MEDEA ExCITe Status - IEUVIieuvi.org/TWG/Resist/2005/MTG0503/MEDEA_ExCITe_Status_Domke09.… · dependent scissioning / crosslinking behavior 0 20 40 60 80 100 120 020406080 Mw (157)

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N e v e r s t o p t h i n k i n g .

March 3rd, 2005; San Jose, CA

MEDEA ExCITe Status

IEUVI Resist TWG

W. D. Domke

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Cooperation

Peter Zandbergen ** Koen van Ingen Schenau

Karl van WerdenJean-Yves Robic

Kurt Ronse Wolf-Dieter Domke *

*) Work Package 1 Leader**) MEDEA+ T406 Project Leader

Italy: Carmelo RomeoFrance: Daniel Henry

Enzo Di Fabrizio

Michele Bertolo

Harun Solak

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Status and Results

2003 2004 2005Q1 Q2 Q3 Q4Q4 Q1 Q2 Q3 Q4 Q1 Q2 Q3

02Q4

Definition phase

Basic materials characterization Resist formulation & characterization

Open frame characterization

Patterning Characterization, Screening

Hardmask, process characterization

Definition phase

M1.1.1 M1.1.2

M1.1.5 M1.1.6

M1.2.1

M1.1.8M1.1.7

M1.2.2 M1.2.4

M1.2.6M1.2.5

we are here now

M1.2.3master milestones

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Highlights

Resist Performance Screening by EUV InterferenceLithography: Resolution no longer limited by tool, but by resist

Resist Performance Screening by EUV InterferenceLithography: Resolution no longer limited by tool, but by resist

Resist A (Supplier A); 7.7 mJ; 40 nm

Resist G (Supplier B); 47.3 mJ; 40 nm

Resist J (Supplier C); 28.2 mJ; 40 nm

ExCITe T406 – Review meeting – Feb. 22-23, 2005

PMMA (non-CA resist) imaging at PSI

17.5nm L/S 35nm contacts15nm L/S

Best resolution obtained with optical lithography so farBest resolution obtained with optical lithography so far

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Highlights

0.3 NA Patterning Experiments:

Flare has a dramaticimpact on LER

Flare has a dramaticimpact on LER

35nm L/S in MET-2D, left: dark field mask, right: bright field mask

ExCITe T406 – Review meeting – Feb. 22-23, 2005

0,00E+00

1,00E-09

2,00E-09

3,00E-09

4,00E-09

5,00E-09

6,00E-09

7,00E-09

8,00E-09

9,00E-09

1,00E-08

0 10 20 30 40 50 60 70 80 90 100

am u

a.u.

WP 1: EUV Resist Technology Highlights

ESCAP (UV5)MS spectrum

Online MS and proofplate method installedat Leti; first EUV resist outgassing resultsavailable

Online MS and proofplate method installedat Leti; first EUV resist outgassing resultsavailable

Reference

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60

70

80

Con

cent

ratio

n (%

)

Analyzed region

C 1s

Si 2p

O 1s

Si 2p

Sticked bare Si

Exposed region : Ø=38 mm

Photo-Resist

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Highlights

Polymers with high tendency to chain scissioning show the mostoutgassing

acrylic model resists show morechain scissioning in EUV comparedto even 157nm.

Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassingthan 193nm resists.

ESCAP resist shows dose-dependent scissioning / crosslinking behavior

Polymers with high tendency to chain scissioning show the mostoutgassing

acrylic model resists show morechain scissioning in EUV comparedto even 157nm.

Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassingthan 193nm resists.

ESCAP resist shows dose-dependent scissioning / crosslinking behavior

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Mw (157)Mw (EUV)

dose [mJ/cm2]

norm

aliz

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wei

ght

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Mw (157)Mw (EUV)

dose [mJ/cm2]

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@ EUV @ 193nmESCAP 5 E+11 2 E+11PHOST 3 E+12 1 E+12POSS 1 E+13

COMA-Si 2 E+13ACR-MA 3 E+14 6 E+12

Quantitation of total outgassing[molecules/cm2 sec]

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Highlights

Method of diffused point-spread function developed and used for determination of resist diffusion limitations

Method of diffused point-spread function developed and used for determination of resist diffusion limitations

Sensor, Resist

LensPoint Spread Function (PSF)

Reticle

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10

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30

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50

60

SB110C SB115C SB120C

PEB 110CPEB 115C (std.)

PEB 120C

Diffusion Length (nm)

Diffusion lengths are correlated to LERDiffusion lengths are correlated to LER

ExCITe T406 – Review meeting – Feb. 22-23, 2005

WP 1: EUV Resist Technology Highlights

MET and Interference Exposures worldwide successfully started. Resolution is limitedby the resists, no longer by the tools

Resist is ranked #3 top critical issue (Miyazaki, Nov 2004)

MEDEA ExCITe interactions with Sematech and IEUVI Resist TWG is being used to constantly update the EUV resist process specificationsTop #3 roadblocks for Resists:

- Understanding and optimization of Photospeed, Line Edge Roughness and ShotNoise

- Understanding of the Resolution Limits of Chemically Amplified Resists- What is a safe level of Resist Outgassing?

European Workshop on Resist Limitations was set-up to address the resist roadblocksand to initiate international activities (Sematech, SPIE 2005)

MET and Interference Exposures worldwide successfully started. Resolution is limitedby the resists, no longer by the tools

Resist is ranked #3 top critical issue (Miyazaki, Nov 2004)

MEDEA ExCITe interactions with Sematech and IEUVI Resist TWG is being used to constantly update the EUV resist process specificationsTop #3 roadblocks for Resists:

- Understanding and optimization of Photospeed, Line Edge Roughness and ShotNoise

- Understanding of the Resolution Limits of Chemically Amplified Resists- What is a safe level of Resist Outgassing?

European Workshop on Resist Limitations was set-up to address the resist roadblocksand to initiate international activities (Sematech, SPIE 2005)

ExCITe T406 – Review meeting – Feb. 22-23, 2005

1st European Workshop on Resist Limitations

Expected Outcome: requirements for future resist nodes,definition of plans for future resist work, collection of issues to be presentedat ISMT workshop in 2005

Participants: members of MEDEA ExCITe and on personal invitation(max. 3 participants/company)

Organization: Michael Sebald, InfineonWolf-Dieter Domke; InfineonPeter Zandbergen, Philips

Program Draft

User‘s Litho RoadmapsTool RoadmapsResist Roadmaps

Resist Brick Wall: Examples and Outlook

Discussion and Ranking in Breakout Sessions

Date & Location: December 14th, 2004Erlangen, GERMANY

Scope of Workshop: discussion and ranking of funda-mental resist limitations with regardto sub-50 nm nodes. Not neces-sarily limited to EUV (EB, 193i, etc).

Global Cooperation to overcome

Resist Roadblocks

Global Cooperation to overcome

Resist Roadblocks