Nanowire solar cells Novel optoelectron ic devices - GaAs esearch Highlights 2001-2010 – N. Pelekanos Nitrides: Towards improved optoelectronic devices Piezoelectri c quantum dots: InAs (GaN) Funding: EC, ΓΓΕΤ, ΥΠΕΠΘ,..., 2,9 million Euros FORTH Microelectronics Research Group Univ. of Crete 1: Brown Univ. (USA) cs: CEA/Grenoble, CNET Lannion, Max-Planck Stuttgart 01: CEA/Grenoble 10: FORTH & Univ. of Crete
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Nanowire solar cells Novel optoelectronic devices - GaAs Research Highlights 2001-2010 – N. Pelekanos Nitrides: Towards improved optoelectronic devices.
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Nanowire solar cells
Novel optoelectronic
devices - GaAs
Research Highlights 2001-2010 – N. Pelekanos
Nitrides:Towards improved
optoelectronic devices
Piezoelectric quantum dots:
InAs (GaN)
Funding: EC, ΓΓΕΤ, ΥΠΕΠΘ,..., 2,9 million Euros
FORTH Microelectronics Research Group Univ. of Crete
IST Tune-laser APL 2002, APL 200320nm tuning at low T, 5nm tuning at 300K
190
200
210
220
230
240
250
260
1.3601.3551.3501.3451.3401.3351.330
-S. Tsintzos, Nature 2008
-RT operation, S. Tsintzos, APL 2009.
T=235K
VV
Piezoelectric quantum dots: Highlights
+ + + + +
- - - - - - - - - - - - -
+
+
+
+++
e
h
InAs (211)B QDs
G. Dialynas, JAP 2010
G. Dialynas, to be submitted
Reference QW InAs QDs
1.2812 1.2813 1.2814 1.2815 1.2816Energy (eV)
T=8KV H
XInte
nsity
(a.u
.)
1.2844 1.2845 1.2846 1.2847 1.2848 1.2849
Energy (eV)
T=8K
XX
VH
Very small FSS. Promising for sources of entangled photons
Single photon emission; possibility for high-T operationAnti-binding biexciton energy
1.272 1.273 1.274 1.275 1.276 1.277
T=8K
XX
X
Inte
nsity (a.u
)
Energy (eV)
Single dot spectroscopy
Piezoelectric quantum dots: Highlights
S. Germanis, APL 2011
Project: III-V Nanowires for high efficiency Solar cells
Solar Innovation 2010 Awardby
Commissariat a l’ Energie Atomique
Why Nanowires for Solar Cells?
Potential for lower cost and high efficiency:
- enhanced light absorption, less material utilization- no need for lattice matching, easier choice of substrate & more freedom in heterostructure design- direct path for charge transport