M. Furlan I. Jerjen E. Kirk Ph. Lerch A. Zehnder

PAUL SCHERRER INSTITUT

M. FurlanI. JerjenE. Kirk

Ph. LerchA. Zehnder

Cryogenic Detectors Development at PSI

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PSI Cryo-detector Work

•SIS STJ

• Ta-STJ, Single pixel and strips

• Mn- X-Ray, Optical

•Caloriemeter

• MoAu TES, Mn-X-ray

•SIN STJ

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SiSi-nitride

Mo/Au

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Mo/Au Microcalorimeter• Mo/Au-TES• Au Absorber• Si-nitride membrane, “bad” thermal link• Thesis J. Olsen.

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Ta-Al/AlOx/Al-Ta-Nb produced by E. Kirk

Basic tunneling junction

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STJ Detector fabrication in cross section

Photoresist etch mask, dry and wet etching to pattern strips …

… and detectors Lift-off mask for SiO2 … … and wiring

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I-V characteristics

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Response to red LED

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VUV spectrometer 10 - 30 eV

Ta-STJ

20’000 e/eV@ 300 mK

IR rejection !

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imaging with diffusion

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energ

ypositio

n

5.9 keV

6.4 keV

Substrate Phonons

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1.0

0.8

0.6

0.4

0.2

0.0

Norm

aliz

ed c

ounts

7.06.56.05.55.0

Energy (keV)

Silicon detector, 300K, commercial tunnel junction, 550 mK, PSI calorimeter, 100 mK, PSI

STJ, 500 mK

calorimeter, 100 mK

Si, 300 K

Summary Mn-X-ray results at PSI

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Kurakados 40series x 20paralle STJ’s, each 50m Diameter

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Future plans at PSI

• Close SIS-STJ work in 2005

• Thesis I. Jerjen: Sensitivity of Ta-STJ to optical light

• Measure 10-50eV photons

• Collaboration with Kurakado on series-STJ fabrication and testing

• SIN Junction studies

• + S being Absorber, small gap

• + N being Si (degenerated doped).

• ++ Profit from Si technology

• + No magnetic fields

• - no backtunneling

• - low temperature (<100mK)