1 [Supplementary material] Large ferroelectric polarization of TiN/Hf 0.5 Zr 0.5 O 2 /TiN capacitors due to stress-induced crystallization at low thermal budget Si Joon Kim 1 , Dushyant Narayan 1 , Jae-Gil Lee 1 , Jaidah Mohan 1 , Joy S. Lee 1 , Jaebeom Lee 1 , Harrison S. Kim 1 , Young-Chul Byun 1 , Antonio T. Lucero 1 , Chadwin D. Young 1 , Scott R. Summerfelt 2 , Tamer San 2 , Luigi Colombo 2 , and Jiyoung Kim 1,* 1 Department of Materials Science and Engineering, The University of Texas at Dallas, 800 West Campbell Road, Richardson, Texas 75080, United States 2 Texas Instruments, 13121 TI Blvd, Dallas, Texas 75243, United States Keywords Ferroelectric random access memory, Hf0.5Zr0.5O2, Atomic layer deposition, Stress-induced crystallization, Low thermal budget process *Electronic mail: [email protected]
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1
[Supplementary material]
Large ferroelectric polarization of TiN/Hf0.5Zr0.5O2/TiN capacitors due to
stress-induced crystallization at low thermal budget
Si Joon Kim1, Dushyant Narayan1, Jae-Gil Lee1, Jaidah Mohan1, Joy S. Lee1, Jaebeom Lee1,
Harrison S. Kim1, Young-Chul Byun1, Antonio T. Lucero1, Chadwin D. Young1, Scott R.
Summerfelt2, Tamer San2, Luigi Colombo2, and Jiyoung Kim1,*
1Department of Materials Science and Engineering, The University of Texas at Dallas,
800 West Campbell Road, Richardson, Texas 75080, United States
2Texas Instruments,
13121 TI Blvd, Dallas, Texas 75243, United States
Keywords
Ferroelectric random access memory, Hf0.5Zr0.5O2, Atomic layer deposition, Stress-induced