[email protected]PRAGUE 15 - 18 November 2002 Monolithic Silicon Pixel Detectors in SOI Technology J. Marczewski, K. Domanski, P. Grabiec, M. Grodner, K. Kucharski, B. Jaroszewicz, A. Kociubinski, D. Tomaszewski Institute of Electron Technology, Warszawa W. Kucewicz, S. Kuta, H. Niemiec, M. Sapor University of Mining and Metallurgy, Krakow M. Caccia University of Insubria, Como Presented by Jacek Marczewski
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Monolithic Silicon Pixel Detectors i n SOI Technology
Monolithic Silicon Pixel Detectors i n SOI Technology. J. Marczewski, K. Domanski, P. Grabiec, M. Grodner, K. Kucharski, B. Jaroszewicz, A. Kociubinski, D. Tomaszewski Institute of Electron Technology, Warszawa W. Kucewicz, S. Kuta, H . Niemiec, M. Sapor - PowerPoint PPT Presentation
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The bulk test structures has been used to produce SOI transistors on SOITEC wafers. The technology sequence was similar as it is provided for SOI detectors. The substrate parameters are exactly the same like for future SOI detectors except low resistivity of the handle wafers.