New era for Materials Technology in Korea PRICM-8 Waikoloa, Hawaii August 5, 2013 Dr. Dongwha Kum Acting Vice President, NAEK Endowed Chair Researcher,

New era for Materials Technology in Korea

PRICM-8

Waikoloa, Hawaii

August 5, 2013

Dr. Dongwha Kum

Acting Vice President, NAEK

Endowed Chair Researcher, KIST

QUIET & CONTINUOUS improvement in PROPERTIES & COST of conventional materials

Revolution in Materials Technology

PRICM-3(1998)

cost down of ~2,5% per year

3.5~7% productivity increase per year

significant improvement in performance (e.g.

Si 10,000X)

~ 50% decrease in employment

dramatic improvement in working environment

Prof. Thomas Eagar

~ 2.5% new businesses per year in advanced materials

Contents

Introduction

Matured New Materials

Challenge Forwards

Summary & Conclusion

11

22

33

44

Korea at a glance

Land ( ) 99,600

(109th)

Population (million) 49,410

(25th)

GDP (US$, trillion) 1.014 (12th)

GDP per person (US$) 20,759 (29th)

Trade volume (US$, trillion) 1.036 (9th)

KOSPI Total(US$, trillion) 1.010(2012)

Economic Profile(2011)

Scientific papers per1M population during 1990~2001

Korea at glance

R/D Budget(B USD) 450.2(6th) R/D Personnel(FTE) 288.901(6th)

- Public : Private(%) 26.3 : 73.7 Scientific Papers, SCI 44,718(11th)

R/D Budget/GDP 4.03%(2nd) US Patents 12,126(4th)

Science & Technology(2012)

1. Crude Oil

Top 10 Imports (2012)

2. Semiconductors

3. Natural Gas

4. Petrochemical Products

5. Coal

10. Fine Chemicals

6. Steel Plates

9. Fabrication Equipment

8. Computers

7. Iron Ore

Imports$519.6B

Ref: Korea Customs Service

1. Oil & Petrochemical Products

Top 10 Exports (2012)

2.Semiconductors

3. Automobiles

4. Ships & Marine Structures

5. Flat Panel Display & Sensors

6. Automobile Parts

7. Wireless telecommunication

equipment

10. Electronic Goods& Devices

9. Plastics

8. Iron & Steel Products

Exports$547.9B

Ref: Korea Customs Service

Major Industry (2010)

32.4%35%49.3%59%

SamsungHynix

Memory Chip 1st Ship Building 1st 선

30.2%47%

TFT-LCD 1st

Mobile Phone 1st

25.3%30% 3.9%4.2%

Steel 5th Automobile 5th

5.5%5.5%30.2%5.5%

Petrochemicals 5th–

Hyundai STX

SamsungLG

POSCOHyundai

HyundaiKIA, GM Daewoo

SamsungLG, KT

GS CaltexLC

Materials Technology of Korea

Production : 200B USD(18.5% of manufactur-

ing)

Employee : 350,779(13.3% of manufacturing)

Exports : 91.6B USD

Imports : 71.4B USD

* mostly high-tech materials

Materials Industry Profile(2011)

Ref:: kims.re.kr

Materials Technology of Korea

R/D Activity(2011)

R/D Budget(M USD)*

510

Public : Private(%) 40 : 60

R/D Personnel(FTE) 19,259

Scientific Papers, SCI 4,358(4th)

US Patents 259(4th)* 8.7% of total manufacturing

Ref: kims.re.kr

Ethylene Production(2012) : 8.4MT 4th largest in the world 4th largest industry in Korea

Polymer Industry in Korea

Ref: KPA

Foreign Dependence : LCD Story

Cross cut view of LCD

Key Materials for LCD Foreign Dependence Supplyer

Liquid Crystal 100% Meck, Chissco

Alignment Layer Film 100% Nissan, JSP, Chissco

Polarizer Film 100% Nitto Denko

Color Filter 77% JSR, Tokyo Ink, Sumitomo

Photoresist 73% AZEM, TOK. Zeon

Black Matrix 74% TOK, MCSC

Photo Spacer 71% JSR

Over Coat 62% JSR, Chissco

Foreign Dependence : LCD Story

solar cells 82% , secondary Li battery 53%

Key materials from foreign suppliers occupy 55% production cost of LCD in Korea.

Ref: Displaybank

Ou

tpu

t

Time

Market

Market Pull

Laboratory

Technology Push

Valley of Death

Challenge for New Materials

Government effort to improve MCT

20012001 2002 ~ 20112002 ~ 2011 2012 ~ 20202012 ~ 2020

Strengthen ecosystem of materials industry

Basic plan for MCT

Special Act for MCT Promotion

MCT 2010

1.3B USD Proactive R/D Reliability Centers

MCT 2020

Extend the MCT2010

Multi- disciplinary R/D All Value chain

Improved trade balance

Samsung (May, 13, 2013)

Samsung Future Technology Foundation - Selected Materials technology aimed for new industry - Support material design to pilot demonstration

Hyundai Motors (April 29, 2913)

Advanced Materials Initiative for automobile parts and applications

LG Electronics (July 10, 2013)

Vehicle Components R/D Center(Incheon) for green automobile parts and devices

News 1

“R/D personnel increases fast at major companies”Chosun.com , July 3, 2013.

News 2

Ref: Chosun Daily

Contents

Introduction

Matured New Materials

Challenge Forwards

Summary & Conclusion

11

22

33

44

Issues in Materials Community

Conventional Materials - continuous innovation in manufacturing processes

- challenge to new materials and technologies

Matured New Materials - high demand for improved and advanced materials

- cooperative efforts to overcome death valley

Nano-Materials - strong emphasis on potential applications

- cultivate new business with collective efforts

Emerging New Materials - more proactive in emerging fields

Prod.(M tpy)

30

20

10

1980 1990 20001970 2010

’73 1st Phase Constr. at Pohang Completed(1.03M tpy)’68

Est.

’83 Pohang SteelworksConst. Completed (9.1M tpy)

’92 Gwangyang Steelworks Const. Completed (20.8 M tpy)

’94 Listed on the NYSE(1st Korean Company)

’00 Privatization

37 M tpy (6th)

The most competitive steel company

Steel Success StrategyJune, 2013, NY

Steels : POSCO

Ref: wsd.com

New Process : POIST

POSCO-Saarstatl-BOP

Compact Endless Casting – Rolling Mill

FINEX Process

Low-grade raw materialsEco-friendly processLow construction cost

Athermal converter

Seamless process

Ref: OJ Kwon, POSCO

TWIP steel for AutomobileBumper Beam, HydroformingFIAT New Panda(201)

New Plate Steels: Fe-Mn Alloy

« ferriteaustenite

• non-magnetic• twin defects• strong & low-T toughness• Good absorption of vibration

Fe-3~27%Mn Alloys

Ref: OJ Kwon, POSCO

Portable Devices Electric Vehicle

Capacity < 10 Wh 40 kWh

Energy density 150 Wh/kg 300 Wh/kg

Power density 150 W/kg 600 W/kg

Cycle life 500 5,000

Safety -10 to 60 °C Up to 200 °C

Cost $1000/kWh $300/kWh

Cell Chemistry (+)LiCoO2 / C(-) (+)LiNixCoyMnzO2 / C(-)

(+) Cathode LiCoO2 ↔ Li1-xCoO2 + xLi + xe-

(−) Anode Cn + xLi + xe- ↔ CnLix

LiCoO2 + Cn ↔ Li1-xCoO2 + CnLix

Battery Needs for EV

Ceramic Layer

Ceramic Layer

PO Separa-tor

Secondary Li Battery : LG Chem

PO Separator Polymer membrane Solvent : EC/DMC/EMC Electrolyte : Li4PF6

Ceramic layers prevent shrinkageless than 10%

LiMn2O4

Ref: LG Chem

Scale down of Semiconductor Memory

50nm50nm

40nm

30nm

20nm

10nm

2008 2009 2010 2011 2012 2013 2014

DRAM

NAND

source: SK Hynix

Tech

no

log

y n

od

e

DRAM Cell Capacitor

Technology node

oxide

70nm 50nm60nm 30nm40nm 20nm

100

80

40

60

20

Toxide

9Å8Å

7Å

5Å

11Å

Asp

ect ratio o

f storag

e no

de

Ref: SJ Hong, SK Hynix

Dielectric Materials for DRAM

Ref: DS Kil, SK Hynix

Future of Semiconductor Memory

?50nm50nm

40nm

30nm

20nm

10nm

2008 2009 2010 2011 2012 2013 2014

DRAM

NAND Cell design : 4F2, : 2F2, 3D

New materials/processes: high k, pattern

Efficiency & stacking: multi-bit, 3DIC TSV

NVM: PRAM, FeRAM, STT-RAM

Ref: SK Hynix

Tech

no

log

y n

od

e

16Gb Memory: eight 2Gb NAND flashes w/ TSV connection

High Density High Speed Less Power Less Noise Lower Profile Smaller Form Factor

Packaging : 3D IC TSV

3D DRAM dies w/ TSV connection

Ref: i-micronews.com

TSV: Trough Silicon Via

Progress of LED Materials

White LED150lm/W

Rhombohedral : Rc a = 4.757A

c = 12.983A M.P. = 2,050oC

TEC a =7.5x10-6K -1

c = 8.5x10-6K -1

Basal slip : (0001)<110>Prism slip: (110)<100>Pyramidal slip: (101)<101>

Etch pit density according to growing direction Other defects: bubbles, GB. lineages

a-axis c-axis

Sapphire(α-Al2O3)

Ref: Sapphire Technology

VHGF : Vertical Horizontal Gradient Freezing

growing cycle total charge production electricity

-37% -28% -42%

+43%

VHGF Growth of Sapphire

a-axis

c-axis

Ref: Sapphire Technology

Growth axis

Growth Method

EPD FWHM Manufacturer

A-axis

VHGF ≤3x102/cm2 < 9arcsec Sapphire Technology

Kyropoulos ≤10x102/cm2 ~ 12arcsec Rubicon, Monocrystal

EFG ≤105~6/cm2 > 20arcsec Namiki

C-axis Czochralski ≤103~4/cm2 > 12arcsec Kyocera

Quality of VHGF Sapphire

XRD (0006) rocking curve of 6” sapphire crystal

CL(MonoCL4+) Imageof (002)GaN on sapphire

σ = 1.97 ±0.28 x 10+8/cm2

FWHM = 214.4 ± 5.9 arcsec

Ref: Sapphire Technology

ETL

Substrate(Glass, plastics, metal foil)

ITO

HIL

HTL

Cathode

EML

EIL－

+

Exciton

low work function metals; Li, Ca, Mg - mixed layer structure - insulator/metal design

Metal-organic complex; Alq3, Gaq3

Amine type materials w/ high hole mobility

Amine type materials; CuPc - good contact w/ anode - smoothing effect on ITO

Flexible display; Polyimide - colorless, low TEC, low-k, high modulus

Emitting materials

DPVBi Alq3

NO

NON

O Al

NO

NC CN

Ir(ppy)3 DCJTB

Ir

N

N

N

AMOLED : Materials Issues

Introduction

Matured New Materials

Challenge Forwards

Summary & Conclusion

11

22

33

44

Activity Summary

Overcome the valley of death and accelerate market evo-

lution of new materials.

Maturing advanced materials through integrated efforts

among all actors in the value chain.

Increase basic research to continue accumulation of

knowledge stock with competent IP policy.

Active use of IT-based research tools (i.e., computational

materials, materials informatics)

Biomaterials for Orthopedic Applications: Mg

Mg-Ca-X

Mg-Ca

Mg

Ti

Immersion time [hr]0 10 20 30 40 50 60

H2

evol

utio

n [m

l/cm

2 ]

0.00

0.50

1.00

1.50

2.00

5% Ca

10% Ca

Pure

Mg-Ca (2.5hrs.)

Mg-Ca-X(298hrs.)

Mg-Mg2Ca Eutectic

CT Imageafter 6months

Ref: HK Seok, KIST

Den

sity

NAND Flash

NOR Flash

FeRAM

Process Speed

MRAM

DRAM

STTMRAM

PRAM

SRAM

Non Volatile Memory

Die

lect

ric

Die

lect

ricTime

Opt

ical

Pul

se Sub

stra

te

refl

ecct

ive

Electrical Memory (PRAM)

2

Electrode

Chalcogenide

conductive

Dielectric

conductive

Time

Ele

ctric

al P

ulse

Tm

Tc

Time

Tem

per

atu

re

Write(Reset) Erase(Set)

Read(Sense) “0” “1”

Optical Memory

PRAM

Ref: BK Chung, KIST

10

20

30

40

50

020100 30 40 50

Sb2Te3

GeTe

Ge2Sb2T

e5 ; ~50ns

Ge1Sb2T

e4 ; ~40ns

Ge1Sb4T

e7

; ~30ns

200ns30ns

100ns

50ns

70ns

Ge

Te Sb

Ge (at%)

Sb (at%)

60

70

80

90

60 70 80 90

Ge-doped SbTe

Commercial PCM: Ge2Sb2Te5

Ge-Sb-Te phase diagram

BEC

PCM

TE

7.5nm

17nm

BEC

PCM

TE

BEC

PCM

TE

7.5nm

17nm

Dash-type cell for high performance PRAM (SEC, 2010 VLSI)

DRAM-like performances with high scalability

Prototype PRAM

Prototype PRAM

Ref: BK Chung, KIST

MRAM

STT-MRAM

Select Half-select

Transistor OFFTransistor OFF

Transistor OFFTransistor OFF

Transistor

ON

Transistor

ON

Transistor

ON

Transistor

ON

Perfect selectivity

Data: Spin Up vs. Down

STT-RAM

-100 0 100500

1000

1500

Re

sist

an

ce (

)

Magnetic field (Oe)

‘0’

‘1’

-1.0 -0.5 0.0 0.5 1.0500

1000

1500

Res

ista

nce

()

Voltage (V)

‘1’

‘0’

Ref: JY Chang, KIST

n

Vbias

pInSb

A

In In

high (“1”) current ≡ avalanche state

low(“0”) current

Two current states: High & Low

curr

ent

(mA

)

Vbias

100

50

11.1311.0

B B

B B

R1

R2

Magnetic Controlled Logic Device

Ref: JY Chang, KIST

2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012

Nanotechnology Development Promotion Act

Korea Nanotechnology Initiative II

Nanotechnology Research Association

Nanotechnology Information Support System

Korea Nanotechnology Research Society

National NanoFab Center

Korea Advanced NanoFab Center

Nanotechnology Roadmap

National Nanotechnology Policy Center

Nano-Convergence2020 Program

Korea Nanotechnology Initiative I

Korea Nanotechnology Initiative III

Nanocluster Centers

Nanotechnology in Korea

Ref: Korea Nanotechnology Annual 2012

Dominant

Niche

Ivory Tower

Minor League

U.S.

Japan

Germany

Korea

Taiwan

Israel

Sweden

Singapore

Switzerland

Australia

Russia

France

ChinaU.K.

Netherlands

Italy

India

Brazil

2007 2008 2009

Technology Development Strength

Nan

ote

ch A

ctiv

ity

1 3 51

3

5

Canada

Ref: Lux Research (2010)

World Picture of Nanotechnology

2

4

2 4

Nano Convergence 2020 Program

Heat spreaders for high power LED lamps

Air purification for indoor applications

Ceramic inks for printed porcelains

High-yield light extraction, OLED

Thermal insulation & smart films

Sensor kits for illegal light oil

source: JK Park, Nano Convergence Foundation

Metals CNT (C) Graphene (G)

Physics Mechanics Quantum Mechanics Quantum Mechanics

Electrical Resistivity (Ω cm) 1.6 x10 -6(Au) 1.6 x10-6 1.0 x10-6 (Au)

Mobility (Cm2/Vs) ~ 10,000 8,000(CVD)

Thermal Conductivity (W/mK)

380(Cu) 3,00 ~ 3,500 5,300

Heat Conductivity (W/m-K) 11~12 3500 5300

Surface Area (m2/g) ~ ~1,500 ~2,630

Young’s Modulus (GPa) 220(Steel) 1,000 ~ 2,000 ~1,000

Tensile Strength (GPa) <2(Steel) 30 ~ 180 ~130

Failure Strain (%) ~ > 11 > 18

Price ($/m2)50 (ITO)

≈ 70N/A

Graphene

Physical Characteristics of Graphene

cost competitive to CNT

easy dispersion as additives in composites

layered structure with high-barrier characteristics

thickness : 0.34 ~ 10 nm length/width : 0.3 ~ 100 micron

Industrial strength graphene sheets : - pilot plant for large area (Samsung Techwin, 2012) graphene nanoplatelets : - 300ton/year (SSCP, 2013) - 1kg/day (Enbarotech, 2013) - 200ton/year (POSCO/HWC w/ XG Science, 2014)

Application

Basic

Graphene in Korea

Academic strength Scientific papers US patents

Ref: Korea Nanotechnology Annual 2011

SC backsheetBarriers againstwater, oxidationHeat & vac. shield

EMI PaintPrinting Ink

Home appliancesAutomobileBuilding

FlexibleTouch panel

Flexible &TransparentElectrode

EMI Shield

HighBarrier

Materials

OLED

Touch Panel

Coating

GrapheneSheets

+Nano

platelets

Main Thrust Area

Graphene Initiative(2013)

source: SH Hong, MKE

Computational Materials Science

Combinatorial Experiment

In-situ Multiple Analysis

Materials Informatics

Creative

Materials

Discovery

Energy Materials Designed by Quantum Alchemy

Structural and Environmental Materials of Extreme Properties

IT Materials to Overcome the Scaling Limit

Materials for Augmented Sensing

Creative Materials Discovery Program

Source : MEST(on discussion)

Summary & Conclusion

Materials technology has made remarkable progress through continuous evolution in Korea.

Innovation in materials and processing technology makes the bread-earning industries competitive.

Translational R/D to bridge the valley of death is strongly emphasized.

Group efforts covering all value chains is strongly asked in Government R/D of key materials and components.

Coordination of inter- & multi-disciplinary corperation becomes more important in newly converging fields (IT+NT+BT).

Suggestion

PRICM Innovation Forum - on specific public issues - produce tangible outcomes - possibly young scientist program