Mobile System Considerations for SDRAM Interface Trends Andrew B. Kahng †‡, Vaishnav Srinivas ‡¥ June 5 th, 2011 CSE † and ECE ‡ Departments University.

Mobile System Considerations for SDRAM Interface Trends

Andrew B. Kahng†‡, Vaishnav Srinivas‡¥

June 5th, 2011

CSE† and ECE‡ DepartmentsUniversity of California, San Diego

Qualcomm Inc. ¥

(2/13)

Outline

• SDRAM Memory Interfaces: Today and Tomorrow

• Motivation

• Trends in DRAM Density and Data Rate

• Trends in Mobile Processor Requirements

• Memory Interface Calculator

• Exploration Using the Calculator

• Summary and Next Steps

(3/13)

SDRAM Memory Interfaces Today and Tomorrow

• Various interconnect and signaling options exist:

o Interconnect:

Die stack/MCP POP DIMM 3D-Stack

o Signaling:

DDR, XDR, Serial, Wide IO

• Exploration of these options based on the primary bounds (Capacity, Throughput, Power and Latency) is required for making the correct tradeoffs

(4/13)

Motivation• The memory interface calculator includes:

o IO switching, bias and termination power

o IO/PHY and interconnect latencies

o Input parameters for exploration:• Termination values

• Loading

• Number of data and strobe pins

• Memory timing parameters

• IO/PHY “retiming” power

• Predict gaps between offerings and requirements

• Integrating into CACTI can help exploration of system metrics

(5/13)

Trends in DRAM Capabilities

• DRAM densities to double every 3 years

• Projections for DRAM densities revised downwards over time

• Current densities at 4Gb/die

• DRAM data rates to double every 4-5 years

• Projections for DRAM data rates revised upwards over time

• Current data-rates at 2.2 Gb/s

(6/13)

Trends in Mobile Processor Requirements

 Market 2010 2011 2012 2013 2014

Desktop 3.0 4.2 5.6 7.4 10.2

Laptop 2.0 3.3 4.6 6.3 8.0

Mobile 0.3 0.5 0.8 1.0 1.3

• Trends for mobile processor requirements

oCapacity to scale 3-4x every 3 years

oThroughput to double every 3 years

• The requirements are very dynamic!

• Quick exploration and projection for compatible memories is useful

Capacity Requirements in GB(Source: IDC)

Mobile Handset Throughput Requirements in GB/s(Source: Qualcomm)

(7/13)

Memory Interface Calculator

Primary Bound Parameters affected

CapacityNumber of ranks and channels

Memory DensityCapacitive loading

ThroughputData-rate, number of data lanes

Timing parametersSignal Integrity skew and jitter

PowerTermination scheme

Supply voltageActivity factor

LatencyNumber of pipeline stages

Interconnect delayMemory access time

(8/13)

Memory Interface Calculator Summary

Bound LPDDR2 TSS-Wide IO DDR3 Serial Mobile-XDR

Clock Speed (MHz) 300-533,

DDR 200-333, SDR 400-800, DDR 4-8 GHz, Serial 400-533, Octal

Throughput (GB/s) 3-4.3 12-24 6-13 12-17 12-17

Peak IO Power Efficiency (mW/GBps)

~40 ~10 ~120 ~60 ~20

Peak Core Power Efficiency (mW/GBps)

~50 ~35 ~100 ~50 ~50

Total Peak Power Efficiency (mW/GBps)

~90 ~45 ~220 ~110 ~70

Active Idle IO Power (mW) ~6-10 ~2-4 ~500-600 ~450 ~200

Active Idle Core Power (mW) ~20 ~20 ~150 ~20 ~20

Capacity (GB) (Current trends)

0.5-1 for x32

dual rank

0.5-2 through multi-die stacking

2-8 for dual-rank

DIMM

0.5-1 for x32 dual rank

0.5-1 for x32 dual rank

Latency from MC-DRAM-MC ~50ns ~40ns

~45ns, but penalty if DLL

is off (~512 Tck)

~65ns, PLL lock penalty if off

~60ns, DLL penalty if off

(9/13)

Memory Interface Calculator Summary

Throughput in GB/s

• The spider chart highlights the design space coveredo Wide IO covers the largest space

for lower capacitieso Large capacity systems still need

DDR3/DDR4• Alternatives to be explored outside

the existing space?

• Before LPDDR3 came up in JEDEC, Wide-IO and Serial Memory were being explored.

• LPDDR3 was brought up as a way to fill this gap in 2012-2014 timeframe

(10/13)

Exploration using the calculator• How fast can LPDDR3 operate?

o With terminations?o With DLL/better retiming?o With lower loading?o With better packaging?o POP versus MCP

• Wide IO exploration?o Transition to DDR for Wide IO?o Number of data lanes per strobe – 8, 16 or 32?o When does interface timing and signal/power integrity become an issue

for Wide IO?

• High-capacity memory alternatives to DDR3/DDR4?o MCP with larger number of wire-bonded dies?o TSS with large number of stacks (8?)o TSS-MCP if stacking with processor is a thermal risk?

(11/13)

LPDDR3 Exploration

Inputs to the calculator Value Units

Number of memories on data pin 1  

Number of memories on add pin 1  

Number of memories on clk pin 1  

Frequency of clock 1250 MHz

Retiming current 25 mA

Number of data pins 32  

Number of DQS pairs 8  

Termination RTT on DQ & DQS 60 ohms

Termination RTT on CA 60 ohms

Memory density for each memory core 4 Gb

TDS 100 ps

TDH 100 ps

TDQSQ 100 ps

TQHS 100 ps

Outputs of the calculator Value Units

     Signal Swing on DQ&DQS, Vsw.DQ 0.80 (V)

Switching Power on DQ 52.80 (mW)

Switching Power on DQS 52.80 (mW)

Switching Power on CLK + CLK diff termination 12.78 (mW)

Bias and Static Power 30.00 (mW)

Signal Swing on CA, Vsw.DQ 0.65 (V)

Switching Power on CA 19.24 (mW)

Termination Power 225.45 (mW)

I/O power for CPU chip 393.07 (mW)

Throughput 10 GB/s

Capacity 0.5 GB

Latency 38.6 ns

Tskew 41 ps

Tjitter 29 ps

Terror 20 ps

Timing margin WRITE 60 ps

Timing margin READ -5 ps

(12/13)

LPDDR3 Exploration

Maximum speeds for: Preliminary Answers from the calculator

POP, Unterminated LPDDR3 with ~150ps memory timing parameters (tDS/tDH/tDQSQ/tQHS)?

800MHz for single-rank 800MHz for dual-rank will need careful architecture

and design

POP, Terminated LPDDR3 with ~100ps memory timing parameters? 1250MHz

External (MCP), Unterminated LPDDR3Even 533MHz for dual-rank is

challenging and may need sophisticated retiming

External (MCP), Terminated LPDDR3? 1066MHz

(13/13)

Summary and Next Steps

• A simple framework to model interconnect and IO/PHY timing and power for existing and upcoming SDRAM memory interfaces

• Helps explore standards and design space• Helps identify gaps between DRAM and SOCs• Next Steps:o Integrate the memory interface models within CACTI oChallenge the calculator for future usage cases for mobile

productso Include more parameters, including silicon area, packaging

options and number of data lanes per strobe pin