cu increase stiffness, flexible modulus,strength, and regularity of grains by decreasing the hillockdensity; nevertheless, electrical, and thermal properties,are also decreased by the decrease of free electron con-centration. AlCu alloys with nanoscale make it promisingfor potential semiconductor industry requirements. Forexample, Al metallization attempts to maintain the filmsurface by forming a thin film of aluminum oxide; never-theless, Al mixed Cu is prone to electromigration failuresdue to grain boundary dispersion and a low bulk activa-tion energy [1], instead, Cu metallization does not have

the same self-protective influence as Al, and its primaryactivation energy, therefore, lowers electromigration fail-ures. The Decreased Cu concentration in Al enhances thereflectivity of the AlCu alloys in the visible range [2].Though, certain authors endorse keeping a sufficient Cucontent in grain boundaries to avoid depletion andelectromigration EM failures. [3, 4]. A small concentra-tion of Cu (0.5–5 wt.%) into Al, reduces harms in AlCuinterconnections through EM, growing its mean lifetime[5, 6]. Likewise, a small Al concentration (around 1%)into Cu decreases the oxidation degree several orders ofmagnitude provide a longer steadiness to the alloy, pro-viding a surface roughness afterward an annealing proce-dure [7]. Aluminum copper alloys are used as connectiv-ity in complementary metal-oxide-semiconductor CMOSdevices because they have good strength and heat resis-tance AlCu alloys, reduced surface roughness improvedoptical characteristics such as visible reflectance.Because of the different Cu concentrations and the lowtemperature utilized for diffusion. The resistivity andcrystalline phases of Al Cu films alloys are carefully stud-ied. In this study, we synthesized an aluminum-copper

* A. [email protected]

1 Department of Solid State Physics Research, Institute of PhysicsResearch, National Research Centre, 33 El-Bohouth St., Dokki,Giza 12622, Egypt

Siliconhttps://doi.org/10.1007/s12633-022-01850-0

alloy ALCu for use as a metal in a MOS structure, ac-cording to the literature, the negative capacitance has beenseen only at high or low frequencies, whereas this manu-script showed that negative capacitance can be seen in allfrequencies as revealed in Au/AlCu/SiO2/p-Si/Al struc-ture, which was manufacture using liquid phase epitaxialgrowth technology, and structural characterization wasdone using X-ray diffractometer, the negative capacitancehas seemed at all frequencies; similarly, capacitance haspositive and negative values at all frequencies which rep-resent the novelty of this paper while the conductance haspositive values only, The ideality factor, barrier height,and series resistance were calculated by the current-voltage characterization. Further investigation has beendone using the current conduction mechanism to estimatethe barrier height and Richard constant of Au/AlCu/SiO2/p-Si/Al structure.

2 Experimental Procedure

Aluminum, and copper metals, were purchased fromSigma Aldrich with purification of 99.99%. The AlCualloy is prepared by the liquid phase epitaxial technique.Utilizing a graphite multi-bin boat, which is located in aquartz tube, the charged ingredients were indium as asolvent for the solubility of Aluminum and copper, At atemperature of 1173 K for 30 min, we obtained a su-persaturated solution from AlCu. To prevent any con-taminations due to oxidation during epitaxial growth, we

used a continuous argon gas, a silicon substrate movedunder the supersaturated solution, after creating a thinfilm layer of silicon dioxide above the silicon wafer [8].After cooling rate, a thin film of AlCu was deposited ontop of SiO2 obtained AlCu/SiO2/p-Si structure. Thestructure was inspected by (XRD) using EmpyreanXRD Diffractometer. The dielectric properties weremeasured in the frequency range 10 Hz–20 MHz at adifferent temperature range from 233 to 363 K using aNovo control high-resolution alpha analyzer; the electricproperties were carried out using keysight modelB2901A. The XRD diffraction pattern of Au/AlCu/SiO2/p-Si/Al displays peaks for AlCu, SiO2, and siliconas shown in Plot 1.

3 Results and Discussion

3.1 The Dielectric Properties of Capacitance andConductance of Au/AlCu/SiO2/p-Si/Al

Plot 2a-a’, b-b’, c-c’, d-d’, e-e’, f-f’, g-g’, h-h’ showstemperatures dependence of capacitance and conductanceat different voltages and frequencies for Au/AlCu/SiO2/p-Si/Al. As shown in all Plots, for all frequencies, the ca-pacitance has both positive and negative values; however,for frequencies equal to f = 8.1 × 104 Hz and 30 Hz, thecapacitance values are only positive, but at a frequencyequal to f = 30 Hz, the capacitance takes only negative. Itis known that capacitance has negative values only at highor low frequencies, the best of our knowledge, this man-uscript has shown a negative capacitance at all frequen-cies [9–14]. The conductance behavior is roughly thesame in all frequencies, increasing with decreasing volt-ages and increasing temperature; its values in all frequen-cies were only positive, as shown in all Plots, indicatingthat the conductance is a robust function of temperature,voltages, and frequencies. The capacitance and conduc-tance values are determined by different variables, includ-ing the width and creation of the interfacial layer, thedensity of interface states, and series resistance [15].

Plot 3a-a’, b-b’, c-c’, d-d’, e-e’, f-f’, g-g’, h-h’ revealedvoltage dependence of capacitance and conductance atdifferent temperatures and frequencies for Au/AlCu/SiO2/p-Si/Al. As expected from all Figures. The capaci-tance has both positive and negative values in the entirefrequency range except at frequencies (f = 8.1 × 104 Hzand 30 Hz) where the capacitance has only positive andnegative values respectively. The capacitance behavior

0 20 40 60 80

0

100

200

300

61.2

AlC

u(22

3) 2

6-00

16

20.1

4SiO

2 (0

41) 8

9-18

1323

.91S

iO2

(231

) 89-

1813

31.4

2 A

lCu

(202

)88-

1713

69.1

Si 8

0-50

12

17.9

AlC

u (2

00) 8

8-17

13

48.9

AlC

u (2

13) 8

8-17

13

)u.a(ytisnetnI

Plot 1 XRD pattern of Au/AlCu/SiO2/p-Si/Al structure

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creates peaks with positive and negative values for allfrequencies except at frequency f = 8.1 × 104 Hz. Theconductance increases in the negative region of voltageand decreases in the positive region of voltage at frequen-cies (2 × 107, 9.1 × 106, 8.58 × 105) Hz, as shown in

Plots (a’,b’,c’), whereas at frequencies (8.1 × 104,7.63 ×103,1.2 × 103,114, and 30) Hz. As the temperature rises,the conductance generates reverse peaks, the peaks movetoward the positive voltage area, and the conductancerises. As seen in all Plots, conductance is a strong

300 320 340 360 380

-1.2x10-10

-6.0x10-11

0.0

6.0x10-11

1.2x10-10

C ( F )

T( K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 2x107 Hza

300 320 340 360 3800.0

1.0x10-3

2.0x10-3

3.0x10-3

G ( S )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 2x107 Hza'

300 320 340 360 380

0.00

1.50x10-9

3.00x10-9

4.50x10-9

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 9.1x10 6 Hz

b

300 320 340 360 380

6.50x10-4

1.30x10-3

1.95x10-3

2.60x10-3

G ( S )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 9.1x106 Hz

b'

300 320 340 360 380 400

-6.80x10-9

0.00

6.80x10-9

1.36x10-8

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 8.58x105 H z

c

300 320 340 360 380

1.0x10-3

2.0x10-3

3.0x10-3

4.0x10-3

5.0x10-3

G (S)

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

c' f = 8.58x105 H z

Plot 2 a-a’, b-b’, c-c’, capacitance and conductance vs T at different voltages and frequencies for Au/AlCu/SiO2/p-Si/Al

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function of frequency, voltage, and temperature [16–21].Effect of border states density can be removed once theC–V and G–V curves are measured at effective great

frequency [22–24], subsequently, the charges at the bor-der states cannot track an ac signal. In this circumstance,the Border States are instability with the semiconductor.

300 320 340 360 380

0

1x10-8

2x10-8

3x10-8

4x10-8

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 8.1x104 Hzd

300 320 340 360 380

3.0x10-4

6.0x10-4

9.0x10-4

1.2x10-3

1.5x10-3

G ( S )

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

d'

T (K)

f = 8.1x104 Hz

300 320 340 360 380

-2x10-7

-1x10-7

0

1x10-7

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 7.6x103 Hz

e

300 320 340 360 380

3.0x10-4

6.0x10-4

9.0x10-4

1.2x10-3

G ( S )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 7.6x103 Hze'

300 320 340 360 380

-3.30x10-6

0.00

3.30x10-6

6.60x10-6

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 1.22x103 Hzf

300 320 340 360 380

3.0x10-4

6.0x10-4

9.0x10-4

1.2x10-3

G ( S )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 1.22x103

f'

Fig. 2 d-d’, e-e’, f-f’, capacitance and conductance vs T at different voltages and frequencies for Au/AlCu/SiO2/p-Si/Al

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After the above discussion, the series resistance (Rs) ap-pears the greatest significant factor that origins the elec-trical characteristics of the several structures to be non-ideal [25].

Plot 4a, b, c, d, e, f, g, h, i exhibited voltage depen-dence capacitance and conductance at different frequen-cies and temperature of Au/AlCu/SiO2/p-Si/Al, As ex-hibited from all plots, the capacitance creates peaks withpositive and negative values at all frequencies as shownin Plot 4a, b at temperature 300 K, the capacitance de-creases with negative values, creating peaks in the nega-tive and positive voltage regions; the capacitance haspeaked with positive and negative values in the positivevoltage area. At high frequencies, its values were (− 1.5

× 10–9 to 1. × 10–9 F), at mid and low frequencies, itsvalues were (− 4 × 10–4 to 2 × 10 -4F), the conduc-tance raise in the negative region of voltage, a decreasein the positive region of voltage, its values (5 × 10 3 to33 × 104) as shown in Plot 3c. At temperatures 350,375 K. Capacitance and conductance have the behaviormentioned in temperature 300 K. such performance ofcapacitance and conductance shows the existence of con-tinuous delivery of the Border States, subsequent in aprogressive decline of reply of the interface state to ap-plied ac voltage [26–30].

Plot 5a-a’, b-b’, c-c’, d-d’, e-e’ exhibited frequencydependence of capacitance and conductance at differenttemperatures and voltages of Au/AlCu/SiO2/p-Si/Al. As

300 320 340 360 380

-8.10x10-4

0.00

8.10x10-4

1.62x10-3

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 114 Hz

g

300 320 340 360 380

3.0x10-4

6.0x10-4

9.0x10-4

1.2x10-3

G ( S )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 114 Hz

g'

300 320 340 360 380

-8.0x10-5

-6.0x10-5

-4.0x10-5

-2.0x10-5

C ( F )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 30 Hz

h300 320 340 360 380

3.0x10-4

6.0x10-4

9.0x10-4

1.2x10-3

G ( S )

T (K)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

f = 30 Hz

h'

Fig. 2 g-g’, h-h’, capacitance and conductance vs T at different voltages and frequencies for Au/AlCu/SiO2/p-Si/Al

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-6 -4 -2 0 2 4 6-1.46x10-10

-7.30x10-11

0.00

7.30x10-11

C ( F )

V ( V )

300k 325k 350k 375k

f = 2x107 Hza

-6 -4 -2 0 2 4 60.0

1.0x10-3

2.0x10-3

3.0x10-3

G ( S )

V ( V )

f = 2x107 Hz

a'

300k 325k 350k 375k

-6 -4 -2 0 2 4 6

0.00

1.50x10-9

3.00x10-9

4.50x10-9

C ( F )

V ( V )

300K 325K 350K 375K

f = 9.1x106 Hzb

-6 -4 -2 0 2 4 6

6.80x10-4

1.36x10-3

2.04x10-3

2.72x10-3

G ( S )

V ( V )

f = 9.1x106 Hz

b '

300K 325K 350K 375K

-6 -4 -2 0 2 4 6

-7.50x10-9

0.00

7.50x10-9

1.50x10-8

C ( F )

V ( V )

f = 8.5x106 Hzc 300K 325K 350K 375K

-6 -4 -2 0 2 4 6

1.20x10-3

2.40x10-3

3.60x10-3

4.80x10-3

G ( S )

V ( V )

f = 8.5x106 Hz

c'

300K 325K 350K 375K

-6 -4 -2 0 2 4 60

1x10-8

2x10-8

3x10-8

4x10-8

C ( F )

V ( V )

f = 8.1x104 Hz

d

300K 325K 350K 375K

-6 -4 -2 0 2 4 6

3.40x10-4

6.80x10-4

1.02x10-3

1.36x10-3

G ( S )

V ( V )

d'

f = 8.1x104 Hz 300K 325K 350K 375K

Plot 3 a-a’, b-b’, c-c’, d-d’, capacitance and conductance vs V at different temperatures and frequencies for Au/AlCu/SiO2/p-Si/Al

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-6 -4 -2 0 2 4 6

-2x10-7

-1x10-7

0

1x10-7

2x10-7

C ( F )

V ( V )

f = 7.6x103 Hz

e 300K 325K 350K 375K

-6 -4 -2 0 2 4 6

2.80x10-4

5.60x10-4

8.40x10-4

1.12x10-3

G ( S )

V ( V )

e' 300K 325K 350K 375K

f = 7.6x103 Hz

-6 -4 -2 0 2 4 6-7.00x10-6

-3.50x10-6

0.00

3.50x10-6

7.00x10-6

C ( F )

V ( V )

f = 1.2x103 Hz

f 300K 325K 350K 375K

-6 -4 -2 0 2 4 62.50x10-4

5.00x10-4

7.50x10-4

1.00x10-3

G ( S )

V ( V )

f = 1.2x103 Hz

f'

300K 325K 350K 375K

-6 -4 -2 0 2 4 6-8.10x10-4

0.00

8.10x10-4

1.62x10-3

C ( F )

V ( V )

f = 114 Hz

g

300K 325K 350K 375K

-6 -4 -2 0 2 4 6

2.80x10-4

5.60x10-4

8.40x10-4

1.12x10-3

G ( S )

V ( V )

f = 114 Hzg' 300K

325K 350K 375K

-6 -4 -2 0 2 4 6

-8.0x10-5

-6.0x10-5

-4.0x10-5

-2.0x10-5

C ( F )

V ( V )

f = 30 Hz

h 300K 325K 350K 375K

-6 -4 -2 0 2 4 6

2.80x10-4

5.60x10-4

8.40x10-4

1.12x10-3

G ( S )

V (V)

f = 30 Hz

h'

300K 325K 350K 375K

Fig. 3 e-e’, f-f’, g-g’, h-h’, capacitance and conductance vs V at different temperatures and frequencies for Au/AlCu/SiO2/p-Si/Al

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shown from all Plots, the capacitance at low frequencieshas both negative and positive values creating relaxationpeaks, independent of frequencies, their values with volt-

ages are as the following (− 5, −2, 0, 2, 5) V (− 4 × 10–4- 6 × 10–4, −2 × 10–4 - 1 × 10–4, − 17 × 10–5 - 5 ×10–5, −2 × 10–4 - 2 × 10–5, 4 × 10–4 - 5 × 10–4)

-6 -4 -2 0 2 4 6

-1.50E-009

-1.00E-009

-5.00E-010

0.00E+000

5.00E-010

1.00E-009

C ( F )

V ( V )

F = 20000000F = 15384600F = 11834300F = 9103320F = 7002560F = 5386580F = 4143520F = 3187330F = 2451790F = 1885990

T = 3 0 0 K

a

-6 -4 -2 0 2 4 6-0.0004

-0.0003

-0.0002

-0.0001

0.0000

0.0001

0.0002

C ( F )

V ( V )

F = 1581.5F = 1216.54F = 935.799F = 719.845F = 553.727F = 425.944F = 327.649F = 252.038F = 193.875F = 149.135

T = 3 0 0 Kb

-6 -4 -2 0 2 4 60.000

0.001

0.002

0.003

G ( S )

V ( V )

F = 20000000F = 9103320F = 3187330F = 1450760F = 660338F = 300564F = 105236F = 36845.9F = 12900.8F = 5872F = 2055.95F = 719.845F = 252.038F = 114.719F = 40.1664

T = 3 0 0 Kc

-6 -4 -2 0 2 4 6

-3.00E-009

-1.50E-009

0.00E+000

1.50E-009

3.00E-009

4.50E-009

C ( F )

V ( V )

F = 20000000F = 15384600F = 11834300F = 9103320F = 7002560F = 5386580F = 4143520F = 3187330F = 2451790F = 1885990F = 1450760F = 1115970

T = 3 5 0 Kd

-6 -4 -2 0 2 4 6-0.0020

-0.0015

-0.0010

-0.0005

0.0000

0.0005

0.0010

C ( F )

V ( V )

F = 4516.92F = 3474.56F = 2672.74F = 2055.95F = 1581.5F = 1216.54F = 935.799F = 719.845F = 553.727F = 425.944F = 327.649F = 252.038F = 193.875F = 149.135F = 114.719

T = 3 5 0 Ke

Plot 4 a, b, c, d, e, capacitance and conductance vs V at different frequencies and temperature of Au/AlCu/SiO2/p-Si/Al

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-6 -4 -2 0 2 4 6

0.001

0.002

0.003

0.004

G ( S )

V ( V )

F = 20000000F = 7002560F = 2451790F = 858440F = 300564F = 105236F = 47899.7F = 21802.3F = 7633.6F = 2672.74F = 719.845F = 327.649F = 149.135F = 67.8811

T = 3 5 0 Kf

-6 -4 -2 0 2 4 6-1.00E-008

0.00E+000

1.00E-008

2.00E-008

3.00E-008

4.00E-008

C ( F )

V ( V )

F = 20000000F = 15384600F = 11834300F = 9103320F = 7002560F = 5386580F = 4143520F = 3187330F = 2451790F = 1885990F = 1450760F = 1115970F = 858440F = 660338

T = 3 7 5 K

g

-6 -4 -2 0 2 4 6-0.0006

-0.0004

-0.0002

0.0000

0.0002

0.0004

0.0006

0.0008

C ( F )

V ( V )

F = 5872F = 4516.92F = 3474.56F = 2672.74F = 2055.95F = 1581.5F = 1216.54F = 935.799F = 719.845F = 553.727F = 425.944F = 327.649F = 252.038F = 193.875

T = 3 7 5 Kh

-6 -4 -2 0 2 4 6

0.001

0.002

0.003

0.004

0.005

C ( F )

V ( V )

F = 20000000F = 7002560F = 2451790F = 858440F = 300564F = 136806F = 36845.9F = 12900.8F = 4516.92F = 2055.95F = 935.799F = 425.944F = 193.875F = 67.8811F = 30.8972

T = 3 7 5 K

i

Fig. 4 f, g, h, i, capacitance and conductance vs V at different frequencies and temperature of Au/AlCu/SiO2/p-Si/Al

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respectively. The conductance raises with raising the tem-perature at both low and mid-frequencies, at high frequen-cies, the conductance shows more than peaks for all tem-peratures with the following values (2 × 10–3 - 55 × 10–4, 5 × 10–4 - 45 × 10–4,3 × 10–4 - 36 × 10–4, 2 × 10–

4 - 27 × 10–4, 5 × 10–4 - 2 × 10–3) at voltages (− 5,−2, 0, 2, 5) V respectively. Due to the influence of thehigh series resistance value of the device manufactured ofAu/AlCu/SiO2/p-Si/A, at high resistivity, the capacitance

2 4 6 8 10 12 14 16 18

-2.80x10-4

0.00

2.80x10-4

5.60x10-4

C ( F )

ln f (Hz)

V = -5 Va 300K 325K 350K 375K

2 4 6 8 10 12 14 16 18

1.50x10-3

3.00x10-3

4.50x10-3

6.00x10-3

G ( S )

ln f (Hz)

v=- 5 V a` 300K 325K 350K 375K

2 4 6 8 10 12 14 16 18

-1.76x10-4

-8.80x10-5

0.00

8.80x10-5

C ( F )

ln f (Hz)

V = - 2 Vb 300K

325K 350K 375K

2 4 6 8 10 12 14 16 18

1.0x10-3

2.0x10-3

3.0x10-3

4.0x10-3

C ( F )

ln f (Hz)

V = - 2 V b' 300K 325K 350K 375K

2 4 6 8 10 12 14 16 18-1.89x10-4

-1.26x10-4

-6.30x10-5

0.00

C ( F )

ln f (Hz)

V = 0 Vc

300K 325K 350K 375K

2 4 6 8 10 12 14 16 18

9.50x10-4

1.90x10-3

2.85x10-3

3.80x10-3

G ( S )

ln f (Hz)

V = 0 V

c'

300K 325K 350K 375K

Plot 5 a-a’, b-b’, c-c’, capacitance and conductance vs lnf at different temperatures and voltages of AU/AlCu/SiO2/p-Si/Al

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becomes constant across a wide frequency range as thefrequency increases [31, 32].

Plot 6a-a’, b-b’, c-c’, d-d’ shows the frequency depen-dence of capacitance and conductance at different voltagesand temperatures of AU/AlCu/SiO2/p-Si/Al. As illustratedfrom all Plots, the capacitance at low frequencies createsrelaxation peaks with negatives and positive values, at highand mid-frequencies, the capacitance approximately re-mains constant taking the following values of (− 2 × 10–3 - 3 × 10–4, −2.5 × 10–4 - 2 × 10–3, − 2 × 10–3 - 1 ×10–3, −45 × 10–5 - 75 × 10–5) at temperature (300, 325,350, 375 K) respectively. At low and mid-frequencies, theconductance remains unchanged; however, when voltagesare raised, the conductance shows more than peaks at allvoltages, and their values with temperature are as follows:

(300, 325, 350, 375) K (− 2 × 10–4 - 3 × 10–3, −2.5 × 10–3 - 32 × 10–4, − 4 × 10–3 - 5 × 10–3, −45 × 10–4 - 6 ×10–3) respectively.

3.2 Electric Characteristics of Au/AlCu/SiO2/p-Si/Al

It can be seen from Plot 7a, c, d, e, f, g that three differentregions, where existing obey the power-law (I α Vn). Indistrict, I, wherever the forward voltage is small, a mixedconduction mechanism between space charge limited cur-rent (SCLC) and ohmic existing as the slopes in allFigures their values (8.8, 8.77, 8.78, 8.39, and 8.88).(For SCLC; I α V 9) [33]. At voltages V > 0.1 V, theslopes rise to values (9.82, 9.63, 9.86, 11.9, 12.24) (dis-trict 2). In this area, the conduction mechanism can be

2 4 6 8 10 12 14 16 18

-1.8x10-4

-1.2x10-4

-6.0x10-5

0.0

C ( F )

ln f (Hz)

v = 2 V

d

300K 325K 350K 375K

2 4 6 8 10 12 14 16 18

6.0x10-4

1.2x10-3

1.8x10-3

2.4x10-3

G ( S )

ln f (Hz)

V = 2 V d' 300K 325K 350K 375K

2 4 6 8 10 12 14 16 18-4.0x10-4

-2.0x10-4

0.0

2.0x10-4

4.0x10-4

C ( F )

ln f (Hz)

V = 5 Ve 300K 325K 350K 375K

2 4 6 8 10 12 14 16 180.0

5.0x10-4

1.0x10-3

1.5x10-3

2.0x10-3

G ( S )

ln f (Hz)

V = 5 V e' 300K 325K 350K 375K

Fig. 5 d-d’, e-e’, capacitance and conductance vs lnf at different temperatures and voltages of AU/AlCu/SiO2/p-Si/Al

Silicon

ascribed to trap-filled SCLC as inserted carriers are abun-dant extra than thermally created carriers, and an increasein current is detected. In the third district, the slopes were(1.79, 1.82, 1.84, 1.98, and 1.53) and can be described asohmic conduction.

lnI0T2

� �¼ ln AA**� � −qφb0

kTð1Þ

Regarding Eq. (1) it is predictable that Ln (Io/T2)-1000/T relation provides a straight line, the slope of thisline, provides the value of barrier height at zero kelvin(Φb) and the y axis interrupt provides the Richardson

constant (A**). The relation of Ln (I0/T2) versus1000/T, is exposed in Plot 8. the barrier height (Φb) atzero bias and Richardson constant (A**) values are foundas 2.34 × 10–7 Acm-2 K -2 and (0.87) eV respectively.According to Wang Yue-Hu et al. [34], the A** of an Al/Ti/4H-SiC Shottky barrier diodes was found as 5.44 ×10–7 Acm-2 K-2. For instance, the value obtained for(A**) is also different from the conventional value(156 Acm-2 K-2) recognized for 6H-SiC, additionalstudies have also discovered such high dissimilar values[34, 35]. PLot 9 shows ln(Io/T2) – q2/2(KT)2 versus1000/T for Au/AlCu/SiO2/p-Si/Al structure, it can beseen that there is one lined region at a temperaturerange of 300–425 K, the Richardson constant and

2 4 6 8 10 12 14 16 18

-3.60x10-4

0.00

3.60x10-4

7.20x10-4

C ( F )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 375 K

a

2 4 6 8 10 12 14 16 180.00

1.60x10-3

3.20x10-3

4.80x10-3

6.40x10-3

G ( S )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 3 75 K a'

2 4 6 8 10 12 14 16 18

-1.76x10-3

-8.80x10-4

0.00

8.80x10-4

C ( F )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 350 Kb

2 4 6 8 10 12 14 16 180.00

1.40x10-3

2.80x10-3

4.20x10-3

G ( S )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 350 K b'

Plot 6 a-a’, b-b’, capacitance and conductance vs lnf at different voltages and temperatures of AU/AlCu/SiO2/p-Si/Al

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barrier height values are found as (0.776) eV and −1.13 × 10–2 Acm-2 K -2 respectively.

Plot 10 shows the relationship between ideality factor(n) and barrier height (Φb). The figure shows only onelinear region. Homogeneity of the barrier might be used tocreate this bordered area [34], the barrier height, in thelinear region (300–425 K) was found to be (0.770) eV.These findings show that the current conduction mecha-nism and the thermionic emission hypothesis are not well-matched [34, 36–43]. As seen in Plot 11. while the valueof n increases as the temperature decreases, the value ofΦb decreases. This change in Φb with temperature can beexplained by the fact that as temperature rises, the valueof Φb rises, and the values of n fall nearly exponentially.This behavior of Φb with temperature and large values ofn shows there is a deviation from the standard/pure TEtheory, especially at low temperatures. It is expected thatthe ideal value of n is unity or close to the unit at room

temperature based on pure or standard TE theory, and thevalues of Φb was raised with reducing the temperature,comparable to the semiconductor’s forbidden bandgap(Eg). Furthermore, the ideality factor varies linearly withthe inverse of temperature and may be expressed as.

n Tð Þ ¼ n0 þ T0

Tð2Þ

Wherever the no and To are constant and have the values0.19 and 1117.85 K as shown in Plot 12 respectively, Thetemperature depends on (n) proposes that the current conduc-tion mechanism is organized by the thermionic field emission(TFE) [44, 45]. This indicates that the surface states (Nss)have a stronger effect in this structure than the insulator’sspatial delivery. Plot 13 displays photoresponse with timefor Au/AlCu/SiO2/p-Si/Al structure.

4 8 12 16-2.80x10-3

-1.40x10-3

0.00

1.40x10-3

C ( F )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 325 Kc

2 4 6 8 10 12 14 16 18

0.0

1.0x10-3

2.0x10-3

3.0x10-3

G ( S )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 325 K c'

2 4 6 8 10 12 14 16 18

-1.89x10-3

-1.26x10-3

-6.30x10-4

0.00

C ( F )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 300 Kd

2 4 6 8 10 12 14 16 180.0

1.0x10-3

2.0x10-3

3.0x10-3

G ( S )

ln f (Hz)

V = -5 V = -4 V = -3 V = -2 V = -1 V = 0 V = 1 V = 2 V = 3 V = 4 V = 5

T = 300 Kd'

Fig. 6 c-c’, d-d’, capacitance and conductance vs lnf at different voltages and temperatures of AU/AlCu/SiO2/p-Si/Al

Silicon

-2 -1 0 1 2

-20

-16

-12

-8

ln I

(A )

V (V)

300K325K350K375K400K

a

0.0 0.5 1.0 1.5 2.0-20

-18

-16

-14

-12

-10

-8

ln I

(A)

V (V )

region Islop = 8.8

region IIslop = 9.82

region IIIslop = 1.79c

T = 3 0 0 K

0.0 0.5 1.0 1.5 2.0-20

-18

-16

-14

-12

-10

-8

l n I

( A )

V ( V )

region Islop = 8.77

region IIslop = 9.63

region IIIslop = 1.82

d

T = 3 2 5 K

0.0 0.5 1.0 1.5 2.0

-18

-16

-14

-12

-10

-8

-6

lnI (A

)

V (V)

region Islop = 8.78

region IIslop = 9.86

region IIIslop = 1.84e

T = 3 5 0 K

0.0 0.5 1.0 1.5 2.0

-18

-16

-14

-12

-10

-8

-6

lnI(A

)

V ( V )

region Islop = 8.39

region IIslop = 11.9

region IIIslop = 1.98f

T = 3 7 5 K

0.0 0.5 1.0 1.5 2.0

-18

-16

-14

-12

-10

-8

-6

lnI (A

)

V ( V )

region Islop 8.88

region IIslop = 12.24

region IIIslop 1.53

j

T = 4 0 0 K

Plot 7 a, b, c, d, e, f, j lnI vs V(V) of Au/AlCu/SiO2/p-Si/Al

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4 Conclusion

The current work confirmed that negative capacitance canbe found in all frequencies as seen Au/AlCu/SiO2/p-Si/Alstructure which was epitaxial grown by the liquid phaseepitaxial growth technique. The structural characterizationwas done using an X-ray diffraction pattern, and capaci-tance and conductance behavior were studied using I-Vand C-V measurements at different temperatures, volt-

2.4 2.8 3.2

-30.0

-29.6

-29.2

-28.8ln

(IO/T

2 )

1000/TPlot 8 ln(Io/T2) vs 1000/T of Au/AlCu/SiO2/p-Si/Al

2.4 2.8 3.2

40

60

80

ln(I O

/T2 ) -

q2 /2

(KT)

2

1000/TK-1

Plot 9 ln(Io/T2)-q2/2(KT)2 vs 1000/T of Au/AlCu/SiO2/p-Si/Al

2.6 2.8 3.0 3.2 3.4 3.60.75

0.80

0.85

0.90

0.95

1.00

n

y = a + b xintercept = 1.51slop = - 0.210R2 = 0.936

Plot 10 Φb vs n of Au/AlCu/SiO2/p-Si/Al

320 360 4000.75

0.80

0.85

0.90

0.95

1.00

T (K)

2.6

2.8

3.0

3.2

3.4

3.6

n

0.0024 0.0028 0.00322.4

2.8

3.2

3.6

n

1/T (K-1

Intercept = -0.19slop = 1117.85

TO = 1117.85no = - 0.19

a

b

Plot 11 a Φb, n vs T of Au/AlCu/SiO2/p-Si/Al b n vs 1/T of Au/AlCu/SiO2/p-Si/Al

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ages, and frequencies. Negative capacitance has seemed atall frequencies ranging from low to high; moreover, ca-pacitance has both positive and negative values at all fre-quencies while the conductance has positive values onlyin all frequencies. The current-voltage characterizationwas used to calculate the ideality factor, barrier height,and series resistance.

Acknowledgments I would like to express my special thanks toNationalResearch Centre.

Authors’ Contributions This article was written by only one author whodid it all.

Funding Open access funding provided by The Science, Technology &Innovation Funding Authority (STDF) in cooperation with The EgyptianKnowledge Bank (EKB).

Data Availability data availability statement (also sometimes called a‘data access statement’) tells the reader where the research data associatedwith a paper is available, and under what conditions the data can beaccessed. They also include links (where applicable) to the data set.

Declaration

Competing of Interest All authors must disclose any financial and per-sonal relationships with other people or organizations that could inappro-priately influence (bias) their work. Examples of potential conflicts ofinterest include employment, consultancies, stock ownership, honoraria,paid expert testimony, patent applications/registrations, and grants or oth-er funding. All authors, including those without competing interests todeclare, should create a declaration of competing interest statement(which, where relevant, may specify they have nothing to declare). Todo so, authors should use this tool and upload it to the submission systemat the Attach Files step.

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Consent for Publication I voluntarily agree to take part in this study. Iunderstand I will receive a copy of this consent form. I understand thatphotographs (audio/video recordings) may be taken during the study. Iconsent to the use ofmy photograph (audio/video) in presentations relatedto this study.

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0.0024 0.0028 0.00322.4

2.8

3.2

3.6

n

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