MCP73841/2/3/4 - Microchip Technology · 2012. 11. 29. · MCP73841/2/3/4 DS21823D-page 4 2003-2013 Microchip Technology Inc. Preconditioning Current Regulation (Trickle Charge Constant-Current

MCP73841/2/3/4Advanced Single or Dual Cell Lithium-Ion/

Lithium-Polymer Charge Management Controllers

Features• Linear Charge Management Controllers• High-Accuracy Preset Voltage Regulation:

- + 0.5% (max)• Four Preset Voltage Regulation Options:

- 4.1V - MCP73841-4.1, MCP73843-4.1- 4.2V - MCP73841-4.2, MCP73843-4.2- 8.2V - MCP73842-8.2, MCP73844-8.2- 8.4V - MCP73842-8.4, MCP73844-8.4

• Programmable Charge Current• Programmable Safety Charge Timers• Preconditioning of Deeply Depleted Cells• Automatic End-of-Charge Control• Optional Continuous Cell Temperature

Monitoring (MCP73841 and MCP73842)• Charge Status Output for Direct LED Drive• Automatic Power-Down when Input Power

Removed• Temperature Range: -40°C to 85°C• Packaging: MSOP-10 - MCP73841, MCP73842

MSOP-8 - MCP73843, MCP73844

Applications• Lithium-Ion/Lithium-Polymer Battery Chargers• Personal Data Assistants• Cellular Telephones• Hand-Held Instruments• Cradle Chargers• Digital Cameras• MP3 Players

Typical Application Circuit

DescriptionThe MCP7384X family of devices are highly advancedlinear charge management controllers for use inspace-limited, cost-sensitive applications. TheMCP73841 and MCP73842 combine high accuracy,constant-voltage, constant-current regulation, cell pre-conditioning, cell temperature monitoring, advancedsafety timers, automatic charge termination andcharge status indication in space-saving, 10-pinMSOP packages. The MCP73841 and MCP73842provide complete, fully-functional, stand-alone chargemanagement solutions.

The MCP73843 and MCP73844 employ all thefeatures of the MCP73841 and MCP73842, with theexception of the cell temperature monitor. TheMCP73843 and MCP73844 are offered in 8-pin MSOPpackages.

The MCP73841 and MCP73843 are designed forapplications utilizing single-cell Lithium-Ion or Lithium-Polymer battery packs. Two preset voltage regulationoptions are available (4.1V and 4.2V) for use with eithercoke or graphite anodes. The MCP73841 andMCP73843 operate with an input voltage range of 4.5Vto 12V.

The MCP73842 and MCP73844 are designed forapplications utilizing dual series cell Lithium-Ion orLithium-Polymer battery packs. Two preset voltageregulation options are available (8.2V and 8.4V). TheMCP73842 and MCP73844 operate with an inputvoltage range of 8.7V to 12V.

The MCP7384X family of devices are fully specifiedover the ambient temperature range of -40°C to +85°C.

Package Types

+-

VSS

DRVSENSE

VDD VBAT

STAT13 6

7

1

2

MCP73843

810 µF

10 µF

100 k

100 m5V

SingleLithium-IonCell

NDS8434MA2Q705

1A Lithium-Ion Battery Charger

EN 5TIMER40.1 µF

10-Pin MSOP

SENSEVDD

STAT1EN

DRVVBATVSSTIMER

1234

8765M

CP7

3843

MC

P738

44

8-Pin MSOP

VDDSTAT1

ENTHREF

VBATVSSTIMERTHERM

2345

9876M

CP7

3841

MC

P738

42

SENSE DRV1 10

2003-2013 Microchip Technology Inc. DS21823D-page 1

MCP73841/2/3/4

Functional Block Diagram

Charge Termination Comparator

Voltage ControlAmplifier

VREF

IREG/10 Precondition Control

Charge_okPrecon

VDD

Charge Current Control Amplifier

+

–

VREF

VREF

Precondition Comp.

VBAT

VSS

DRV90 k

90 k

10 k

10 k

+

–

Charge Current Amplifier

VDD

SENSE

MCP73841 and MCP73842 Only

300 k (825 k)

12 k

1 k

UVLO Comparator

VUVLO

Temperature Comparators

Bias and Reference Generator

VUVLOVREF (1.2V)

Power-OnDelay

VREF

Oscillator

Constant-Voltage/ Recharge Comp.

Charge Control, Charge Timers,

And Status Logic

Drv Stat 1

Charge_ok

IREG/10

THERM

EN

TIMER

STAT1

THREF

100 k

50 k

50 k

74.21 k

0.79 k

150.02 k

5.15 k (4.29 k)

+-

+-

+-

+-

+-

+-

+-

DS21823D-page 2 2003-2013 Microchip Technology Inc.

MCP73841/2/3/4

1.0 ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings †VDD.................................................................................13.5VAll inputs and outputs w.r.t. VSS ................ -0.3 to (VDD+0.3)VCurrent at DRV Pin ......................................................±4 mACurrent at STAT1 Pin .................................................±30 mAMaximum Junction Temperature, TJ ............................. 150°CStorage temperature .....................................-65°C to +150°CESD protection on all pins:Human Body Model (1.5 k in Series with 100 pF) 2 kVMachine Model (200 pF, No Series Resistance) .............200V

*Notice: Stresses above those listed under “MaximumRatings” may cause permanent damage to the device. This isa stress rating only and functional operation of the device atthose or any other conditions above those indicated in theoperational listings of this specification is not implied. Expo-sure to maximum rating conditions for extended periods mayaffect device reliability.

DC CHARACTERISTICSElectrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.Typical values are at +25°C, VDD = [VREG(Typ) + 1V].

Parameters Sym Min Typ Max Units Conditions

Supply InputSupply Voltage VDD

MCP73841, MCP73843 4.5 – 12 VMCP73842, MCP73844 8.7 – 12 V

Supply Current ISS ––

0.250.75

44

µAmA

DisabledOperatingVDD =VREG(Typ)+1V

UVLO Start Threshold VSTARTMCP73841, MCP73843 4.25 4.45 4.60 V VDD Low-to-HighMCP73842, MCP73844 8.45 8.65 8.90 V VDD Low-to-High

UVLO Stop Threshold VSTOPMCP73841, MCP73843 4.20 4.40 4.55 V VDD High-to-LowMCP73842, MCP73844 8.40 8.60 8.85 V VDD High-to-Low

Voltage Regulation (Constant-Voltage Mode)Regulated Output Voltage VREG

MCP73841-4.1,MCP73843-4.1

4.079 4.1 4.121 V VDD = [VREG(Typ)+1V], IOUT = 10 mA,TA = -5°C to +55°C

MCP73841-4.2,MCP73843-4.2


MCP73842-8.2,MCP73844-8.2


MCP73842-8.4,MCP73844-8.4


Line Regulation VBAT/VBAT)|/VDD

– 0.025 0.25 %/V VDD = [VREG(Typ)+1V] to 12V,IOUT = 10 mA

Load Regulation VBAT|/VBAT – 0.01 0.25 % IOUT = 10 mA to 150 mA,VDD = [VREG(Typ)+1V]

Supply Ripple Attenuation PSRR – -58 – dB IOUT = 10 mA, 100 Hz– -42 – dB IOUT = 10 mA, 1 kHz– -30 – dB IOUT = 10 mA, 10 kHz

Output Reverse LeakageCurrent

IDISCHARGE – 0.4 1 µA VDD Floating, VBAT = VREG(Typ)

Current Regulation (Fast Charge Constant-Current Mode)Fast Charge CurrentRegulation Threshold

VFCS 100 110 120 mV VDD – VSENSE, TA = -5°C to +55°C


MCP73841/2/3/4

Preconditioning Current Regulation (Trickle Charge Constant-Current Mode)Precondition CurrentRegulation Threshold

VPCS 5 10 15 mV VDD – VSENSE,TA = -5°C to +55°C

Precondition Threshold Voltage VPTHMCP73841-4.1,MCP73843-4.1

2.70 2.80 2.90 V VBAT Low-to-High

MCP73841-4.2,MCP73843-4.2


MCP73842-8.2,MCP73844-8.2


MCP73842-8.4,MCP73844-8.4


Charge TerminationCharge Termination Threshold VTCS 4 7 10 mV VDD – VSENSE,

TA = -5°C to +55°CAutomatic RechargeRecharge Threshold Voltage VRTH

MCP73841,MCP73843

VREG-300 mV

VREG-200 mV

VREG-100 mV

V VBAT High-to-Low

MCP73842,MCP73844

VREG-600 mV

VREG-400 mV

VREG-200 mV

V VBAT High-to-Low

External MOSFET Gate DriveGate Drive Current IDRV – 2 – mA Sink, CV Mode

– -0.5 – mA Source, CV ModeGate Drive Minimum Voltage VDRVMIN – – 1.0 V VDD = 4.5VGate - Source Clamp Voltage VGS -7.0 – -4.5 V VDD = 12.0VThermistor Reference - MCP73841, MCP73842Thermistor Reference Output Voltage

VTHREF 2.475 2.55 2.625 V TA = +25°C, VDD = VREG(Typ)+1V,ITHREF = 0 mA

Temperature Coefficient TCTHREF – +50 – ppm/°CThermistor Reference Source Current

ITHREF 200 – – µA

Thermistor Reference LineRegulation

VTHREF/VTHREF)|/VDD

– 0.1 0.25 %/V VDD=[VREG(Typ)+1V] to 12V

Thermistor Reference LoadRegulation

VTHREF/VTHREF

– 0.01 0.10 % ITHREF = 0 mA to 0.20 mA

Thermistor Comparator - MCP73841, MCP73842Upper Trip Threshold VT1 1.18 1.25 1.32 VUpper Trip Point Hysteresis VT1HYS – -50 – mVLower Trip Threshold VT2 0.59 0.62 0.66 VLower Trip Point Hysteresis VT2HYS – 80 – mVInput Bias Current |IBIAS| – – 2 µAStatus IndicatorSink Current ISINK 4 7 12 mALow Output Voltage VOL – 200 400 mV ISINK = 1 mAInput Leakage Current ILK – 0.01 1 µA ISINK = 0 mA, VSTAT1 = 12V

DC CHARACTERISTICS (CONTINUED)Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.Typical values are at +25°C, VDD = [VREG(Typ) + 1V].



MCP73841/2/3/4

AC CHARACTERISTICS

TEMPERATURE SPECIFICATIONS

Enable InputInput High-Voltage Level VIH 1.4 - – VInput Low-Voltage Level VIL – - 0.8 VInput Leakage Current ILK – 0.01 1 µA VENABLE = 12V

Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C. Typ-ical values are at +25°C, VDD= [VREG(Typ)+1V].


UVLO Start Delay tSTART – – 5 msec VDD Low-to-HighCurrent RegulationTransition Time Out ofPreconditioning

tDELAY – – 1 msec VBAT< VPTH to VBAT > VPTH

Current Rise Time Out of Preconditioning

tRISE – – 1 msec IOUT Rising to 90% of IREG

Fast Charge Safety Timer Period tFAST 1.1 1.5 1.9 Hours CTIMER = 0.1 µFPreconditioning Current RegulationPreconditioning Charge Safety Timer Period

tPRECON 45 60 75 Minutes CTIMER = 0.1 µF

Charge TerminationElapsed Time Termination Period tTERM 2.2 3.0 3.8 Hours CTIMER = 0.1 µFStatus IndicatorsStatus Output turn-off tOFF – – 200 µsec ISINK = 10 mA to 0 mAStatus Output turn-on tON – – 200 µsec ISINK = 0 mA to 10 mA

Electrical Specifications: Unless otherwise specified, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V.Typical values are at +25°C, VDD= [VREG(Typ)+1.0V].


Temperature RangesSpecified Temperature Range TA -40 +85 °COperating Temperature Range TA -40 +125 °CStorage Temperature Range TA -65 +150 °CThermal Package ResistancesThermal Resistance, MSOP-10 JA 113 °C/W 4-Layer JC51-7 Standard Board,

Natural ConvectionThermal Resistance, MSOP-8 JA 206 °C/W Single-Layer SEMI G42-88 Board,

Natural Convection

DC CHARACTERISTICS (CONTINUED)Electrical Specifications: Unless otherwise indicated, all limits apply for VDD= [VREG(Typ)+0.3V] to 12V, TA = -40°C to +85°C.Typical values are at +25°C, VDD = [VREG(Typ) + 1V].



MCP73841/2/3/4

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, VDD = [VREG(Typ) + 1V], IOUT = 10 mA and TA= +25°C.

FIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT).

FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD).


FIGURE 2-4: Supply Current (ISS) vs. Charge Current (IOUT).

FIGURE 2-5: Supply Current (ISS) vs. Supply Voltage (VDD).


Note: The graphs and tables provided following this note are a statistical summary based on a limited number ofsamples and are provided for informational purposes only. The performance characteristics listed hereinare not tested or guaranteed. In some graphs or tables, the data presented may be outside the specifiedoperating range (e.g., outside specified power supply range) and therefore outside the warranted range.

4.196

4.197

4.198

4.199

4.200

4.201

4.202

4.203

10 100 1000IOUT (mA)

V BAT

(V)

+55°C

+25°C

-5°C

MCP73841-4.2VVDD = 5.2 V

4.196

4.197

4.198

4.199

4.200

4.201

4.202

4.203

4.5 6.0 7.5 9.0 10.5 12.0

VDD (V)

V BA

T (V)

+55°C

+25°C

-5°C

MCP73841-4.2VIOUT = 1000 mA

4.196

4.197

4.198

4.199

4.200

4.201

4.202

4.203

4.5 6.0 7.5 9.0 10.5 12.0

VDD (V)

V BA

T (V)

MCP73841-4.2VIOUT = 10 mA+55°C

+25°C

-5°C

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

10 100 1000

IOUT (mA)

I SS

(mA

)

+25°C

+85°C

-45°C

MCP73841-4.2VVDD = 5.2 V

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

4.5 6.0 7.5 9.0 10.5 12.0

VDD (V)

I SS

(mA

) +25°C

+85°C

-45°C

MCP73841-4.2VIOUT = 1000 mA

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

4.5 6.0 7.5 9.0 10.5 12.0

VDD (V)

I SS

(mA

)

MCP73841-4.2VIOUT = 10 mA

-45°C

+25°C

+85°C


MCP73841/2/3/4


FIGURE 2-7: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT).



FIGURE 2-10: Supply Current (ISS) vs. Charge Current (IOUT).



8.3908.3928.3948.3968.3988.4008.4028.4048.4068.408

10 100 1000

IOUT (mA)

V BA

T (V)

+55°C

+25°C

-5°C

MCP73842-8.4VVDD = 9.4 V

8.3908.3928.3948.3968.3988.4008.4028.4048.4068.408

8.8 9.2 9.6 10 10.4 10.8 11.2 11.6 12

VDD (V)

V BA

T (V)

+55°C

+25°C

-5°C

MCP73842-8.4VIOUT = 1000 mA

8.3908.3928.3948.3968.3988.4008.4028.4048.4068.408

8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0

VDD (V)

V BA

T (V)

MCP73842-8.4VIOUT = 10 mA +55°C

+25°C

-5°C

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

10 100 1000

IOUT (mA)

I SS

(mA

)

+25°C+85°C

-45°C

MCP73842-8.4VVDD = 9.4 V

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0

VDD (V)

I SS

(mA

) +25°C

+85°C

-45°C

MCP73842-8.4VIOUT = 1000 mA

0.00

0.20

0.40

0.60

0.80

1.00

1.20

1.40

8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0

VDD (V)

I SS

(mA

)

MCP73842-8.4VIOUT = 10 mA

-45°C

+25°C

+85°C


MCP73841/2/3/4


FIGURE 2-13: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT).

FIGURE 2-14: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF).

FIGURE 2-15: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD).

FIGURE 2-16: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT).

FIGURE 2-17: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF).

FIGURE 2-18: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD).

0.000.050.100.150.200.250.300.350.400.45

2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 4.0 4.2

VBAT (V)

I DIS

CH

AR

GE (

µA)

+25°C

+85°C

-45°C

MCP73841-4.2VVDD = Float

2.5402.5422.5442.5462.5482.5502.5522.5542.5562.5582.560

0 25 50 75 100 125 150 175 200

ITHREF (µA)

V TH

REF

(V) +85°C

+25°C

-45°C

MCP73841-4.2VVDD = 5.2 V

2.540

2.544

2.548

2.552

2.556

2.560

2.564

2.568

4.5 6.0 7.5 9.0 10.5 12.0

VDD (V)

V TH

REF

(V)

+85°C

+25°C

-45°C

MCP73841-4.2VITHREF = 100 µA

0.000.100.200.300.400.500.600.700.800.90

4.0 4.4 4.8 5.2 5.6 6.0 6.4 6.8 7.2 7.6 8.0 8.4

VBAT (V)

I DIS

CH

AR

GE (

µA)

MCP73842-8.4VVDD = Float

-45°C

+25°C

+85°C

2.5402.5422.5442.5462.5482.5502.5522.5542.5562.5582.560

0 25 50 75 100 125 150 175 200

ITHREF (µA)

V TH

REF

(V) +25°C

+85°C

-45°C

MCP73842-8.4VVDD = 9.4 V

2.540

2.544

2.548

2.552

2.556

2.560

2.564

2.568

8.8 9.2 9.6 10.0 10.4 10.8 11.2 11.6 12.0

VDD (V)

V TH

REF

(V)

MCP73842-8.4VITHREF = 100 µA

+85°C

+25°C

-45°C


MCP73841/2/3/4


FIGURE 2-19: Line Transient Response.

FIGURE 2-20: Load Transient Response.

FIGURE 2-21: Power Supply Ripple Rejection.

FIGURE 2-22: Line Transient Response.

FIGURE 2-23: Load Transient Response.

FIGURE 2-24: Power Supply Ripple Rejection.

VDD

VBAT

MCP73841-4.2V

VDD Stepped From 5.2V to 6.2V

IOUT = 10 mA

COUT = 10 µF, X7R, Ceramic

MCP73841-4.2V

VDD = 5.2V

COUT = 10 µF, X7R, CeramicVBAT

IOUT100 mA

10 mA

-80-70-60-50-40-30-20-10

0

0.01 0.1 1 10 100 1000

Frequency (kHz)

Atte

nuat

ion

(dB

)

MCP73841-4.2VVDD = 5.2 VVAC = 100 mVp-pIOUT = 10 mACOUT = 10 µF, X7R, CERAMIC

VDD

VBAT

MCP73841-4.2V

VDD Stepped From 5.2V to 6.2V

IOUT = 500 mA


VBAT

MCP73841-4.2V

VDD = 5.2V


IOUT500 mA

10 mA

-80-70-60-50-40-30-20-10

0

0.01 0.1 1 10 100 1000

Frequency (kHz)

Atte

nuat

ion

(dB

)

MCP73841-4.2VVDD = 5.2 VVAC = 100 mVp-pIOUT = 100 mACOUT = 10 µF, X7R, CERAMIC


MCP73841/2/3/4

3.0 PIN DESCRIPTIONSThe descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN DESCRIPTION TABLE

3.1 Charge Current Sense Input (SENSE)

Charge current is sensed via the voltage developedacross an external precision sense resistor. The senseresistor must be placed between the supply voltage(VDD) and the external pass transistor (Q1). A 220 msense resistor produces a fast charge current of500 mA, typically.

3.2 Battery Management Input Supply (VDD)

A supply voltage of [VREG(Typ) + 0.3V] to 12V isrecommended. Bypass to VSS with a minimum of4.7 µF.

3.3 Charge Status Output (STAT1)Current limited, open-drain drive for direct connectionto a LED for charge status indication. Alternatively, apull-up resistor can be applied for interfacing to a hostmicrocontroller.

3.4 Logic Enable (EN)Input to force charge termination, initiate charge, clear faults or disable automatic recharge.

3.5 Cell Temperature Sensor Bias (THREF)

Voltage reference to bias external thermistor forcontinuous cell temperature monitoring andprequalification.

3.6 Cell Temperature Sensor Input (THERM)

Input for an external thermistor for continuous cell-temperature monitoring and pre-qualification. Apply avoltage equal to 0.85V to disable temperature-sensing.

3.7 Timer Set (TIMER)All safety timers are scaled by CTIMER/0.1 µF.

3.8 Battery Management 0V Reference (VSS)

Connect to negative terminal of battery.

3.9 Battery Voltage Sense (VBAT)Voltage sense input. Connect to positive terminal ofbattery. Bypass to VSS with a minimum of 4.7 µF toensure loop stability when the battery is disconnected.A precision internal resistor divider regulates the finalvoltage on this pin to VREG.

3.10 Drive Output (DRV)Direct output drive of an external P-channel MOSFETfor current and voltage regulation.

MCP73841, MCP73842

Pin No.

MCP73843, MCP73844

Pin No.Name Function

1 1 SENSE Charge Current Sense Input2 2 VDD Battery Management Input Supply3 3 STAT1 Charge Status Output4 4 EN Logic Enable5 — THREF Cell Temperature Sensor Bias6 — THERM Cell Temperature Sensor Input7 5 TIMER Timer Set8 6 VSS Battery Management 0V Reference9 7 VBAT Battery Voltage Sense

10 8 DRV Drive Output


MCP73841/2/3/4

4.0 DEVICE OVERVIEWThe MCP7384X family of devices are highly advanced,linear charge management controllers. Figure 4-1depicts the operational flow algorithm from chargeinitiation to completion and automatic recharge.

4.1 Charge Qualification and Preconditioning

Upon insertion of a battery or application of an externalsupply, the MCP7384X family of devices automaticallyperform a series of safety checks to qualify the charge.The input source voltage must be above theundervoltage lockout threshold, the enable pin must beabove the logic-high level and the cell temperaturemonitor must be within the upper and lower thresholds.The cell temperature monitor applies to both theMCP73841 and MCP73842, with the qualificationparameters being continuously monitored. Deviationbeyond the limits automatically suspends or terminatesthe charge cycle.

Once the qualification parameters have been met, theMCP7384X initiates a charge cycle. The charge statusoutput is pulled low throughout the charge cycle (seeTable 5-1 for charge status outputs). If the batteryvoltage is below the preconditioning threshold (VPTH),the MCP7384X preconditions the battery with a trickle-charge. The preconditioning current is set toapproximately 10% of the fast charge regulationcurrent. The preconditioning trickle-charge safelyreplenishes deeply depleted cells and minimizes heatdissipation in the external pass transistor during theinitial charge cycle. If the battery voltage has notexceeded the preconditioning threshold before thepreconditioning timer has expired, a fault is indicatedand the charge cycle is terminated.

4.2 Constant-Current Regulation – Fast Charge

Preconditioning ends and fast charging begins, whenthe battery voltage exceeds the preconditioningthreshold. Fast charge regulates to a constant-current,IREG, based on the supply voltage minus the voltage atthe SENSE input (VFCS) developed by the drop acrossan external sense resistor (RSENSE). Fast chargecontinues until the battery voltage reaches theregulation voltage (VREG); or until the fast charge timerexpires. In this case, a fault is indicated and the chargecycle is terminated.

4.3 Constant-Voltage RegulationWhen the battery voltage reaches the regulationvoltage (VREG), constant-voltage regulation begins.The MCP7384X monitors the battery voltage at theVBAT pin. This input is tied directly to the positiveterminal of the battery. The MCP7384X is offered infour fixed-voltage versions for single or dual series cellbattery packs with either coke or graphite anodes:

- 4.1V (MCP73841-4.1, MCP73843-4.1)- 4.2V (MCP73841-4.2, MCP73843-4.2)- 8.2V (MCP73842-8.2, MCP73844-8.2)- 8.4V (MCP73842-8.4, MCP73844-8.4)

4.4 Charge Cycle Completion and Automatic Re-Charge

The MCP7384X monitors the charging current duringthe constant-voltage regulation phase. The chargecycle is considered complete when the charge currenthas diminished below approximately 7% of theregulation current (IREG) or the elapsed timer hasexpired.

The MCP7384X automatically begins a new chargecycle when the battery voltage falls below the rechargethreshold (VRTH), assuming all the qualificationparameters are met.


2003-2013 M

icrochip Technology Inc.D

S21823D

-page 12

MC

P73841/2/3/4FIG

aseEG

Yes

VBAT < VRTH

Charge TerminationCharge Current = 0Reset Safety Timer

NoSTAT1 = Off

Noinged

= 0

Yes

VDD < VUVLO

or EN Low

URE 4-1: Operational Flow Algorithm - MCP73841 and MCP73842.

Preconditioning PhaseCharge Current = IPREGReset Safety Timer

Yes

Initialize

No

Yes

VBAT > VPTHSTAT1 = On

VBAT > VPTH

Yes

VDD < VUVLO

No

No

Safety Timer

YesTemperature OK

NoSTAT1 = FlashingSafety Timer SuspendedCharge Current = 0

FaultCharge Current = 0Reset Safety Timer

or EN LowNoSTAT1 = Flashing

Constant-Current

Charge Current = IREGReset Safety Timer

VBAT = VREG

No

No

Safety Timer

Yes Temperature OK

Constant-Voltage PhOutput Voltage = VR

IOUT < ITERMElapsed Timer

Yes

Yes

Temperature OK

STAT1 = FlashSafety Timer Suspend

Charge Current

Yes

No

Yes

Yes

Temperature OKNoSTAT1 = FlashingCharge Current = 0

Yes

NoSTAT1 = Off

VDD > VUVLO

Phase

Expired

Expired

NoSTAT1 = FlashingSafety Timer SuspendedCharge Current = 0

EN High

Expired

Note: The qualification parameters are continuouslymonitored throughout the charge cycle.

Note

Note

MCP73841/2/3/4

5.0 DETAILED DESCRIPTION

5.1 Analog Circuitry

5.1.1 CHARGE CURRENT SENSE INPUT (SENSE)

Fast charge current regulation is maintained by thevoltage drop developed across an external senseresistor (RSENSE) applied to the SENSE input pin. Thefollowing formula calculates the value for RSENSE:

The preconditioning trickle-charge current and thecharge termination current are scaled to approximately10% and 7% of IREG, respectively.

5.1.2 BATTERY MANAGEMENT INPUT SUPPLY (VDD)

The VDD input is the input supply to the MCP7384X.The MCP7384X automatically enters a power-downmode if the voltage on the VDD input falls below theundervoltage lockout voltage (VSTOP). This featureprevents draining the battery pack when the VDDsupply is not present.

5.1.3 CELL TEMPERATURE SENSOR BIAS (THREF)

A 2.55V voltage reference is provided to bias anexternal thermistor for continuous cell temperaturemonitoring and pre-qualification. A ratio metric windowcomparison is performed at threshold levels ofVTHREF/2 and VTHREF/4. Cell temperature monitoringis provided by both the MCP73841 and MCP73842.

5.1.4 CELL TEMPERATURE SENSOR INPUT (THERM)

The MCP73841 and MCP73842 continuously monitortemperature by comparing the voltage between theTHERM input and VSS with the upper and lowertemperature thresholds. A negative or positivetemperature coefficient (NTC or PTC) thermistor andan external voltage divider typically develop thisvoltage. The temperature-sensing circuit has its ownreference, to which it performs a ratio metriccomparison. Therefore, it is immune to fluctuations inthe supply input (VDD). The temperature-sensing circuitis removed from the system when VDD is not applied,eliminating additional discharge of the battery pack.

Figure 6-1 depicts a typical application circuit withconnection of the THERM input. The resistor values ofRT1 and RT2 are calculated with the followingequations.

For NTC thermistors:

For PTC thermistors:

Applying a voltage equal to 0.85V to the THERM inputdisables temperature monitoring.

5.1.5 TIMER SET INPUT (TIMER)The TIMER input programs the period of the safetytimers by placing a timing capacitor (CTIMER) betweenthe TIMER input pin and VSS. Three safety timers areprogrammed via the timing capacitor.

The preconditioning safety timer period:

The fast charge safety timer period:

The elapsed time termination period:

The preconditioning timer starts after qualification andresets when the charge cycle transitions to the con-stant-current, fast charge phase. The fast charge andelapsed timers start once the MCP7384X transitionsfrom preconditioning. The fast charge timer resetswhen the charge cycle transitions to the constant-volt-age phase. The elapsed timer will expire and terminatethe charge if the sensed current does not diminishbelow the termination threshold.

RSENSEVFCSIREG------------=

where:IREG is the desired fast charge current in amps

RT12 RCOLD RHOT

RCOLD RHOT–----------------------------------------------=

RT22 RCOLD RHOTRCOLD 3 R HOT–----------------------------------------------=

RT12 RCOLD RHOT

RHOT RCOLD–----------------------------------------------=

RT22 RCOLD RHOTRHOT 3 R COLD–----------------------------------------------=

where:

values at the temperature window of interest.RCOLD and RHOT are the thermistor resistance

tPRECONCTIMER0.1F------------------- 1.0Hour s=

tFASTCTIMER0.1F------------------- 1.5Hours=

tTERMCTIMER0.1F------------------- 3.0Hours=


MCP73841/2/3/4

5.1.6 BATTERY VOLTAGE SENSE (VBAT)The MCP7384X monitors the battery voltage at theVBAT pin. This input is tied directly to the positiveterminal of the battery. The MCP7384X is offered infour fixed-voltage versions for single or dual series cellbattery packs, with either coke or graphite anodes:

- 4.1V (MCP73841-4.1, MCP73843-4.1)- 4.2V (MCP73841-4.2, MCP73843-4.2)- 8.2V (MCP73842-8.2, MCP73844-8.2)- 8.4V (MCP73842-8.4, MCP73844-8.4)

5.1.7 DRIVE OUTPUT (DRV)The MCP7384X controls the gate drive to an externalP-channel MOSFET. The P-channel MOSFET iscontrolled in the linear region regulating current andvoltage supplied to the cell. The drive output isautomatically turned off when the voltage on the VDDinput falls below the undervoltage lockout voltage(VSTOP).

5.2 Digital Circuitry

5.2.1 CHARGE STATUS OUTPUT (STAT1)A status output provides information on the state-of-charge. The current-limited, open-drain output can beused to illuminate an external LED. Optionally, a pull-upresistor can be used on the output for communicationwith a host microcontroller. Table 5-1 summarizes thestate of the status output during a charge cycle.

TABLE 5-1: STATUS OUTPUTS

The flashing rate (1 Hz) is based off a timer capacitor(CTIMER) of 0.1 µF. The rate will vary based on thevalue of the timer capacitor.

5.2.2 LOGIC ENABLE (EN)The logic-enable input pin (EN) can be used toterminate a charge anytime during the charge cycle,initiate a charge cycle or initiate a recharge cycle.

Applying a logic-high input signal to the EN pin, or tyingit to the input source, enables the device. Applying alogic-low input signal disables the device andterminates a charge cycle. When disabled, the device’ssupply current is reduced to 0.25 µA, typically.

Charge Cycle State Stat1

Qualification OFFPreconditioning ONConstant-Current Fast Charge

ON

Constant-Voltage ONCharge Complete OFFSafety Timer Fault Flashing

(1 Hz, 50% duty cycle)Cell Temperature Invalid Flashing

(1 Hz, 50% duty cycle)Disabled - Sleep mode OFFBattery Disconnected OFF


MCP73841/2/3/4

6.0 APPLICATIONSThe MCP7384X is designed to operate in conjunctionwith either a host microcontroller or in stand-aloneapplications. The MCP7384X provides the preferredcharge algorithm for Lithium-Ion and Lithium-Polymer

cells: constant-current followed by constant-voltage.Figure 6-1 depicts a typical stand-alone applicationcircuit, while Figure 6-2 depicts the accompanyingcharge profile.

FIGURE 6-1: Typical Application Circuit.

FIGURE 6-2: Typical Charge Profile.

VDDVSS

VBAT

DRV

THERM

EN

SENSE 1

2

3

4

10

9

8

7MCP73841

TIMER

5 6

STAT1

Voltage

+-

BatteryPack

RSENSE

CTIMER

Optional

THREFRT1

RT2

Q1

ReverseBlockingDiode

RegulatedWall Cube

Regulation Voltage(VREG)

Regulation Current(IREG)

Transition Threshold(VPTH)

Precondition Current(IPREG)

PreconditionSafety Timer

Fast ChargeSafety Timer

Elapsed TimeTermination Timer

ChargeCurrent

ChargeVoltage

PreconditioningPhase

Constant-CurrentPhase

Constant-VoltagePhase

Termination Current(ITERM)


MCP73841/2/3/4

6.1 Application Circuit Design Due to the low efficiency of linear charging, the mostimportant factors are thermal design and cost, which area direct function of the input voltage, output current andthermal impedance between the external P-channelpass transistor and the ambient cooling air. The worst-case situation occurs when the device has transitionedfrom the preconditioning phase to the constant-currentphase. In this situation, the P-channel pass transistorhas to dissipate the maximum power. A trade-off mustbe made between the charge current, cost and thermalrequirements of the charger.

6.1.1 COMPONENT SELECTIONSelection of the external components in Figure 6-1 arecrucial to the integrity and reliability of the chargingsystem. The following discussion is intended to be aguide for the component selection process.

6.1.1.1 Sense ResistorThe preferred fast charge current for Lithium-Ion cellsis at the 1C rate, with an absolute maximum current atthe 2C rate. For example, a 500 mAh battery pack hasa preferred fast charge current of 500 mA. Charging atthis rate provides the shortest charge cycle timeswithout degradation to the battery pack performance orlife.

The current sense resistor (RSENSE) is calculated by:

For the 500 mAh battery pack example, a standardvalue 220 m, 1% resistor provides a typical fastcharge current of 500 mA and a maximum fast chargecurrent of 551 mA. Worst-case power dissipation in thesense resistor is:

A Panasonic® ERJ-6RQFR22V, 220 mW, 1%, 1/8Wresistor in a standard 0805 package is more thansufficient for this application.

A larger value sense resistor will decrease the fastcharge current and power dissipation in both the senseresistor and external pass transistor, but will increasecharge cycle times. Design trade-offs must beconsidered to minimize space while maintaining thedesired performance.

6.1.1.2 External Pass TransistorThe external P-channel MOSFET is determined by thegate-to-source threshold voltage, input voltage, outputvoltage and fast charge current. Therefore, theselected P-channel MOSFET must satisfy the thermaland electrical design requirements.

Thermal ConsiderationsThe worst-case power dissipation in the external passtransistor occurs when the input voltage is at themaximum and the device has transitioned from thepreconditioning phase to the constant-current phase. Inthis case, the power dissipation is:

Power dissipation with a 5V, ±10% input voltagesource, 220 m, 1% sense resistor is:

Utilizing a Fairchild™ NDS8434 or an InternationalRectifier IRF7404 mounted on a 1in2 pad of 2 oz.copper, the junction temperature rise is 75°C,approximately. This would allow for a maximumoperating ambient temperature of 75°C.

By increasing the size of the copper pad, a higher ambi-ent temperature can be realized, or a lower valuesense resistor could be utilized.

Alternatively, different package options can be utilizedfor more or less power dissipation. Again, design trade-offs should be considered to minimize size whilemaintaining the desired performance.

Electrical ConsiderationsThe gate-to-source threshold voltage and RDSON of theexternal P-channel MOSFET must be considered in thedesign phase.

The worst-case VGS provided by the controller occurswhen the input voltage is at the minimum and the fastcharge current regulation threshold is at the maximum.The worst-case VGS is:

RSENSEVFCSIREG------------=

Where:IREG is the desired fast charge current.

PowerDissipation 220m 551mA2 66.8mW= =

PowerDissipation VDDMAX VPTHMIN– IREGMAX=

Where:VDDMAX is the maximum input voltage.IREGMAX is the maximum fast charge current.VPTHMIN is the minimum transition threshold voltage.

PowerDissipation 5.5V 2.75V– 551mA 1.52W= =

VGS VDRVMAX VDDMIN VFCSMAX ––=Where:VDRVMAX is the maximum sink voltage at the VDRV outputVDDMIN is the minimum input voltage sourceVFCSMAX is the maximum fast charge current regulation threshold


MCP73841/2/3/4

Worst-case VGS with a 5V, ±10% input voltage sourceand a maximum sink voltage of 1.0V is:

At this worst-case (VGS) the RDSON of the MOSFETmust be low enough as to not impede the performanceof the charging system. The maximum allowableRDSON at the worst-case VGS is:

The Fairchild NDS8434 and International RectifierIRF7404 both satisfy these requirements.

6.1.1.3 EXTERNAL CAPACITORS

The MCP7384X are stable with or without a batteryload. In order to maintain good AC stability in theConstant-Voltage mode, a minimum capacitance of4.7 µF is recommended to bypass the VBAT pin to VSS.This capacitance provides compensation when there isno battery load. Additionally, the battery andinterconnections appear inductive at high frequencies.These elements are in the control feedback loop duringConstant-Voltage mode. Therefore, the bypasscapacitance may be necessary to compensate for theinductive nature of the battery pack.

Virtually any good quality output filter capacitor can beused, independent of the capacitor’s minimum ESR(Effective Series Resistance) value. The actual value ofthe capacitor and its associated ESR depends on theforward transconductance (gm) and capacitance of theexternal pass transistor. A 4.7 µF tantalum or aluminumelectrolytic capacitor at the output is usually sufficientto ensure stability for up to a 1A output current.

6.1.1.4 REVERSE-BLOCKING PROTECTION

The optional reverse-blocking protection diode,depicted in Figure 6-1, provides protection from afaulted or shorted input, or from a reversed-polarityinput source. Without the protection diode, a faulted orshorted input would discharge the battery pack throughthe body diode of the external pass transistor.

If a reverse-protection diode is incorporated into thedesign, it should be chosen to handle the fast chargecurrent continuously at the maximum ambienttemperature. In addition, the reverse-leakage currentof the diode should be kept as small as possible.

6.1.1.5 ENABLE INTERFACE

In the stand-alone configuration, the enable pin isgenerally tied to the input voltage. The MCP7384Xautomatically enters a Low-power mode when voltageon the VDD input falls below the undervoltage lockoutvoltage (VSTOP), reducing the battery drain current to0.4 µA, typically.

6.1.1.6 CHARGE STATUS INTERFACE

A status output provides information on the state ofcharge. The current-limited, open-drain output can beused to illuminate an external LED. Refer to Table 5-1for a summary of the state of the status output during acharge cycle.

6.2 PCB Layout Issues

For optimum voltage regulation, place the battery packas close as possible to the device’s VBAT and VSS pins.This is recommended to minimize voltage drops alongthe high current-carrying PCB traces.

If the PCB layout is used as a heatsink, adding manyvias around the external pass transistor can helpconduct more heat to the back plane of the PCB, thusreducing the maximum junction temperature.

VGS 1.0V 4.5V 120mV– – 3.38V–= =

RDSONVDDMIN VFCSMAX– VBATMAX–

IREGMAX-------------------------------------------------------------------------------=

RDSON4.5V 120 115 mV– 4.221V–

551 581 mA------------------------------------------------------------------------- 288m= =


MCP73841/2/3/4

7.0 PACKAGING INFORMATION

7.1 Package Marking Information

8-Lead MSOP (MCP73843, MCP73844) Example:

XXXXX

YWWNNN

738431

0319256

10-Lead MSOP (MCP73841, MCP73842) Example:

XXXXX

YYWWNNN

738411

0319256

Legend: XX...X Customer-specific informationY Year code (last digit of calendar year)YY Year code (last 2 digits of calendar year)WW Week code (week of January 1 is week ‘01’)NNN Alphanumeric traceability code Pb-free JEDEC designator for Matte Tin (Sn)* This package is Pb-free. The Pb-free JEDEC designator ( )

can be found on the outer packaging for this package.

Note: In the event the full Microchip part number cannot be marked on one line, it willbe carried over to the next line, thus limiting the number of availablecharacters for customer-specific information.

3e

3e


MCP73841/2/3/4

8-Lead Plastic Micro Small Outline Package (MS) (MSOP)

D

A

A1

L

c

(F)

α

A2

E1

E

p

B

n 1

2

φ

β

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

.037 REFFFootprint (Reference)

exceed .010" (0.254mm) per side.

Notes:

Drawing No. C04-111

*Controlling Parameter

Mold Draft Angle Top

Mold Draft Angle Bottom

Foot Angle

Lead Width

Lead Thickness

βα

c

B

φ.003

.009

.006

.012

Dimension Limits

Overall Height

Molded Package Thickness

Molded Package Width

Overall Length

Foot Length

Standoff

Overall Width

Number of Pins

Pitch

A

L

E1

D

A1

E

A2

.016 .024

.118 BSC

.118 BSC

.000

.030

.193 TYP.

.033

MIN

p

n

Units

.026 BSC

NOM

8

INCHES

0.95 REF

-

-

.009

.016

0.08

0.22

0°

0.23

0.40

8°

MILLIMETERS*

0.65 BSC

0.85

3.00 BSC

3.00 BSC

0.60

4.90 BSC

.043

.031

.037

.006

0.40

0.00

0.75

MINMAX NOM

1.10

0.80

0.15

0.95

MAX

8

- -

-

15°5° -

15°5° -

JEDEC Equivalent: MO-187

0° - 8°

5°

5° -

-

15°

15°

--

- -

Note: For the most current package drawings, please see the Microchip Packaging Specification locatedat http://www.microchip.com/packaging


MCP73841/2/3/4

10-Lead Plastic Micro Small Outline Package (UN) (MSOP)

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not

.037 REFFFootprint

exceed .010" (0.254mm) per side.

Notes:

Drawing No. C04-021

*Controlling Parameter

Mold Draft Angle Top

Mold Draft Angle Bottom

Foot Angle

Lead Width

Lead Thickness

βα

c

B

φ.003

.006

-

.009

Dimension Limits

Overall Height

Molded Package Thickness

Molded Package Width

Overall Length

Foot Length

Standoff

Overall Width

Number of Pins

Pitch

A

L

E1

D

A1

E

A2

.016 .024

.118 BSC

.118 BSC

.000

.030

.193 BSC

.033

MIN

p

n

Units

.020 TYP

NOM

10

INCHES

0.95 REF

-

0.23

.009

.012

0.08

0.15

-

-

0.23

0.30

MILLIMETERS*

0.50 TYP.

0.85

3.00 BSC

3.00 BSC

0.60

4.90 BSC

.043

.031

.037

.006

0.40

0.00

0.75

MINMAX NOM

1.10

0.80

0.15

0.95

MAX

10

5° 15°

5° 15°

-

- -

0° - 8°

5° -

5° -

15°

15°

JEDEC Equivalent: MO-187

8°0°

E

L

D

β

(F)

B

p

E1

n

φ

α

A2

1

2

c

A1

A

L1

--

- -

Note: For the most current package drawings, please see the Microchip Packaging Specification locatedat http://www.microchip.com/packaging


MCP73841/2/3/4

8.0 REVISION HISTORYRevision D (January 2013)Added a note to each package outline drawing.


MCP73841/2/3/4


MCP73841/2/3/4

PRODUCT IDENTIFICATION SYSTEMTo order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Sales and Support

Device MCP73841: Single-cell charge controller with temperature

monitorMCP73841T: Single-cell charge controller with temperature

monitor, Tape and ReelMCP73842: Dual series cells charge controller with tem-

perature monitorMCP73842T: Dual series cells charge controller with tem-

perature monitor, Tape and ReelMCP73843: Single-cell charge controllerMCP73843T: Single-cell charge controller, Tape and ReelMCP73844: Dual series cells charge controllerMCP73844T: Dual series cells charge controller,

Tape and Reel

Preset VoltageRegulation Options

410 = 4.1V420 = 4.2V820 = 8.2V840 = 8.4V

Temperature Range I = -40C to +85C (Industrial)

Package MS = Plastic Micro Small Outline (MSOP), 8-leadUN = Plastic Micro Small Outline (MSOP), 10-lead

PART NO. X XX

PackageTemperatureRange

Device

XXX

PresetVoltageOptions

Examples:a) MCP73841-410I/UN: 4.1V Preset Voltageb) MCP73841T-410I/UN: 4.1V Preset Voltage,

Tape and Reelc) MCP73841-420I/UN: 4.2V Preset Voltaged) MCP73841T-420I/UN: 4.2V Preset Voltage,

Tape and Reel

a) MCP73842-820I/UN: 8.2V Preset Voltageb) MCP73842T-820I/UN: 8.2V Preset Voltage,

Tape and Reelc) MCP73842-840I/UN: 8.4V Preset Voltaged) MCP73842T-840I/UN: 8.4V Preset Voltage,

Tape and Reel

a) MCP73843-410I/MS: 4.1V Preset Voltageb) MCP73843T-410I/MS: 4.1V Preset Voltage,

Tape and Reelc) MCP73843-420I/MS: 4.2V Preset Voltaged) MCP73843T-420I/MS: 4.2V Preset Voltage,

Tape and Reel

a) MCP73844-820I/MS: 8.2V Preset Voltageb) MCP73844T-820I/MS: 8.2V Preset Voltage,

Tape and Reelc) MCP73844-840I/MS: 8.4V Preset Voltaged) MCP73844T-840I/MS: 8.4V Preset Voltage,

Tape and Reel

Data SheetsProducts supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and recommended workarounds. To determine if an errata sheet exists for a particular device, please contact one of the following:

1. Your local Microchip sales office2. The Microchip Worldwide Site (www.microchip.com)

Please specify which device, revision of silicon and Data Sheet (include Literature #) you are using.

Customer Notification SystemRegister on our web site (www.microchip.com/cn) to receive the most current information on our products.


MCP73841/2/3/4

NOTES:


Note the following details of the code protection feature on Microchip devices:• Microchip products meet the specification contained in their particular Microchip Data Sheet.

• Microchip believes that its family of products is one of the most secure families of its kind on the market today, when used in the intended manner and under normal conditions.

• There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data Sheets. Most likely, the person doing so is engaged in theft of intellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not mean that we are guaranteeing the product as “unbreakable.”

Code protection is constantly evolving. We at Microchip are committed to continuously improving the code protection features of ourproducts. Attempts to break Microchip’s code protection feature may be a violation of the Digital Millennium Copyright Act. If such actsallow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Information contained in this publication regarding deviceapplications and the like is provided only for your convenienceand may be superseded by updates. It is your responsibility toensure that your application meets with your specifications.MICROCHIP MAKES NO REPRESENTATIONS ORWARRANTIES OF ANY KIND WHETHER EXPRESS ORIMPLIED, WRITTEN OR ORAL, STATUTORY OROTHERWISE, RELATED TO THE INFORMATION,INCLUDING BUT NOT LIMITED TO ITS CONDITION,QUALITY, PERFORMANCE, MERCHANTABILITY ORFITNESS FOR PURPOSE. Microchip disclaims all liabilityarising from this information and its use. Use of Microchipdevices in life support and/or safety applications is entirely atthe buyer’s risk, and the buyer agrees to defend, indemnify andhold harmless Microchip from any and all damages, claims,suits, or expenses resulting from such use. No licenses areconveyed, implicitly or otherwise, under any Microchipintellectual property rights.

2003-2013 Microchip Technology Inc.

QUALITY MANAGEMENT SYSTEM CERTIFIED BY DNV

== ISO/TS 16949 ==

Trademarks

The Microchip name and logo, the Microchip logo, dsPIC, FlashFlex, KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PICSTART, PIC32 logo, rfPIC, SST, SST Logo, SuperFlash and UNI/O are registered trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor, MTP, SEEVAL and The Embedded Control Solutions Company are registered trademarks of Microchip Technology Incorporated in the U.S.A.

Silicon Storage Technology is a registered trademark of Microchip Technology Inc. in other countries.

Analog-for-the-Digital Age, Application Maestro, BodyCom, chipKIT, chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net, dsPICworks, dsSPEAK, ECAN, ECONOMONITOR, FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP, Mindi, MiWi, MPASM, MPF, MPLAB Certified logo, MPLIB, MPLINK, mTouch, Omniscient Code Generation, PICC, PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE, rfLAB, Select Mode, SQI, Serial Quad I/O, Total Endurance, TSHARC, UniWinDriver, WiperLock, ZENA and Z-Scale are trademarks of Microchip Technology Incorporated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated in the U.S.A.

GestIC and ULPP are registered trademarks of Microchip Technology Germany II GmbH & Co. & KG, a subsidiary of Microchip Technology Inc., in other countries.

All other trademarks mentioned herein are property of their respective companies.

© 2003-2013, Microchip Technology Incorporated, Printed in the U.S.A., All Rights Reserved.

Printed on recycled paper.

ISBN: 9781620769027

Microchip received ISO/TS-16949:2009 certification for its worldwide

DS21823D-page 25

headquarters, design and wafer fabrication facilities in Chandler and Tempe, Arizona; Gresham, Oregon and design centers in California and India. The Company’s quality system processes and procedures are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping devices, Serial EEPROMs, microperipherals, nonvolatile memory and analog products. In addition, Microchip’s quality system for the design and manufacture of development systems is ISO 9001:2000 certified.


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11/29/12

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1.0 Electrical Characteristics2.0 Typical Performance CurvesFIGURE 2-1: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT).FIGURE 2-2: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD).FIGURE 2-3: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD).FIGURE 2-4: Supply Current (ISS) vs. Charge Current (IOUT).FIGURE 2-5: Supply Current (ISS) vs. Supply Voltage (VDD).FIGURE 2-6: Supply Current (ISS) vs. Supply Voltage (VDD).FIGURE 2-7: Battery Regulation Voltage (VBAT) vs. Charge Current (IOUT).FIGURE 2-8: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD).FIGURE 2-9: Battery Regulation Voltage (VBAT) vs. Supply Voltage (VDD).FIGURE 2-10: Supply Current (ISS) vs. Charge Current (IOUT).FIGURE 2-11: Supply Current (ISS) vs. Supply Voltage (VDD).FIGURE 2-12: Supply Current (ISS) vs. Supply Voltage (VDD).FIGURE 2-13: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT).FIGURE 2-14: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF).FIGURE 2-15: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD).FIGURE 2-16: Output Reverse Leakage Current (IDISCHARGE) vs. Battery Voltage (VBAT).FIGURE 2-17: Thermistor Reference Voltage (VTHREF) vs. Thermistor Bias Current (ITHREF).FIGURE 2-18: Thermistor Reference Voltage (VTHREF) vs. Supply Voltage (VDD).FIGURE 2-19: Line Transient Response.FIGURE 2-20: Load Transient Response.FIGURE 2-21: Power Supply Ripple Rejection.FIGURE 2-22: Line Transient Response.FIGURE 2-23: Load Transient Response.FIGURE 2-24: Power Supply Ripple Rejection.

3.0 Pin DescriptionsTABLE 3-1: Pin Description Table3.1 Charge Current Sense Input (SENSE)3.2 Battery Management Input Supply (VDD)3.3 Charge Status Output (STAT1)3.4 Logic Enable (EN)3.5 Cell Temperature Sensor Bias (THREF)3.6 Cell Temperature Sensor Input (THERM)3.7 Timer Set (TIMER)3.8 Battery Management 0V Reference (VSS)3.9 Battery Voltage Sense (VBAT)3.10 Drive Output (DRV)

4.0 Device Overview4.1 Charge Qualification and Preconditioning4.2 Constant-Current Regulation – Fast Charge4.3 Constant-Voltage Regulation4.4 Charge Cycle Completion and Automatic Re-ChargeFIGURE 4-1: Operational Flow Algorithm - MCP73841 and MCP73842.

5.0 Detailed Description5.1 Analog Circuitry5.2 Digital CircuitryTABLE 5-1: Status Outputs

6.0 ApplicationsFIGURE 6-1: Typical Application Circuit.FIGURE 6-2: Typical Charge Profile.6.1 Application Circuit Design6.2 PCB Layout Issues

7.0 Packaging Information7.1 Package Marking Information

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MCP73841/2/3/4 - Microchip Technology · 2012. 11. 29. · MCP73841/2/3/4 DS21823D-page 4 2003-2013 Microchip Technology Inc. Preconditioning Current Regulation (Trickle Charge Constant-Current

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