METDA Corporation Shijiazhuang, Hebei Province , China
Jan 15, 2016
METDA Corporation
Shijiazhuang, Hebei Province , China
General Briefing
Headquarter Headquarter Research Center Research Center
34.3 h34.3 h㎡㎡
General Briefing
New Development Zone New Development Zone Industrial Production Base Industrial Production Base
66.6 h66.6 h㎡㎡
METDA Overview
• METDA is the International Marketing/Sales company of HSRI. The Holding Company-Hebei Semiconductor Research Institute (HSRI) of Micro Electronic Technology Development Application Corporation (METDA Corp.) was founded in 1956 with achievements of China’s first Transistor, first Silicon IC, first GaAs IC and first Semiconductor Laser.
• METDA has been serving our customers in wireless, fiber optics, aerospace, avionics, medical and satellite communication industries with high-performance, cost competitive and high reliable products.
• METDA is structured by 9 Specialized Divisions, 7 Research Departments, 5 Pilot Production Lines, 2 Research and Development Centers, 8 High-Tech Self-invested Corporations and Joint Ventures including several star companies like Bowei and Puxing.
• Overseas sales of METDA in 2013 is USD 26 million
Application Areas
RadarSatellite CommunicationsAerospace Communication stationOptical CommunicationsPublic Security
Product Offering
• GaAs and GaN MMIC & devices
• Silicon devices
• RF& Microwave Hybrid Integrated Circuits
• Microwave& Millimeter wave components, modules and subsystems
• Optoelectronic devices and modules
• MEMS devices and modules
• Packaging Solutions
GaAs Devices and MMIC
• The GaAs and GaN Division has won more than 100 National Technology Awards
• Main categories include GaAs/GaN MMIC Power Amplifier Chip, GaAs Power FET, GaAs MMIC Low Noise Amplifier Chip and GaAs Low Noise FET. Also includes T/R module solutions.
• Products are widely served in wireless communication and radar markets. Customized products can be offered
GaAs Products Range
GaAs MMIC
• Power Amplifiers
• Digital Phase Shifters
• Digital Attenuators
• Switches
• Limiters
• Digital True time Delay
• Power divider/ combination
• Multi-Functinal Chip
• Low Noise Amplifiers
FET
• Low Noise FETs
• Power FETs
• Internally Matched FETs
(1)LNAf: 1-40GHz
(2) Power Amplifierf: 1-40GHzPout: 20-42dBm
(3)Digital Phase Shifterf: 1-40GHzRMS: 2.5°Bits: 1、 4、 5、 6、 8
(4) Digital Attenuatorf: 1-40GHz
(5) Switchf: DC-40GHzPIN and FET
(6) Limiterf: 2-6G、 6-18G; C、
XLimiting Level: 15dBmMax Power: 43dBm(CW)
GaAs Microwave& mm wave MMIC
GaAs MMIC
1.2-1.6GHz
Gain: 24dB
Noise Figure: 1.0dB
P-1 : 4dBm
I/O VSWR: 2.0/2.0
+5V @ 20mA
2.2×1.8×0.1mm
5.0-6.0GHz
Gain: 21dB
Noise Figure: 1.2dB
P-1 : -1dBm
I/O VSWR: 1.8/1.5
+5V @ 8mA
2.7×1.5×0.1mm 3.2×1.25×0.1mm
40-46GHz
Gain: 20dB
Noise Figure: 3.5dB
P-1 : 0dBm
I/O VSWR: 2.0/1.6
+5V @ 6mA
Ultra Low Comsuption Low Noise Amplifier
GaAs MMIC
5-6GHz16W/24dB/38%
6-18GHz5W/17dB/18%
8-12GHz14W/20dB/40%
16-18GHz14W/16dB/25%
GaAs Power Amplifier MMIC
40-45.5GHz1W/14dB/18%
34-36GHz5W/15dB/20%
bandPout L band S Band C Band X Band Ku Band K Band Ka Band
6~18GHz
16W NC1185C-506
14W NC11139C-812 NC1176C-1618
12W NC1173C-2734NC1168C-812
NC1155C-8510NC1175C-1518
10W NC1148C-1314
8W NC1137C-5258 NC1145C-812 NC1147C-1517
6W NC11140C-1216 NC11118C-2224
5W NC1157C-2844 NC11108C-506 NC1159C-1215 NC11191C-3436 NC11120C-618
4W NC11151C-7785 NC1152C-1617 NC11112C-2022 NC11119C-2631 NC1186C-618
3W NC11132C-2127
NC11148C-1215 NC1199C-3436NC1128C-618NC1160C-618
2WNC1117C-2242
NC11131C-2127
NC1126C-812 NC11115C-1518 NC11107C-3436
1W NC1171C-1216 NC1172C-2426 NC1187C-506 NC1108C-8511 NC1189C-1318 NC11111C-1927NC1188C-3436NC1141C-3436
NC1133C-618
0.5W NC1170C-1216NC1114C-2945NC1121C-203
NC11149C-506 NC1144C-812 NC11148C-1215NC1123C-2440
NC11145C-3337
0.2W NC11129C-1319 NC1137C-2227 NC11114C-4854 NC11138C-812NC11143C-1317NC1140C-1418
NC1198C-3238 NC11141C-618
0.1W NC1104C-5258NC1102C-812NC1129C-812
NC1177C-1214 NC11147C-1230 NC1122C-1918 NC11142C-520
GaAs Power Amplifier MMIC series
1.6-1.7GHz25W/14dB/45%
2.2-2.3GHz25W/13dB/50%
5-6GHz80W/8dB/35%
7.7-8.5GHz60W/7dB/35%
8.8-10GHz35W/7.5dB/40%
14-14.5GHz18W/5dB/23%
GaAs Internally Matched Power Transistor
GaAs Internally Matched Transistors
T/R Chipset Series:
5.2-5.8GHz GaAs MMIC 2-6GHz GaAs MMIC 8.5-10.5GHz GaAs MMIC 8-12GHz GaAs MMIC 6-18GHz GaAs MMIC 15-18GHz GaAs MMIC …34-36GHz GaAs MMIC 16 categories from L to Ka Band
Every T/R Chipset contains:
Limiter
LNA
Switch
Digital Attenuator
Digital Phase Shifter
Driving Amplifier
Power Amplifier
Driver
GaAs T/R Chipset
GaN Products Range
•Capability of simulation for Epitaxial Material strucutre, device str
ucture, circuit design of GaN power devices/MMIC within 100 GHz.
•High accurate GaN device model is built matched to the processing
platform which forms the model store for GaN Active, Passive device.
•Already shifted from 3 inches to 4 inches at 2nd Quarter of 2014.
2.7-3.5GHz50W/25dB/45%
2-18GHz3W/7dB/15%
6-18GHz10W/16dB/20%
8.0-12 GHz50W/23dB/40%
16-18GHz30W/20dB/35%
34-36GHz13W/14dB/20%
GaN Power MMIC Product Series
90-96GHz0.5W/8dB/10%
0.9-2GHz100W/11dB/45%
1.14-1.24GHz65W/15dB/60%
2.7-3.5 GHz150W/12dB/45%
5-6GHz100W/8dB/40%
9-10GHz130W/7dB/36%
1.8-2.3GHz30W/13dB/60%
4.4-5GHz120W/10dB/45%
6.4-7.2GHz120W/12dB/55%
GaN Power Transistor Series Products
LNA
3mm MMIC Product
SPST Switch Balance Mixer
RF/LO frequency:86-100GHz
IF frequency:DC-4GHz
InP Processing
SPDT Switch
90-96GHz
Insertion Loss
1.8dB
VSWR 2.0:1
Isolation 30dB
Speed 5ns
90-96GHz
I/O VSWR2.0/2.5
Gain 18dB
P-1 : 2dBm
Noise Figure 4.5dB
90-96GHz
Insertion Loss
2.5dB
VSWR 2.0:1
Isolation 25dB
Speed 5ns
Silicon devices
• The Silicon Research and Development facility of HSRI provides different ranges of Silicon Transistors and Hybrid Integrated Circuit.
• Microwave Power Transistors include Continuous-wave Transistors, Linear Power Transistors, Power Pulsed Transistors and LDMOS Power Transistors.
• The facility has also built an advanced 4″1um production line for customization offering.
• Products are widely served in Solid State Array Radars, Microwave Communications and Telemetry areas; low noise chips and low power LDMOS chips are widely served in TV receiving systems while optic-diodes are used in security systems of airports and stations.
RF& Microwave Hybrid Integrated Circuits
• The Mini-Packaged Microwave/RF circuit centre of HSRI has developed into the largest Microwave/RF circuit supplier in China.
• Main categories include Crystal Oscillator, Surface mount RF/Microwave cost-effective components and High Reliable RF/Microwave components. Customized sub-system& integrated assemblies can be offered.
• Products are widely served in communication system, such as PHS, GSM, GSM-edge, CDMA and WCDMA&WLNA system. Moreover, those high reliable components are well equipped in aerospace& avionics industries with frequency range up to 40 GHz.
Filters
Oscillators
RF/Microwave Amplifiers
VCO and Integrated PLS
RF/Microwave Mini Integrated Circuit
RF& Microwave Hybrid Integrated Circuits
Frequency ranges from P band to X band, power ranges from 10W to 1500W, carrier and metal package can be selected.
Typical P band Parameter Typical X band Parameter Frequency: 100~400MHz Frequency: 8.5~10.5GHz
Insertion Loss: 0.3dB Insertion Loss: 0.7dB Isolation: 50dB Isolation: 30dB Peak Power: 1500W Peak Power: 20W(10%Duty Cycle, Pulse width 0.1ms) (40% Duty Cycle, Pulse width
6ms)
New Update: TR Power Switches
RF& Microwave Hybrid Integrated Circuits
Typical FBAR Structure
FBAR: Film Bulk Acoustic Resonator
Performance Dielectric Filter SAW Filter FBAR Filter
Frequency 1MHz-10GHz 10MHz-3GHz 500MHz-10GHz
Insertion Loss 1-2dB 2.5-4dB 1-1.5dB
Rejection <40dB <45dB <50dB
Temp Figure -10~ +10ppm -35~ -95ppm -25~ -30ppm
Quality Q 300-700 200-400 >1000
Power Capacity >>1W <1W >1W
Anti-Static Good Normal Good
Dimension Large Small Minimum
Intergration No No Yes
Dielectric Filter SAW Filter FBAR Filter
FBAR Chip Filter:
RF& Microwave Hybrid Integrated Circuits
1st Generation Silicon Filter VS. Traditional Cavity Filter
Vertical Hole MEMS Filter (2-50GHz)
With vertical hole of silicon cavity structure, we achieved the 2nd generation MEMS Filter by decreasing the dimension to 1/3, and increasing the rejection from 60dB to 80dB.
RF& Microwave Hybrid Integrated Circuits
1st Generation Silicon Filter VS. 2nd Generation Silicon Filter
Microwave& Millimeter-wave components, modules and subsystems• The Microwave& Millimeter-wave Division has been providing high
reliable Microwave and Millimeter-wave modules and subsystems to the market since 1960s.
• The division offers Microwave and Millimeter-wave T/R Modules, Power Modules and subsystem, single/multi channel T/R subsystem, Control Circuits and Frequency Source subsystem.
• Products are widely served in Radar and Satellite market.
30mm×30mm×8mm, 15gGain: >30dB
Psat: >39dBm
Power Fluctuation: <±0.3dB
P.A.E: >25%
C band Chip T/R module
20×20×6mmFrequency: 8.6GHz-9.6GHz;Power Output: 2 W;Rx Gain: 23dB;Rx Noise Figure: 4dB;
Microwave& Millimeter-wave components, modules and subsystems
X band Chip T/R module
6-18 GHz wideband Minimized T/R module
Frequency: 6GHz~18GHz Tx Power Output: 4WRx Gain: 23dBRx Noise Figure: 5dB
80mm×50mm×7.4mm
34-36GHz 8 Channels T/R Module
40mm×35mm×4.3mmTx Power Output: 26dBm
Rx Gain: 16dB
Rx Noise Figure: 4.2dB
Microwave& Millimeter-wave components, modules and subsystems
功分
移相 SP3T 负载0.5*0.4
驱放 功放
数控衰减 LNA 限幅
环形器 天线
发射/接收
移相 SP3T 负载0.5*0.4
驱放 功放
数控衰减 LNA 限幅
环形器 天线
AMP
AMP
波控电路(串并转换和逻辑控制)
电源
Frequency: 8~ 12GHz;Psat:≥ 10W (CW) ;Tx Efficiency:≥ 20%;Max Input Power:≥ 10W;
80×30×8mm3
Microwave& Millimeter-wave components, modules and subsystems
X band Minimized Chip T/R module
Millimeter Wave T/R module solution
6 chips: 0.4W/ Gain 30dB(33~37GHz) 5 bits PHS ATTEN
5 chips: 0.4W(33~37GHz) 5 bits PHS ATTEN
3 chips: 0.2W/ Gain 30dB(33~37GHz) 5 bits PHS ATTEN
2 chips: 24dBm/ Gain 15dB(19~23GHz) 6 Bits PHS
2 chips: 24dBm(19~23GHz)
Microwave& Millimeter-wave components, modules and subsystems
Optoelectronic devices and modules• The research and development center of Optoelectronic division engages in
the opto-semiconductor technologies and the commercialization of solid state lighting solutions, across both visible and non-visible spectrums.
• Core products include High Power Semiconductor Laser Arrays, Pulse Laser Arrays, High Power LED and AlGaAs/GaAs Quantum Well Infrared Photodetector ( QWIP ).
• Products have been widely served in fiber optics, navigation, telemetry, avionics, guidance, identification and lighting industries.
MEMS devices and modules
• The MEMS division is one of the earliest and largest MEMS Industrial Research Centers in China.
• Products include Micro Inertial Devices, Microsensors, RF MEMS Devices and Opto-MEMS Devices
• Products are applicable in satellite, aircraft, attitude control of carborne and radar antenna, navigation and guidance markets.
MSG Series Gyroscope
MSA Series Accelerometer
MPA Series Accelerometer
MVS Series Vibration Sensor
MFS Series Air Flow Sensor
SiMF Series MEMS Filter
MOA Series Optical Attenuator
MGM Series Gas Meter
……
MEMS Accelerometer
MEMS Filter
MEMS Gyroscope
Air Flow Sensor
MEMS devices and modules
MEMS Accelerators
MEMS Accelerator High g Accelerator Sensor
MEMS devices and modules
MEMS Opto Variable Attenuator ChipMEMS Opto Switch Chip
1×50 MEMS Wave length Selected Switch (WSS) Chip
MEMS Optical Switch and Optical Attenuator
MEMS devices and modules
Packaging Solutions
• The Packaging Division has been providing components and custom integrated packaging solutions for more than 40 years. It is awarded as ‘National Industrial Experimental Base of High-Density Packaging for Large Scale Integrated Circuit’.
• The division has developed Microwave devices packages, High-Density packages, Micro packages, Optoelectronic devices packages and MEMS packages. A Multilayer Ceramic Package Development & Production Line has been built, and equipped with fully automatic Multilayer Ceramic Package production facility and advanced electronic packaging design system.
Integrated Circuit Package
MCM Plate
HIC Package
Microwave Low Noise Pacakge
Microwave MMIC Package
Optical Package
MEMS Package
AlN Products
Microwave Power Devices Pacakge
CBGA、 CPGA、 CQFP、 CSOP、 DIP...
LTCC, HTCC
LED Package
LTCC Package
Microwave Package
Packaging Solutions
Packaging Solutions
Microwave and Optical-electronic Packages
Packaging Solutions Main Manufacture Process of Optoelectronic Package
METDA Global Partners
Thank you