Nano

SATHYABAMA UNIVERSITY(Established under section 3 of UGC Act, 1956)

Jeppiaar Nagar, Rajiv Gandhi Salai, Chennai - 119.

SYLLABUS

MASTER OF TECHNOLOGY PROGRAMMEIN

NANOTECHNOLOGY

(4 SEMESTERS)

REGULATIONS 2010

SATHYABAMA UNIVERSITYREGULATIONS – 2010

Effective from the academic year 2010-2011 and applicable to the students admitted to the Master of Engineering/ Technology / Architecture /Science (Four Semesters)

1. Structure of Programme

1.1 Every Programme will have a curriculum with syllabi consisting of theory and practical such as:

(i) General core courses like Mathematics

(ii) Core course of Engineering / Technology/Architecture / Science

(iii) Elective course for specialization in related fields

(iv) Workshop practice, Computer Practice, laboratory Work, Industrial Training, SeminarPresentation, Project Work, Educational Tours, Camps etc.

1.2 Each semester curriculum shall normally have a blend of lecture course not exceeding 7 and practicalcourse not exceeding 4.

1.3 The medium of instruction, examinations and project report will be English.

2. Duration of the Programme

A student is normally expected to complete the M.E/M.Tech./M.Arch/M.Sc Programme in 4 semesters but inany case not more than 8 consecutive semesters from the time of commencement of the course. TheHead of the Department shall ensure that every teacher imparts instruction as per the number of hours specifiedin the syllabus and that the teacher teaches the full content of the specified syllabus for the course beingtaught.

3. Requirements for Completion of a Semester

A candidate who has fulfilled the following conditions shall be deemed to have satisfied the requirement forcompletion of a semester.

3.1 He/She secures not less than 90% of overall attendance in that semester.

3.2 Candidates who do not have the requisite attendance for the semester will not be permitted towrite the University Exams.

4. Examinations

The examinations shall normally be conducted between October and December during the odd semesters andbetween March and May in the even semesters. The maximum marks for each theory and practical course(including the project work and Viva Voce examination in the Fourth Semester) shall be 100 with the followingbreakup.

(i) Theory Courses

Internal Assessment : 20 Marks

University Exams : 80 Marks

(ii) Practical courses

Internal Assessment : - -

University Exams : 100 Marks

SATHYABAMA UNIVERSITY FACULTY OF ELECTRONICS ENGINEERING

M.TECH (NANO TECHNOLOGY) i REGULATIONS 2010

5. Passing requirements

(i) A candidate who secures not less than 50% of total marks prescribed for the course (For all coursesincluding Theory, Practicals and Project work) with a minimum of 40 marks out of 80 in the UniversityTheory Examinations, shall be declared to have passed in the Examination.

(ii) If a candidate fails to secure a Pass in a particular course, it is mandatory that he/she shall reappearfor the examination in that course during the next semester when examination is conducted in thatcourse. However the Internal Assessment marks obtained by the candidate in the first attempt shallbe retained and considered valid for all subsequent attempts.

6. Eligibility for the Award of Degree

A student shall be declared to be eligible for the award of the M.E/M.Tech./M.Arch./M.Sc degree provided thestudent has successfully completed the course requirements and has passed all the prescribed examinations inall the 4 semesters within the maximum period specified in clause 2.

7. Award of Credits and Grades

All assessments of a course will be done on absolute marks basis. However, for the purpose of reporting theperformance of a candidate, Letter Grades will be awarded as per the range of total marks (out of 100) obtainedby the candidate as given below:

RANGE OF MARKS FOR GRADES

Range of Marks Grade Grade Points (GP)

90-100 A++ 10

80-89 A+ 9

70-79 B++ 8

60-69 B+ 7

50-59 C 6

00-49 F 0

ABSENT W 0

CUMULATIVE GRADE POINT AVERAGE CALCULATION

The CGPA calculation on a 10 scale basis is used to describe the overall performance of a student inall courses from first semester to the last semester. F and W grades will be excluded for calculating GPAand CGPA.

CGPA = Σi Ci GPi

Σi Ci

where Ci - Credits for the subject

GPi - Grade Point for the subject

Σi - Sum of all subjects successfully cleared during all the semesters


M.TECH (NANO TECHNOLOGY) ii REGULATIONS 2010

8. Classification of the Degree Awarded

1 A candidate who qualifies for the award of the Degree having passed the examination in all thecourses of all the semesters in his/her first appearance within a maximum period of 4 consecutivesemesters after commencement of study securing a CGPA not less than 9.0 shall be declared tohave passed the examination in First Class – Exemplary.

2. A candidate who qualifies for the award of the Degree having passed the examination in all thecourses of all the semesters in his/her first appearance within a maximum period of 4 consecutivesemesters after commencement of study, securing a CGPA not less than 7.5 shall be declared tohave passed the examination in First Class with Distinction.

3. A candidate who qualifies for the award of the Degree having passed the examination in all thecourses of all the semesters within a maximum period of 4 consecutive semesters aftercommencement of study securing a CGPA not less than 6.0 shall be declared to have passedthe examination in First Class.

4 All other candidates who qualify for the award of the Degree having passed the examination in allthe courses of all the 4 semesters within a maximum period of 8 consecutive semesters after his/hercommencement of study securing a CGPA not less than 5.0 shall be declared to have passedthe examination in Second Class.

5 A candidate who is absent in semester examination in a course/project work after having registeredfor the same, shall be considered to have appeared in that examination for the purpose ofclassification of degree. For all the above mentioned classification of Degree, the break of studyduring the programme, will be counted for the purpose of classification of degree.

6 A candidate can apply for revaluation of his/her semester examination answer paper in a theorycourse, within 1 week from the declaration of results, on payment of a prescribed fee along withprescribed application to the Controller of Examinations through the Head of Department. TheController of Examination will arrange for the revaluation and the result will be intimated to thecandidate concerned through the Head of the Department. Revaluation is not permitted for practicalcourses and for project work.

Final Degree is awarded based on the following :

CGPA ≥ 9.0 - First Class - Exemplary

CGPA ≥ 7.50 < 9.0 - First Class with Distinction

CGPA ≥ 6.00 < 7.50 - First Class

CGPA ≥ 5.00 < 6.00 - Second Class

Minimum CGPA requirements for award of Degree is 5.0 CGPA.

9. Discipline

Every student is required to observe disciplined and decorous behaviour both inside and outside the Universityand not to indulge in any activity which will tend to bring down the prestige of the University. If a studentindulges in malpractice in any of the University theory / practical examination, he/she shall be liable for punitiveaction as prescribed by the University from time to time.

10. Revision of Regulations and Curriculum

The University may revise, amend or change the regulations, scheme of examinations and syllabi from time totime, if found necessary.


M.TECH (NANO TECHNOLOGY) iii REGULATIONS 2010

M.Tech - NANOTECHNOLOGY

REGULATIONS 2010 – CURRICULUM

SEMESTER – ISl.No. SUBJECT CODE SUBJECT TITLE L T P C Page No.

THEORY

1 SECX5016 Transforms and Probability for Electronics Engineering 3 1 0 4 1

2 SECX5039 Basics of Nano Technology 3 0 0 3 2

3 SECX5044 Nano Electronics 3 0 0 3 3

4 SECX5019 MOS Device Modeling 3 0 0 3 4

5 SECX5045 Nano–CMOS Circuit and Physical Design 3 0 0 3 5

PRACTICAL

6 SECX6503 EDA Tools Laboratory 0 0 4 2 12

TOTAL CREDITS: 18

SEMESTER – IISl.No. SUBJECT CODE SUBJECT TITLE L T P C Page No.

THEORY

1 SECX5021 Advanced Digital Signal And Image Processing 3 0 0 3 6

2 SECX5046 Thin Film Techniques 3 0 0 3 7

3 SECX5047 Single Electronics Device And modeling 4 0 0 4 8

4 Elective-I 3 0 0 3

5 Elective-II 3 0 0 3

PRACTICAL

6 SECX6506 Nano Electronics Circuits Lab 0 0 4 2 12

TOTAL CREDITS: 18

SEMESTER – IIISl.No. SUBJECT CODE SUBJECT TITLE L T P C Page No.

THEORY

1 SECX5040 NANO Sensors and Applications 3 0 0 4 9

2 SECX5048 NANO Composites 3 0 0 3 10

3 SECX5025 Low Power VLSI Design 3 1 0 4 11

4 Elective-III 3 0 0 3

5 Elective-IV 3 0 0 3

PRACTICAL

6 SECX6507 Nano Simulation Lab 0 0 4 2 12

TOTAL CREDITS: 19


M.TECH (NANO TECHNOLOGY) iv REGULATIONS 2010

SEMESTER – IVSl.No. SUBJECT CODE SUBJECT TITLE L T P C

1 S87XPROJ Project Viva-voce 0 0 30 15

TOTAL CREDITS: 15TOTAL CREDITS FOR THE COURSE: 70

LIST OF ELECTIVE SUBJECTS

Sl.No. SUBJECT CODE SUBJECT TITLE L T P C Page No.

1 SECX5049 Advanced Nano Material Characterization Techniques 3 0 0 3 13

2 SECX5050 NANO And Molecular Electronics 3 0 0 3 14

4 SECX5052 Physical Science for NANO Technology 3 0 0 3 15

5 SECX5053 NANO Scale Processing And Characterisation ForAdvanced Devices

3 0 0 3 16

6 SECX5054 Advanced Nanomaterials 3 0 0 3 17

7 SECX5055 Semiconductors Nanostructure & Nano-particle 3 0 0 3 18

8 SECX5056 Nano and Micromaterials 3 0 0 3 19

9 SECX5057 Metallopolymer Nanocomposites 3 0 0 3 20

10 SECX5058 Optical Properties Of Nanomaterials, Nanophotonics andPlasmonics

3 0 0 3 21

11 SECX5059 Carbon Nanotube Electronics and Device 3 0 0 3 22

12 SECX5060 Modeling Tools and Techniques for NanotechnologyApplications

3 0 0 3 23

13 SECX5061 Nano Photonic Materials 3 0 0 3 24

14 SECX5062 NANO Scale Integrated Computing 3 0 0 3 25

15 SECX5063 NANO Photo Electrochemical Systems 3 0 0 3 26

16 SPHX5001 Condensed Matter Physics 3 0 0 3 27

17 SECX5024 VLSI Signal Processing 3 0 0 3 28

18 SECX5020 VLSI Technology 3 0 0 3 29

19 SECX5051 RF MEMS and Its Applications 3 0 0 3 30

20 SECX5087 Advanced Crystal Growth Techniques 3 0 0 3 31

21 SECX5022 Analog and mixed signal integrated circuits 3 0 0 3 32

L – Lecture hours; T – Tutorial hours; P – Practical hours; C – Credits


M.TECH (NANO TECHNOLOGY) v REGULATIONS 2010

SECX5016TRANSFORMS & PROBABILITY FOR

ELECTRONICS ENGINEERING (Common to VLSI, Embedded, NanoTech)

L T P Credits Total Marks

3 1 0 4 100

UNIT I ID TRANSFORMS 10 hrs.Review of Fourier analysis - Analysis of different periodic & non periodic waveforms – Sampling Theorem -

DFS - DTFT - DFT - inverse DFT- properties - FFT – radix r algorithm – DIT FFT & DIF FFT - Convolution – reviewof Z transform. - Hilbert transform

UNIT II 2D TRANSFORMS 10 hrs.Need for transform – 2D Orthogonal and Unitary transform and its properties – 2D DFT – Properties – FFT –

Statement, proof and properties of Separable transforms – Walsh, Hadamard, Haar, Discrete Sine, DCT, Slant, SVD& KL transforms

UNIT III WAVELET TRANSFORMS 10 hrs.Wavelet transforms - 1D & 2D Wavelet transform - Time and frequency decompositions - STFT - Continues

and discrete - CWT, DWT , Harr wavelet and Shannon wavelet-– Fast Wave let transform – Wavelet Packets.

UNIT IV PROBABILITY & RANDOM VARIABLES 10 hrs.Probability concepts- Random variable - moment generating function - discrete types, continues types -2D variable

random variables – marginal, conditional, joint probability distribution - Binomial, Poisson, uniform, normal andExponential distributions

UNIT V RANDOM PROCESS 10 hrs.Notion of stochastic processes, Auto Correlation – Cross Correlation – WSS – Ergodicity - power spectral density

function – properties - Discrete random process – expectations – variance, co variance – scalar product – energy ofdiscrete signals – parseval,s theorem – Wiener Khintchine relation –- Discrete random signal processing by linearsystems - response of linear discrete systems to white noise - Two dimensional random variables - transformation ofrandom variables - regression system - simulation of white noise – low pass filtering of white noise

TEXT BOOK:1. Alan V. Oppenheim,"Discrete Time Signal Processing", Prentice Hall, 2009.

REFERENCE BOOKS:1. Rafael C.Gonzalez, "Digital Image Processing", Pearson Prentice Hall, 2008.2. Raghuveer Rao,"Wavelet Transform", Pearson Education, 1998. 3. Simon Haykin, "Communication Systems", John Wiley & Sons, 2009.

UNIVERSITY EXAM QUESTION PAPER PATTERN

Max. Marks: 80 Exam Duration: 3 hrs.Part A: 6 Questions of 5 marks each – No choice 30 marksPart B: 2 Questions from each unit of internal choice, each carrying 10 marks. 50 marks


M.TECH (NANO TECHNOLOGY) 1 REGULATIONS 2010

SECX5039BASICS OF NANOTECHNOLOGY(Common to VLSI, Nanotechnology)


3 0 0 3 100

UNIT I INTRODUCTION TO NANOTECHNOLOGY 10 hrs.

Nanoscale technology: Consequences of the nanoscale for technology and society. Beyond Moore’s Law.Molecular building blocks for nanostructure systems, Nano-scale 1D to 3D structures,

Energy Band Diagram: Energy level diagram, Fermi function, n-type operation, p-type operation, Rate equationsfor a one-level model, Current in a one-level model, Inflow / Outflow, Pauli blocking, quantum of conductance, Potentialprofile, Iterative procedure for self-consistent solution, Quantum capacitance, Negative Differential Resistance (NDR).

UNIT II ELECTRICAL RESISTANCE-AN ATOMISTIC VIEW 10 hrs.

Negative differential resistance-thermo electric effect-Nano transistors-inelastic spectroscopy-NEGF formalism-inputparameters-derivation of NEGF equations-model Hamiltonian.

UNIT III MOLECULAR ELECTRONIC DEVICES 10 hrs.

Basic Concepts- Self assembled Layers, Charge transport Mechanisms; Synthesis of Molecular wires and devices– synthesis of two terminal devices, Fabrication of molecular transport devices; Simple SAM metal-insulator-metalTunneling.

UNIT IV NANOSCALE DEVICE MODELING 10 hrs.

Inadequacy of macroscopic models, Equilibrium, Non-Equilibrium, Density Matrix and current operator; NEGFFormalism – Broadening.

UNIT V NANOSCALE DEVICE MODELING 10 hrs.

Quantum Point Contact- Hamiltonian, Self energy; SAM- Signals used to control and probe molecules, Synthesis;Fabrication and overview of Nanotube devices- their properties.

REFERENCE BOOKS:1. Mark A. Reed and Takhee Lee, "Molecular Nano electronics", American Scientific Publishers, 2003.2. Suprio Dutta Tutorial on, “Electrical Resistance-an atomistic view”, Purdue University, 20043. Horst-Gunter Rubahn, "Basics of Nano Technology", Wiley-VCH Verlag Gmbh & Co, 2008.4. Chris Binns, "Introduction to Nanoscience and NanoTechnology", John Wiley and Sons., 2010.


Max. Marks: 80 Exam Duration: 3 hrs.

Part A: 6 Questions of 5 marks each – No choice 30 marks

Part B: 2 Questions from each unit of internal choice, each carrying 10 marks. 50 marks



SECX5044 NANO ELECTRONICSL T P Credits Total Marks

3 0 0 3 100

UNIT I 10 hrs.

Electronic states in crystal energy bands, Concepts of 2D nanostructures (quantum wells), 1D nanostructures(quantum wires) 1D nanostructures (quantum dots), artificial atomic clusters.

UNIT II 10 hrs.

Size dependent properties, Size dependent absorption spectra, Blue shift with smaller sizes, Phonons innanostructures, Contacts at Nano level, AFM. lSTM tip on a surface, Electron charge and spin transport in organicand semiconductor nanodevice.

UNIT III 10 hrs.

Charging of quantum dots, Coulomb blockade, Quantum mechanical treatment of quantum wells, wires and dots,Widening of bandgap in quantum dots, Strong and weak confinement, Properties of coupled quantum dots, Opticalscattering from Nan defects, spin field effect transistor.

UNIT IV 10 hrs.

Nanocomposites Electronic and atomic structure of aggregates and nanoparticles-Theory and modeling ofnanoparticles fictionalization processes-Nano crystalline structure, Nano crystalline silicon, Zeolites and Nanoclusters inZeolite Host Lattices-Nano structure based electronic devices- Quantum Cascade Laser- Carbon Nanotube Devices

UNIT V 10 hrs.

Nanosystems: Synthesis and chacterization Methods of Synthesis: Molecular beam epitaxy, MOCVD, chemicalroutes, nanoparticles on polymers, pulsed laser deposition, ion beam assisted techniques including embeddednanoparticles, RF sputtering.

REFERENCE BOOKS:1. K.Bamam and D.Vvedensky, "Low Dimensional Semiconductor Structures", Cambrige University Book, 2001.2. L.Banyai and S.W.Koch, "Semiconductor Quantum Dots", World Scientific Publishing, 1993.3. J.H. Davies, "An introduction to the physics-af low dimensional semiconductors" , Cambridge Press, 1998.4. Karl Goser, Peter Glosekotter, Jan Dienstuhl, "Nanoelectronics and Nanosystems", Springer, 2004. 5. Dr.W.R.Fahrner, "Nanotechnology and Nanoelectronics Materials, Devices, Measurement Techniques", Springer, 2005.


Max. Marks: 80 Exam Duration : 3 hrs





SECX5019MOS DEVICE MODELING

(Common to VLSI, NanoTech)L T P Credits Total Marks

3 0 0 3 100

UNIT I 10 hrs.Overview of MOS: Characteristics of a MOS transistor-Surface properties of Silicon : Energy band diagram for

the ideal case-Calculation of the threshold voltage(vt) – Non ideal effects- CV plots: importance – Ideal case – Highfrequency CV plots – low Frequency CV plots – Equations to CV plots – Deep depletion – Deviations from the IdealCV plots: interface traps, Effect of AC signal on the interface states – Techniques to measure Cit, computation of Csand Ps – Limitation in high frequency techniques – Comparison of measurements at high and low frequency techniques.

UNIT II 10 hrs.Sources of Oxide Trapped charge – radiation created oxide trapped charge – Experimental results – How Oxide

Trapped charge can be annealed out – models to explain the technique – Shifts in threshold voltage in P-channeland N-channel MOSFET – Disadvantages – Shifts at dynamic bias – radiation hardening – Other alternatives dielectrics –gate metallization

UNIT III 10 hrs.MOSFET- Parameters of importance – Qualitative analysis of MOSFET – Mathematical model of IV characteristics –

SPICE level1, level 2, level 3 models – Change in velocity with electric field – Expression for Id in the sub thresholdregion of operation.

UNIT IV 10 hrs.Non uniform doping and effect on threshold voltage – short channel effect – Narrow width effect – Small Geometry

effects – Shrink and Scaling.Small signal analysis of MOSFET – Derivation of the different parameters associated withthe small signal model – Cutoff frequency – Hot carrier effects – 1988 model – Monte-Carlo analysis

UNIT V 10 hrs.MOSFET devices – HMOS, DMOS, DIMOS, UMOS, VMOS, Sy MOSFET, SOS, Si MOX, BESOI, SEU, FAMOS,

MCOS – Comparison with the conventional CMOS.MOS Device application : Depletion mode device – MOSFETconnected as load devices - MOSFET as resistors, Static protection.

TEXT BOOK:1. Dewitt G. Ong, "Modern MOS technology: processes, Devices and Design", McGraw-Hill, 1984.

REFERENCE BOOKS:1. Sorab K.Gandhi, "Semiconductor Device Principle", John Wiley & Sons, 1994.2. Sze S.M., "VLSI technology", McGraw-Hill, 2003.


Max. Marks: 80 Exam Duration : 3 hrsPart A: 6 Questions of 5 marks each – No choice 30 marksPart B: 2 Questions from each unit of internal choice, each carrying 10 marks. 50 marks



SECX5045 NANO – CMOS CIRCUIT AND PHYSICAL DESIGNL T P Credits Total Marks

3 0 0 3 100

UNIT I NANO-CMOS SCALING PROBLEMS AND IMPLICATIONS 10 hrs.Design Methodology in the Nano-CMOS Era, Scaling, Overview of Sub-100-nm Scaling Challenges and

Subwavelength Optical Lithography, Back-End-of-Line Challenges (Metallization), Front-End-of-Line Challenges(Transistors), Process Control and Reliability Lithographic Issues and Mask Data Explosion, New Breed of Circuit andPhysical Design, Modeling Challenges, Need for Design Methodology Changes

UNIT II THEORY AND PRACTICALITIES OFSUBWAVELENGTH OPTICAL LITHOGRAPH 10 hrs.Introduction and Simple Imaging Theory, Challenges for the 100-nm Node, ê-Factor for the 100-nm Node,

Significant Process Variations, Impact of Low-ê Imaging on Process-Sensitivities, Low-ê Imaging and Impact on DepthofFocus, Low-ê Imaging and Exposure Tolerance, Low-ê Imaging and Impact on Mask Error, Enhancement Factor,Low-ê Imaging and Sensitivity to Aberrations ,Low-ê Imaging and CD Variation as a Functionof Pitch, Low-ê Imagingand Corner Rounding Radius, Resolution Enhancement Techniques: Physics, Specialized Illumination Patterns, OpticalProximity Corrections, Subresolution Assist Features, Alternating Phase-Shift Masks, Physical Design Style Impact onRET and OPC Complexity, Specialized Illumination Conditions- Two-Dimensional Layouts, Alternating Phase-Shift Masks,Mask Costs,

UNIT III PROCESS SCALING IMPACT ON DESIGN MIXED-SIGNAL CIRCUIT DESIGN 10 hrs.Introduction - Design Considerations, Device Modeling, Passive Components, Design Methodology - Benchmark

Circuits, Design Using Thin Oxide Devices - Design Using Thick Oxide Devices, Low-Voltage Techniques, CurrentMirrors, Input Stages, Output Stages, Bandgap References, Design Procedures, Electrostatic Discharge Protection,Multiple-Supply Concerns, Noise Isolation, Guard Ring Structures, Isolated NMOS Devices, Epitaxial Material versusBulk Silicon, Decoupling, Power Busing, Integration Problems, Corner Regions, Neighboring Circuitry,

UNIT IV ELECTROSTATIC DISCHARGE PROTECTION DESIGN 10 hrs.Introduction - ESD Standards and Models, ESD Protection Design, ESD Protection Scheme, Turn-on Uniformity

of ESD Protection Devices, ESD Implantation and Silicide Blocking, ESD Protection Guidelines, Low-C ESD ProtectionDesign for High-Speed I/O, ESD Protection for High-Speed I/O or Analog Pins, Low-C ESD Protection Design, InputCapacitance Calculations, ESD Robustness, Turn-on Verification, ESD Protection Design for Mixed-Voltage I/O,Mixed-Voltage I/O Interfaces, ESD Concerns for Mixed-Voltage I/O Interfaces, ESD Protection Device for aMixed-Voltage I/O Interface, ESD Protection Circuit Design for a Mixed-VoltageI/O Interface, ESD Robustness, Turn-onVerification, SCR Devices for ESD Protection, Turn-on Mechanism of SCR Devices, SCR-Based Devices for CMOSOn-Chip ESD Protection,

UNIT V SIGNAL INTEGRITY PROBLEMS IN ON-CHIP INTERCONNECTS 10 hrs.Introduction - Interconnect Figures of Merit, Interconnect Parasitics Extraction, Circuit Representation of

Interconnects, RC Extraction, Inductance Extraction, Signal Integrity Analysis, Interconnect Driver Models, RCInterconnect Analysis, RLC Interconnect Analysis, Noise-Aware Timing Analysis, Design Solutions for Signal Integrity,Physical Design Techniques, Circuit Techniques.

TEXT BOOKS: 1. Ban P. Wong, Anurag Mittal, Yu CaoGreg Starr, "NANO-CMOS CIRCUITAND PHYSICAL DESIGN", John Wiley & Sons, Inc.,

Hoboken, New Jersey. 2000. 2. Charles chiang, Jamil Kawa, "Design for manufacturability and yield for Nano - Scale CMOS", Springer, 2007. 3. Oleg Semenov, Hossein Sarbishael, ManojSachdev, "ESD Protection Device and Circuit Design for Advanced CMOS Technologies",

Springer, 2008.

UNIVERSITY EXAM QUESTION PAPER PATTERNMax. Marks: 80 Exam Duration : 3 hrsPart A: 6 Questions of 5 marks each – No choice 30 marksPart B: 2 Questions from each unit of internal choice, each carrying 10 marks. 50 marks



SECX5021ADVANCED DIGITAL SIGNAL AND IMAGE

PROCESSING(Common to VLSI, NanoTech, Embedded and E&C)


3 0 0 3 100

UNIT I SPECTRUM ESTIMATION & PREDICTION 10 hrs.

Review of FIR, IIR, filters-Signal analysis using Fourier Transform - Periodogram- sample auto correlation- sumdecomposition theorem- spectral factorization theorem- non parametric method- correlation method- co varianceestimator- unbiased, consistant estimator- periodogram estimator- Bartlett spectrum estimation- Welch estimation- modelbased approach- AR- MA- ARMA signal modeling- parameter estimation using yule walker method- least mean squareerror criterion- Wiener filter-linear prediction- forward backward prediction- levinson recursion algorithm for solving toeplitzsystem of equations

UNIT II ADAPTIVE FILTERS 10 hrs.

FIR adaptive filter- Newton steepest descent method – widrow hoff LMS adaptive algorithm- adaptive channelequalization- adaptive echo cancellor- adaptive noise cancellasion- RLS adaptive filter- simplified IIR LMS adaptivefilter.

UNIT III MULTI RATE SIGNAL PROCESSING 10 hrs.

Mathematical description of change of sampling rate- interpolation- decimation- continuous time model- directdigtal domain approach- decimation by an integer factor- interpolation by an integer factor- single and multi stagerealization-poly phase realision- filteer bank implementation- application to sub band coding.

UNIT IV IMAGE ENHANCEMENT AND RESTORATION 10 hrs.

Elements of digital image processing systems- elements of visual perception- structure of human eye-Monochrome vision model- image enhancement and restoration-Spatial domain method- histogram processing- spatialfiltering- edge crispening- interpolation- homomorphic filtering – degradation model- diaginalization of Circulant andBlock Circu;ant Matrices-Algebraic Approach to restoration- constrained and unconstrained restoration- inverse filteringand wiener filter-Image morphology.

UNIT V IMAGE DATA COMPRESSION 10 hrs.

Fundamentals of coding- image compression model- fundamental coding theorem shannon’s coding, Huffmancoding- pixel coding- predictive techniques- lossy and loseless predictive coding- variable length coding, bit plain coding-transform coding, zonal and threshold coding, image compression standard- CCITT and JPEG standards.

TEXT BOOK:1. Monson Hayes, "Monson Hayes, Statistical digital signal processing and modeling", John Wiley & Sons, 2002.

REFERENCE BOOKS:1. John G Proakis, "Digital signal processing", Pearson Prentice Hall, 2007.2. Simon Haykin, "Adaptive filter theory", Prentice Hall, 2002. 3. Anil K Jain, "Fundamental of Digital image processing", Prentice Hall, 1989.4. Rafael Gonzalez, "Digital Image Processing", Pearson Prentice Hall, 2008.







SECX5046 THIN FILM TECHNIQUESL T P Credits Total Marks

3 0 0 3 100

UNIT I DEFINITION OF THIN FILMS 10 hrs.Environment (gas phase and plasma) for thin film deposition; requirement for substrate; substrate cleaning;

deposition parameters and their effects on film growth,nanocrystalline thin film.

STRUCTURE OF THIN FILMS:Formation of thin films (sticking coefficient, formation of thermodynamically stable cluster-nucleation);

microstructure, surface roughness; density; stress in thin films; adhesion; stoichiometry; metastable structure.

UNIT II PHYSICAL PARAMETERS FOR EVALUATION OF THIN FILM 10 hrs.Mechanical, electrical, thermal, chemical, optical.

VACCUME TECHNOLOGY:Concept of different vaccum pumps;rotary, diffusion,turbo molecular pump, cryogenic pump, ti-sublimation pump,

gas kinetics; concept of different gauges : pirani, penning, pressure control.

UNIT III PHYSICAL VAPOUR DEPOSITION (PVD) TECHNIQUES 10 hrs.Thermal evaporation,resistance evaporation ;electron beam evaporation ;laser abalation ;ion vapor evaporation

and cathodic arc deposition. Electrical discharges used in thin film deposition:Sputtering;glow discharge Sputtering;magnetron Sputtering ; ion beam Sputtering ; ion plating ; oxidizing and nitriding.

UNIT IV ATOMIC LAYER DEPOSITION (ALD) 10 hrs.Importance of ALD technique, atomic layer growth:physics and technology. Chemical vapor deposition techniques:

Advantages and disadvantages of Chemical vapor deposition techniques(CVD) over PVD techniques, reaction types,boundaries and flow, different kinds of CVD techniques: metallorganic (MO) CVD,photoassisted CVD, thermally activatedCVD, plasma enhanced( RF, wave) CVD,low pressure(LP) CVD, atmospheric pressure(AP) CVD and Pulsed laserdeposition technique.

UNIT V PROCESSING TECHNOLOGIES 10 hrs.Pattern transfer: reactive ion etching, ion milling, ion beam dry itching, Molecular beam epitaxy.

Applications: Thin Film Photo voltaic cells,Thin film Batteries.

REFERENCE BOOKS: 1. Chopra K.L., "Thin film phenomenon", Tata McGraw-Hill, 1968. 2. Chang C.Y. and Sze S.M., ’VLSI tehnology’ Tata McGraw-Hill,1996. 3. Ghandhi S.K. , VLSI fabrication principles; silicon and gallium arsenide, 2nd Edition, John Wiley and Sons, 1994. 4. G.L. and Carlson R.W. “Methods of experimental physics” vol 14.’ 3.Vaccume physics and technology’J.F.O’Hanlon." A Users guide

to vaccume technology "John Wiley and Sons, 1989. 5. Roth A., "Vaccume Technology" north-holland, 1990. 6. Delchar T.A., "vaccum physics and techniques", Chapman and hall, 1993. 7. Hirth J.P. and Pound G.M. "Evaporation: nucleation and growth kinetics" Pergamon press, Oxford, 1963.




SECX5047 SINGLE ELECTRONICS DEVICE AND MODELINGL T P Credits Total Marks

4 0 0 4 100

UNIT I INTRODUCTION 10 hrs.

principle of single electronic transistor – the coulomb blockade, theoretical quantum dot transistor;- energy ofquantum dot system, conductance oscillation and potential fluctuation, transport under finite temperature and finite bias,single electron effect, modeling of transport: tunneling- tunneling in oxide, quantum kinetic equation, carrier statisticsand charge fluctuations, performance of single- electron transistor, technology.

UNIT II BASIC SINGLE- ELECTRON DEVICES 10 hrs.

SINGLE electron box, single electron transistor,single electron trap, single electron turnsile and pump, SEToscillators, superconductor systems; device structure and fabrication-experimental results and analysis-single-electronquantum-dot transistor, single hole, quantum dot transistor, transport characteristics under finite bias, transport throughexited states, artificial atom, single charge trapping, SET circuit design- wiring and drivers, logic memory circuits, SETadder as an example of a distributed circuit, comparison between FET and SET circuit designs.

UNIT III ANALOG AND DIGITAL APPLICATIONS 10 hrs.

Voltage state logics, charge state logics, problems, background-charge-insensitive memory, crested tunnel barriers,nonvolatile random access memory (NOVORAM), other single electron and few electron devices and memories,electrostatic data storage (ESTOR).

UNIT IV SINGLE ELECTRON TRANSISTORS AND THEIR MEMORIES 10 hrs.

Introduction to memory devices, floating gate scheme, single electron MOS memory (SEMM)-Structure, FabricationProcedure, experimental observations, analysis, effect of trap states effect of thicker tunnel diode experimental behaviorof memories- percolation effects, limitations in use of field effect, confinement and random effects. In semiconductors,variances due to dimensions, limits due to tunneling, tunneling fabricated SESO transistor. SESO memory, memory -technology comparison.

UNIT V SIMULATION METHODS AND NUMERICAL ALGORITHMS 10 hrs.

Monte-carlo in oxide, tunneling in silicon; SESO transistor- history, single electron devices to SESO, method,solution of the master equation, coupling with SPICE, free energy, tunnel transmission coefficient, energy levels,evaluation schemes for co tunneling, rate calculation including electromagnetic environment, numerical integration oftunnel rates, time dependent node voltages and node charges, stability diagram and stable states, capacitancecalculations, SIMON single- electron software package.

REFERENCE BOOKS: 1. shunri oda, david ferry, "Silicon Nanoelectronics", CRC press, Taylor and Francis group,2006. 2. Goser K. "Nanaoelectronics and nanosystems", springer, 2005. 3. R.Tsu "supperlatice to nanoelectronics", Elsevier, 2005. 4. Korotkov A.N., averin D.V., Likharev K.K., Vasenko S.A.,"single-electron transistors as ultrasensitive electrometers",single -electron

tunneling and mesoscopic devices",springer,1992. 5. Averin D.V., Nazarov Y.V., "microscopic quantum tunneling of charge and cotunneling",in H.Grabert, M.H. Devoret(eds),"single charge

tunneling: columb blockade phenomena in nanostructures",Plenum press and NATO scientific affairs division,new york and london,1992 6. Christoph wasshubler." Computational single- electronics", springer,2001.







SECX5040NANO SENSORS AND APPLICATIONS


3 0 0 3 100

UNIT I 10 hrs.Fundamentals of Nano Sensors: Micro and nano-sensors, Fundamentals of sensors, biosensor, micro fluids,

MEMS and NEMS, Packaging and characterization of sensors, Method of packaging at zero level, dye level and firstlevel.Sensors.

UNIT II 10 hrs.

Quantum Structures and Devices:Quantum layers, wells, dots and wires, Mesoscopic Devices, NanoscaleTransistors, Single Electron Transistors, MOSFET and NanoFET, Resonant Tunneling Devices, Carbon Nanotube basedlogic gates, optical devices. Connection with quantum dots, quantum wires, and quantum wells.

UNIT III 10 hrs.

Sensors for aerospace and defense: Accelerometer, Pressure Sensor, Night Vision System, Nano tweezers,nano-cutting tools, Integration of sensor with actuators and electronic circuitry, Civil applications: metrology, bridgesand other industrial applications.

UNIT IV 10 hrs.

Biosensors: Clinical Diagnostics, generation of biosensors, immobilization, characteristics, applications, conductingPolymer based sensor, DNA Biosensors, optical sensors. Biochips. Metal Insulator Semiconductor devices, molecularelectronics, information storage, molecular switching, Schottky devices. Sensor for bio-medical applications: Cardiology,Neurology and as diagnostic tool.

UNIT V 10 hrs.Magnetic biosensors: Introduction, Magnetoresistance-based sensors, Hall effect sensors, Other sensors detecting

stray magnetic fields, Sensors detecting magnetic relaxations, Sensors detecting ferrofluid susceptibility.

REFERENCE BOOKS: 1. Meixner H., "Sensors: Micro & Nanosensors, Sensor Market trends" Wiley-VCH, 1995. 2. Ping Sheng, Zikang Tang "Nanoscience & Technology: Novel structure and phenomena"Taylor & Francis, 2003. 3. Michael Rieth. "Nano Engineering in Science & Technology : An introduction to the world of nano design" World Scientific publishing

Co.pte.ltd, 2003 4. Vijay K.Varadan "Nanosensors,Microsensors,and Biosensors and Systems",SPIE-International Society for Optical Engine, 2007. 5. Larry Nagahara, Nongjian Tao, Thomas Thundat, "Introduction to Nanosensors Series: Nanostructure Science and Technology",

Springer-Verlag New York Inc, 2008.





SECX5048 NANO COMPOSITESL T P Credits Total Marks

3 0 0 3 100

UNIT I NANOCOMPOSITES MATERIALS TECHNOLOGY OVERVIEW 10 hrs.

Basic definitions and types of composites and matrix materials – hybrid nanocomposites-type and shape ofvarious nanoparticles such as nanoclays, carbon Nanofibers, carbon nanotubes, silica and alumina - different polymerssuch as thermoplastic, thermoset and elastomer - characterization of nanocomposite dispersibility - polymernanocomposite distinctive features (electrical, thermal and mechanical).

UNIT II NANOCOMPOSITES FABRICATION AND MANUFACTURING 10 hrs.

Polymer Matrix-Transformation of polymers into polymer nanocomposites- Types of Montmorillonite Clay fillers –CNT fillers – intercalated and exfoliated - Weight ratios-Polymer Nanocomposites fabrication – Extrusion Process –Singleand Twin screw extruders –Master batching.

UNIT III TEST METHODS FOR COMPOSITE MATERIALS AND STRUCTURES 10 hrs.

Extruders – ASTM specimen standards - Specimen selection and preparation procedures-Tensile, compressive,flexure, shear and fracture toughness tests, Volume resistivity, Surface resistivity, Permittivity, Dielectric strength, arcresistant, Thermal Gravimetric analysis (TGA),Heat deflection temperature (HDT).

UNIT IV STUDIES ON NANOCOMPOSITES 10 hrs.

Morphological Studies – Scanning Electron Microscopy (SEM) / Transmission Electron Microscopy (TEM) / AtomicForce Microscopy (AFM) – Dielectric Studies – Structural and Thermal studies – Melt Flow Index (MFI) – Fouriertransform Infra-red (FTIR) – XRay Diffraction (XRD) – biodegradation – Recycling strategies for thermoplastic composites –Case study.

UNIT V RECYCLING AND APPLICATIONS OF NANOCOMPOSITES 10 hrs.

Recyling Process- Flowchart-Properties and property changes over virgin material- Contaminants-Role ofContaminants in property change. Electrical, Electronic, Automotive and Aerospace applications of Nanocompositeswith examples. Use of Recycled polymers and Metro Solid Waste (MSW) – Case Study-Future regulatory issues onPolymer nanocomposites based on Solid Waste Management.

REFERENCE BOOKS:1. Ajayan P.M., Schadler L.S., Braun P.V. "Nanocomposites Science and Technology", Wiley-VCH, 2003.2. Riichiro Saito, Gene Dresslhaus, and Dresselhaus M.S., "Physical Properties of Carbon Nanotubes", Imperial College Press, 1999.3. Endo M., Iijima S., Dresselhaus M.S. "Carbon Nanotubes", Pergamon, 1996.


Max. Marks: 80 Exam Duration : 3 hrs.Part A: 6 Questions of 5 marks each – No choice 30 marks




SECX5025LOW POWER VLSI DESIGN(Common to VLSI, NanoTech)


3 1 0 4 100

UNIT I 10 hrs.Introduction- Need for Low power VLSI design– Charging and Discharging Capacitance- Short circuit current in

CMOS– CMOS leakage current- Static current- Principles of Low power design- Low power figure of Merits.

UNIT II 10 hrs.Simulation power analysis- SPICE circuit analysis- Discrete Transistor Modeling and analysis - Gate level Logic

simulation - Architecture level analysis - Data Correlation analysis in DSP systems - Monte Carlo Simulation - RandomLogic signal- Probability Power analysis techniques- Signal entropy.

UNIT III 10 hrs.Transistor and gate sizing-Network Restructuring and Reorganization- special latches and Flip-flops-Low power

digital cell library - Gate Reorganization- Signal Gating –Logic Encoding -State Machine encoding- PrecomputationLogic.

UNIT IV 10 hrs.Special Techniques- Power reduction in clock networks- CMOS floating node -Low power Bus -Delay Balancing-

Low power techniques for SRAM- Architecture and system- Power and performance management -Switching activityreduction -Parallel Architecture –Flow graph transformation.

UNIT V 10 hrs.Advanced techniques- Adiabatic Computation- Pass transistor Logic synthesis -Asynchronous circuits - Software

Design for Low power-Sources of software power dissipation- Software power optimization.

TEXT BOOK:1. Gary Yeap "Practical Low Power Digital VLSI design" Kluwer Academic Publishers, 2009.

REFERENCE BOOKS: 1. Sharat Prasad and Koushik Roy "CMOS Low power VLSI design", John Wiley & Sons., 2000. 2. Kiat Seng Yeo & Kaushik Roy, "Low voltage, Low power VLSI subsystems", McGraw-Hill, 2005. 3. Meloberti Franco, "Analog design for CMOS VLSI systems", Kluwer Academic Publishers, 2001. 4. Abdellatif Bellaouar, "Low-Power Digital VLSI Design: Circuits and Systems", Kluwer Academic Publishers, 2000. 5. Saraju P. Mohanty-Nagarajan Ranganathan, Elias Kougianos, Priyardarsan Patra, "Low-Power High-Level Synthesis for Nanoscale

CMOS Circuits", Springer, 2009.





SECX6503EDA TOOLS LABORATORY


0 0 4 2 100

Analog experiments

I. To acquire the knowledge of designing and simulation of basic analog circuits using Pspice

1. Analog amplifiers. 2. Oscillators 3. BJT biasing circuits 4. FET characteristics 5. Multivibrators 6. RLC circuits 7. Passive filters 8. Attenuators

9. Electrical circuit theorems Superposition TheoremMaximum power transfer theorem Norton’s Theorem ReciprocityTheorem

10. Waveform Generation Circuits Schmitt Trigger Square wave Generator Switch mode power supply (SMPS) SchmittTrigger

11. Diode Experiments 12. Modulation Circuits 13. Op- amps Digital Experiments 14. Combinational Circuits 15. Sequential Circuits 16. Inverters with various types of load17. Scaling of MOS devices

II. Preparation of Layouts using MAGIC.For all experiments shown above, the VLSI layout would be prepared by using the tool MAGIC.

SECX6505 NANO ELECTRONICS CIRCUITS LABL T P Credits Total Marks

0 0 4 2 100

1. Single electron Universal Fredkin gate 2. Single electron control not gate 3. Single electron half adder 4. Single electron Full adder 5. Single electron 2 to 4 Decoder 6. Single electron Encoder 7. Single electron Flip-Flop 8. Single electron OTA

9. Single electron BOTA 10. Single electron analog circuits

SECX6507 NANO SIMULATION LABL T P Credits Total Marks

0 0 4 2 100

Experiments using SIMON Software Package

1. Study of SIMON software and understanding of its toolbox components. 2. VI Characteristics of single electron transistor at tunneling junction 3. Design and simulation of Hybrid inverter 4. Design and simulation of

(i) Combinational logic circuits

(ii) Sequential logic circuits

(iii) Analog circuits

(iv) A/D mixed circuits



SECX5049ADVANCED NANO MATERIAL

CHARACTERIZATION TECHNIQUESL T P Credits Total Marks

3 0 0 3 100

UNIT I ELECTRON MICROSCOPY 10 hrs.

Necessity of Morphological studies-overview of Elelctron Microscopy, Different types-principles, and applicationof EELS, EDX & WDX, FE-SEM, HR-TEM, HAADF, RHEED, limitations and Accuracies.

UNIT II X-RAY PHOTOELECTRON SPECTROSCOPY 10 hrs.

Principles of X-ray Spectroscopies,configurations,design and principles of ARXPS & UPS, XANES, NEXAFS,EXAFS-case study of XRD.

UNIT III SCANNING PROBE MICROSCOPY AND APPLICATION 10 hrs.

Nano indentation-Force modulation-scanning tunneling microscope (STM) principle-conductive Fm-Basic principlesand application of EFM, MFM, AFM, SCM, ECAFM, ECSTM..

UNIT IV NEAR FIELD MICROSCOPY 10 hrs.

Principle of operation of Micro-and near field Raman Spectroscopy,Surface-enhanced Raman Spectroscopy,Computational techniques for far-field representations from near field measurements.

UNIT V SQUID MAGNETOMETER 10 hrs.

Electron pair waves-phase and coherence_Effect of magnetic field-Fluxoid-josephson tunneling-SQUID-SQUIDmagnetometer-Applications of SQUID magnetometry in Nanotechnology.

REFERENCE BOOKS:1. Nalwa H.S., "Handbook of Nanostructured Materials and Nanotechnology", Academic Press, 2000.2. Goodhew P.J. and Humphreys F.J., "Electron Microscopy And Analysis", Taylor and Francis, 2000.3. Woodruff D.P. and Delchar T.A., "Modern techniques of surface science", Cambridge University Press, Cambridge, 1994.4. Sutton A.P., "Electronic Structure of Materials", Oxford University Press, 1993.







SECX5050 NANO AND MOLECULAR ELECTRONICSL T P Credits Total Marks

3 0 0 3 100

UNIT I MOLECULAR ELECTRONIC COMPUTING ARCHITECTURES 10 hrs.

Molecular Electronic Computing Architectures: Present Microelectronic Technology, Fundamental PhysicalLimitations of Present, Technology, Molecular Electronics, Computer Architectures Based on Molecular, Electronics,Characterization of Switches and Complex Molecular Devices.

UNIT II UNIMOLECULAR ELECTRONICS 10 hrs.Unimolecular Electronics: Donors and Acceptors, Homos and LumosContacts, Two-Probe, Three-Probe, and

Four-Probe Electrical Measurements, Resistors, Rectifiers or Diodes,Switches, Capacitors, Future Flash Memories,Field-Effect, Transistors, Negative Differential Resistance Devices, Coulomb Blockade Device, and Single-ElectronTransistor,Future Unimolecular Amplifiers,Future Organic Interconnects, Three-Dimensional Molecular Electronics andIntegrated Circuits for Signal and Information Processing Platforms: Data and Signal Processing Platforms,Microelectronics and Nanoelectronics: Performance Estimates, Synthesis, Taxonomy in Design of MICS and ProcessingPlatforms.

UNIT III THE DESIGN OF THREE-DIMENSIONAL MOLECULAR INTEGRATED CIRCUITS 10 hrs.The Design of Three-Dimensional Molecular Integrated Circuits: Data Structures, Decision Diagrams, and Hyper

cells, Decision Diagrams and Logic Design of MICS, Hypercell Design, Three-Dimensional Molecular Signal/DataProcessing and Memory Platforms,Hierarchical Finite-State Machines and Their Use in Hardware and SoftwareDesign,Adaptive Defect-Tolerant Molecular Presenting-and-Memory Platforms, Hardware–Software Design, The Design andSynthesis of Molecular, Electronic Devices: Molecular Towards Molecular Integrated Circuits, Molecular IntegratedCircuits,Modeling and Analysis of Molecular Electronic Devices, Particle Velocity, Particle and Potentials, TheSchrödinger Equation, Quantum Mechanics and Molecular Electronic Devices: Three-Dimensional Problems, Green’sFunction Formalism, Multiterminal Quantum-Effect ME Devices.

UNIT IV MOLECULAR ELECTRONICS DEVICES 10 hrs.

Molecular Electronics Devices: Experimental Techniques, Molecular Conductance, Molecular Adsorption on MetalSurfaces and Role of the Electrodes,Role of Surface Defects,Chemisorption, Alligator Clips for Molecular Electronics,The Theory of Electron Transport in Molecules,Quantum Current, Relevant Length Scales, Scattering, SequentialTransport, The Non-Equilibrium Green’s, Function Method, Computational Tools and Algorithms,DFT and NEGF forTransport Calculations, General Algorithms,Modeling of the Electrodes.

UNIT V SIMULATION TOOLS IN MOLECULAR ELECTRONICS 10 hrs.Simulation Tools in Molecular Electronics: Quantum Transport Tools,The gDFTB Approach, Incoherent

Electron–Phonon, Scattering, Power Dissipation in Molecular Junctions, Power Dissipation in a Si-Styrene-Ag System,Applications to Octanethiols, Simulation of Organic Thin Film Devices,The Drift–Diffusion Method, OrganicSemiconductor, Materials, Simulation of Organic Thin Film Transistors,, Traps in Organic Thin Films, Influence ofInterface Traps, and Charges on Device Characteristics, Static and Transient IV Simulations,Analysis and Optimizationof Organic Logic Circuits, Inverter Circuits, Application to Organic Ring Oscillators.

REFERENCE BOOKS:1. Sergey Edward Lyshevski, "Nano and Molecular Electronics", CRC Press, 2007.2. James M. Tour and Dustin K. James, "Molecular Electronic Computing Architectures", World Scientific Publishing Co.pte.Ltd, 2003. 3. Mark A. Reed, Takhee Lee," Unimolecular Electronics: Results and Prospects", American Scientific Publishers, 2003.





SECX5052 PHYSICAL SCIENCE FOR NANO TECHNOLOGYL T P Credits Total Marks

3 0 0 3 100

UNIT I INTRODUCTION TO QUANTUM AND STATISTICAL PHYSICS 10 hrs.

Electrons as waves, wave mechanics, Schrödinger’s equation and particle in a box; eisenberg’s UncertaintyPrinciple. Introduction to the operator formalism – bras, kets, expectation values, spin and the exclusion principle.Boltzmann distribution; indistinguishable particles – Fermi-Dirac and Bose-Einsteindistributions.

UNIT II INTRODUCTION TO SOLID STATE PHYSICS 10 hrs.

Crystal structure; free electron theory of metals; band theory of solids; metals and insulators; semiconductors:classification, electrons and holes, transport properties; size and dimensionality effects-quantum,wells,wiresanddots.

UNIT III PRINCIPLES OF SEMICONDUCTOR DEVICES 10 hrs.

The p-n junction and the bipolar transistor; metal-semiconductor and metal-insulator-semiconductor junctions;field-effect transistors, MOSFETs, CMOS; heterostructures, high electron mobility devices, HEMTs; Quantum Hall Effect;Introduction to single electron transistors (SETs): quantum dots, single electron effects, Coulomb blockade.

UNIT IV INTRODUCTION TO MAGNETISM AND SUPERCONDUCTIVITY 10 hrs.

Basic magnetic phenomena: paramagnetism, ferromagnetism, ferrimagnetism, anti-ferromagnetism;nano-magnetism; giant and colossal magnetoresistance; ferrofluids. Basic superconductivity phenomena; flux quantisationandJosephsoneffects.

UNIT V BASIC ATOMIC AND MOLECULAR PHYSICS 10 hrs.

Revision of the hydrogen atom, spectroscopic series. The helium atom and the exchange interaction. Manyelectron atoms, spin-orbit coupling, spectroscopic notation. Interaction of atoms with external fields and radiation -Stark and Zeeman Effects, selection rules, lasers. NMR and ESR. Molecular spectra -electronic, vibration and rotation.Bonding and anti- bonding orbitals.

TEXT BOOKS:1. PJ Goodhew, J Humphreys, R Beanland, "Electron Microscopy and Analysis", Taylor and Francis, London, 2001.2. E Meyer, HJ Hug, R Bennewitz, "Scanning probe Microscopy", Springer, Heidelberg, 2004. 3. K Tu, JW Mayer, LC Feldman, "Electronic Thin Film Science", Macmillan, New York, 1992. 4. Z Cui , "Mico-Nanofabrication", Higher Education press, Springer, 2005. 5. D. K. Schroder ,"Semiconductor Material and Device Characterization", John Wiley & Sons, New York, 1998.







SECX5053NANO SCALE PROCESSING AND

CHARACTERISATION FOR ADVANCED DEVICESL T P Credits Total Marks

3 0 0 3 100

UNIT I 10 hrs.Si processing methods; cleaning/etching, oxidation, gettering, doping, epitaxy. Sputtering, Chemical vapour

deposition (CVD), Plasma-enhanced CVD. Reactive ion etching (RIE). Moores Law; Design rules for CMOS at 90nm,45nm, 32nm and beyond; Semiconductor device roadmap; Silicon-on-insulator technology. Gate dielectrics, poly-Si,high-k dielectrics.

UNIT II 10 hrs.Thermal matching. Beyond CMOS – the material challenges of ultra-thin body (UTB) MOSFETs for sub-15nm

gate technologies. 3-D interconnect technologies. Moving to 450mm silicon substrate technologies. Top-down approachto nanolithography; immersion lithography, EUV photolithography, phase shifting masks, x-ray lithography includingplasma-x-ray sources, e-beam lithography, focused ion beams; photoresist technologies for the nanoscale; metrologyand defect inspection. Costing and yield. Assembly and packaging.

UNIT III 10 hrs.Processing III-V semiconductors including nitrides; molecular-beam epitaxy (MBE), chemical beam epitaxy (CBE),

metal-organic CVD (MOCVD), quantum wells. Si-Ge, SiC, Diamond: synthesis, defects and properties on the nanoscale.Micromixers and microcontactors for single phase and multiphase systems.Microreactors for catalytic, single phase,and multiphase reactions.Microseparation systems.

UNIT IV 10 hrs.Bottom-up approach. Chemical self-assembly. Spontaneous formation and ordering of nanostructures. Synthesis

and properties of nanoparticles, nano-clusters, nanotubes, nanowires and nanodots. Drexler-Smalley debate - realisticprojections.Nano-fluidics to build silicon devices with features comparable in size to DNA, proteins and other biologicalmolecules; Control and manipulation of microfluidic and nanofluidic processes for lab-on-a-chip devices. Role of surfacesin nanotechnology devices; surface reconstruction; dangling bonds and surface states.

UNIT V 10 hrs.UHV methods; UV and X-ray photoelectron spectroscopy (UPS, XPS); Auger electron pectroscopy (AES); low

energy electron diffraction and reflection high energy electron diffraction (LEED, RHEED) secondary ion massspectrometry (SIMS); Rutherford ackscattering (RBS); Medium energy ion scattering (MEIS); Electron energy lossspectroscopy (EELS) and highresolution EELS(HREELS).

TEXT BOOKS: 1. Edward Ramsden, "Hall Effect Sensors Theory and Applications", Elsevier, 2006. 2. Blood P. and Orton J., "The Electrical Characterization of Semiconductors: Majority Carriers and Electron States", Academicpress

London, 1992. 3. M De Crescenzi and Paincastelli MN, "Electron Spectroscopy and Related Spectroscopies", World Scientific, Singapore 1996.





SECX5054 ADVANCED NANOMATERIALSL T P Credits Total Marks

3 0 0 3 100

UNIT I 10 hrs.Fundamentals of magnetic materials, Dia, Para, Ferro, Antiferro, Ferri, Superpara magnetic materials AND giant

and colossal magneto-resistance.Important properties in relation to nanomagnetic materials.

UNIT II 10 hrs.Nanostructure Magnetism; Effect Bulk Nanostructuring of Magnetic property; Gaint and colossalMagnetic

resistance; Super Para Magnetism in metallic nanoparticle; Super para magnetism / FMin Semi-conduction quantumdots.

UNIT III 10 hrs.Carbon Nano Structures: Introduction; Fullerenes, C60, C80 and C240 Nanostructures; Properties& Applications

(mechanical, optical and electrical).

UNIT IV 10 hrs.Thermo Electric Materials (TEM): Concept of phonon, Thermal conductivity, Specific heat, Exothermic &

endothermic processes. Different types of TEM; Bulk TEM Properties. One dimensional TEM; Composite TEM;Applications.

UNIT V 10 hrs.Semiconductor nanoparticles – applications, Optical luminescence and fluorescence from direct band gap

semiconductor nanoparticles, surface-trap passivation in core-shell nanoparticles, carrier injection, polymer-nanoparticle,LED and solar cells, electroluminescence, barriers to nanoparticle lasers, doping nanoparticles, Mn-Zn-Se phosphors,light emission from indirect semiconductors, light emission form Si nanodots.

REFERENCE BOOKS: 1. Brian Cantor, "Novel Nanocrystalline Alloys and Magnetic Nanomaterials," Institute of Physics Publications, 2005. 2. S.Chikazumi and S.H. Charap," Physics of Magnetism", Springer-verlag berlin Heideberg, 2005. 3. E.W. Lee, "Magnetostriction and Magnetomechanical Effects", The Institute of Physics, 1955 4. Luis M.Liz-Marzan and V.Kamat ,"Nanoscale materials", Kluwer Academic Publishers, 2003. 5. Jahachi Satio, "Physical properties of Carbon Nanotube", Wiley-vch verlag, 2010. 6. S.Subramony & S.V. Rotkins, "Applied Physics Of Carbon Nanotubes : Fundamentals Of Theory, Optics And Transport Devices",

John Wiley & Sons Ltd, 2010. 7. Michael J. O’Connell, "Carbon Nanotubes: Properties and Applications", CRC/Taylor& Francis, 2006. 8. Liming Dai, "Carbon Nano Technology", Elsevier, 2006. 9. CNR Rao and A Govindaraj, " Nanotubes and Nanowires", The Royal Society of Chemistry, 2005.10. CR Rowe, "Handbook of Thermoelectrics", CRC Press, 1995.11. A. A. Balandin, K. L. Wang, " Handbook of Semiconductor Nanostructures and Nanodevices Vol 1-5", American Scientific Publishers,

2006. 12. Cao Guozhong, "Nanostructures and Nanomaterials - Synthesis, Properties and Applications", Imperial College Press, 2004.





SECX5055SEMICONDUCTORS NANOSTRUCTURE &

NANO-PARTICLEL T P Credits Total Marks

3 0 0 3 100

UNIT I 10 hrs.

Semiconductor nanoparticles Synthesis, Cluster compounds, quantum-dots from MBE and CVD,wet chemicalmethods, reverse micelles, electro-deposition, pyrolytic synthesis, self-assembly strategies.

UNIT II 10 hrs.

Semiconductor nanoparticles: size–dependant physical properties, Melting point, solid-state phase transformations,excitons, band-gap variations-quantum confinement, effect of strain on band-gap in epitaxial quantum dots, single particleconductance.

UNIT III 10 hrs.

Semiconductor nanoparticles – applications, Optical luminescence and fluorescence from direct band gapsemiconductor nanoparticles, surface-trap passivation in core-shell nanoparticles, carrier injection, polymer-nanoparticle,LED and solar cells, electroluminescence, barriers to nanoparticle lasers,doping nanoparticles, Mn-Zn-Se phosphors,light emission from indirect semiconductors, light emission form Si nanodots.

UNIT IV 10 hrs.

Semiconductor nanowires, Fabrication strategies, quantum conductance effects in semiconductor nanowires,porous Silicon, nanobelts, nanoribbons, nanosprings.

UNIT V 10 hrs.

Spintronics: Introduction, Overview, History & Background, Generation of Spin Polarization Theories of spinInjection, spin relaxation and spin dephasing, Spintronic devices and applications, spin filters, spin diodes, spintransistors.

REFERENCE BOOKS: 1. Hari Singh Nalwa, "Encyclopedia of Nanotechnology", American Scientific Publishers, 2004. 2. Bharat Bhusan, "Springer Handbook of Nanotechnology", Springer Science media Inc, 2004. 3. A. A. Balandin, K. L. Wang, "Handbook of Semiconductor Nanostructures and Nanodevices Vol 1-5", American Scientific Publishers,

2006. 4. Cao Guozhong, "Nanostructures and Nanomaterials - Synthesis, Properties and Applications", Imperial College Press, 2004. 5. Sadamichi Maekawa, "Concepts in Spintronics", Oxford University Press, 2006.







SECX5056 NANO AND MICROMATERIALSL T P Credits Total Marks

3 0 0 3 100

UNIT I NANOMETER-SCALE STRUCTURE FORMATION ON SOLID SURFACES 10 hrs.

Introduction- Atomic Layer Etching Processes on Silicon Surfaces- Nanoscale Fabrication Processes of SiliconSurfaces with Halogens- Self-Organized Nanopattern Formation on Copper Surfaces.Ultrafast Laser SpectroscopyApplicableto Nano-and Micromaterials:-Introduction-Femtosecond Optical Kerr Gate Luminescence Spectroscopy-Femtosecond Transient Grating Spectroscopy Combined with a Phase Mask-Femtosecond Real-Time Pump-ProbeImaging Spectroscopy

UNIT II DEFECTS IN ANATASE TITANIUM DIOXIDE 10 hrs.

Introduction - Growth of Anatase Single Crystal-Control of Defect States- Properties of Anatase- Carrier Controlby Photoirradiation. Organic Radical-Trithia-Triazapentalenyl(TTTA) as Strongly Correlated Electronic Systems:Experimentand Theory:-Introduction- Crystalline Structure- Experimental- Electronic Structure Calculations.Ab Initio GW CalculationsUsing an All-Electron Approach:-Introduction- Many-Body Perturbation Theory and GW Approximation- Choice ofBasis-Set Function-Application to Clusters and Molecules- Self-Consistent GW vs. First Iterative GW (G0W0).

UNIT III PARTICLE EXCITED STATES OF ATOMS AND MOLECULES USING T-MATRIX THEORY10 hrs.

Background- Methodology: T -Matrix Theory- Double Electron Affinity of Alkali-Metal Clusters-Double IonizationEnergy Spectra-Two-Electron Distribution Functions and Short-Range Electron Correlations.Green’s Function Formulationof Electronic Transport at Nanoscale:-Introduction- Landauer’s Transport Formalism: The Green’s FunctionImplementation-Carbon Nanotube Heterostructures-Functional Molecule Between Two Metallic Contacts

UNIT IV SELF-ASSEMBLED QUANTUM DOT STRUCTURE COMPOSED OF III–V COMPOUND SEMICONDUCTORS 10 hrs.

Introduction- Control of QD Structure by Growth Condition- Growth Process of QD Structure -Analysis of QDStructure. Potential-Tailored Quantum Wells for High- Performance Optical Modulators/Switches:- Introduction -Parabolic Potential Quantum Well-Graded - Gap Quantum Well - Asymmetric Coupled Quantum Well - IntermixingQuantum Well.Thermodynamic Properties of Materials Using Lattice - Gas Models with Renormalized Potentials:-Introduction - Scheme of the Potential Renormalization - Application of the Potential Renormalization

UNIT V OPTICALLY DRIVEN MICROMACHINES FOR BIOCHIP APPLICATION 10 hrs.

Introduction-Optically Driven Micromachines- Conclusion and Future Prospect References. Study of ComplexPlasmas:- Overview of Complex Plasma Research-Charging of a Dust Particle in a Plasma - Measurements of theCharge of Dust Particles Levitating in Electron Beam Plasma-Various Approaches to Plasma - Aided Design ofMicroparticles System in Ion Flow-Simulation Study of Cluster Design of Charged Dust Particles- Complex PlasmaExperiment in Cryogenic Environment.

TEXT BOOKS: 1. Dr.Kaoru ohno,Dr,Masatoshi Tanaka, Jun Takeda, "Nano-and Micromaterials", Springer Berlin Heidelberg, 2008. 2. Gc.Shi, "Multiscaling in molecular and continuum mechanics: interaction of time and size from macro to nano", Springer, 2007. 3. Takafumi, Soon ku fong, "Advances in Material Research,Oxide and Nitride Semiconductors, Processing properties and applications",

Springer, 2009.







SECX5057 METALLOPOLYMER NANOCOMPOSITESL T P Credits Total Marks

3 0 0 3 100

UNIT I NANOPARTICLES IN MATERIALS CHEMISTRY AND IN THE NATURAL SCIENCES 10 hrs.Classification of Nanoparticles by Size-Structural Organization of Nanoparticles-Dimensional Phenomena in the

Chemistry and Physics of Nanoparticles -Nanoparticles and Materials on their Base Characteristic Features ofNanoparticle Nucleation- Kinetic Features of New Phase Formation- Phase Formation in Chemical Reactions-Self-Organization of Metal-Containing Nanoparticles (Fractal Structures)- Brief Account of Major Production Methods ofMetal-Containing Nanoparticles - Metal Clusters as Nanoparticles-with Fixed Dimensions

UNIT II PRINCIPLES AND MECHANISMS OF NANOPARTICLE STABILIZATION BY POLYMERS 10 hrs.Stability of Nanoparticles in Solutions - Stabilizing Capability Characteristics of Polymers -Characteristics of

Polymer Absorption on Metal Surfaces Specifics of Polymer Surfactants as Stabilizers-Mechanism of NanoparticleStabilization by Polymers-Stabilization of Nanoparticles by Electrolytes- Surface Proofing as a Method of StabilizingNanoparticles by Polymers On the Problem of Matrix Confinement

UNIT III SYNTHETIC METHODS FOR METALLOPOLYMER 10 hrs. Nanocomposite Preparation 4 Physical Methods of Incorporating Nanoparticles into Polymers Mechanochemical

Dispersion of Precursors Jointly with Polymers Microencapsulation of Nanoparticles into Polymers-Physical Depositionof Metal Particles on Polymers-Formation of 2D Nanostructures on Polymers- Formation of Metal Nanoparticles inPolymer Matrix Voids (Pores)- Physical Modification and Filling of Polymers with Metal Reduction of Polymer-BoundMetal Complexes-Nanocomposite Formation by Metal-Containing Precursor Thermolysis- Nanocomposite Formation inMonomer–Polymer Mixtures in Thermolysis- Nanocomposites on the Base of Polymer-Immobilized Metalloclusters

UNIT IV PHYSICO-CHEMICAL METHODS OF METAL-POLYMER NANOCOMPOSITE PRODUCTION10 hrs.Cryochemical Methods of Atomic Metal Deposition on Polymers- Metal Evaporation Methods on Polymers

Localized at Room Temperature-Synthesis of Nanocomposites in a Plasma-Chemical Process- Radiolysis in PolymerSolutions- Photolysis of Metal-Polymer Systems as Means of Obtaining Nanocomposites-Electrochemical Methods ofNanocomposite Formation General Characteristics of Sol–Gel Reactions - A Combination of Polymerization Reactionsand In Situ Sol–Gel Synthesis of Nanocomposites- Sol–Gel Syntheses in the Presence of Polymers- Morphology andFractal Model of Hybrid Nanocomposites- Nanocomposites Incorporating Multimetallic Ceramics. A General Descriptionof the Intercalation Process- Polymerization into the Basal (Interlayer) Space- The Macromolecules Introduction intothe Layered Host Lattices- Intercalation Nanocomposites of Polymer/Metal Chalcogenide Type- Langmuir–BlodgettMetallopolymer Films as Self-Organized Hybrid Nanocomposites

UNIT V NANOBIOCOMPOSITES 10 hrs.Basic Notions of Metal-Containing Protein Systems- Metal Nanoparticles in Immunochemistry, Cytochemistry and

Medicine- Biosorption, Selective Heterocoagulation and Bacterial Concentration of Metal Nanoparticles- Sol–Gel Processas a Way of Template-Synthesized Nanobioceramics-Biomineralization and Bioinorganic Nanocomposites The Controlof Physico-Mechanical Properties of Nanocomposites- The Peculiarity of Nanocomposites, Synthesized by Sol–GelMethods-Polyolefin-Based Nanocomposites- Polymer Matrix Structurization in Nanocomposites-The Physical andMechanical Properties of Metallopolymer Nanocomposites- Nanocomposites in Adhesion Compounds (Contacts) andTribopolymers -New Trends in Material Science Connected with Metallopolymeric Nanocomposites.

TEXT BOOK:1. Anatolii D. Pomogailo , "MetallopolymerNanocomposites", Springer Berlin Heidelberg New York, 2005.

REFERENCE BOOKS:1. C F.Candau, R.H.Ottewill, “An introduction to polymer Colloids", Kluwer, 1990.2. A.D. Pomogailo, V.S.Savost’yanov, "Synthesis and Polymerization of metalcontaining monomers", CRC Press, 1994.




SECX5058OPTICAL PROPERTIES OF

NANOMATERIALS, NANOPHOTONICS ANDAPPLICATIONS


3 0 0 3 100

UNIT I METAL NANOPARTICLES 10 hrs.

Metal Nanoparticles, Alloy Nanoparticles, Stabilization in Sol, Glass, and other media, Change of bandgap,Blueshift, Colour change in sol, glass, and composites, Plasmon Resonance.

UNIT II SEMICONDUCTOR NANOPARTICLES – APPLICATIONS 10 hrs.

Optical luminescence and fluorescence from direct, bandgap semiconductor nanoparticles, surface-trap passivationin core-shell nanoparticles, carrier injection, polymer-nanoparticle LED’s and solar cells, electroluminescence; barriersto nanoparticle lasers; doping nanoparticles, Mn-ZnSe phosphors; light emission from indirect semiconductors, lightemission from Si nanodots.

UNIT III PHYSICS OF LINEAR PHOTONIC CRYSTALS 10 hrs.

Maxwell’s Equations, Bloch’s Theorem, Photonic Band Gap and Localized Defect States, Transmission Spectra,Nonlinear Optics in Linear Photonic Crystals, Guided Modes in Photonic Crystals Slab

UNIT IV PHYSICS OF NONLINEAR PHOTONIC CRYSTALS 10 hrs.

1-D Quasi Phase Matching, Nonlinear Photonic Crystal Analysis, Applications of Nonlinear Photonic CrystalsDevices, Materials: LiNbO3, Chalcogenide Glasses, etc, Wavelength Converters, etc

UNIT V ELEMENTS OF PLASMONICS 10 hrs.

Introduction: Plasmonics, merging photonics and electronics at nanoscale dimensions, single photon transistorusing surface plasmon, nanowire surface plasmons-interaction with matter, single emitter as saturable mirror, photoncorrelation, and integrated systems. All optical modulation by plasmonic excitation of quantum dots, Channelplasmon-polariton guiding by subwavelength metal grooves, Near-field photonics: surface plasmon polaritons andlocalized surface plasmons, Slow guided surface plasmons at telecom frequencies.

REFERENCE BOOKS:1. Bharat Bhushan, " Springer Handbook of Nanotechnology", Springer-Verlag: Heidelber, Germany, 2004.2. Hari Singh Nalwa , "Encyclopedia of Nanotechnology", American Scientific Publishers, 2004.3. Mool Chand Gupta, John Ballato, "The Handbook of Photonics ",Taylor & Francis, 2006.4. S. Kawata & H. Masuhara, " Nanoplasmonics, From fundamentals to Applications vol 1 & 2. Elsevier, 2006.







SECX5059 CARBON NANOTUBE ELECTRONICS AND DEVICEL T P Credits Total Marks

3 0 0 3 100

UNIT I BASICS OF CARBON NANO TUBES 10 hrs.Carbon materials – Allotropes of carbon - Structure of Carbon Nanotubes - types of CNTs- – Electronic properties

of CNTs- Band structure of Graphene –Band structure of SWNT from grapbene - electron transport properties ofSWNTs – Scatterings in SWNTs – Carrier mobility in SWNTs.

UNIT II SYNTHESIS AND INTEGRATION OF SWNT DEVICES 10 hrs.Introduction- CVD Synthesis - Method - Direct Incorporation with Device Fabrication Process - SWNT Synthesis

on Metal Electrodes- Lowering the Synthesis Temperature- Controlling the SWNT Growth- Location, Orientation, Chirality-Narrowing Diameter Distributions-Chirality Distribution Analysis for Different CVD Processes - Selective Removal of theMetallic Nanotubes in FET Devices - Integration

UNIT III CARBON NANOTUBE FIELD-EFFECT TRANSISTORS 10 hrs.Schottky Barrier Heights of Metal S/D Contacts- High-k Gate Dielectric Integration- Quantum Capacitance-

Chemical Doping- Hysteresis and Device Passivation- Near Ideal, Metal-Contacted MOSFETs- SWNT MOSFETs- SWNTband to band tunneling FETs.

UNIT IV AC RESPONSE AND DEVICE SIMULATION OF SWNT FETs 10 hrs.Assessing the AC Response of Top Gated SWNT FETs- Power Measurement Using a Spectrum Analyzer -

Homodyne Detection Using SWNT FETs - RF Characterization Using a Two Tone Measurement - AC Gain from aSWNT FET Common Source Amplifier - Device Simulation of SWNT FETs – SWNT FET Simulation Using NEGFApproach - Device Characteristics at the Ballistic Limit- Role of Phonon Scattering – High Frequency PerformanceLimits - Optoelectronic Phenomena

UNIT V CARBON NANOTUBE DEVICE MODELING AND CIRCUIT SIMULATION 10 hrs.Schottky Barrier SWNT-FET Modeling- Compact Model for Circuit Simulation- Model of the Intrinsic SWNT

Channel Region- The Full SWNT-FET Model- Applications of the SWNT-FET Compact Model - Performance Modelingfor Carbon Nanotube Interconnects- Circuit Models for SWNTs - Circuit Models for SWNT Bundles- Circuit Models forMWNTs - Carbon Nanotube Interconnects – Applications.

REFERENCE BOOKS: 1. Ali Javey, Jing Kong, "Carbon Nanotube Electronics", Springer Science media, 2009. 2. Michael J. O’Connell, "Carbon Nanotubes: Properties and Applications", CRC/Taylor& Francis, 2006. 3. François Léonard, "The Physics of Carbon Nanotube Devices", William Andrew Inc, 2009. 4. R.Saito, Gdresseleiaus & M S Drbselmus, "Physical Properties of Carbon Nanotubes", Imperial college press, 1998.





SECX5060MODELING TOOLS AND TECHNIQUES FOR

NANOTECHNOLOGY APPLICATIONSL T P Credits Total Marks

3 0 0 3 100

UNIT I MATHEMATICAL TOOlS 10 hrs.On Deterministic Fractional Models - Stability Analysis of Linear Discrete-Time Fractional-Order Systems- Stability

of Fractional-Delay Systems- Comparing Numerical Methods for Solving Nonlinear Fractional Order DifferentialEquations- Fractional-Order Backward-Difference Definition Formula Analysis- Fractional Differential Equations onAlgebroids and Fractional Algebroids-Generalized Hankel Transform and Fractional Integrals on the Spaces ofGeneralized Functions-Fractional Derivatives with Fuzzy Exponent- Synchronization Analysis of Two Networks

UNIT II FRACTIONAL MODELLING 10 hrs.Modeling Ultracapacitors as Fractional-Order Systems- IPMC Actuators Non Integer Order Models - Limited

Frequency Band Integrator and Application to Energetic Material Ignition Prediction - Fractional Order Model of BeamHeating Process and Its Experimental Verification- Analytical Design Method for Fractional Order Controller UsingFractional Reference Model- Chaotic Fractional Order Delayed Cellular Neural Network- Fractional Wavelet Transformfor the Quantitative Spectral Analysis of Two-Component System.

UNIT III FRACTIONAL CONTROL SYSTEMS 10 hrs.Stability Analysis of Fractional Order Universal Adaptive Stabilization- Position and Velocity Control of a Servo

by Using GPC of Arbitrary Real Order- Fractional Order Adaptive Control for Cogging Effect Compensation- GeneralizedPredictive Control of Arbitrary Real Order- Resonance and Stability Conditions for Fractional Transfer Functions of theSecond Kind- Fractional Control Strategy for Four-Wheel-Steering Vehicle- Fractional Order Sliding Mode ControllerDesign for Fractional Order Dynamic Systems- Nyquist Envelope of Fractional Order Transfer Functions with ParametricUncertainty

UNIT IV NEW TRENDS IN NANOTECHNOLOGY 10 hrs.Novel Molecular Diodes Developed by Chemical Conjugation of Carbon Nanotubes with Peptide Nucleic Acid -

Hybrid SingleWalled Carbon Nanotube FETs for High Fidelity DNA Detection - Integrated Nanoelectronic and PhotonicDevices - New Noninvasive Methods for ‘Reading’ of Random Sequences and Their Applications in Nanotechnology -Quantum Confinement in Nanometric Structures.

UNIT V TECHNIQUES AND APPLICATIONS 10 hrs.Air-Fuel Ratio Control of an Internal Combustion Engine Using CRONE Control Extended to LPV Systems- Non

Integer Order Operators Implementation via Switched Capacitors Technology- Fractional Dynamics of an Ultracapacitorand Its Application to a Buck-Boost Converter- Approximation of a Fractance by a Network of Four Identical RC CellsArranged in Gamma and a Purely Capacitive Cell.

TEXT BOOKS: 1. D. Baleanu, Z.B.Guvenc J.A. Tenreiro Machado,"New Trends in Nanotechnology and Fractional Calculus Applications", Springer

Science media, 2010. 2. Challa S. S. R. Kumar, Josef Hormes, Carola Leuschner, "Nanofabrication towards biomedical applications: Techniques and Tools",

Wiley- VCH, 2004. 3. Mark Ratner, Daniel Ratner, "Nanotechnology: A gentle introduction to the next big idea", First edition, Prentice Hall Press, 2002.





SECX5061 NANO PHOTONIC MATERIALSL T P Credits Total Marks

3 0 0 3 100

UNIT I PROPERTIES OF PHOTONIC CRYSTALS 10 hrs.Linear and Non-linear Properties of Photonic Crystals - Solitary Wave Formation in One-dimensional Photonic

Crystals-Variational Approach to the NLCME-Radiation Losses-Microscopic Analysis of the Optical and ElectronicProperties of Semiconductor Photonic Crystal Structures-Spatially-Inhomogeneous Maxwell Equations in SemiconductorPhotonic-Crystal-Semiconductor Bloch Equations in Real Space Structures.

UNIT II FUNCTIONAL 3D PHOTONIC FILMS FROM POLYMER BEADS 10 hrs.Opals as Coloring Agents-Increase of Refractive Index-Inert Replica for Chemistry and Catalysis at High

Temperatures-Patterning of the Opal -Patterning of an Infiltrated Material-Chemistry in Defect Layers-Bloch Modes andGroup Velocity Delay in Coupled Resonator-Coherent Cavity Field Coupling in One-Dimensional CROWs-Mode Structurein Finite CROWs-Disorder and Detuning in CROWs.

UNIT III COUPLED NANOPILLAR WAVEGUIDES 10 hrs.Dispersion Tuning-Coupled Mode Model-Transmission Efficiency-Aperiodic Nanopillar Waveguides- Applications-

Directional Coupler- Laser Resonators-Ultra-low Refractive Index Mesoporous Substratesfor Waveguide Structures-Fabrication of Mesoporous Silica Films- Polymer Waveguides-PZT Films.

UNIT IV LINEAR AND NONLINEAR PHOTONIC CRYSTALS 10 hrs.Light Propagation in Nonlinear Photonic Crystals- An Optical Parametric Oscillator in a Photonic Crystal

Microcavity-Discrete Solitons in Coupled Defects in Photonic Crystals- Fabrication of 2D Photonic Crystals- Fabricationof Trenches and More Complex Geometries- Defects in 2D Macroporous Silicon Photonic Crystals.

UNIT V PLASMONIC AND METAMATERIALS 10 hrs.Optical Properties of Photonic/Plasmonic Structures in Nanocomposite Glass-Calculation of Effective

Permittivity-Metamaterials with Different Unit Cells-Numerical Simulation of Meander Structures.

TEXT BOOK: 1. Wehrspohn R.B., Kitzerow H.S., and Busch K., "Nanophotonic Materials", Wiley-VCH,2008

REFERENCE BOOKS: 1. Caloz, C .and Itoh,T, "Electromagnetic Metamaterials. Transmission Line Theory and MicrowaveApplications", JohnWiley & Sons,

Inc., 2006. 2. Collin, R.E . Field Theory of Guided Waves", IEEE Press, Oxford University Press, 1991. 3. Joannopoulos, J.D., Meade, R.D. and Winn, J.N. ,“ Photonic Crystals:Molding the Flow of Light", Princeton University Press, 1995.





SECX5062 NANO SCALE INTEGRATED COMPUTINGL T P Credits Total Marks

3 0 0 3 100

UNIT I AN INTRODUCTION TO NANOCOMPUTING 10 hrs.The Micro computing Era - The Transistor as a Switch, Difficulties with Transistors at the Nanometer Scale -

Nanoscale Devices- Molecular Devices- Nano Tubes – Quantum Dots – Wave Computing – Quantum Computing.

UNIT II QUANTUM COMPUTING 10 hrs.Reversible Computations- Quantum Computing Models-Complexity Bounds For Quantum Computing-Quantum

Compression-Quantum Error Correcting Codes-Quantum Cryptography-computing with quantum dot Cellularautomata-The Quantum dot Cellular automata Cell- Ground State Computing- Clocking- QCA Addition- QCAMultiplication- QCA memory- 4-bit Processor.

UNIT III SPIN-WAVE ARCHITECTURES 10 hrs.Spin Wave Crossbar- Spin Wave Reconfigurable Mesh- Spin Wave Fully Interconnected Cluster- Multi scale

Hierarchical Architecture- Spin Wave-Based Logic Devices- Logic Functionality- parallel computing with Spin waves:Parallel Algorithm Design Techniques- Parallel Routing and Broadcasting- On Spin-Wave Crossbar- On Spin-WaveReconfigurable Mesh- On Spin-Wave Fully Interconnected Cluster.

UNIT IV MOLECULAR COMPUTING 10 hrs.Switching and Memory in Molecular Bundles- Molecular Bundle Switches- Circuit and Architectures in Molecular

Computing- Molecular Grafting For Silicon Computing- Molecular Grafting on Intrinsic Silicon Nanowires- Self-AssemblyOf Carbon Nanotubes (Cnts).

UNIT V COMPUTATIONAL TASKS IN MEDICAL NANOROBOTICS 10 hrs.Medical Nanorobot Designs- Microbivores- Clottocytes- Chromallocytes- Common Functions Requiring Onboard

Computation- Nanorobot Control Protocols: Operational Protocols- Biocompatibility Protocols- Theater Protocols-Nanoscale image Processing: Labeling Problem- Convex Hull Problem- the Nearest Neighbor Problem.

TEXT BOOK: 1. Mary Mehrnoosh Eshaghian-Wilner , "Bio inspired and Nano Scale Integrated Computing", John Wiley and Sons,2009.

REFERENCE BOOKS: 1. Nielsen M.A. and Isaac L. Chuang, "Quantum Computation and Quantum Information", Cambridge University Press, 2000. 2. Jain A.K., "Fundamentals of Digital Image Processing", Prentice-Hall, 1988. 3. Schroder D.K, " Semiconductor Material and Device Characterization", New York: Wiley, 2006. 4. Zhou C., New Haven, "Atomic and Molecular Wires", Yale University Press, 1999.





SECX5063 NANO PHOTO ELECTROCHEMICAL SYSTEMSL T P Credits Total Marks

3 0 0 3 100

UNIT I FUNDAMENTALS TO PHOTO ELECTROCHEMISTRY 10 hrs.Organic solar cells – Dye sensitized solar cells – Regenerative solar cells – Photo physics of semiconductors

and semiconductor particles – Carrier relaxation (55)- Charge transfer at the semiconductor electrolyte interface,Conversion of solar energy

UNIT II FUNDAMENTALS AND APPLICATIONS OF QUANTUM CONFINED STRUCTURES 10 hrs.Quantisation effects in semiconductors for nanostructures – Optical spectroscopy of quantum wells, super lattices

and quantum dots - Hot electron and hole cooling dynamics in quantum confined semiconductors – High conversionefficiency via multiple exciton generation in quantum dots – Quantum dot solar cell configurations.

UNIT III FUNDAMENTALS AND APPLICATIONS IN ELECTRON TRANSFER REACTIONS 10 hrs.Thermodynamics of ET and PET reactions – Classical Marcus theory – Semiclassical theories of nonadiabatic

electron transfer – Electron transfer in donor-bridge-acceptor supermolecules – Electrochemical electron transfer – Ratecontrol by reorganisation dynamics - Optimisation of photoinduced electron transfer in photoconversion.

UNIT IV FUNDAMENTALS IN METAL OXIDE HETEROGENEOUS PHOTOCATALYSIS 10 hrs.The complex science underlying metal oxide photocatalysis – Metal oxide photochemistry, photophysics and

modeling – Challenges in heterogeneous photocatalysis – Theoritical description of quantum yields – Evidence for agas/solid surface reaction being photocatalytic.

UNIT V MESOSCOPIC SOLAR CELLS AND PHOTOELECTROCHEMICAL STORAGE CELLS 10 hrs.Mode of function of dye-sensitised solar cells – DSSC research and development – Solid state dye-sensitised

cells – Pilot production of modules, outdoor field tests and commercial DSSC development - Comparative solar energystorage process – Modes of photoelectrochemical storage – Optimisation of photoelectrochemical storage – Highefficiency multiple bandgap cells with storage.

TEXT BOOK: 1. Mary D.Archer, Arthur J Nozik , "Nanostructured and Photoelectrochemical Systems for Solar Photon Conversion ",Imperial College

Press: London, 2008

REFERENCE BOOKS: 1. Vayssieres, Lionel , "On Solar Hydrogen and Nanotechnology", John Wiley and Science, 2009. 2. Allen J. Bard, Larry R. Faulkner, "Electrochemical Methods: Fundamentals and Applications", John Wiley and Sons, 1980. 3. E. Pelizzetti, "Homogeneous and Heterogeneous Photocatalysis", Kluwer Academic Publishers, 1986. 4. David H. Volman, Douglas C. Neckers and Gunther Von Bunau, "Advances in Photochemistry," John Wiley & Sons, 1997.





SPHX5001CONDENSED MATTER PHYSICS(Common to NanoTech, Appl. Elec.)


3 0 0 3 100

UNIT I 10 hrs.

Crystal binding: Force between atoms-cohesive energy-calculation of cohesive energy bonding in solids-iconic,covalent, metallic, molecular-hydrogen bonded crystals-binding energy of ionic crystals-Madelung constant-Born HeberCycle.

UNIT II 10 hrs.

Lattice dynamics: Reciprocal space: Brolliouin Zones-vibration modes of mono of mono and diatomiclattices-quantization of lattice vibration-phonon momentum-scattering of neurons by phonons-neutron diffraction.

UNIT III 10 hrs.

Condensed matter under High pressure :

Elastic constants –Measurements –Mechanical properties –Tension and compression –Fatigue – creep-Hydrostaticextrution, material synthesis –super hard materials –Diamond –oxides and other compounds –Water jet.

UNIT IV 10 hrs.

Optical Properties: Index of refraction-damping constant –characteristic penetration depth-absorbance-reflectivityand transmissivity-point defect-color centers-luminescence-exciton-polaron-interband-intra band transitions-dispersionrelation.

UNIT V 10 hrs.

Atomic molecular structure: Central field approximation-Thomas Fermi model and its application-Hartree andHartree Fock equations –hydrogen molecules-Heitler London model-LCAO-Hybridization.

TEXT BOOK: 1. Michael P. Marder , "Condensed Matter Physics", Wiley-VCH, 2000.

REFERENCE BOOKS: 1. Kittel C., "Introduction to solid stae physics", 7th, Edn, Wiley Eastern, 1996. 2. Chandra A.K., "Quantum Chemistry", Prentice Hall, 1990. 3. Hummel R.E., "Electronic properties of materials", Narosa Publishing House, 1993. 4. Raimes S., "The wave mechanics of electrons in metals", North Holland Publishing Company, 1967.



Part A: 6 Questions of 5 marks each - No choice 30 marks




SECX5024VLSI SIGNAL PROCESSING


3 0 0 3 100

UNIT I 10 hrs.Introduction to DSP systems –Typical DSP algorithms, DSP application demands – representation of DSP

algorithms – Iteration bound – data flow graph representation, loop bound and iteration bound, Algorithms for computingIteration bound, Iteration bound of multi rate data flow graphs- pipelining and parallel processing – pipelining of FIRdigital filter, parallel processing, pipelining and parallel processing for low power.

UNIT II 10 hrs.Retiming – definition and properties, solving systems of inequalities, Re timing techniques – Unfolding –Properties

and algorithm for unfolding, critical path and applications of unfolding – folding transformation, register minimizationtechnique, register minimization in folded architectures folding of multi rate systems.

UNIT III 10 hrs.Systolic architecture design – methodology, FIR systolic array, selection of scheduling vector, matrix to matrix

multiplication, 2D systolic array design, systolic design for space representation containing delays – fast convolutionalgorithms – Algorithmic strength reduction in filters and transforms.

UNIT IV 10 hrs.Pipelined and parallel recursive and adaptive filters – scaling and round off noise – round off noise in pipe

lined FIR filters, lattice filters, slow down, re timing and pipelining – Digital lattice filter structure – schur algorithm,basic digital lattice filter, derivation of one multiplier lattice filter, normalized lattice filter, pipe lining of lattice filters,low pass CMOS lattice IIR filter, bit level arithmetic architectures – redundant arithmetic

UNIT V 10 hrs.Numeric strength reduction – synchronous, wave and asynchronous pipe lines – low power design –

programmable digital signal processors.

TEXT BOOK:1. Keshab K.Parthi, "VLSI Digital Signal Processing systems" , Design and implementation", Wiley- Inter Science , 1999

REFERENCE BOOKS: 1. Mohammed Isamail and Terri fiez, "Analog VLSI Signal and information processing", Mc Graw-Hill, 1994. 2. Kung S.Y., White House H.J., T.Kailath, "VLSI and Modern Signal Processing", Prentice Hall, 1985. 3. Jose E.France, Yannis Tsvidis, " Design of Analog - Digital VLSI Circutis and Signal Processing." Prentice Hall, 1994.


Max. Marks: 80 Exam Duration : 3 hrs.Part A: 6 Questions of 5 marks each – No choice 30 marksPart B: 2 Questions from each unit of internal choice, each carrying 10 marks. 50 marks



SECX5020VLSI TECHNOLOGY


3 0 0 3 100

UNIT I CRYSTAL GROWTH, WAFER PREPARATION, EPITARY AND OXIDATION. 10 hrs.Electronic grade silicon – Basic steps in IC fabrication-crystal plane and orientation – Defects in the lattice –

Czochralski crystal growing – silicon shaping – Processing consideration – Vapour phase epitaxy –Liquid phaseepitaxy-selective epitaxy- Molecular beam epitaxy - Epitaxial Evaluation – Growth mechanism and kinetics – Thinoxides – Oxidation Techniques and systems – oxide properties – redistribution of dopants at interface – oxidation ofpolysilicon – Oxidation induced effects.

UNIT II LITHOGRAPHY AND RELATIVE PLASMA ETCHING. 10 hrs.Mask Making – Optical lithography – Electron lithography – X-ray lithography – Ion lithography. – Plasma

properties – Feature size control and Anisotropie Etch mechanism – Lift off Techniques – Plasma reactor – Fl2 &Cl2based etching – Relative plasma etching Techniques and Equipments.

UNIT III DEPOSITION, DIFFUSION , ION IMPLANTATION AND METALIZATION. 10 hrs.Deposition process – polisilicon - plasma assisted deposition – models of diffusion in solids – Fick’s one

dimensional diffusion equation – Atomic diffusion mechanism – measurement techniques – Range theory – Carrierrecovery due to annealing - Implantation equipment – Annealing Shalloe junction – high energy implantation – Physicalvapour deposition – patterning.

UNIT IV METALLIZATION 10 hrs.Metallization applications – metallization choices – Patterning – Metallization problems – New role of metallization-

metallization systems – sputtering – problems associated with Al – Cu interconnect – Comparison of RC delay ofPolysilicon, Al.

UNIT V ANALYTICAL, ASSEMBLY TECHNIQUES & PACKAGING OF VLSI DEVICES 10 hrs.Analytical beams – Beams specimen interaction – Chemical methods – package types – baking design

considerations – VLSI assembly technology – Package Fabrication Technology.

TEXT BOOK:1. S.M.Sze "VLSI Technology ", Mc.Graw Hill 2nd Edition, International Edition 1998.

REFERENCE BOOKS: 1. Sorab. K. Gandhi, "VLSI Fabrication and Principles", McGraw Hill, 2005. 2. Amar Mukherjee, "Introduction to NMOS & CMOS VLSI system Design", Prentice Hall, USA, 1986. 3. Mccanny and J.C.White, "VLSI Technology and design", Tata Mc Graw Hill, 2002. 4. Dasgupta, " VLSI Technology ", Pearson Education, 2001.





SECX5051RF MEMS AND ITS APPLICATIONS

(Common to VLSI, NanoTech, Appl.Elec.)L T P Credits Total Marks

3 0 0 3 100

UNIT I INTRODUCTION 10 hrs.MEMS-Microfabrications for MEMS -Surface micromachining of silicon -Wafer bonding for MEMS-LIGA process-Micromachining of

polymeric MEMS devices -Three-dimensional microfabrications.Transducers: Electromechanical transducers-Piezoelectric transducers -Electrostrictive transducers -Magnetostrictive transducers -Electrostatic actuators- Electromagnetic transducers -Electrodynamic transducers-Actuators: Electrothermal actuators-Comparison of electromechanical actuation schemes.

UNIT II MICRO SENSING FOR MEMS 10 hrs.Piezoresistive sensing - Capacitive sensing - Piezoelectric sensing - Resonant sensing - Surface acoustic wave sensors.

Materials: Materials for MEMS - Metal and metal alloys for MEMS - Polymers for MEMS - Other materials for MEMS.Metals:Evaporation –Sputtering. Semiconductors :Electrical and chemical properties-Growth and deposition.Thin films for MEMS and theirdeposition techniques -Oxide film formation by thermal --oxidation -Deposition of silicon dioxide and silicon nitride -Polysilicon filmdeposition -Ferroelectric thin films. Materials for polymer MEMS: Classification of polymers -UV radiation curing -SU-8 for polymerMEMS.

UNIT III MICRO MACHINING AND LITHOGRAPHY 10 hrs.Micromachning : Bulk micromachining for silicon-based MEMS -Isotropic and orientation-dependent wet etching - Dry etching -

Buried oxide process -Silicon fusion bonding -Anodic bonding -Silicon surface micromachining Sacrificial layer technology - Materialsystems in sacrificial layer technology - Surface micromachining using plasma etching -Combined integrated-circuit technology andanisotropic wet etching .Lithography : Microstereolithography for polymer MEMS -Scanning method -Two-photonmicrostereolithography Surface micromachining of polymer MEMS -Projection method -Polymeric MEMS architecture with silicon,metal and ceramics -Microstereolithography integrated with thick film lithography.

UNIT IV MEMS INDUCTORS AND CAPACITORS 10 hrs.Introduction- MEMS/micromachined passive elements: pros and cons. MEMS inductors : Self-inductance and mutual

inductance - Micromachined inductors - Effect of inductor layout - Reduction of stray capacitance of planar inductors-Approachesfor improving the quality factor Folded inductors - Modeling and design issues of planar inductors - Variable inductors – Polymerbased inductors.MEMS capacitors: MEMS gap-tuning capacitors - MEMS area-tuning capacitors - Dielectric tunable capacitors.Micromachined antennae : Introduction - Overview of microstrip antennae- Basic characteristics of microstripeantennae - Designparameters of microstrip antennae - Micromachining techniques to improve antenna performance - Micromachining as a fabricationprocess for small antennae - Micromachined reconfigurable antennae.

UNIT V APPLICATIONS 10 hrs.Switching: Introduction- Switch parameters- Basics of switching - Mechanical switches-Electronic switches- Switches for RF

and microwave applications - Mechanical RF switches - PIN diode RF switches - Metal oxide semiconductor field effect transistorsand monolithic microwave integrated circuits. RF MEMS switches : Integration and biasing issues for RF switches -Actuationmechanisms for MEMS devices-Electrostatic switching - Approaches for low-actuation-voltage switches - Mercury contact switches -Magnetic switching - Electromagnetic switching - Thermal switching.Dynamics of the switch operation : Switching time and dynamicresponse - Threshold voltage. MEMS switch design, modeling and evaluationy:Electromechanical finite element analysis - RFdesign - MEMS switch design considerations.

TEXT BOOK: 1. Vijay K.Varadan, K.J.Vinoy and K.A.Jose, "RF MEMS and Their Applications (ISBN 0-470-84308-X)", 1st edition, John Wiley &

Sons Ltd., West Sussex, England, 2003.

REFERENCE BOOKS: 1. P. Rai-choudhury, "MEMS and MOEMS Technology and Applications", 1st Edition, PHI, 2009. 2. S. Senturia, "Microsystem Design", Kluwer Academic Publishers, 2001. 3. J.W. Gardner, V.K. Varadan, O.O. Awadelkarim, "Microsensors, MEMS & Smart Devices", John Wiley, 2001.


Max. Marks: 80 Exam Duration : 3 hrs.





SECX5087 ADVANCED CRYSTAL GROWTH TECHNIQUESL T P Credits Total Marks

3 0 0 3 100

Unit I 10 hrs.

Crystal Growth theory- Introduction - Nucleation - Gibbs-Thomson equation for melt and solution - Kinetic theoryof nucleation - Limitations of classical nucleation - Rate of nucleation - Different shapes of nucleus- spherical, capshaped and cylindrical.

UNIT II 10 hrs.

Growth from Melt - Bridgeman method - Kyropolous method - Czochralski method - Verneuil method - Zonemelting method. Growth from Flux - Slow cooling method - Temperature difference method - High pressure method- Solvent evaporation method - Top seeded solution growth.

UNIT III 10 hrs.

Growth from Vapour phase - Physical vapour deposition - Chemical vapour transport - Open and closed system -Thermodynamics of chemical vapour deposition process - Physical and Thermo-chemical factors affecting growthprocess.

UNIT IV 10 hrs.

Growth from Solutions - Solvent and solutions - solubility - Preparation of a solution - Saturation andSupersaturation - Measurement of supersaturation - Expression for supersaturation - Low temperature solution growth -Slow cooling method - Manson Jar method - Evaporation method - Temperature gradient method - Electro crystallization.Growth from Gels - Experimental methods - Chemical reaction method - Reduction method - Complex decompositionmethod - Solubility reduction method - Growth by hydrothermal method.

UNIT V 10 hrs.

Epitaxy - Vapour Phase Epitaxy (VPX) - Liquid Phase Epitaxy (LPX) - Molecular Beam Epitaxy (MBE) - AtomicLayer Epitaxy (ALE) - Elctroepitaxy - Metalorganic Vapour Phase Epitaxy (MOVPE) - Chemical Beam Epitaxy (CBE).

REFERENCE BOOKS:1. Sangwal.K, "Elementary Crystal Growth", 1st Edition, Saaan Publiser, UK, 1994.2. Faktor.M.M. Garret. I, "Growth of Crystals from Vapor", 1st Edition, Chapmann and Hall, 1988.3. Santhana Ragavan. P, Ramasamy.P, "Crystal Growth and Process", 1st Edition, KRU Publications, 2000.4. Ramasamy. P, ISTE Summer School Lecture Notes, "Crystal Growth Centre", Anna University, Chennai, 1991.5. Brice. J.C, "Crystal Growth Process", 1st Edition, John Wiley Publications, New York, 1986.6. Chernov.A.A, "Modern crystallography: III. - Crystal Growth", 1st Edition, Springer Series in Solid State, New York, 1984.


Max. Marks: 80 Exam Duration : 3 hrs.





SECX5022ANALOG AND MIXED SIGNAL INTEGRATED

CIRCUITS(Common to VLSI, NanoTech)


3 1 0 4 100

UNIT I SINGLE STAGE AMPLIFIERS AND CURRENT MIRRORS 10 hrs.

Basics of CMOS - Analog model of MOSFET - low and high frequency models - Simple CMOS current mirror -source degenerated current mirrors - high output impedance current mirrors -All NMOS Operational Amplifier Design-Bipolar current mirrors - Bipolar gain stages - gain enhancement techniques - Frequency response.

UNIT II OP AMP DESIGN AND ADVANCED CURRENT MIRRORS 10 hrs.

Two stage CMOS op amp - op amp as a comparator - Charge injection errors, Latched Comparators - Advancedcurrent mirrors - folded cascade and current mirror op amp - Linear settling time revisited, fully differential op amp -Analysis of Differential Amplifier with active load, supply and temperature independent biasing techniques.

UNIT III VOLTAGE REFERENCE, SAMPLE AND HOLD CIRCUITS 10 hrs.

Sample and hold circuits - MOS sample and hold basics - examples of CMOS S/H circuits - Bipolar andBiCMOS S/H circuits - Band gap reference basics - translinear gain cell - Translinear multiplier- Basics of OTA AmplifiersDesign.

UNIT IV DATA CONVERTERS AND NEURAL INFORMATION PROCESSING 10 hrs.

High speed A/D and D/A converters - High resolution converters - Sigma delta A/D converter - InterpolativeModulators - Testing of converters Biologically Inspired Neural Networks - Low Power Neural Networks - Analog cellLayout - Mixed Analog - Digital Layout.

UNIT V SWITCHED CAPACITOR CIRCUITS AND PLL 10 hrs.

Basic building blocks of switched capacitor circuits - Basic operation and Analysis -Switched capacitor amplifier -Switched capacitor integrators - Z Domain Model Representation of Switched Capacitor Circuits - Switched Capacitorfilter Design - Charge injection. Basic loop architecture of PLL - Linearized PLL model - Phase detectors - Sequentialphase detector - PLL with charge pump phase comparator - VCO.

TEXT BOOKS: 1. David A Johns and Ken Martin "Analog Integrated circuit design" John wiley & Sons, 2004. 2. Gray & Mayer, "Analysis and Design of Analog Integrated Circuits" John wiley and Sons, 4th edition, 2005.

REFERENCE BOOKS: 1. Behzad Razavi "Design of Analog CMOS Integrated circuits" Tata Mc Graw Hill, India Ltd., 2000. 2. Franco Maloberti, "Analog Design for CMOS VLSI Systems" Springer International Edition, BS publications, 2003. 3. Roger T.Howe and Charles G.Sodini, "Micro Electronics an Integrated Approach" Pearson Education Pvt Ltd, 2004. 4. Roubik Gregorian, "Analog MOS Integrated Circuits for Signal Processing" John wiley and sons, 2004. 5. Rudy Van de Plassche, "CMOS Integrated A/D and D/A converters" Springer International Edition., BS publications, 2003.







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