MOSFET IV CHARACTERISTICS

PMOS Id-Vds Family of

Curves

PMOS Id-Vgs PMOS Subthreshold

Characteristics

PMOS Field VT

NMOS Id-Vds Family of

Curves

NMOS Id-Vgs NMOS Subthreshold

Characteristics

NMOS Field VT

MOSFET IV CHARACTERISTICS

Lot Number = F050118 Wafer Number = D4 Date = 11-13-2006Process = SMFL CMOS Product = DAC03

NFAM NVT NSUB NFIELD

PFAM PVT PSUB PFIELD

NMOS L/W = 4/16

PMOS L/W = 4/16

PMOS NMOS Units

Mask Length / Width 4/16 4/16 µm

VT -1.48 1.34 V

Lambda (for Vgs = Vdd) 0.02833 0.0262 V-1

Max gm / mm of channel width 8.75 25.0 mS/mm

Idrive 20 50 µA/µm

Ion/Ioff @ Vd = 0.1V 6 6 Decades

Ion/Ioff @ Vd = 5V 7 7 Decades

Ioff @ Vd = 0.1V 1E-11 5E-10 A/µm

Ioff @ Vd = 5V 1E-11 5E-10 A/µm

Sub-Vt Slope @ Vd = 0.1V 100 100 mV/Dec

Sub-Vt Slope @ Vd = 5 V 100 100 mV/Dec

DIBL@1nA/µm =Vg/Vd 0 0 mV/V

Field VT -23 23 V

Lot Number = F050118 – Wafer Number = D4, Die Location R= , C=

MOSFET EXTRACTED PARAMETERS


Curves


Characteristics

PMOS Field VT


Curves


Characteristics

NMOS Field VT


Lot Number = F050118 Wafer Number = D4 Date = 11-17-2006Process = SMFL CMOS Product = DAC03



NMOS L/W = 2/16

PMOS L/W = 2/16

PMOS NMOS Units


VT -1.51 1.36 V

Lambda (for Vgs = Vdd) 0.115 0.0417 V-1

Max gm / mm of channel width 21.3 31.3 mS/mm

Idrive 54.4 93.8 µA/µm



Ioff @ Vd = 0.1V 5.9e-11 5.0e-10 A/µm

Ioff @ Vd = 5V 5.9e-11 5.0e-10 A/µm




Field VT -23 23 V

Lot Number = F050118 – Wafer Number = D4, Die Location R= , C=


M1 to PolyCBKR

M1 to N+CBKR

M1 to P+CBKR

N+Van Der Pauw

P+Van Der Pauw

P-WellVan Der Pauw

Inverter PolyVan Der Pauw

M1 Van Der Pauw

INVERTERS, VAN DER PAUW AND CBKR

Lot Number = F050118 – Wafer Number = D4 , Die Location R= , C=

Rhos Van der Pauw

P+ 115 Ohms

N+ 5.8 Ohms

well 614 Ohms

Poly 20.0 Ohms

Al 0.0662 Ohms

Contact Gs CBKR

P+ 42 mmho/µm2

N+ 8 mmho/µm2

poly 37 mmho/µm2

OpAmp

Gain None

Offset None mVolts

GBW None Hz

Ring Oscillator Vdd=5V

# Stages 73

Period 104 nsec

td 0.712 nsec

Inverter

VinL 2.4 V

VinH 3 V

VoL 0.4 V

VoH 4.5 V

Vinv 2.6 V

Imax 4.5 mA

Gain -21.5

0=ViL-VoL 2.0 V

1=VoH-ViH 1.5 V

EXTRACTED PARAMETERS FROM INVERTERS, VAN DER PAUW AND CBKR

Lot Number = F050118 – Wafer Number = D4 , Die Location R= , C=

VIA CHAIN

M1-P+ None ohms

M1-M2 None ohms

73 Stage Ring at 6V, td = 0.228ns73 Stage Ring at 5V, td = 0.712ns

2µm/32µm L/W NMOS AND PMOS

Family of curves for L=2µm MOSFETs

Lot Number = F050118 Wafer Number = D1










Lot Number = F050118 – Wafer Number = ??

nMOSFET VT WAFER MAP


Curves


Characteristics

PMOS Field VT

None


Curves


Characteristics

NMOS Field VT


Lot Number = F050408 Wafer Number = D1 Date = 10-23-2006Process = Sub-CMOS Product = Mixed



NMOS L/W = 2/16

PMOS L/W = 2/16

PMOS NMOS Units


VT -0.931 0.507 V

Lambda (for Vgs = Vdd) 0.239 .0308 V-1

Max gm / mm of channel width 50 75 mS/mm

Idrive 213 320 µA/µm



Ioff @ Vd = 0.1V 1E-13 1E-13 A/µm

Ioff @ Vd = 5V 1E-11 1E-13 A/µm




Field VT none 22 V

Lot Number = F050408, Wafer Number = D1, Die Location R= , C=


M1 to PolyCBKR

M1 to N+CBKR

M1 to P+CBKR

N+Van Der Pauw

P+Van Der Pauw

P-WellVan Der Pauw


M1 Van Der Pauw

INVERTERS, VAN DER PAUW AND CBKRLot Number = F050408, Wafer Number = D1, Die Location R= , C=

Rhos Van der Pauw

P+ 39.6 Ohms

N+ 39.3 Ohms

well 1182 Ohms

Poly 114 Ohms

Al 0.0583 Ohms

Contact Gs CBKR

P+ 0.297 mmho/µm2

N+ 2.14 mmho/µm2

poly 7.58 mmho/µm2

OpAmp

Gain >5000

Offset -1.17 mVolts

GBW Hz


Stages 17

Period 90 nsec

td 2.6 nsec


VIA CHAIN

M1-P+ ohms

M1-M2 ohms


Inverter

VinL 1.6 V

VinH 2.3 V

VoL .386 V

VoH 4.59 V

Vinv 2.0 V

Imax 0.101 mA

Gain 51

0=ViL-VoL 1.21 V

1=VoH-ViH 2.29 V

1 µm/ 16 µm L/W NMOS AND PMOS

Family of curves for L= 1µm MOSFETs

Lot Number =F050408 Wafer Number =D3

2 µm/ 16 µm L/W NMOS AND PMOS

Family of curves for L= 2µm MOSFETs

Lot Number =F050408 Wafer Number =D1

F050408 D1 Center 2/16

EXTRACTED PARAMETERS FROM Operational Amplifier


gate delay td =90ns/2/17= 2.6ns

EXTRACTED PARAMETERS FROM Ring Oscillator



Lot Number = F , Wafer Number = D


Curves


Characteristics

PMOS Field VT


Curves


Characteristics

NMOS Field VT


Lot Number = Wafer Number = Date = 11-13-2006Process = Product =



NMOS L/W =

PMOS L/W =

PMOS NMOS Units

Mask Length / Width µm

VT V

Lambda (for Vgs = Vdd) V-1

Max gm / mm of channel width mS/mm

Idrive µA/µm

Ion/Ioff @ Vd = 0.1V Decades

Ion/Ioff @ Vd = 5V Decades

Ioff @ Vd = 0.1V A/µm

Ioff @ Vd = 5V A/µm

Sub-Vt Slope @ Vd = 0.1V mV/Dec

Sub-Vt Slope @ Vd = 5 V mV/Dec

DIBL@1nA/µm =Vg/Vd mV/V

Field VT V

Lot Number = F , Wafer Number = D , Die Location R= , C=


M1 to PolyCBKR

M1 to N+CBKR

M1 to P+CBKR

N+Van Der Pauw

P+Van Der Pauw

P-WellVan Der Pauw


M1 Van Der Pauw

INVERTERS, VAN DER PAUW AND CBKRLot Number = F , Wafer Number = D , Die Location R= , C=

Rhos Van der Pauw

P+ Ohms

N+ Ohms

well Ohms

Poly Ohms

Al Ohms

Contact Gs CBKR

P+ mmho/µm2

N+ mmho/µm2

poly mmho/µm2

OpAmp

Gain

Offset mVolts

GBW Hz


Stages

Period nsec

td nsec


VIA CHAIN

M1-P+ ohms

M1-M2 ohms

Lot Number = F , Wafer Number = D , Die Location R= , C=

Inverter

VinL V

VinH V

VoL V

VoH V

Vinv V

Imax mA

Gain

0=ViL-VoL V

1=VoH-ViH V

µm/ µm L/W NMOS AND PMOS

Family of curves for L= µm MOSFETs

Lot Number =F Wafer Number =


Lot Number = F , Wafer Number = D

MOSFET IV CHARACTERISTICS

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