Page 1
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 1
ROCHESTER INSTITUTE OF TEHNOLOGYMICROELECTRONIC ENGINEERING
October 31, 2016 MEM_Actuators.ppt
Microelectromechanical Systems (MEMS)
Actuators
Dr. Lynn Fuller and Dr. Ivan Puchades
Webpage: http://people.rit.edu/lffeeeMicroelectronic Engineering
Rochester Institute of Technology82 Lomb Memorial Drive
Rochester, NY 14623-5604Tel (585) 475-2035
Email: [email protected] Dept Webpage: http://www.rit.edu/kgcoe/microelectronic
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 2
INTRODUCTION
Actuators
ThermalTwo beam heated cantileverPolyimide on HeatersBimetalicheaters on diaphragms
ElectrostaticCapacitor Plate DriveComb Drive
OtherElectromagneticPeizoelectric
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 3
OUTLINE
Polycrystalline Silicon Thermal ActuatorsChevron ActuatorsHeated Diaphragm ActuatorsHeated Polyimide Cantilever MirrorsPolyimide Thermal Actuators
A Walking Silicon Micro-RobotThermal Mirrors
Electrostatic ForceDigital Light Projection
Electrostatic Impact-Drive MicroactuatorShuffle Motor
Electrostatic Comb DriveMagnetic Actuators on a Diaphragm
Page 4
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 4
POLYCRYSTALLINE SILICON THERMAL ACTUATORS
Polycrystalline Silicon Thermal Actuators Integrated with Photodetector
Position Sensors
Kevin Munger
Page 5
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 5
POLYCRYSTALLINE SILICON THERMAL ACTUATORS
No current flow
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 6
POLYCRYSTALLINE SILICON THERMAL ACTUATORS
Current flow
Page 7
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 7
SELECTED MATERIAL PROPERTIES
Thermal Young’s Thermal DensityExpansion Modulus Conductivityppm/°C 1012 dyne/cm2 w/cmK gm/cm3
Silicone Elastomers 275-300 Unfilled Epoxies 100-200 0.015Filled Epoxies 50-125Aluminum 20-25 0.68 2.36 2.7Copper 15-20 1.20 3.98 8.96Gold 14.2 0.785 3.19 19.3 Silicon (single crystal) 2.4 1.9 1.9 2.33Poly Silicon 2.4 1.5 1.5 2.33Inconel 2.4Nickel-Iron 1.22Alumina Ceramic 6.3Borosilicate Glass 5.0Silicon Dioxide 0.55 0.73 0.014 2.19Silicon Nitride 0.8 3.85 0.185 3.44Diamond 1.0 11 20Air - - 0.00026Water - - 0.0061
10 dyne/cm2 = 1 newton/m2
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 8
THERMAL EXPANSION
1. How much will a 500 um long bar of aluminum expand if it is
heated 200 C above ambient?
DL/L = 22 ppm/C
= 22 x 200 = 4400 ppm = 4400E-6
DL = 4400E-6 x 500 um = 2.2 um
2. If the hot arm on a 200µm Si actuator is 400C hotter than the cold
arm how much longer will it be ?
DL/L = 2.4 ppm/C
= 2.4 x 400 = 932 ppm = 960E-6
DL = 960E-6 x 200 um = 0.192 um
Page 9
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 9
FINITE ELEMENT ANALYSIS OF THERMAL BENDING
Small arm 400 C, 10um X 200 um
Large arm 0 C, 30 um x 200 um
Maximum Displacement = 0.12 um
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 10
FEA SIMULATION
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 11
INTEGRATION OF PHOTODIODE AND MEMS
December 2001Kevin Munger. joinedIBM Burlington, VT
Maximum Deflection 9 µm at 30 µw
162,000 cycles, 6 msec.,
Thermal Actuator with
Integrated Photodiode
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 12
POLYCRYSTALLINE SILICON THERMAL ACTUATORS
Summary
These devices give large mechanical motion
on the order of several to few 10’s of micrometers
These devices are analog
Integrated with analog photodiode position detection
can give feedback for accurate position
Cycle fatigue seems to be infinite
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 13
CHEVRON ACTUATOR
1000um10° Angle
Thermal Expansion for Si is 2.33E-6/°C
Current flow causes heating and movement
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 14
CHEVRON ACTUATOR
1000um10° Angle
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 15
MODIFIED BULK PROCESS FOR MEMS CLASS 2004-06
Thermopile
Inductor
Accelerometer
Pressure Sensor
Speaker
Movie
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 16
DIAPHRAGM
Diaphragm:
Displacement
Uniform Pressure (P)
Radius (R)
diaphragm
thickness ()
Displacement (y)
E = Young’s Modulus, = Poisson’s Ratio
for Aluminum =0.35
Equation for deflection at center of diaphragm
y = 3PR4[(1/)2-1]
16E(1/)23= (249.979)PR4[(1/)2-1]
E(1/)23
*The second equation corrects all units
assuming that pressure is mmHg,
radius and diaphragm is m, Young’s
Modulus is dynes/cm2, and the
calculated displacement found is m.
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 17
SELECTED MATERIAL PROPERTIES
Thermal Young’s Thermal DensityExpansion Modulus Conductivityppm/°C 1012 dyne/cm2 w/cmK gm/cm3
Silicone Elastomers 275-300 Unfilled Epoxies 100-200 0.015Filled Epoxies 50-125Aluminum 20-25 0.68 2.36 2.7Copper 15-20 1.20 3.98 8.96Gold 14.2 0.785 3.19 19.3 Silicon (single crystal) 2.4 1.9 1.9 2.33Poly Silicon 2.4 1.5 1.5 2.33Inconel 2.4Nickel-Iron 1.22Alumina Ceramic 6.3Borosilicate Glass 5.0Silicon Dioxide 0.55 0.73 0.014 2.19Silicon Nitride 0.8 3.85 0.185 3.44Diamond 1.0 11 20Air - - 0.00026Water - - 0.0061
10 dyne/cm2 = 1 newton/m2
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 18
CALCULATOR FOR DIAPHRAGM DEFLECTIONS
Rochester Institute of Technology 5-Apr-06
Dr. Lynn Fuller Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623
Deflection Ymax = 0.0151 P L4(1-Nu2)/EH3 Ymax = 0.17 µm
P = Pressure P = 15 lbs/in2
L = Length of side of square diaphragm L = 1000 µm
E = Youngs Modulus E = 1.90E+11 N/m2
Nu = Poissons Ratio Nu = 0.32
H = Diaphragm Thickness H = 35 µm
P = 1.03E+05 Pascal
Stress = 0.3 P (L/H)2 (at center of each edge) Stress = 2.53E+07 Pascal
P = Pressure Yield Strength = 1.20E+10 Pascal
L = Square Diaphragm Side Length
H = Diaphragm Thickness
Capacitance = eoer Area/d C = 7.97E-11 F
eo = Permitivitty of free space = 8.85E-14 F/cm
er = relative permitivitty = 1 for air Area = 9.00E-02 cm2
Area = area of plates x number of plates N = 1
d = distance between plates d = 1 µm
If round plates, Diameter = 0 µm
If square plates, Side = 3000 µm
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 19
CALCULATOR FOR DIAPHRAGM DEFLECTIONS
Rochester Institute of Technology 11-Feb-14
Dr. Lynn Fuller Microelectronic Engineering, 82 Lomb Memorial Dr., Rochester, NY 14623
To use this spread sheet enter values in the white boxes. The rest of the sheet is protected and should not be
changed unless you are sure of the consequences. The results are displayed in the purple boxes.
Diaphragm
Deflection Ymax = 0.0151 P L4(1-Nu2)/EH3 Ymax = 9.44E-03 µm
P = Pressure P = 1.50E-05 lbs/in2
L = Length of side of square diaphragm L = 20000 µm
E = Youngs Modulus E = 1.90E+11 N/m2
Nu = Poissons Ratio Nu = 0.32
H = Diaphragm Thickness H = 50 µm
P = 1.03E-01 Pascal
Diaphragm
Stress = 0.3 P (L/H)2 (at center of each edge) Stress = 4.96E+03 Pascal
P = Pressure Yield Strength = 1.20E+10 Pascal
L = Square Diaphragm Side Length
H = Diaphragm Thickness 1N/m2 = 1Pascal = 10dyne/cm2
Two Parallel Plates
Capacitance = eoer Area/d C = 5.5549E-11 F
eo = Permitivitty of free space = 8.85E-14 F/cm
er = relative permitivitty = 1 for air Area = 3.14E+00 cm2
Area = area of plates x number of plates N = 1
d = distance between plates d = 50.026 µm
If round plates, Diameter = 20000 µm
If square plates, Side = 0 µm
Capacitance Change for Ymax Deflection = 1.05E-14 F
Two Parallel Plates
Electrostatic Force= eoer Area V2/2d2 Felec = 1.39E-05 N
V = applied voltage V = 5 volts
Single Plate
Pressure Force = Pressure x Area Fpress = 4.14E-05 N
Single Plate with a Coil in a Magnetic Field Approximate Equation 1
Electromagnetic Force = I L B Fmagnetic = 1.88E-03 N
Assuming a constant field strength B from a Rmax of Coil = 1000 µm
permanent magnet then, Lorentz Force = I L B Rmin of Coil = 500 µm
where I is the current in a coil of length L, Number of turns (N) = 40 turns
L =~ 2 pi Rave x N, Rave = (Rmax+Rmin)/2 Length of coil (L) = 1.88E-01 m
Current (I) = 0.02 amperes
Magnet Field Strength (B) = 0.5 Tesla
Single Plate with a Coil in a Magnetic Field Approximate Equation 2
Electromagnetic Force =
distance between magnet and coil = 300 µm
radius of coil = 750 µm
radius of magnet = 2000 µm
Fmagnetic = 3.70E+00 N
Cheng eq. 6-196
Resonant Frequency of Round or Square Diaphragm =
Dd is diameter or length of diaphragm Dd = 3 mm
Ey is youngs modulus Ey = 1.9 x1012 dynes/cm2
Td is diaphragm thickness Td = 20 µm
Nu is Poisons ratio Nu = 0.32
Rho is volumn density Rho = 2.33 gm/cm3
fo is 1st resonant frequency for round fo = 39559 Hz
fo is 1st resonant frequency for square fo = 35999 Hz
Diaphragm Volumn = 0.0001413 cm-3
Diaphragm Mass = 3.E-04 gm
AddedBio Mass = 4 gm x 10-9
Delta Rho = 2.83086E-05 gm/cm3
Delta fo = 0 Hz
Resistive Bridge Output
Film Sheet Resistance Rhos = 61 ohms/sq
Resistor Length L = 350 um
Resistor Width W = 50 um
Nominal Resistor Value R=Rs L/W R = 427 ohms
Strain = Stress/Youngs Modulus e = 0.000 %
Deflection for given pressure
Stress at edge of diaphragm
Electrostatic equivalent pressure
Magnetic equivalent pressure
Resonant frequency
Piezoresistive bridge calculations
Page 20
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 20
ANSYS FINITE ELEMENT ANALYSIS
Regular Si Diaphragm Corrugated Diaphragm
Layer 2: 1.5mm x 1.5mm Polysilicon 1μm thick
2mm x 2mm diaphragm 30µm thick, 50 psi applied
Rob Manley, 2005
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 21
DIAPHRAGM DEFORMATION MOVIE
Rob Manley, 2005
200µm
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 22
PICTURES OF WAFER AFTER KOH ETCH
50 µm in 57 min ~.877 µm/min
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 23
DIAPHRAGM THICKNESS USING OPTICAL MICROSCOPE
20% KOH Etch, @ 72 C, 10 Hrs.
31 µm500 µm
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 24
SQUARE DIAPHRAGM MOVIE
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 25
MEMS THERMAL ACTUATOR AND POSITION SENSOR
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 26
THERMAL ACTUATED VERTICAL DISPLACEMENT
Veeco NT1100Increase heater currentMeasure z-displacement and Vout
Ih e a t (m A ) V o u t (m V ) Z -d e f le c t io n (u m ) v e c c o
0 1 1 .8 -4
2 0 1 1 .3 -2 .7 5
3 0 1 0 .6 -1 .6
4 0 8 .7 -0 .6 5
5 0 6 .2 0 .3 5
6 0 1 .3 2 .6 5
6 6 -1 7 .4 1 7 .5
7 0 -2 1 .7 2 2 .2
y = - 1 .3 4 1 9 x + 7 .0 0 2 8
R2 = 0 .9 9 1 8
- 1 5
- 1 0
- 5
0
5
1 0
1 5
- 5 0 5 1 0
Z - d e fle c tio n (µm )
Vo
ut
(m
V)
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 27
VISCOCITY SENSOR JOURNAL PUBLICATION AND PATENT
Page 28
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 28
SELECTED MATERIAL PROPERTIES
Thermal Young’s Thermal DensityExpansion Modulus Conductivityppm/°C 1012 dyne/cm2 w/cmK gm/cm3
Silicone Elastomers 275-300 Unfilled Epoxies 100-200 0.015Filled Epoxies 50-125Aluminum 20-25 0.68 2.36 2.7Copper 15-20 1.20 3.98 8.96Gold 14.2 0.785 3.19 19.3 Silicon (single crystal) 2.4 1.9 1.9 2.33Poly Silicon 2.4 1.5 1.5 2.33Inconel 2.4Nickel-Iron 1.22Alumina Ceramic 6.3Borosilicate Glass 5.0Silicon Dioxide 0.55 0.73 0.014 2.19Silicon Nitride 0.8 3.85 0.185 3.44Diamond 1.0 11 20Air - - 0.00026Water - - 0.0061
10 dyne/cm2 = 1 newton/m2
Page 29
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 29
POLYIMIDE ON HEATER
Movie
Page 30
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 30
A WALKING SILICON MICRO-ROBOT
Page 31
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 31
A WALKING SILICON MICRO-ROBOT
http://www.s3.kth.se/mst/staff/thorbjorne.html
Professor Goran Stemme
Kungliga Tekniska Hogskolan
Stockholm, Sweden
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© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 32
A WALKING SILICON MICRO-ROBOT
Page 33
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 33
A WALKING SILICON MICRO-ROBOT
Page 34
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 34
A WALKING SILICON MICRO-ROBOT
Page 35
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 35
A WALKING SILICON MICRO-ROBOT
Page 36
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 36
A WALKING SILICON MICRO-ROBOT
Movie
Page 37
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 37
THERMALLY ACTUATED MICRO MIRROR
Page 38
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 38
CAPACITIVE ELECTROSTATIC FORCE
F
++++++++
- - - - - - -
The energy stored in a capacitorcan be equated to the force timesdistance between the plates
W = Fd or F = W/d
2d2
eo e r AV2F =
d
area A
Energy stored in a parallel plate capacitor W
with area A and space between plates of d
W = 0.5 QV = 0.5 CV2
since Q = CV
d
e oe rAC =
e opermitivitty of free space = 8.85e-12 Farads/m
e r = relative permitivitty (for air e r = 1)
Page 39
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 39
ELECTROSTATIC FORCE EXAMPLE
Example: 100 µm by 100 µm parallel plates
space = 1 µm, voltage = 10 V
Find the force of attraction between the two plates
e oe r AV2
F =2d2
8.85e-(100e-6)(100e-6)(10)2
F =2(1e-6)2
F = 4.42e-6 newtons
Page 40
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 40
DIGITAL LIGHT PROJECTION SYSTEM
www.TI.com
Page 41
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 41
TI DLP - ELECTROSTATIC MIRRORS
www.TI.com
Torrisonal Mirrors Can Tilt
Along One Axis
Page 42
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 42
ELECTROSTATIC MIRROR
MOEMs - Micro Optical Electro Mechanical Systems
Lucent Technologies–Lambda Router (256 mirror fiber optic multiplexer)
Nested Torrisonal Mirrors Can Tilt Along Three Axis
Page 43
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 43
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
Page 44
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 44
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
Page 45
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 45
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
1. Actuator can generate high
power
2. Maintain a position precisely
3. Move a long distance.
Page 46
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 46
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
Page 47
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 47
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
Testing
Figure shows test resultsfor 1Hz actuation, each impactgives 20 nm displacement
Lifetime looks good. Testfor 1 month, 550 million collisions, no visible problems
Energy was supplied to actuator by wireless RF transmision
Page 48
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 48
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
Page 49
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 49
ELECTROSTATIC IMPACT-DRIVE MICROACTUATOR
Conclusion
A New type of actuator is described
Diven by electrostatic force
~15 nm per impact at 100 Volts
Speed of 2.7 um/sec at 200 Hz
Life greater than 550 million impacts
Page 50
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 50
MEMS SWITCH
Electrostatic actuation (V) pulls down contactor to make connection along the signal line.
V
Signal LineSignal Line
Signal Line Signal Line
Page 51
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 51
SWITCH CALCULATIONS PLUS DIMENSIONS
Each project has 5mm x 5mm layout space
Artur
Nigmatulin
2011
Page 52
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 52
AC MEMS SWITCH
Page 53
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 53
SHUFFLE MOTOR MOVIES
What actuation mechanism is this?
Movie Movie
Page 54
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 54
ELECTROSTATIC COMB DRIVE MICROACTUATORS
Electrostatic movement parallel to wafer surface
AnchorAnchor
Anchor
From Jay Zhao
Page 55
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 55
CALCULATION OF DISPLACEMENT VS VOLTAGE
t
L
d
movement
F = er eo t V2 / 2 d
Page 56
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 56
SPRING ELECTROSTATIC DRIVE & CAPACITIVE READ OUT
Anchor
C1
C2
C1
C2
Anchors
and Electrical Ground
Gnd
Page 57
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 57
PICTURES & MOVIES OF ELECTROSTATIC COMB DRIVE
Movies at www.sandia.gov
Page 58
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 58
PICTURES & MOVIES OF ELECTROSTATIC COMB DRIVE
MOVABLE MIRROR
Movies at www.sandia.gov
Page 59
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 59
MAGNETIC TORSIONAL MIRROR
W
Contact
L
Supporting arm
z
Bcoil
Bm
Figure 2: Cross sectional view labels with
variables.
Nz
BLW
Rz
IR
z
mmF
o
m
o
coilm
2
2/322
2
02
4
Metal contact
Topside Hole
Diaphragm
Figure 1: Top down CAD design of single axis
Torsional Mirror
Paper by Eric Harvey
Page 60
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 60
MAGNETIC FIELD
Bi
F
Page 61
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 61
DARTMOUTH COLLEGE MICROROBOTS
This SEM image shows the untethered scratch drive actuator (A) used for propulsion, and the cantilevered steering arm (B)which can be lowered to provide a turning pivot. The wavey lines the robot sits on are the insulated interdigitated electrode array which transmits power and control signals to the robot.
http://engineering.dartmouth.edu/microeng/robot05.html
Page 62
© October 31, 2016 Dr. Lynn Fuller
Rochester Institute of Technology
Microelectronic Engineering
MEMs –Actuators
Page 62
REFERENCES
1. “Microsensors,” Muller, Howe, Senturia, Smith and White, IEEE Press, NY, NY 1991.
2. “Sensor Technology and Devices,” Ristic, L.J., Artech House, London, 1994.
3. IEEE Journal of Microelectromechanical Systems4. “Electrostatic Impact-Drive Microactuator”, M.Mita, et.el.,
University of Tokyo, IEEE, 20015. “A walking Silicon Micro-Robot”, Thorbjorn Ebefors, et.el.,
Department of signals, sensors and Systems, Royal Institute of technology, Stockholm, Sweden, 10th Int. conference on solid-State Sensors and Actuators, Sendai Japan, June 7-10, 1999.
6. MEMs Wing Technology for a battery-Powered Ornithopter, T. Nick Pornsin-sirirak, Caltech Micromachining Laboratory, Pasadena, CA, 91125, IEEE, 2000.