BS / CS Direct Broadcasting CATV Multimedia Network HT/MMDS/FRA PDC/GSM/CDMA Multimedia Network BS / CS Direct Broadcasting CATV Multimedia Network HT/MMDS/FRA PDC/GSM/CDMA Multimedia Network GaAs DEVICES GENERAL CATALOG 1 3 9 7 MAP FOR SELECTION PRODUCTS APPLICATION PACKAGE MITSUBISHI GaAs solutions for communication networks in the information era. We pro e provide a v vide a var ariety of solutions to iety of solutions to GaAs de GaAs devices vices, from satellite , from satellite comm communication systems to cellular unication systems to cellular handset applications handset applications. We provide a variety of solutions to GaAs devices, from satellite communication systems to cellular handset applications. Features
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BS / CS
Direct Broadcasting
CATV Multimedia Network
HT/MMDS/FRA
PDC/GSM/CDMA
Multimedia Network
BS / CS
Direct Broadcasting
CATV Multimedia Network
HT/MMDS/FRA
PDC/GSM/CDMA
Multimedia Network
GaAs DEVICES GENERAL CATALOG
1
3
9
7
MAP FOR SELECTION
PRODUCTS
APPLICATION
PACKAGE
MITSUBISHI GaAs solutionsfor communication networksin the information era.
We proe provide a vvide a varariety of solutions to iety of solutions to GaAs deGaAs devicesvices, from satellite , from satellite commcommunication systems to cellular unication systems to cellular handset applicationshandset applications.
We provide a variety of solutions to GaAs devices, from satellite communication systems to cellular handset applications.
Features
M
AP
For
SELE
CTIO
N
1
Communication networks, such as high speed Internet,video-on-demand and high-speed data communcation,are developing rapidly.We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs products designed for satellite communication systems to base stations and cellular handset applications.
MITSUBISHI GaAs devices: The best solution for realizing the information era.MITSUBISHI GaAs devices: The best solution for realizing the information era.
GaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERSGaAs FET SERIES FOR MICROWAVE-BAND LOW-NOISE AMPLIFIERS
GaAs HYBRID IC&MMICGaAs HYBRID IC&MMICGaAs HYBRID IC
Note : MGF4xxx=HEMT MGF1xxx=MES FET
3.0
2.5
2.0
1.5
1.0
0.5
DBS Down ConverterTVRO ReceiverSatellite Communication
Radio Link SystemSatellite CommunicationSpace Craft
GD-4 GD-16 GD-27 GD-9
MGF4953A
MGF4954A
MGF1303B MGF1908A
MGF1302 MGF1907A
MGF1403B
LEADLESS CERAMICPACKAGE
for CONSUMER USE
GD-30
MGF4931AM
4-Pin MINIMOLDPACKAGE
for CONSUMER USE
MICRODISC CERAMICPACKAGE
for INDUSTRIAL USE
MICRODISC CERAMICPACKAGE
for CONSUMER USE
No
ise
Fig
ure
NF
(d
B)
at 1
2GH
z
Application
freq
uenc
y(G
Hz)
0.5
1.0
1.5
2.0
Application Handheld phoneHEMT
W-CDMAPDC N-CDMA
1.429-1.453GHzFA01253
0.83-0.84GHzBA01237
0.887-0.925GHzBA01223
0.824-0.849GHzBA01241
0.893-0.958GHzFA01252
HBT
1.92-1.98GHzBA01224
1.92-1.98GHzBA01238
BA01243
2
Ou
tpu
t P
ow
er (
dBm
)
30
32
34
36
38
40
42
44
50
Application Base StationRadio Link SystemMobile Telephone
Radio Link SystemRadar System
Satellite Communication
L/S Band C Band X Band KU Band1-2/2-4 4-8 10.7-11.7 14.0-14.5Freq.(GHz)
GF-8
GF-8
GF-51
GF-27
GF-11
GF-49
GF-47GF-38
GF-53
MGFS52B
MGFL/S48V-A
MGFL/S45V-A MGFC45V
MGFC44V MGFK44A
MGFC42V
MGFK41A
MGFC40V
MGFC39V MGFX39V MGFK39V
MGFK38A
MGFK37V
MGFC36V-A MGFX36V
MGFK35V
MGFK33V
MGFK30V
MGFK25V
MGFC47V
GaAs FET FOR HIGH POWER DISCRETEGaAs FET FOR HIGH POWER DISCRETEGaAs FET FOR HIGH POWER DISCRETE
INTERNALLY MATCHED GaAs FET SERIES FOR L/S BAND HIGH POWER AMPLIFIERSINTERNALLY MATCHED GaAs FET SERIES FOR MICROWAVE-BAND HIGH POWER AMPLIFIERS
Application Radio Link SystemSatellite Communication
Ou
tpu
t P
ow
er (
dBm
)Freq.(GHz)
42
38
34
30
26
22
18
14
10
~L/S/C Band ~X/Ku Band ~8 ~14.5
GF-7
GF-50
GF-21
GF-55
GF-17
GD-27
MGF0912A
MGF0909A
MGF0905A
MGF0904A
MGF0915A
MGF0921A
MGF0920A
MGF0918A
MGF0917A
MGF0916A
MGF0919A/0913A
MGF0911AMGF0907B
MGF0910AMGF0906BMGF0952P
MGF0951P
MGF2445A
MGF2430A
MGF2415A
MGF2407A
MGF1953A
MGF1952A
MGF1951A
MGF1954A
GF-8
GF-38
GF-14
GF-27
MGF4851A
MGF0953P��
��:Under development
GF-18
PRO
DU
CT L
IST
3
GaAs FET SERIES FOR MICROWGaAs FET SERIES FOR MICROWAVE- BAND LOWVE- BAND LOW-NOISE AMPLIFIERS -NOISE AMPLIFIERS GaAs FET SERIES FOR MICROWAVE- BAND LOW-NOISE AMPLIFIERS
GaAs FET SERIES FOR MICROWAVE- BAND HIGH-POWER AMPLIFIERS(Discrete Devices)GaAs FET SERIES FOR MICROWAVE- BAND HIGH-POWER AMPLIFIERS(Discrete Devices)
MGF1302
MGF1303B
MGF1403B
MGF1907A
MGF1908A
MGF4951A
MGF4952A
MGF4953A
MGF4954A
MGF4931AM
MGF4934AM��
MGF4953B��
2.7
2
1.8
2.7
2
0.40
0.60
0.40
0.60
0.60
0.60
0.55
-
-
-
-
-
0.50
0.80
0.50
0.80
0.80
0.80
0.80
-
-
-
-
-
11.0
11.0
12.0
12.0
10.0
11.5
9.0
9
10.5
10.5
9
10.5
12.0
12.0
13.0
13.0
11.5
12.5
10.5
12
12
12
12
12
12
12
12
12
12
12
20
3
3
3
3
3
2
2
2
2
2
2
2
10
10
10
10
10
10
10
10
10
7.5
10
10
GD-4
GD-4
GD-9
GD-16
GD-16
GD-26
GD-26
GD-27
GD-27
GD-30
GD-30
GD-27
Type Number
Noise Figure(dB) Associated Gain(dB)
Typ. Max. Min. Typ.Frequency
(GHz)Drain-Source
Voltage(V)Drain Current
(mA)PackageOutline
Ta=25°C �� : Under development
MGF0904A
MGF0905A
MGF0906B
MGF0907B
MGF0909A
MGF0910A
MGF0911A
MGF0912A
MGF0913A
MGF0915A
MGF0916A
MGF0917A
MGF0918A
MGF0919A
MGF0920A
MGF0921A
MGF0951P
MGF0952P�
MGF0953P��
MGF1951A
MGF1952A
MGF1953A
MGF1954A
MGF2407A
MGF2415A
MGF2430A
MGF2445A
MGF4851A
-
-
35.5
38.5
37
37
40
-
-
-
-
-
-
-
-
-
-
-
-
11
15
18
21
23
26
29
31
12
-
-
37
40
38
38
41
-
-
-
-
-
-
-
-
-
-
-
-
13
17
20
23
24.5
27.5
30.5
32
14.5
26
33
-
-
-
-
-
40.5
29.5
35
21
23
25
28
30
31
31
36.5
28
-
-
-
-
-
-
-
-
-
11
7
10
8
10
10
10
9.5
11
13
17
19
18
17
16
15
11
11
18
7
5
4
3
7
6.5
5.5
5.5
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-42
-42
-
-
-
-
-
-
-
-
-
-
40
40
40
37
45
37
40
38
48
50
30
38
45
37
45
40
50
50
40
-
-
-
-
30
29
27
20
-
1.65
1.65
2.3
2.3
2.3
2.3
2.3
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
1.9
2.15
2.15
2.15
12
12
12
12
14.5
14.5
14.5
12
12
Min. Typ. Min. Typ.
Power Added Efficiency(%)
Frequency(GHz)
8
8
10
10
10
10
10
10
10
10
6
10
10
10
10
10
10
10
10
3
3
4
6
10
10
10
10
2.5
Drain-Source Voltage(V)
0.2
0.8
1.2
2.4
1.3
1.3
2.6
2.6
0.2
0.8
0.1
0.075
0.15
0.3
0.4
0.5
0.2
0.7
0.15
0.03
0.06
0.1
0.1
0.075
0.15
0.3
0.45
0.025
Drain Current(A)
PackageOutlineType Number
Output Power at 1dB GainCompression(dBm)
-
-
-
-
-
-
-
2.3
20
5
20
55
35
17
13
11
20
5
14
-
-
-
-
-
-
-
-
-
-
-
6.5
4
-
6
4.5
3
30
8
30
75
50
25
18
15
25
6
20
-
-
-
-
100
60
30
15
-
Typ. Max.
Thermal Resistance(°C/W)Output Power
(dBm)Linear Power
Gain(dB)
3rd Order IMDistortion(dBc)
Ta=25°C � : New product �� : Under development
GF-7
GF-7
GF-21
GF-21
GF-7
GF-21
GF-21
GF-7
GF-50
GF-50
GF-50
GF-50
GF-50
GF-50
GF-50
GF-50
GF-55
GF-55
GF-55
GD-27
GD-27
GD-27
GD-27
GF-17
GF-17
GF-17
GF-17
GD-27
4
GF-7 GF-21
GF-50
GF-38GF-17
GF-51
GF-47
GF-55GF-49
INTERNALLINTERNALLY MAY MATCHED GaAs FET SERIES FOR L/S BAND HIGH POWER AMPLIFIERSTCHED GaAs FET SERIES FOR L/S BAND HIGH POWER AMPLIFIERSINTERNALLY MATCHED GaAs FET SERIES FOR L/S BAND HIGH POWER AMPLIFIERS
✽: Communication gradeTa=25°C
� : New product
GD-4 GD-9
GD-16 GD-26GD-27
MGFC36V3436
MGFC39V3436
MGFC42V3436
MGFC44V3436
MGFC45V3436A
MGFL45V1920A
MGFL48V1920
MGFS44V2735
MGFS45A2527B
MGFS45V2123A
MGFS45V2325A
MGFS45V2527A
MGFS45V2735
MGFS48B2122
MGFS48V2527
MGFS52BN2122A�
35
38
41.5
43
44
44
-
43
44
44
44
44
44
-
-
-
37
39.5
42.5
44
45
45
-
44
45
45
45
45
45
-
-
-
-
-
-
-
-
-
47
-
-
-
-
-
-
47
47
50.8
11
10
12
11
11
12
10
11
11
11
11
11
11
11
9
11
-42
-42
-42
-42
-42
-42
-
-42
-42
-42
-42
-42
-42
-
-
-
-45
-45
-45
-45
-45
-45
-
-45
-45
-45
-45
-45
-45
-
-
-
32
32
37
36
36
45
45
36
40
45
45
45
36
48
45
48
3.4~3.6
3.4~3.6
3.4~3.6
3.4~3.6
3.4~3.6
1.9~2.0
1.9~2.0
2.7~3.5
2.5~2.7
2.1~2.3
2.3~2.5
2.5~2.7
2.7~3.5
2.17
2.5~2.7
2.17
Min. Typ.
Output Power(dBm)
Linear PowerGain(dB)
Min. Typ.
Power Added Efficiency(%)
Frequency(GHz)
10
10
10
10
10
10
12
10
10
10
10
10
10
12
12
12
Drain-Source Voltage(V)
1.2
2.4
4.5
6.4
8
6.5
4
6.4
6.5
6.5
6.5
6.5
8
2
4
4
GF-8
GF-8
GF-18
GF-38
GF-38
GF-51
GF-47
GF-38
GF-51
GF-51
GF-51
GF-51
GF-38
GF-47
GF-47
GF-49
Drain Current(A)
PackageOutlineType Number
Output Power at 1dB GainCompression(dBm)
3rd Order IMDistortion(dBc)
5
3
-
-
0.8
-
1
1
-
-
-
-
0.8
1
1
0.55
6
3.5
1.9
1.2
1
1.5
1.4
1.2
1.4
1.5
1.5
1.5
1
1.2
1.4
0.8
Typ. Max.
Thermal Resistance(°C/W)
GD-30
P
ROD
UCT
LIS
T
5
INTERNALLY MATCHED GaAs FET SERIES FOR C BAND HIGH POWER AMPLIFIERSINTERNALLY MATCHED GaAs FET SERIES FOR C BAND HIGH POWER AMPLIFIERS
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