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Low Energy Ion Beam andPlasma Modification of Materials
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
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Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
PART II: MICROWAVE ION SOURCESFOR DEPOSITION AND ETCHING
PROPERTIES OF SiO2 FILMS FABRICATED BY MICROWAVE ECRPLASMA PROCESSING WITH AND WITHOUT ENERGETIC PARTICLEBOMBARDMENT DURING FILM DEPOSITION PART I. FABRICATIONPROCESSES AND PHYSICAL PROPERTIES 69
T.T. Chau, S.R. Mejia, and K.C. Kao
STRUCTURAL AND INTERFACIAL CHARACTERISTICS OF THIN(<10 ran) SiO2 FILMS GROWN BY ELECTRON CYCLOTRONRESONANCE PLASMA OXIDATION ON [100] Si SUBSTRATES 75
Tai D. Nguyen, D.A. Carl, D.W. Hess,M.A. Lieberman, and R. Gronsky
*CUBIC BORON NITRIDE PREPARED BY AN ECR PLASMA 81Y. Osaka, M. Okamoto, and Y. Utsumi
THE ECR-PLASMA DEPOSITION OF SILICON NITRIDE ON ATUNNEL OXIDE 91
J.C. Barbour, H.J. Stein, and C.A. Outten
*ECR PLASMA ETCHING TECHNOLOGY FOR ULSIs 97Seiji Samukawa
THE MECHANISMS OF REACTIVE ION ETCHING OF SiOx (x<2)WITH ELECTRON CYCLOTRON RESONANCE AND KAUFMAN IONSOURCES 109
R.A. Kant, C.R. Eddy, Jr., and B.D. Sartwell
SHALLOW P+-N JUNCTION FABRICATION BY PLASMA IMMERSIONION IMPLANTATION 115
C.A. Pico, X.Y. Qian, E. Jones, M.A. Lieberman,and N.W. Cheung
ELECTRON CYCLOTRON RESONANCE HYDROGENATION OF POLY-SiTHIN FILM TRANSISTORS ON SiO2/Si SUBSTRATES 121
Gand Liu, Robert A. Ditizio, Stephen J. Fonash,and Nang Tran
ELECTRON CYCLOTRON RESONANCE HYDROGEN PLASMA INDUCEDDEFECTS IN THERMALLY GROWN AND SPUTTER DEPOSITED SiO2 127
W.L. Hallett, R.A. Ditizio, and S.J. Fonash
PART III: PROCESSING OF HIGH-TcTHIN FILMS AND INTERFACES
*THIN FILM GROWTH OF HIGH Tc SUPERCONDUCTORS BY MICRO-WAVE PLASMA ASSISTED REACTIVE EVAPORATION 135
Akira Tsukamoto, Masahiko Hiratani, ToshiyukiAida, Yoshinobu Tarutani, and Kazumasa Takagi
CRYSTALLINE ORIENTATION CONTROL IN Bi-Sr-Ca-Cu-0 THINFILMS 147
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
The Symposium on Low Energy Ion Beam and Plasma Modifica-tion of Materials was held at the Spring 1991 Material ResearchSociety Conference in Anaheim, CA, April 30 - May 2, 1991. Thissymposium was designed to show the wide range of materials whichcan be modified advantageously by low energy particles from ionbeam and plasma sources. The presentations from invitedspeakers are highlighted below. These invited talks set thetone and topical range of each session, and demonstrated theremarkable variety of properties which may be modified by ionand plasma methods.
The first session, on Fundamentals and Modeling, emphasizedbasic ion-material interactions, and was highlighted by twovideotapes of computer simulations, one of epitaxial Si growthfrom Si ions of energy 10-20 eV, by M. Kitabatake, and one ofcarbon ion deposition at 10-50 eV. These simulations enabledviewers to clearly visualize the seguence of a 10 eV ion settingthe target surface into oscillation, then finding its way to anepitaxial position. J. Biersack presented an overview of MonteCarlo simulations, including his recent extension of the widelyused TRIM code to model the growth of thin films under simul-taneous ion bombardment.
Recent developments in electron cyclotron resonance (ECR)sources and microwave-excited plasma sources were reviewed by L.Berry. The conditions of resonance which produce high iondensities at low energy were clarified, and it was shown thation densities up to 10% of the gas density are achievable at aninput of only 100 eV per ion. Applications of ECR sources toreactive ion etching were reviewed by S. Samukawa. Otherapplications included deposition of silicon nitride and silicondioxide, hydrogen passivation of Si, and deposition of boronnitride, which was described by Y. Osaka.
In a joint session with the Symposium on Interfaces inHigh-Temperature Superconducting Systems, talks by J. Kwo and A.Tsukamoto demonstrated the application of ECR sources to thesynthesis of YBaCuO and HoBaCuO. This improved method foroxygen incorporation enables these perovskite materials to besynthesized at temperatures as low as 500-680°C. A. Hebarddescribed how ion beam etching at glancing angle is successfulin thinning high-temperature superconductors to as little as afew lattice constants. A session on III-V materials includedthe application of ECR sources to the epitaxial growth of GaAsat temperatures as low as 350 °C on GaAs and 400°C on Si,described by N. Kondo. Selective growth of GaAs at 630°C wasalso demonstrated.
Ion beam techniques have dramatically improved the qualityof optical thin films. The techniques for controlling densityand refractive index were reviewed by U. Gibson, and recentresults on modulating the index of ZrF4 from 1.5 to 1.8 byoxygen ion bombardment were shown. This approach is suitablefor the fabrication of graded index (GRIN) structures whilemaintaining planarity. Ferroelectric materials share many
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
processing challenges with the family of high-temperaturesuperconductors. A. Kingon showed how controlled ion beamsputtering allows optimized deposition from dual targets of K02
and Nb to produce high quality films of ferroelectric KNbO3 at500-600°C.
Polymers constitute another large class of materials easilymodified by ion bombardment. S. Molis reviewed the effects of500 eV argon ion bombardment of polyimide and showed howinfrared spectroscopy reveals a shift to a more carbon-richsurface layer which is one thousand times more resistant towater absorption than non-bombarded polyimide.
The symposium concluded with a session on metal filmmodification. A talk on multilayer magnetic films by M. Sendashowed how magnetic anisotropy and coercivity respond dramati-cally to changes in ion beam deposition conditions. The themeof the symposium was well illustrated in the wide range ofmaterials presented. Low energy ion beam and plasma treatmentof materials causes a surprising variety of property changes,and continues to be a powerful resource for the materialsscientist.
James M.E. HarperKiyoshi MiyakeJohn R. McNeilSteven M. Gorbatkin
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
We greatly appreciate the financial support of thissymposium provided by:
ASTEX (Applied Science and Technology)Commonwealth Scientific CorporationHitachi Research LaboratoryIBM T.J. Watson Research CenterIon Tech, Inc.Lam Research, Inc.Matsushita Electric Industrial Co., Ltd.NEC VLSI Development DivisionNissin Electric Co., Ltd.NTT Optoelectronics LaboratoriesULVAC Japan, Ltd.
In addition to the invited speakers listed in the Preface,we thank the following session moderators for their help inrunning the symposium and encouraging discussion:
Richard S. PostSteven M. GorbatkinJames M.E. HarperDavid A. RudmanJun AmanoDavid B. PokerAngus Kingon
We gratefully acknowledge the assistance of Vicki Barnes ofOak Ridge National Laboratory during the preparation of thefinal proceedings.
We also thank our institutions, IBM T.J. Watson ResearchCenter, Hitachi Research Laboratory, the University of NewMexico and Oak Ridge National Laboratory, for supporting ouractivities as co-organizers of this symposium and for supportingthe goals of the Materials Research Society.
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information
Volume 230—Phase Transformation Kinetics in Thin Films, M. Chen,M. Thompson, R. Schwarz, M. Libera, 1991, ISBN: 1-55899-124-7
Volume 231—Magnetic Thin Films, Multilayers and Surfaces, H. Hopster,S.S.P. Parkin, G. Prinz, J.-P. Renard, T. Shinjo, W. Zinn, 1991,ISBN: 1-55899-125-5
Volume 232—Magnetic Materials: Microstructure and Properties, T. Suzuki,Y. Sugita, B.M. Clemens, D.E. Laughlin, K. Ouchi, 1991,ISBN: 1-55899-126-3
Volume 233—Synthesis/Characterization and Novel Applications of MolecularSieve Materials, R.L. Bedard, T. Bein, M.E. Davis, J. Garces,V.A. Maroni, G.D. Stucky, 1991, ISBN: 1-55899-127-1
Volume 234—Modern Perspectives on Thermoelectrics and Related Materials,D.D. Allred, G. Slack, C. Vining, 1991, ISBN: 1-55899-128-X
Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society.
Cambridge University Press978-1-558-99117-0 - Materials Research Society Symposium Proceedings Volume 223: Low Energy Ion Beam and Plasma Modification of Materials: Symposium held April 30-May 2, 1991, Anaheim, California, U.S.A.Editors: James M.E. Harper, Kiyoshi Miyake, John R. McNeil and Steven M. GorbatkinFrontmatterMore information