Nanowire and Superlattice Mid- Infrared Emitters on Si Prof. John Prineas Departments of Physics and Astronomy, and Electrical and Computer Engineering Iowa CREATES University of Iowa IEEE Summer Topicals, Ft. Lauderdale, FL July 9, 2019 1 Students: Xinxin Li Kailing Zhang Aaron Muhowski Collaborator: Prof. Fatima Toor Sponsor acknowledgements: • NSF for nanowire research under EPMD-1608714 • Air Force Research Labs Munitions Directorate under contract FA8651-16-P-0241 for superlattices on Si research
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Nanowire and Superlattice Mid- Infrared Emitters on Si...Superlattice c-band Superlattice v-band InAs GaSb E z STM cross section of InAs/GaSb1 1Steinshnider etal, Phys Rev Lett 85,
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Nanowire and Superlattice Mid-
Infrared Emitters on Si
Prof. John Prineas
Departments of Physics and Astronomy, and Electrical
and Computer Engineering
Iowa CREATES
University of Iowa
IEEE Summer Topicals, Ft. Lauderdale, FL
July 9, 2019
1
Students:
Xinxin LiKailing ZhangAaron Muhowski
Collaborator:
Prof. Fatima ToorSponsor acknowledgements: • NSF for nanowire research under EPMD-1608714• Air Force Research Labs Munitions Directorate under contract FA8651-16-P-0241
for superlattices on Si research
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1.0
Absorp
tion
Wavelength (m)
Some motivations for mid-infrared LED development . . .
Low cost gas sensing
Chemical sensing in aqueous
Thermal scene generation
Glucose
Acknowledgement of partners Chip Design Systems and Teledyne Scientific
Surface and interior recombination rates were separated and compared
• Surface recombination velocities comparable
to planar InAs / air
• The surface and interior recombination rates
equal for d = 70.1 nm, 17.1 nm at 77 K, 293 K,
respectively
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InAs/InAlAs core shell nanowires – key findings
• Selective area grown, wurzite NWs show 10x lower Auger scattering rates than comparable planar zincblende materials, and high EQE at low temperatures, suggesting potential as a low cost, mid-infrared emitter
• Self-nucleated NWs show thick “buffer layers” not needed to avoid material degradation for growth on Si
• Self-nucleated NWs show interior recombination rate rather than surface recombination limits NW carrier lifetime for most diameters at room temperature, contrary to expectation