Magnetoresistance of tunnel junctions based on the ferromagnetic semiconductor GaMnAs UNITE MIXTE DE PHYSIQUE associée à l’UNIVERSITE PARIS SUD . Mattana, J.-M. George, H. Jaffrès, F. NGuyen Van Dau, A. Fe UMP CNRS-THALES, Orsay, France B. Lépine, A. Guivarc’h, G. Jézéquel UMR CNRS-Université Rennes I, France A. Hamzic, M. Basletic, E. Tafra Department of Physics, Faculty of Science, Zagreb, Croatia
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Magnetoresistance of tunnel junctions based on the ferromagnetic semiconductor GaMnAs UNITE MIXTE DE PHYSIQUE associée à l’UNIVERSITE PARIS SUD R. Mattana,
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Magnetoresistance of tunnel junctions based on the ferromagnetic semiconductor
GaMnAs
UNITE MIXTE DE PHYSIQUEassociée à l’UNIVERSITE PARIS SUD
R. Mattana, J.-M. George, H. Jaffrès, F. NGuyen Van Dau, A. FertUMP CNRS-THALES, Orsay, France
B. Lépine, A. Guivarc’h, G. JézéquelUMR CNRS-Université Rennes I, France
A. Hamzic, M. Basletic, E. TafraDepartment of Physics, Faculty of Science, Zagreb, Croatia
Spin electronics
Use the spin of the carriers :Metallic system (GMR, TMR,..)Extension to semiconductors