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Out NMOS Operation in Cut off ,Linear and Satu Related Equations 1/27/2015 EEE C424/ tline uration mode /ECE C313 1
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Outline

• NMOS Operation in

Cut off ,Linear and Saturation mode

Related Equations

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Outline

Cut off ,Linear and Saturation mode

EEE C424/ECE C313 1

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Recap

• Physics of MOSFET

• NMOS

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Recap

EEE C424/ECE C313 2

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CMOS DESIGN

•The operation of PMOSto the NMOS transistor,that the majority carriersvoltages are negative with

substrate.

MOSFET

CMOS DESIGN

PMOS transistor is analogoustransistor, with the exception

carriers are holes and thewith respect to the

MOSFET

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MOS Transistors

• Silicon, forms the basic starting material

• MOS structure is created by superimposing several layers of conducting,insulating and transistor forming materials

• CMOS technology provides two types of transistorsNegatively (-ve) diffused silicon that is rich in electrons :

Positively (+ve) doped silicon that is rich in holes :

CMOS DESIGN

MOS Transistors

Silicon, forms the basic starting material

structure is created by superimposing several layers of conducting,insulating and transistor forming materials

technology provides two types of

ve) diffused silicon that is rich in electrons : NMOS

Positively (+ve) doped silicon that is rich in holes : PMOS

CMOS DESIGN

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MOSFET

Perspective View

MOSFET

Cross sectional View

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Operation of nmos with no gate voltage applied

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Channel Formation In NMOS

Operation of nmos with no gate voltage applied

6

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Accumulation mode [ 0 < V

7

Accumulation mode [ 0 < Vg ]

Vg = Vgs = Gate Voltage

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Operation of nmos with gate voltage applied

Operation of nmos with gate voltage applied

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What happens if Gate Voltage V

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What happens if Gate Voltage Vg = Vgs is increased ?

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Depletion Mode [ 0<V

10

Depletion Mode [ 0<Vg<Vt ]

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Inversion mode [V

Enhacement NMOS

11

Inversion mode [Vg >Vt ]

Enhacement NMOS

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Copyright © 2005 Pearson Addison-Wesley. All rights reserved.

2-1212

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MOSFET

NMOS PMOS

Enhacement NMOS Depletion NMOS

13

MOSFET

NMOS PMOS

Depletion NMOS

Enhacement PMOS Depletion PMOS

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Applying a small VApplying a small VDS

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ID Vs Vds Characterstics when Vsmall (Linear Region)

Characterstics when Vds

small (Linear Region)

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Chapter 4 MOS field-Effect Transistors (MOSFETs)

Figure 4.5Operation as VEffect Transistors (MOSFETs)

Figure 4.5Operation as VDS increased

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Applying a small VApplying a small VDS

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ID Vs Vds Characterstics when Vsmall (Linear Region)

Conductance of channel propotional to V(Vov,overdrive voltage

Characterstics when Vds

small (Linear Region)

Conductance of channel propotional to VGS-Vt

,overdrive voltage)

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Chapter 4 MOS field-Effect Transistors (MOSFETs)

Figure 4.5Operation as V

VGS

•The voltage between the gate and points along the channel decreases from VGS

VGS – VDS at the drain end

Effect Transistors (MOSFETs)

Figure 4.5Operation as VDS increased

VGS - VDS

The voltage between the gate and points along the at the source end to

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ID Vs VDS Characterstics

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Characterstics

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Channel isPinched off point

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Effect on Channel as V

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Effect on Channel as VDS increased

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Chapter 4 MOS field-Effect Transistors (MOSFETs)

Figure 4.15Channel Length ModulationEffect Transistors (MOSFETs)

Figure 4.15Channel Length Modulation

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iD Vs VDS relationship

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relationship

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Current Equation in Linear/Triode region

• Linear Region :

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saturation

Current Equation in Linear/Triode region

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• Linear Region :

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Substituting VGS – Vt = V

Current Equation in saturation region

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VDS

saturation

Current Equation in saturation region

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I-V Characteristics of MOSFETV Characteristics of MOSFET

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HomeWork

• Derive Current equation in linear and saturation mode for NMOS

(Ref: Page 243 Sedra Smith)

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HomeWork

Derive Current equation in linear and saturation mode for NMOS

(Ref: Page 243 Sedra Smith)

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Drain Current

• ID α W/L (Aspect Ratio)

α

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Drain Current

W/L (Aspect Ratio)

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NMOS Transistor

CMOS DESIGN

NMOS Transistor

CMOS DESIGN

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NMOS Transistor - Symbolic RepresentationSymbolic Representation

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NMOS Transistor with vNMOS Transistor with vGS and vDS applied

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iD - vDS Characterstics

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Triode Region Saturation Region

Channel isPinched off

Characterstics

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Saturation Region

vGS= vt+ 0.5

vGS= vt+ 1.0

vGS= vt+ 1.5

vGS= vt+ 2.0Channel isPinched off

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iD - vDS CharactersticsCharacterstics