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Multiple Exciton Generation in Quantum Dots James Rogers Materials 265 Professor Ram Seshadri
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Multiple Exciton Generation in Quantum Dots

Feb 03, 2022

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Page 1: Multiple Exciton Generation in Quantum Dots

Multiple Exciton Generation in Quantum Dots

James Rogers

Materials 265

Professor Ram Seshadri

Page 2: Multiple Exciton Generation in Quantum Dots

Exciton Generation

Eg < Ehv < 2Eg Ehv > 2Eg

Single Exciton Generation in Bulk

Semiconductors

Multiple Exciton Generation in Bulk

Semiconductors

Presenter
Presentation Notes
Both energy and momentum must be conserved…
Page 3: Multiple Exciton Generation in Quantum Dots

Singe exciton efficiency limits

• Record Laboratory efficiency for crystalline silicon under solar irradiation: 24.7%

• Thermodynamic limit for one photon-one exciton generation under solar irradiation: 33%

• Amount of incident energy lost as heat: 47%

Page 4: Multiple Exciton Generation in Quantum Dots

Multiple exciton efficiency limits

– Theoretical efficiency if carriers are extracted prior to cooling: 67%

Te ≡ hot carrier temperature

– For Ehv > 2∙Eg we consider three possibilities

– 1 e-h+ pair per photon– 2 e-h+ pairs per photon– M e-h+ pairs per photon

– Theoretical efficiency achieved through MEG: 43%

Page 5: Multiple Exciton Generation in Quantum Dots

How does MEG occur?

• Impact ionization– Consider the familiar auger recombination process:

– Consider the inverse of this process:

+Ze

e-

Auger electron

+Ze

e-

High energy carrier

Scattered high energy e-

Secondary e-

Impact Ionization

(I.I.)

Page 6: Multiple Exciton Generation in Quantum Dots

MEG is an unlikely process• Competing processes

– Inelastic carrier-carrier scattering (1013 sec-1)• Dependent on carrier concentration

– Phonon scattering (1012 sec-1)• Independent of carrier concentration

– Auger recombination

– Exciton-exciton annihilation (10-100 ps)• Exciton concentration dependent

Impact ionization rates in bulk semiconductors surpass phonon scattering rates only when the electron kinetic energy exceeds

~5ev

Presenter
Presentation Notes
Exciton-Exciton annihilation is 50x faster for 2 excitons than for 1
Page 7: Multiple Exciton Generation in Quantum Dots

Effects of quantum confinement

Discretization of electronic structure

Change in bandgap energy

Importance of Surface States

Page 8: Multiple Exciton Generation in Quantum Dots

Effect of particle size on band structure

Theoretical transitions for four PbSe QD sizes with experimental transitions

superimposed.

Observable size effects on particle absorbance

Page 9: Multiple Exciton Generation in Quantum Dots

MEG in semiconductor nanocrystals

• Tunable bandgap

• Phonon bottleneck

• Surface traps

Page 10: Multiple Exciton Generation in Quantum Dots

Femtosecond (fs) transient absorption spectroscopy

Step 1:– Expose particle to

short pulse (~200 fs) with Ehv > Eg

– Measure absorbance

Step 2:– Expose particle to

short pulse (~1 ps) with Ehv << Eg

– Measure absorbance Experimental observation of pulse and probe absorbance

Page 11: Multiple Exciton Generation in Quantum Dots

Quantum yield (QY) for exciton formation from a single photon vs. Ehv

Exciton generation vs. Eg

Exciton population decay dynamics obtained by probing intrabandtransitions

λprobe = 5.0μmdparticle = 5.7nm

Presenter
Presentation Notes
Three PbSe QD sizes and one PbS (dia. ) 3.9, 4.7, 5.4, and 5.5 nm, respectively, and Eg =0.91, 0.82, 0.73 eV, and 0.85 eV respectively. The density-dependent carrier dynamics of the signal decay provide a quantitative measurement of the number of electron-hole pairs at the absorption band edge per absorbed photon, and thus of the QY.
Page 12: Multiple Exciton Generation in Quantum Dots

Competing effects:Cooling rate vs. particle diameter

– Electron cooling rate increases as size decreases

– Exciton lifetime decreases as size decreases

Page 13: Multiple Exciton Generation in Quantum Dots

State of current research– Multiple exciton generation has been measured

– Carrier cooling rate has been slowed

Toward potential applications– Must electronically couple NCs to their

environment

– High collection efficiencies must be achieved

Page 14: Multiple Exciton Generation in Quantum Dots

Schottky solar cells from NC films

• Simple device architecture (ITO/NC/Metal)

• High external quantum yields (EQE > 65%)

• Record short circuit currents (JSC > 21 mA∙cm-2)

• Efficiency under solar illumination: 2.1%

Page 15: Multiple Exciton Generation in Quantum Dots

Conclusion

• Semiconductor NCs are an inexpensive alterative to silicon devices which have the potential to achieve EQEs greater than 100%

• Particle size and composition precisely determine both MEG rate and cooling rate

• Practical application of this technology will require better electronic coupling and more efficient charge capture

Page 16: Multiple Exciton Generation in Quantum Dots

References

1. Beard M.C.; Ellingson R.J.; Multiple exciton generation in semiconductor nanocrystals: Toward efficient solar energy conversion; Laser & Photon Review (2) 377-399 (2008)

2. Bayer M.; Hawrylak P.; et al. Coupling and Entangling of Quantum States in Quantum Dot Molecules; Science (291) 451-453 (2001)

3. Ellingson R.J.; Beard M. C.; et. al. Highly Efficient Multiple Exciton Generation in Colloidal PeSe and PbS Quantum Dots; Nano Letters (5) 865-871 (2005)

4. Nozik A.J.; Spectroscopy and Hot Electron Relaxation Dynamics in Semiconductor Quantum Wells and Quantum Dots; Annu. Rev. Phys. Chem. (52) 193-231 (2001)

5. Luther J.M.; Law M.; Beard B.C.; et. al. Schottky Solar Cells Based on Colloidal Nanocrystal Films; Nano Letters (8) 3488-3492 (2008)