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Electronics Spring 2020 Ran Yang http://physics.wm.edu/~ran/ Lecture v
24

Lecture v - Physics

Apr 25, 2022

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Page 1: Lecture v - Physics

E lectron ics

S p r i n g 2 0 2 0 R a n Ya n g

http://physics.wm.edu/~ran/

L e c t u r e v

Page 2: Lecture v - Physics

What are we doing

every week?

Design

• Pre-lab Homework

• Lecture

Simulation

• Pre-lab Homework

• Lecture

Build in real world

• Lab

Trouble Shooting

• Lab

• Simulation

Page 3: Lecture v - Physics

Midterm Exam

Ran Yang || [email protected]

• We do have class on 3/2 Monday

• We do have lab 6 on 3/3, 3/4 and 3/5

• The exam will happen in the first 50 minutes of the lab 6

• Talk to me if you have accommodation pleaseTime

• Lab 1 to Lab 5 homework/lab , Textbook Chapter 1 to 7, and Chapter 14

• As long as you understand your design homework and your lab procedure you are good to go

• Circuit design, Circuit analysis & troubleshooting and physics/mathContents

• Closed book & closed notes

• A pencil, an eraser and a ruler

• A scientific calculator with its battery full

• If you use a scientific calculator on your phone, the phone must be set to airplane mode

• I do not provide a formula sheet

Rules

Page 4: Lecture v - Physics

Bipolar Junct ion Trans is tor

Read Chap te r 6&7

Ran Yang || [email protected]

Page 5: Lecture v - Physics

Trans i s to r

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• The bottom region is called the emitter

• the middle region is the base

• the top region is the collector

A transistor has three doped regions

• the base region is much thinner as compared to the collector and emitter regions.

• npn device

• Recall that the majority carriers are free electrons in n-type material and holes in p-type material.

an actual transistor

• the emitter is heavily doped.

• the base is lightly doped.

• The doping level of the collector is intermediate

• The collector is physically the largest of the three regions

Doping

Page 6: Lecture v - Physics

Trans i s to r

Ran Yang || [email protected]

• Some of the free electrons in the n region will diffuse across the junction and recombine with the holes in the p region.

• Visualize the free electrons in each n region crossing the junction and recombining with holes.

• For each of these depletion layers, the barrier potential is approximately 0.7 V at 25°C

Depletion layer

Page 7: Lecture v - Physics

B iased Trans i s to r

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• When the subscripts are the same, the voltage represents a source (𝑉𝐵𝐵 𝑎𝑛𝑑 𝑉𝐶𝐶).

• When the subscripts are different, the voltage is between the two points (𝑉𝐵𝐸 , 𝑉𝐶𝐸).

Double Subscripts

• Single subscripts are used for node voltages, that is, voltages between the sub-scripted point and ground

• 𝑉𝐶𝐸 = 𝑉𝐶 − 𝑉𝐸• 𝑉𝐶𝐵 = 𝑉𝐶 − 𝑉𝐵• 𝑉𝐵𝐸 = 𝑉𝐵 − 𝑉𝐸

Signal subscripts

Page 8: Lecture v - Physics

Trans i s to r cu r ren t s

Ran Yang || [email protected]

• When the subscripts are the same, the voltage represents a source (𝑉𝐵𝐵 𝑎𝑛𝑑 𝑉𝐶𝐶).

• When the subscripts are different, the voltage is between the two points (𝑉𝐵𝐸 , 𝑉𝐶𝐸 ).

Double Subscripts

• Single subscripts are used for node voltages, that is, voltages between the sub-scripted point and ground

•𝑉𝐶𝐸 = 𝑉𝐶 − 𝑉𝐸•𝑉𝐶𝐵 = 𝑉𝐶 − 𝑉𝐵•𝑉𝐵𝐸 = 𝑉𝐵 − 𝑉𝐸

Signal subscripts

Current

Beta

Page 9: Lecture v - Physics

B iased Trans i s to r Cur ren t

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• When the subscripts are the same, the voltage represents a source (𝑉𝐵𝐵 𝑎𝑛𝑑 𝑉𝐶𝐶).

• When the subscripts are different, the voltage is between the two points (𝑉𝐵𝐸 , 𝑉𝐶𝐸).

Double Subscripts

• Single subscripts are used for node voltages, that is, voltages between the sub-scripted point and ground

• 𝑉𝐶𝐸 = 𝑉𝐶 − 𝑉𝐸• 𝑉𝐶𝐵 = 𝑉𝐶 − 𝑉𝐵• 𝑉𝐵𝐸 = 𝑉𝐵 − 𝑉𝐸

Signal subscripts

• 𝑉𝐸 =

𝐼𝐵 =

Page 10: Lecture v - Physics

Trans i s to r Operat ion

Ran Yang || [email protected]

• the voltage represents a source (𝑉𝐵𝐵 𝑎𝑛𝑑 𝑉𝐶𝐶).

• the voltage is between the two points (𝑉𝐵𝐸 , 𝑉𝐶𝐸).

Double Subscripts

• Single subscripts are used for node voltages, that is, voltages between the sub-scripted point and ground

• 𝑉𝐶𝐸 = 𝑉𝐶 − 𝑉𝐸• 𝑉𝐶𝐵 = 𝑉𝐶 − 𝑉𝐵• 𝑉𝐵𝐸 = 𝑉𝐵 − 𝑉𝐸

Signal subscripts

𝐼𝐵 =𝑉𝐵𝐵 − 𝑉𝐵𝐸

𝑅𝐵

𝑉𝐶𝐸 = 𝑉𝐶𝐶 − 𝐼𝐶𝑅𝐶

• the region in the middle where VCE is between 1 and 40 V.

• the emitter diode is forward biased, and the collector diode is reverse biased.

• the collector is gathering almost all the electrons that the emitter has sent into the base. This is why changes in collector voltage have no effect on the collector current. This region is called the active region.

• the collector current is constant in this region.

Active Region - Normal operation

• The transistor should never operate in this region

• because it will be destroyed

Breakdown Region

• the early rising part of the curve, where VCE is between 0 V and a few tenths of a volt.

• the collector diode has insufficient positive voltage to collect all the free electrons injected into the base.

• In this region, the base current IB is larger than normal and the current gain 𝛽 is smaller than normal

Saturation Region

Page 11: Lecture v - Physics

Trans i s to r Operat ion

Ran Yang || [email protected]

Active Region - Normal operation

Breakdown Region

Saturation Region

• Notice that the base current is zero, but there still is a small collector current.

• On a curve tracer, this current is usually so small that you cannot see it. We have exaggerated the bottom curve by drawing it larger than usual.

• This bottom curve is called the cutoff region of the transistor, and the small collector current is called the collector cutoff current.

Cutoff Region

Page 12: Lecture v - Physics

Trans i s to r Operat ion Reg ions

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• Amplifier

• the active region is called the linear region because changes in the input signal produce proportional changes in the output signal.

Active Region

• Never

Breakdown Region

• Digital switching

Saturation Region / Cutoff Region

Page 13: Lecture v - Physics

Trans i s to r Example

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What's the collector - emitter voltage 𝑉𝐶𝐸?

Page 14: Lecture v - Physics

Trans i s to r 2N3904 Datasheet

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Page 15: Lecture v - Physics

Trans i s to r B ias i ng

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Emitter Bias

Page 16: Lecture v - Physics

Trans i s to r B ias i ng S imu la t ion

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Page 17: Lecture v - Physics

LED Dr iver

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Emitter Biased

Page 18: Lecture v - Physics

LED Dr iver S imu la t ion

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Page 19: Lecture v - Physics

B lown-fuse i nd i catorPa g e 2 4 7

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Page 20: Lecture v - Physics

Vol tage-d iv ider B ias (VDB)

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Most widely used biasing circuit

Page 21: Lecture v - Physics

VDB S imu la t ion

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Page 22: Lecture v - Physics

VDB des ign gu ide l i ne

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Operation point Q at the middle of the load line

Page 23: Lecture v - Physics

W h a t h a ve we l e a r n e d

t o d ay ?

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What’s a transistor

Transistor biasing

Emitter biasing

LED driver – current source

VDB

VDB design tips

Page 24: Lecture v - Physics

What t o s t udy fo r n ex t week ?R e a d C h a p t e r 8 a n d 9

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Review Lab 1 to Lab 5

Basic BJT AmplifiersSmall-Signal operation

Analyzing an Amplifier

Voltage gainThe loading effect of input impedance

CC amplifier Output impedance