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Layout Generations VP

Apr 05, 2018

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    LAYOUTGENERATIONS

    Physical Design

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    What is a technology ?

    Technology is a set of rules which the designer

    follows for laying out a design

    This gives all the set of rules which we shouldFollow in order to get desired functionality

    This specifies the distance that is to be maintained

    Between two layers or two components in a chip

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    Design rules provides a methods for designing a circuit in silicon

    Design rules are the communication linkbetween the designer

    specifying the requirements and the fabricator

    An abstraction between the traditional transistor schematic and the

    layout (Stick diagrams) helps in organizing the layout design

    Stick diagrams can be drawn much faster than layout

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    Gnd

    VDD

    xx

    X

    X

    X

    X

    VDD

    xx

    Gnd

    Stick

    Diagram

    Stick Diagrams

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    Stick DiagramsStick diagrams are a means of capturing topography and layer

    information using simple diagrams.

    Stick diagrams convey layer information through color codes (or

    monochrome encoding).

    Acts as an interface between symbolic circuit and the actual

    layout.

    Mask layouts (Compatible with the fabrication processes) can be

    easily obtained from Stick diagrams

    Shows all components/vias.

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    Provides easy approach to performing simple CMOS circuitlayouts

    Helps in planning physical design before using the actual

    CAD tool

    Complicated wiring of gates and cells is often easier to

    visualize using stick diagrams

    Helps in visualizing the signal flow in complex networks

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    Stick diagrams

    Shows relative placement of components.

    Goes one step closer to the layout

    Helps plan the layout and routing

    A stick diagram is a cartoon of a layout.

    Stick diagrams doesnot shows

    Exact placement of components

    Transistor sizes Wire lengths, wire widths, tub boundaries.

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    Gnd

    VDD

    xx

    X

    X

    X

    X

    VDD

    xx

    Gnd

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    metal 1

    poly

    ndiff

    pdiff

    Stick layers

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    Stick DiagramsRules1. When two or more sticks of the same type cross or touch each

    other that represents electrical contact.

    2. When two or more sticks ofdifferent type crosses or touch each

    other there is no electrical contact. (If electrical contact is needed we have to

    show the connection explicitly).

    1. When a poly crosses diffusion it represents a transistor.

    Note: If a contact is shown then it isnot a transistor.

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    4. In CMOS a demarcation line is drawn to avoid touching of p-

    diff with n-diff. All pMOS must lie on one side of the line and all

    nMOS will have to be on the other side. Demarcation line

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    Lambda Based Design RulesDesign rules based on single parameter,

    Interface between designer and process engineer

    Guidelines for constructing process masks

    Minimum feature size is defined as 2

    scalable design rules: lambda parameter

    Used to preserve topological features on a chip

    Prevents shorting, opens, contacts from slipping out of area to be

    contacted

    Design rules specify geometry of masks that provide

    reasonable yield

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    Minimum width of n-Diffusion: 2

    Minimum width of p-Diffusion: 2

    Minimum width of polysilicon: 2

    Minimum width of Metal1 : 3

    Minimum width of Metal2 : 4

    Design rules for CMOS wires

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    Diffusion/diffusion: 3

    Poly/poly: 2

    Poly/diffusion: 1

    Via/via: 2

    Metal1/metal1: 3

    Metal2/metal2: 4

    Metal3/metal3: 4

    Spacing

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    Minimum size of n-mos enhancement transistor:

    2 x 2

    Minimum size of p-mos enhancementtransistor: 2 x 2

    Contact area: 2 x 2

    Contact Spacing: 2

    Overlap of diffn or poly over contact:

    Design rules for Transistors and

    contacts

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    Contacts (Vias)

    4

    1

    4

    2

    Types of via: metal1/diff, metal1/poly, metal1/metal2.

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    Overlap Rules for Contact cuts

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    P-well width : 4

    Overlap of internal diffusion: 3

    Spacing to external diffusion: 5

    Overlap of P+ mask over diffusion : 2

    Design rules for p-Well and P+ mask

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    A CMOS Inverter

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    A CMOS NAND2 Gate

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    CMOS NOR2 Gate

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    CMOS NAND3 Gate

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    The transistors can be placed in the layout as individual devices

    Groups with shared polysilicon gate lines

    Groups with shared drain/source regions

    Shared drain/source regions among several transistorsis

    the area efficient placement and reduces wiring

    complexity

    Shared drain/source regions is always not possible to link

    transistors

    Layout optimization

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    Graph theory is used for transistor placement in a more

    structured manner

    Here drain and source of MOSFET are translated to a nodes

    called vertices

    The transistor is represented as edge

    Layout optimization

    x

    y

    vertex

    vertex

    x

    y

    Edge

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    Euler Graph is used for optimum placement and wiring

    of circuits

    To constructEuler Graph, start with a CMOScircuit and select a starting vertex

    Find common Euler path for pull-up and pull-down

    devices

    If it is possible to trace the entire graph (pull-up and

    pull down) with edge passing only once then it is

    possible to use shared regions

    Layout optimization

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    Pull-up: A-B-C-D

    Pull-down: A-B-C-D

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    There may be several different valid stick diagrams for the same

    logic gate. By interchanging the nMOSFETs controlled by C

    and D, the Euler path can also be chosen as follows.

    This results in an equally good but different stick diagram.

    Pull-up: A-B-C-D

    Pull-down: A-B-C-D

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    C

    A B

    X= C (A + B)

    B

    A

    C

    i

    j

    j

    VDDX

    X

    i

    GND

    AB

    C

    PUN

    PDN

    Logic Graph

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    Two Versions of C (A + B)

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    The stick diagram at the left

    (done with arbitrary gate

    ordering) gives a very non-

    optimum layout for the

    CMOS gate above.

    Layout with non-Optimum

    Gate Ordering

    Layout with Optimum Gate

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    By reordering the input gates as E-D-A-B-C, we

    can obtain an optimum layout of the given CMOS

    gate with single actives for both NMOS and PMOS

    devices

    Layout with Optimum GateOrdering

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