P B P B T T • • Nanometrology Nanometrology requirements requirements • • Overview Overview of of instrumentation instrumentation at PTB at PTB - - Optical Optical mask mask comparator comparator - - Electron Electron - - optical optical metrology metrology system system - - New 1D New 1D vacuum vacuum nm nm - - comparator comparator - - Angle Angle comparator comparator • • International International comparison comparison Nano3 Nano3 • • Future Future needs needs H. Bosse, PTB, Department 5.2 H. Bosse, PTB, Department 5.2 for for length length and angle and angle graduations graduations NIST, NIST, Gaithersburg Gaithersburg , , January January 27 27 - - 29, 2004 29, 2004
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NIST NNI Jan04 Bosse - WTEC: What's Ne · P BT •Nanometrology requirements •Overview of instrumentation at PTB-Optical mask comparator-Electron -optical metrology system-New 1D
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•• OverviewOverview of of instrumentationinstrumentation at PTBat PTB-- OpticalOptical maskmask comparatorcomparator-- ElectronElectron --opticaloptical metrologymetrology systemsystem-- New 1D New 1D vacuumvacuum nmnm --comparatorcomparator-- Angle Angle comparatorcomparator
•• International International comparisoncomparison Nano3Nano3
•• Future Future needsneeds
H. Bosse, PTB, Department 5.2 H. Bosse, PTB, Department 5.2 forfor lengthlength and angle and angle graduationsgraduations
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PrerequisitesPrerequisites::
-- DisplacmentDisplacment measurementsmeasurements directlydirectly traceabletraceable to to thethe SI SI metermeter definitiondefinition
-- Position Position controlcontrol systemssystems forfor compansationcompansation of residual of residual guidingguiding deviationsdeviations
-- ApplicationApplication of of errorerror separationseparation methodsmethods to to determinedetermine residual residual deviationsdeviations
-- High High precisionprecision material material parameterparameter characterizationcharacterization: :
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Current LMS 2020 performance for 2D coordinate metrology:- Repeatability in one orientation: 4 nm (3s)- Agreement of grid coordinates with mask measured in
-- Improvement of probe sample interaction modelling, refinement oImprovement of probe sample interaction modelling, refinement o f models byf models bymeasurements with improved reproducibility on bette r defined rmeasurements with improved reproducibility on bette r defined r eferenceeferencesamples with better known material parameterssamples with better known material parameters
-- Closer cooperation with highCloser cooperation with high --end manufacturing sites to jointly develop betterend manufacturing sites to jointly develop betterstandards which then can be calibrated with smaller uncertaintstandards which then can be calibrated with smaller uncertaint iesies
-- Improvement of cross calibration procedures between different mImprovement of cross calibration procedures between different m etrologyetrologyinstrumentationinstrumentation
-- Further evaluate the potential of (microFurther evaluate the potential of (micro --) ) scatterometryscatterometry methods for inmethods for in --linelineproduction monitoring, comparison with other high r esolution mproduction monitoring, comparison with other high r esolution m icroscopyicroscopy
-- Improvements of high quality graduations (profile l ine shape, sImprovements of high quality graduations (profile l ine shape, s maller pitches)maller pitches)
-- Improvement of AFM measurement speedImprovement of AFM measurement speed
-- MeasurandsMeasurands to take into account 3D shape of isolated or groupe d structuresto take into account 3D shape of isolated or groupe d structures
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Mid and longMid and long--term needs:term needs:
-- Combination of different probing systems in one ins trument to iCombination of different probing systems in one ins trument to i mprovemprovedirect comparability of measurement resultsdirect comparability of measurement results
-- Combination of stable selfCombination of stable self --assembled structures (locally perfect) withassembled structures (locally perfect) with
globally defined high quality graduationsglobally defined high quality graduations
-- Increase potential of XIncrease potential of X --ray ray interferometryinterferometry for dimensional metrology (speed!)for dimensional metrology (speed!)
-- Increase potential of redundant measurement techniq ues in high Increase potential of redundant measurement techniq ues in high precisionprecisiondimensional dimensional nanometrologynanometrology (like e.g. (like e.g. trilaterationtrilateration , error separation), error separation)
-- Search for and investigate Search for and investigate newnew measurement principles and approaches measurement principles and approaches