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Low-Power SRAM Using 0.6 um Technology Andrew Ashworth Jonathan Chen Matt Williams
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Low-Power SRAM Using 0.6 um Technology

Jan 03, 2016

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Low-Power SRAM Using 0.6 um Technology. Andrew Ashworth Jonathan Chen Matt Williams. Introduction. Metrics: Power(mW), Delay(ns), Area(mm 2 ) Low Power SRAM: (total power) 2 * delay * area SRAM size of 1 Mb Word size of 32 bits One read or one write access per cycle. CLK. CLK1. CLK2. - PowerPoint PPT Presentation
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Page 1: Low-Power SRAM Using 0.6 um Technology

Low-Power SRAM Using0.6 um Technology

Andrew AshworthJonathan ChenMatt Williams

Page 2: Low-Power SRAM Using 0.6 um Technology

Introduction

• Metrics: Power(mW), Delay(ns), Area(mm2)• Low Power SRAM:

(total power)2 * delay * area

• SRAM size of 1 Mb• Word size of 32 bits• One read or one write access per cycle

Page 3: Low-Power SRAM Using 0.6 um Technology

Clock

• Two-phase non-overlapping clock generator

CLK CLK1

CLK2

Page 4: Low-Power SRAM Using 0.6 um Technology

Array Architecture• Block Selector, Transmission Gates, and Positive

Edge Triggered Register

5:32

<4:7>

<0:3>

<8:11>

<12:15>

<16:19>

<20:23>

<24:27>

<28:31>

0 1 2 3

4 5 6 7

8 9 10 11

12 13 14 15

16 17 18 19

20 21 22 23

24 25 26 27

28 29 30 31

A14A13A12A11A10

Word-line Enable Bit

Page 5: Low-Power SRAM Using 0.6 um Technology

Block Architecture

• Hierarchical word line with divided bit line

Local BL

Local BLB

Local WL

Local WL

Transistors use 0.5 um technology. Sizes shown represent widths of devices.

1.5um1.5um

1.5um

4.5um

4.5um

To local word-line

Numbers shown by inverters are ratios relative to minimum sized inverter

1 4

A9A8A7A6

A5A4A3A2

Enable bit from 5:32 Decoder

4:16

4:16

1 4

1 4

Enable bit

Enable bit

4:16

4:16

Page 6: Low-Power SRAM Using 0.6 um Technology

Block Architecture Continuedfrom Figure 5

Global Bit-Line Global Bit-Line Bar

Divided bit line approach with 16 bit cells per local bit line

Page 7: Low-Power SRAM Using 0.6 um Technology

Drowsy Cache

•An extra 6t bit cell holds whether block is asleep or awake and selects corresponding Vdd•Requires extra dc-dc converters on chip

Page 8: Low-Power SRAM Using 0.6 um Technology

Layout

• Horizontal bit cell to maintain square block• We should have learned SKILL

Page 9: Low-Power SRAM Using 0.6 um Technology

Challenges

• Drivers• Clock generation – iterated through 3 designs

before finally settling on a pulsed NOR design.• Designing sense amp enable driver

Page 10: Low-Power SRAM Using 0.6 um Technology

Simulation

• Extracted parasitic capacitances from layout to build accurate array model

• Simulated model of one block to represent entire array

• Began with worst case 50C and SS to find stable clock

Page 11: Low-Power SRAM Using 0.6 um Technology

Results

• The SRAM correctly performed a write followed by a read at all process corners, and temperatures

• As VDD is scaled down, leakage power decreases by orders of magnitude. We have no reliable numbers as power simulations returned unrealistic results for 5V VDD

Page 12: Low-Power SRAM Using 0.6 um Technology

Results II

Page 13: Low-Power SRAM Using 0.6 um Technology

Metric

• Total Size: about 500mm^2• Average Power: about 9mW• Delay: about 35ns• Total Metric: 1.458 million

Page 14: Low-Power SRAM Using 0.6 um Technology

Questions?