MRS Online Proceedings Library Volume 671

8/10/2019 MRS Online Proceedings Library Volume 671

http://slidepdf.com/reader/full/mrs-online-proceedings-library-volume-671 1/4

MRS ONLINE PROCEEDINGS LIBRARY - January 2001 - VOLUME 671

Why abrasive free Cu slurry is promising?Yasuo Kamigata and Yasushi Kurata and Katsuyuki Masuda and Jin Amanokura and Masato Yoshida and Masanobu Hanazono

MRS Online Proceedings Library, Volume 671, January 2001, M1.3

doi: 10.1557/PROC-671-M1.3, Published online by Cambridge University Press 18 Mar 2011

Resolving the Origin of a Cmp-Associated Yield/Reliability Issue “Center Spike”– Film Thickness Bulge in the Wafer Center. is CMP to Be HeldResponsible for Its Appearance?David Wei and Yehiel Gotkis and John Boyd and Rodney Kistler



Effects of Nano-scale Colloidal Abrasive Particle Size on SiO2 by Chemical Mechanical Polishing

Chunhong Zhou and Lei Shan and S.H. Ng and Robert Hight and Andrew. J. Paszkowski and S. Danyluk



Polyurethane Pad Degradation and Wear Due to Tungsten and Oxide CMP Amy L. Moy and Joseph L. Cecchi and Dale L. Hetherington and David J. Stein



Evaluation of Mechanical and Tribological Behavior, and Surface Characteristics of CMP Pads A. K. Sikder and I. M. Irfan and Ashok Kumar and A. Belyaev and S. Ostapenko and M. Calves and J. P. Harmon and J. M. Anthony



Rotational Averaging of Material Removal During CMPDavid R. Evans and Michael R. Oliver

MRS Online Proceedings Library, Volume 671, January 2001, M1.4doi: 10.1557/PROC-671-M1.4, Published online by Cambridge University Press 18 Mar 2011

An Evaluation on The Effects of Newly Designed Abrasives in CMP SlurryNobuo Kawahashi and Masayuki Hattori



High-performance CMP Slurry with Inorganic/Resin Abrasive for Al/Low k DamasceneHiroyuki Yano and Yukiteru Matsui and Gaku Minamihaba and Nobuo Kawahashi and Masayuki Hattori



Oxide Powders for Chemical Mechanical Polishing Produced by Chemical Vapor SynthesisH. Sieger and M. Winterer and U. Keiderling and H. Hahn



Synthesis of Model Alumina Slurries for Damascene Patterning of Copper Byung-Chan Lee and David J. Duquette and Ronald J. Gutmann



Interplay Between Copper Electroplating and Chemical Mechanical Planarization

David K. Watts and Yusuke Chikamori and Tatsuya Kohama and Norio Kimura and Koji Mishima and Akihisa Hongo



© Cambridge University Press 2001.




Effect of Copper Film Surface Properties on CMP Removal RateYuchun Wang and Rajeev Bajaj and Gary Lam and Yezdi Dordi and Doyle Bennet



Copper CMP for Dual Damascene Technology: Some Considerations on the Mechanism of Cu RemovalDavid Wei and Yehiel Gotkis and Hugh Li and Stephen Jew and Joseph Li and Sri Srivatsan and Joseph Simon and John M. Boyd and KYRamanujam and Rodney Kistler



Analysis of Copper to Tantalum Transition in Copper CmpJ.M. Kang and S. Wu and T. Selvaraj and P.D. Foo



Analysis of CMP planarization performance for STI process

Manabu Tsujimura and Ebara Corporation and Kamata Ohta-ku and Tokyo Japan



A Study on STI and Damascene CMP using Chip Level SimulationKyung-Hyun Kim and Yoo-Hyon Kim and Kwang-Bok Kim and Chang-Ki Hong and Moon-Hyun Yoo



Characterization and Control of Copper CMP with Optoacoustic MetrologyMichael Gostein and Paul Lefevre and Alex A. Maznev and Michael Joffe



Fixed Abrasive Technology for STI CMP on a Web Format Tool Alexander Simpson and Laertis Economikos and Fen-Fen Jamin and Adam Ticknor



Modeling of Feature-Scale Planarization in STI CMP Using MESATM

Thomas Laursen and Inki Kim and James Schlueter



Modeling of Pattern Dependencies for Multi-Level Copper Chemical-Mechanical Polishing ProcessesTamba Tugbawa and Tae Park and Brian Lee and Duane Boning



Direct Measurement of Planarization Length for Copper Chemical Mechanical Planarization Polishing (CMP) Processes Using a Large Pattern TestMaskPaul Lefevre and Albert Gonzales and Tom Brown and Gerald Martin and Tamba Tugbawa and Tae Park and Duane Boning and Michael Gostein



A Contact-Mechanics Based Model for Dishing and Erosion in Chemical-Mechanical Polishing

Joost J. Vlassak







Modeling the Effects of Polishing Pressure and Speed on CMP RatesEd Paul



Wafer Nanotopography Effects on CMP: Experimental Validation of Modeling MethodsBrian Lee and Duane S. Boning and Winthrop Baylies and Noel Poduje and Pat Hester and Yong Xia and John Valley and Chris Koliopoulus andDale Hetherington and HongJiang Sun and Michael Lacy



Effects of Particle Concentration in CMPWonseop Choi and Seung-Mahn Lee and Rajiv K. Singh



CMP related/CMP revealed short- and long-range integration interactions in copper dual damascene technology

Yehiel Gotkis and Rodney Kistler



A Planarization Model in Chemical Mechanical Polishing of Silicon Oxide using High Selective CeO2 Slurry

Jong Won Lee and Bo Un Yoon and Sangrok Hah and Joo Tae Moon



Layout Pattern Density and Oxide Deposition Profile Effects on Dielectrics CMPYoung B. Park and Joon Y. Kim and Dae W. Seo



A CMP Numerical Model Combining Die Scale and Feature Scale Polishing CharacteristicsStéphanie Delage and Frank Meyer and Goetz Springer



A Characterization of New Cleaning Method Using Electrolytic Ionized Water for Poly Si Cmp ProcessN. Miyashita and Shin-ichiro Uekusa and S. Seta and T. Nishioka



Engineered porous and coated Silica particulates for CMP applicationsK.S. Choi and R. Vacassy and N. Bassim and R. K. Singh



Control of Pattern Specific Corrosion During Aluminum Chemical Mechanical PolishingHyungjun Kim and Panki Kwon and Sukjae Lee and Hyung-Hwan Kim and Sang-Ick Lee and Seo-Young Song and Chul-Woo Nam



Direct Visualization of Particle Dynamics in Model CMP Geometries

Claudia M. Zettner and Minami Yoda







Effect Of pH On Chemical-Mechanical Polishing Of Copper And Tantalum Anurag Jindal and Ying Li and S. V. Babu



Multiprobe End-Point Detection for Precision Control of the Copper CMP ProcessThomas Laursen and Malcolm Grief



Environmentally-benign cleaning for giga DRAM using electrolyzed water Kunkul Ryoo and Byeongdoo Kang



Polishing and Cleaning of Low K Dielectric Material for ild and Damascene

Yuchun Wang and Rajeev Bajaj and Yongsik Moon and David Mai and Kapila Wijekoon and Yufei Chen and Fritz Redeker



Mechanisms of Post-CMP CleaningH. Liang and E. Estragnat and J. Lee



Slurry Retention and Transport during Chemical-Mechanical Polishing of Copper Anurag Jindal and Ying Li and Satish Narayanan and S. V. Babu




MRS Online Proceedings Library Volume 671

Documents