February 2012 Doc ID 13449 Rev 2 1/18 18 ST8R00 Micropower 1 A synchronous step-up DC-DC converter Features ■ Output voltage adjustable from 6 V to 12 V ■ Output voltage accuracy: ± 2% ■ Output current up to 1 A ■ Low ripple voltage: 5 mV (typ.) ■ Synchronous rectification ■ High 90% efficiency: V O = 9 V (typ.) ■ Few external components ■ Thermal shutdown protection ■ Very small DFN8 (4 x 4 mm) package Description The ST8R00 is a synchronous PWM step-up DC- DC converter. The device is able to provide an output voltage in the range of 6 to 12 V with an input voltage from 4 to 6 V. The high switching frequency (1.7 MHz) permits the use of tiny surface-mount components. In addition to the resistor divider to set the output voltage value, only an inductor and two capacitors are required. Moreover, a low output ripple is guaranteed by the current mode PWM topology and by the use of low ESR SMD ceramic capacitors. The device is available in a very small DFN8 (4 x 4 mm) package. DFN8 4 x 4 mm Table 1. Device summary Part number Order code Output voltage ST8R00 ST8R00WPUR ADJ www.st.com
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Micropower 1 A synchronous step-up DC-DC converter · 2021. 3. 26. · February 2012 Doc ID 13449 Rev 2 1/18 18 ST8R00 Micropower 1 A synchronous step-up DC-DC converter Features
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February 2012 Doc ID 13449 Rev 2 1/18
18
ST8R00
Micropower 1 A synchronous step-up DC-DC converter
Features■ Output voltage adjustable from 6 V to 12 V
■ Output voltage accuracy: ± 2%
■ Output current up to 1 A
■ Low ripple voltage: 5 mV (typ.)
■ Synchronous rectification
■ High 90% efficiency: VO = 9 V (typ.)
■ Few external components
■ Thermal shutdown protection
■ Very small DFN8 (4 x 4 mm) package
DescriptionThe ST8R00 is a synchronous PWM step-up DC-DC converter. The device is able to provide an output voltage in the range of 6 to 12 V with an input voltage from 4 to 6 V. The high switching frequency (1.7 MHz) permits the use of tiny surface-mount components. In addition to the resistor divider to set the output voltage value, only an inductor and two capacitors are required. Moreover, a low output ripple is guaranteed by the current mode PWM topology and by the use of low ESR SMD ceramic capacitors. The device is available in a very small DFN8 (4 x 4 mm) package.
6 INHInhibit. Connecting the pin to a voltage higher than 2 V = device ON. Connecting the pin to a voltage lower than 0.8 V = device OFF, resulting in no current flow to the load
7 HV Trimming (floating or connected to GND)
8 OUT Output voltage
EXP pad GND Exposed pad. Must be connected to GND
ST8R00 Typical application circuit
Doc ID 13449 Rev 2 5/18
3 Typical application circuit
Figure 3. Application circuit
R1
R2
INHOUT
VO
L=4.7µH
IN LX
FB
GND PGND
VI
CI=10µF CO=10µF
ST8R00R1
R2
INHOUT
VO
L=4.7µH
IN LX
FB
GND PGND
VI
CI=10µF CO=10µF
ST8R00
Maximum ratings ST8R00
6/18 Doc ID 13449 Rev 2
4 Maximum ratings
Table 3. Absolute maximum ratings
Symbol Parameter Value Unit
VO Output voltage 16 V
VI Input voltage 6 V
VINH Inhibit voltage 6 V
VLX LX pin voltage 16 V
ILX LX pin output current Internally limited
TSTG Storage temperature range -50 to 150 °C
TOP Operating junction temperature range -25 to 125 °C
Table 4. Thermal Data
Symbol Parameter Value Unit
RthJC Thermal resistance junction-case 10 °C/W
RthJA Thermal resistance junction-ambient 50 °C/W
Table 5. ESD Performance
Symbol Parameter Test conditions Value Unit
ESD ESD protection voltage HBM 4 KV
ESD ESD protection voltage MM 500 V
ST8R00 Electrical characteristics
Doc ID 13449 Rev 2 7/18
5 Electrical characteristics
VI = 5 V, VINH = 2 V, IO = 100 mA, TJ = - 25 °C to 125 °C, CI = CO = 10 µF(X7R), L = 4.7 µH unless otherwise specified.
Table 6. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
VO Output voltage (1) 6 12 V
VSTART-UP Start-up voltage IO = 400mA, VI rising 3 3.5 V
VI Input voltage range 4 6 V
VFB Feedback voltage IO = 50mA 1.195 1.22 1.245 V
VFB_OFF Feedback voltage IO = 0, VINH = 0 0 V
IFB Feedback current VFB = 0, VINH = 2V 600 nA
ISUPPLY Supply currentTo be measured at VI, VO = 7V, no load
10 mA
RDSON_N Internal N channel RDSON ILX = 400mA 300mΩ
Figure 16. Internal leakage current vs. temperature (VI = VINH = 5 V)
Figure 17. Internal leakage current vs. temperature (VI = 5 V)
Figure 18. NMOS switch on resistance vs. temperature
Figure 19. PMOS switch on resistance vs. temperature
Figure 20. Efficiency vs. output current(L = 10 µH)
Figure 21. Efficiency vs. output current
00.010.020.030.040.050.060.070.080.090.1
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
I LX
(lea
k)[m
A]
VI=VINH=5V, VFB=2V, VLX=4V, No Inductor
00.010.020.030.040.050.060.070.080.090.1
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
I LX
(lea
k)[m
A]
VI=VINH=5V, VFB=2V, VLX=4V, No Inductor
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
I LX
(lea
k)[u
A]
VI=5 , VINH=GND, VFB=2V, VLX=4V, No Inductor
-0.1
0
0.1
0.2
0.3
0.4
0.5
0.6
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
I LX
(lea
k)[u
A]
VI=5 , VINH=GND, VFB=2V, VLX=4V, No Inductor
0
100
200
300
400
500
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
RD
SO
N-N
[mΩ
]
VI=5V
0
100
200
300
400
500
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
RD
SO
N-N
[mΩ
]
VI=5V
0
100
200
300
400
500
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
RD
SO
N-P
[mΩ
]
VI=5V
0
100
200
300
400
500
-75 -50 -25 0 25 50 75 100 125 150 175
T [°C]
RD
SO
N-P
[mΩ
]
VI=5V
0.000.100.200.300.400.500.600.700.800.901.00
0 100 200 300 400 500 600 700 800 900 1000IO [mA]
Eff
icie
ncy
[%
]
VI= VINH=5V, L=10µH, IO= from 0A to 1A
VO@7V
0.000.100.200.300.400.500.600.700.800.901.00
0 100 200 300 400 500 600 700 800 900 1000IO [mA]
Eff
icie
ncy
[%
]
VI= VINH=5V, L=10µH, IO= from 0A to 1A
VO@7V
0.000.100.200.300.400.500.600.700.800.901.00
0 100 200 300 400 500 600 700 800 900 1000IO [mA]
Eff
icie
ncy
[%
]
VI= VINH=5V, IO=from 0A to 1A
VO@7V
0.000.100.200.300.400.500.600.700.800.901.00
0 100 200 300 400 500 600 700 800 900 1000IO [mA]
Eff
icie
ncy
[%
]
VI= VINH=5V, IO=from 0A to 1A
VO@7V
ST8R00 Typical characteristics
Doc ID 13449 Rev 2 11/18
Figure 22. Output voltage vs. input voltage Figure 23. Maximum output current vs. output voltage
Figure 24. Inductor current Figure 25. Load transient
VI=5V,VINH= 2V, L=4.7µH, CI=CO=10µF, No Load, T=25°C
VI=VINH=5V, IO=from 10mA to 500mA
Figure 26. Line transient Figure 27. INH transient
VI=VINH from 4V to 5.5V, IO=500mA, 20µs
VI=6, VINH from 0V to 2V, IO=1A
VI=VINH from 0 to 6V, IO=400mA0.00
2.00
4.00
6.00
8.00
10.00
12.00
0 1 2 3 4 5 6
VI [V]
VO
[V]
125°C
25°C
0°C
-25°C
VI=VINH from 0 to 6V, IO=400mA0.00
2.00
4.00
6.00
8.00
10.00
12.00
0 1 2 3 4 5 6
VI [V]
VO
[V]
125°C
25°C
0°C
-25°C
VI=VINH=5VPcost=6W
OPERATIVE ZONE
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5
VO [V]
I O[A
]
PMAX=6W
VI=VINH=5VPcost=6W
OPERATIVE ZONE
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
5.5 6.5 7.5 8.5 9.5 10.5 11.5 12.5
VO [V]
I O[A
]
PMAX=6W
ILX
VLX VO
IO
VI
VO
VINH
VO
IO
Typical characteristics ST8R00
12/18 Doc ID 13449 Rev 2
Figure 28. Inrush current
VI=4.5, VO=7V, VINH from 0V to 3V, IO=0, L=10µH
ST8R00 Package mechanical data
Doc ID 13449 Rev 2 13/18
7 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
Figure 29. DFN8 (4 x 4) footprint recommended data
Package mechanical data ST8R00
16/18 Doc ID 13449 Rev 2
Dim.mm. inch.
Min. Typ. Max. Min. Typ. Max.
A 330 12.992
C 12.8 13.2 0.504 0.519
D 20.2 0.795
N 99 101 3.898 3.976
T 14.4 0.567
Ao 4.35 0.171
Bo 4.35 0.171
Ko 1.1 0.043
Po 4 0.157
P 8 0.315
Tape & Reel QFNxx/DFNxx (4x4) Mechanical Data
ST8R00 Revision history
Doc ID 13449 Rev 2 17/18
8 Revision history
Table 7. Document revision history
Date Revision Changes
24-May-2007 1 Initial release.
01-Feb-2012 2Modified: Figure 8 on page 8.Removed: Table 6, Figures 24, 25 and 26.
ST8R00
18/18 Doc ID 13449 Rev 2
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