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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 1

    Midterm Exam Statistics

    0

    1

    2

    3

    4

    5

    6

    10 15 16 17 17.5 18

    Grade

    Max.=20

    Number ofOccurrence

    Mean=16

    Standard Deviation: 2

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 2

    EE247Lecture 18

    ADC Converters Sampling (continued)

    Sampling switch considerations

    Switch induced distortion

    Sampling switch conductance dependence on inputvoltage

    Clock voltage boosters

    Sampling switch charge injection & clock feedthrough

    Complementary switch

    Use of dummy device Bottom-plate switching

    Track & hold circuits

    T/H circuit incorporating gain & offset cancellation

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 3

    Summary of Last Lecture

    DAC Converters (continued) Dynamic element matching

    DAC reconstruction filter

    ADC Converters Sampling (continued)

    Sampling switch considerations

    Thermal noise due to switch resistance

    Sampling switch bandwidth limitations

    Switch induced distortion Sampling switch conductance dependence on input

    voltage

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 4

    Practical SamplingSummary So Far!

    2

    2

    212

    B

    B

    FS

    C k TV

    ( )1 forinON o o ox DD thDD th

    WVg g g C V V

    V V L

    = =

    0.72

    s

    RB f C

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 5

    Switch On-ResistanceSwitch MOS operating in triode mode:

    Vin

    C

    M1

    1VDD( ) ( )

    ( )( )

    0

    1,

    2

    1 1

    is a function of results in distortion

    What if instead of connecting G to a fixed voltage,

    DS

    D triodeDSD triode ox GS TH DS

    ON DS V

    ON

    ox GS th ox DD th in

    ON in

    dIW VI C V V V

    L R dV

    RW W

    C V V C V V V L L

    R V

    =

    = =

    a floating and fixed voltage source is connected to G & S?

    Desirable to maximize on voltage of GS Minimize ONR

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 6

    Boosted & Constant VGS Sampling

    VGS=const.

    OFF ON

    Increase gate overdrive voltage as

    much as possible + keep VGSconstant

    Switch overdrive voltage

    independent of signal level Error due to finite RON linear (to

    1st order)

    Lower Ron lower time constant

    Higher frequency of operation

    Gate voltage VGS =low

    Device off

    Beware of signal

    feedthrough due to parasiticcapacitors

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 7

    Constant VGS Sampling

    (= voltage @ the switch input terminal)

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 8

    Constant VGS Sampling Circuit

    VP1

    100ns

    M12

    M8

    M9

    M6

    M11Vin

    1.5V1MHz

    Chold

    P

    C1 C2

    M1 M2

    VDD=3V

    M3

    C3

    M5

    M4

    P

    This Example: All device sizes:10/0.35All capacitor size: 1pF (except for Chold)

    Note: Each critical switch requires a separate clock booster

    Vg

    Va Vb

    Sampling switch & C

    PB

    Ref: A. Abo et al, A 1.5-V, 10-bit, 14.3-MS/s CMOS Pipeline Analog-to-Digital Converter, JSSC

    May 1999, pp. 599.

    PB

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 9

    Clock Voltage Doubler Operation

    C1 C2

    M10ff

    M2Saturation

    mode

    VP1

    =clock

    PB

    VDD=03V

    P

    a) Startup

    03V

    03V 00

    03V 0(3V-VthM2)Acquire

    charge C1 C2

    M1Triode

    M2off

    VP1

    PB

    VDD=3V

    P

    3V0

    3V0

    3V03V (3V-VthM2) (6V-VthM2)

    b) Next clock transition

    03V

    VP1

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 10

    Clock Voltage Doubler Operation

    C1 C2

    M10ff

    M2

    VP1

    PB

    VDD=3V

    P

    03V

    03V

    3V ~6V

    3V0

    c) Next clock phase

    (6V-VthM2) (3V-Vth

    M2) ~ 3V

    M2Triode

    Acquires

    charge

    Both C1 & C2

    charged to

    VDD after one

    clock cycle

    Note that

    bottom plate

    of C1 & C2 is

    either 0 or

    VDD while top

    plates are atVDD or 2VDD

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 11

    Clock Voltage DoublerSimulation

    C1 C2

    M1 M2

    VP1Clock period: 100ns

    PB

    P_Boost

    VDD

    2VDD

    0

    VDD=3V

    R1 R2

    *R1 & R2=1GOhmdummy resistors added for simulation only

    P

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 12

    Constant VGS Sampler: Low

    Sampling switch M11

    is OFF

    C3 charged to ~VDDInput voltage

    source

    M3Triode

    C3

    M12

    Triode

    M4

    OFF

    VS11.5V1MHz

    Chold

    1pF

    ~ 2 VDD

    (boosted clock)

    VDD

    VDD

    OFF M11OFF

    DeviceOFF

    VDD=3V

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 13

    Constant VGS Sampler: High

    C3 previously

    charged to VDD

    M8 & M9 are on:

    C3 across G-S of M11

    M11 on with constant

    VGS = VDD

    C31pF

    M8

    M9 M11

    VS11.5V1MHz

    Chold

    1pF

    VDD

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 14

    Constant VGS SamplingSimulation

    Input Switch VGate

    Input Signal

    Chold Signal

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 15

    Boosted Clock SamplingComplete Circuit

    Ref: A. Abo et al, A 1.5-V, 10-bit, 14.3-MS/s CMOS Pipeline Analog-to-Digital Converter, JSSC

    May 1999, pp. 599.

    Clock Multiplier

    Switch

    M7 & M13 for

    reliability

    Remaining issues:

    -VGS constant only

    for Vin

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 17

    Advanced Clock Boosting Technique

    clk low Capacitors C1a & C1b charged to VDD

    MS off Hold mode

    Sampling

    Switch

    clk low

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 18

    Advanced Clock Boosting Technique

    Sampling

    Switch

    clk

    high Top plate of C1a & C1b connected to gate of sampling switch Bottom plate of C1a connected to VIN Bottom plate of C1b connected to VOUT VGS & VGD of MS both @ VDD & ac signal on G of MS average of VIN &

    VOUT

    clk high

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 19

    Advanced Clock Boosting Technique

    Gate tracks average of input and output, reduces effect of IR drop athigh frequencies

    Bulk also tracks signal reduced body effect (technology used allowsconnecting bulk to S) Reported measured SFDR = 76.5dB at fin=200MHz

    Ref: M. Waltari et al., "Aself-calibrated pipeline

    ADC with 200MHz IF-sampling frontend,"ISSCC 2002, Dig.Tech. Papers, pp. 314

    Sampling

    Switch

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 20

    Constant Conductance Switch

    Ref: H. Pan et al., "A 3.3-V 12-b 50-MS/s A/D converter in 0.6um CMOS with over 80-dBSFDR," IEEE J. Solid-State Circuits, pp. 1769-1780, Dec. 2000

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 21

    Constant Conductance Switch

    Ref: H. Pan et al., "A 3.3-V 12-b 50-MS/s A/D converter in 0.6um CMOS with over 80-dBSFDR," IEEE J. Solid-State Circuits, pp. 1769-1780, Dec. 2000

    OFF

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 22

    Constant Conductance Switch

    Ref: H. Pan et al., "A 3.3-V 12-b 50-MS/s A/D converter in 0.6um CMOS with over 80-dBSFDR," IEEE J. Solid-State Circuits, pp. 1769-1780, Dec. 2000

    ON

    M2 Constant current

    constant gds

    M1 replica of M2

    & same VGS

    as M2

    M1 also

    constant gds

    Note: Authors report requirement

    of 280MHz GBW for the opamp for

    12bit 50Ms/s ADC

    Also, opamp common-modecompliance for full input range

    required

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 23

    Switch Off-Mode Feedthrough Cancellation

    Ref: M. Waltari et al., "A self-calibrated pipeline ADC with 200MHz IF-sampling frontend,"ISSCC 2002, Dig. Techn. Papers, pp. 314

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 24

    Practical Sampling

    Vo

    C

    M1

    1

    Rsw = f(Vi) distortion

    Switch charge injection & clock feedthrough

    Vi

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 25

    Sampling Switch Charge InjectionSwitching from Track to Hold

    Vi VO

    Cs

    M1

    VG

    First assume Vi is a DC voltage When switch turns off offset voltage (V) induced on Cs Why?

    VG

    t

    VH

    Vi

    VL

    Vi +Vth

    VO

    Vi

    toff

    V

    t

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 26

    SamplingSwitch Charge Injection

    Channel distributed RC network formed between G,S, and D

    Channel to substrate junction capacitance distributed & voltage dependant

    Drain/Source junction capacitors to substrate or well voltage dependant

    Over-lap capacitance Cov =LDxWx Cox associated with G-S & G-D overlap

    MOS xtor operating in triode region

    Cross section view

    Distributed channel resistance &

    gate & junction capacitances

    S

    G

    D

    B

    LD

    L

    Cov Cov

    Cjdb

    Cjsb

    CHOLD

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 27

    Switch Charge InjectionSlow Clock

    Slow clock clock fall time >> device speed During the period (t- to toff) current in channel discharges channel

    charge acquired during the previous clock cycle into low

    impedance signal source

    Only source of error Clock feedthrough from Cov toCs

    VG

    t

    VH

    Vi

    VL

    Vi +Vth

    tofft-

    Device still

    conducting

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 28

    Switch Clock FeedthroughSlow ClockVG

    t

    VH

    Vi

    VL

    Vi +Vth

    VO

    Vi

    toff

    V

    t

    D

    Cov

    VG

    ( )

    ( )

    ( ) ( )

    ( )

    ( )

    ovi th L

    ov s

    ovi th L

    s

    o i

    ov ov ovo i i th L i th L

    s s s

    o i os

    ov ovos th L

    s s

    CV V V V

    C C

    CV V V

    CV V V

    C C CV V V V V V 1 V V C C C

    V V 1 V

    C Cwhere ; V V V

    C C

    = + +

    +

    = +

    = + =

    = + +

    = =

    t-

    Cs

    VO

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 29

    Switch Charge Injection & Clock FeedthroughSlow Clock- Example

    ( )

    ' 2ov ox th L

    ov

    s

    ovos th L

    s

    C 0.1 fF / C 9 fF / V 0.4V V 0

    C 1 0 x0 .1 fF / .1 %

    C 1pF Al lo wi ng 1/ 2L SB AD C re so lu ti on ~ 9bi t

    CV V V 0.4mV C

    = = = =

    = = =

    = Wn preferable)

    11B

    1

    1B

    VG

    t

    VH

    Vi

    VL

    1 1B

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 38

    Switch Charge InjectionComplementary Switch

    Fast Clock

    In fast clock case

    To 1st order, offset due to overlap caps

    cancelled for equal device width

    Input voltage dependant error worse!

    1

    1B

    VG

    t

    VH

    Vi

    VL

    ( )

    ( )

    ( )

    ch n n ox n H i th n

    th pch p p ox p i L

    ch pch no

    s s

    o i os

    n ox n p ox p

    s

    Q W C L V V V

    VQ W C L V V

    Q1 QV

    2 C C

    V V 1 V

    1 W C L W C L

    2 C

    =

    =

    = + +

    +

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 39

    Switch Charge InjectionDummy Switch

    Vi

    VO

    Cs

    t

    VH

    Vi

    VL

    VG VGB

    WM2=1/2WM1

    VG VGB

    M1 M2

    M1 M11 ch ov

    M 2 M 22 c h ov

    2 M1 2 1

    1Q Q Q

    2Q Q 2Q

    1For W W Q Q

    2

    +

    +

    = =

    Q1 Q2

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 40

    Switch Charge InjectionDummy Switch

    Vi

    VO

    Cs

    t

    VH

    Vi

    VL

    VG VGB

    Dummy switch same L as main switch but half W

    Main device clock goes low, dummy device gate goes high dummy

    switch acquires same amount of channel charge main switch needs tolose

    Effective only if exactly half of the charge stored in M1 is transferred to M2

    (depends on input/output node impedance) and requires good matching

    between clock fall/rise

    WM2=1/2WM1

    VG VGB

    M1 M2

    Q1 Q2

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 41

    Switch Charge InjectionDummy Switch

    Vi VOM1

    VG

    M2

    VGB

    To guarantee half of charge goes to each side create the same

    environment on both sides

    Add capacitor equal to sampling capacitor to the other side of the switch

    + add fixed resistor to emulate input resistance of following circuit

    Issues: Degrades sampling bandwidth

    CsCs

    R

    WM2=1/2WM1

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 42

    Dummy Switch Effectiveness Test

    Ref: L. A. Bienstman et al, An Eight-Channel 8 13it Microprocessor Compatible NMOS D/A

    Converter with Programmable Scaling, IEEE JSSC, VOL. SC-15, NO. 6, DECEMBER 1980

    Dummy switch

    W=1/2Wmain

    As Vin is

    increased Vc1-Vin

    is decreased

    channel charge

    decreased less

    charge injection

    Note large Ls

    good devicearea matching

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 43

    Switch Charge InjectionDifferential Sampling

    Vi+

    VO+

    Vi-

    VO-

    To 1st order, offset terms cancel

    Note gain error still about the same Has the advantage of better immunity to

    noise coupling and cancellation of evenorder harmonics

    Cs

    Cs

    ( )

    ( )

    ( )( )

    o o od i i id

    o o i ioc ic

    o i 1 os1

    o i 2 os2

    1 2od i d id 1 2 ic os1 os2

    V V V V V V

    V V V V V V

    2 2V V 1 V

    V V 1 V

    V V V V V V 2

    + +

    + +

    + +

    = =

    + += =

    = + +

    = + +

    += + + +

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 44

    Avoiding Switch Charge InjectionBottom Plate Sampling

    Switches M2 opened slightly earlier compared to M1

    Injected charge by the opening of M2 is constant since its DS voltageis zero & eliminated when used differentially

    Since Cs bottom plate is already open when M1 is opened

    No charge injected on Cs

    1aVH

    VL

    t

    1bViVO

    M1

    1b

    1a M2Cs

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 45

    Flip-Around Track & Hold

    vIN

    vOUT

    C

    S1A

    1D

    S2

    2

    S2A

    2

    S3

    1D

    1 S1vCM

    Concept based on bottom-

    plate sampling

    1

    21D

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 46

    Flip-Around T/H-Basic Operation1high

    vIN vOUT

    C

    S1A

    1D

    S2

    2

    S2A

    2

    S3

    1D

    1 S1vCM

    Charging C

    11D2

    Note: Opamp has to be

    stable in unity-gain

    configuration

    Q1

    =VIN

    xC

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 47

    Flip-Around T/H-Basic Operation

    2high

    vINvOUT

    C

    S1A

    1D

    S2

    2

    S2A

    2

    S3

    1D

    1 S1vCM

    Holding

    1

    21D

    Q2=VOUTxCVOUT=VIN

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 48

    Flip-Around T/H - Timing

    S1 opens earlier than S1A

    No resistive path from Cbottom plate to Gnd charge

    can not change

    "Bottom Plate Sampling"

    vIN

    vOUT

    C

    S1A

    1D

    S2

    2

    S2A

    2

    S3

    1D

    1S1

    vCM

    1

    21D

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 49

    Charge Injection

    At the instant of transitioning from track to hold

    mode, some of the charge stored in sampling

    switch S1 is dumped onto C

    With "Bottom Plate Sampling", only charge

    injection component due to opening of S1 and

    is to first-order independent of vIN Only a dc offset is added. This dc offset can be

    removed with a differential architecture

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 50

    Flip-Around T/H

    vIN vOUT

    C

    S1A

    1D

    S2

    2

    S2A

    2

    S3

    1D

    1 S1vCM

    Constant switch VGSto minimize distortion

    Note: Among all switches

    only S1A & S2A

    experience full

    input voltage swing

    1

    21D

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 51

    Flip-Around T/H S1 is chosen to be an n-channel MOSFET

    Since it always switches the same voltage, its on-resistance, RS1, is signal-independent (to first order)

    Choosing RS1 >> RS1A minimizes the non-linearcomponent of R = RS1A+ RS1 Typically, S1A is a wide (much lower resistance than S1) &

    constant VGS switch

    In practice size of S1A is limited by the (nonlinear) S/Dcapacitance that also adds distortion

    If S1As resistance is negligible delay depends only on S1resistance

    S1 resistance is independent of VIN error due to finitetime-constant independent of VIN

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 52

    Differential Flip-Around T/H

    Ref: W. Yang, et al. A 3-V 340-mW 14-b 75-Msample/s CMOS ADC With 85-dB SFDR at Nyquist Input, IEEE

    JOURNAL OF SOLID-STATE CIRCUITS, VOL. 36, NO. 12, DECEMBER 2001 1931

    Offset voltage associated with charge injection of S11 & S12 cancelled by differential

    nature of the circuit

    During input sampling phase amp outputs shorted together

    S11

    S12

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 53

    Differential Flip-Around T/H

    Gain=1 Feedback factor=1

    112

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 54

    Differential Flip-Around T/HIssues: Input Common-Mode Range

    Vin-cm=Vout_com-Vsig_com Amplifier needs to have large input common-mode compliance

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 55

    Differential Flip-Around T/HIssues: Input Common-Mode Range

    Vin-cm=Vout_com-Vsig_com

    Amplifier needs to have large input common-mode compliance

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 56

    Input Common-ModeCancellation

    Ref: R. Yen, et al. A MOS Switched-Capacitor Instrumentation Amplifier, IEEE JOURNAL OF

    SOLID-STATE CIRCUITS, VOL. SC-17, NO. 6,, DECEMBER 1982 1008

    Note: Shorting switch M3 added

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 57

    Input Common-Mode Cancellation

    Track mode ( high)VC1=VI1 , VC2=VI2Vo1=Vo2=0

    Hold mode ( low)Vo1+Vo2 =0

    Vo1-Vo2= -(VI1-VI2)(C1/(C1+C3))

    Input common-mode level removed

    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 58

    T/H + Charge Redistribution Amplifier

    Track mode: (S1, S3 on S2 off)

    VC1=VosVIN , VC2=0

    Vo=Vos

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    EECS 247- Lecture 18 Nyquist Rate ADCs-Sampling 2007 H.K. Page 59

    T/H + Charge Redistribution AmplifierHold Mode

    Hold/amplify mode (S1, S3 off S2 on)

    Offset NOT cancelled, but not amplified Input-referred offset =(C2/C1) x VOS, & often C2