1 Medium energy ion scattering and elastic recoil detection analysis for processes in thin films and monolayers Lyudmila V. Goncharova, Sergey Dedyulin, Mitch Brocklebank Department of Physics and Astronomy, Western University , London, Ontario, Canada Collaborators: P. J. Simpson (UWO), J. Botton (McMaster U.), D. Londheer (NRC)
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Lyudmila V. Goncharova, Sergey Dedyulin, Mitch Brocklebank Department of Physics and Astronomy,
Medium energy ion scattering and elastic recoil detection analysis for processes in thin films and monolayers. Lyudmila V. Goncharova, Sergey Dedyulin, Mitch Brocklebank Department of Physics and Astronomy, Western University , London, Ontario, Canada. - PowerPoint PPT Presentation
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Medium energy ion scattering and elastic recoil detection analysis for processes in
thin films and monolayers
Lyudmila V. Goncharova, Sergey Dedyulin, Mitch Brocklebank
Department of Physics and Astronomy, Western University ,
London, Ontario, Canada
Collaborators: P. J. Simpson (UWO), J. Botton (McMaster U.), D. Londheer (NRC)
Duoplasmatron Source
Sputter Source
Injector MagnetTandetron Accelerator
High Energy Magnet
RBS Chamber
ERD Chamber
MEIS Chamber
Implant Chamber
Group III,V Molecular BeamEpitaxy System
Group IV Molecular BeamEpitaxy System
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1.7 MeV Tandetron Accelerator Facility at UWO
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2D MEIS Data
2
21
122
122 cossin
MM
MMMEE od
•mass (isotope) specific•quantitative (2% accuracy)•depth sensitive (at the sub-nm scale)
Energy distributions:
77 84 910
500
1000
1500
O(buried)
Zr(buried)
O(surf)
Ge(buried)Si
(surf)
Yie
ld
Energy [keV]
SiO2/ Si /ZrO
2/GeO
x/Ge(001)
Experiment Total Spc
100keV H+, SiO2/poly-Si/ZrO2/Ge(100)
H+ E
nerg
y [k
eV]
Angle 115 120 125 130 135 140
H+ Y
ield
Angle [degree]
Energy distribution for one angle
Angular distribution for one element
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Outline
• Motivation
• Medium Energy Ion Scattering (MEIS) - Nucleation and growth in Si and Ge quantum systems
• Medium Energy Elastic Recoil Detection (ME-ERD) - H-terminated Si(001)
- H in HfSiOx ultra-thin films /Si(001)
• Conclusions and future directions
For the Age of Photonics…
• Continued developments in – miniaturization, – speed and complexity
• Wiring bottleneck• Need to merge electronics and photonics• III-V compounds dominate optoelectronics• Hybrid technologies are being used• OEICs and OICs incorporating Si/Ge detectors,
modulators and waveguides now functional
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D.J. Paul, Semicond. Sci. Tech. 19, R75 (2009)
Overcoming the indirect band gap
• Alloying Ge with Si and/or C• Stress• Brillouin zone folding
• Rare earth and transition metal impurity centres