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Journal of Flux Growth ISSN 1881-5316 Vol.14 No.1 June 2019
Contents
◆Foreword
Flux and Sol-Gel Method ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Hiromasa NISHIKIORI 1
◆Note
Single Crystal Growth of a Pb(Fe1/2Nb1/2)O3 Multiferroic Materials and Its Structural Evaluation by Using X-ray Fluorescence Holography ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Kohei YOKOCHI, Koji KIMURA, Norikazu TAMAOKI
Naohisa HAPPO, Makoto IWATA, Kouichi HAYASHI3
◆Review Special Issue: Solution Growth of Bulk and Thin Film SiC Crystals and Its Related Technologies
Control of Macrostep Formation in Solution Growth of 4H-SiC and High Quality Bulk Growth ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Takeshi MITANI, Kazuma ETO, Tomohisa KATO 7
High-Quality SiC Solution Growth and Application of Machine Learning・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Shunta HARADA, Zhu CAN, Yosuke TSUNOOKA
Kentaro KUTSUKAKE, Toru UJIHARA13
Growth of SiC Crystals by Flux-Mediated Epitaxy ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Naoki SANNODO, Aomi ONUMA, Ryo YAMAGUCHI
Shingo MARUYAMA, Yuji MATSUMOTO18
The Effect of Transient Variation of Carbon Content in the Seeding Process on the Crystal Quality in Solution Growth of SiC by TSSG Technique ・・・・・・・・・・・・・・・・・・・・・ Toshinori TAISHI, Naomichi TSUCHIMOTO, Masaru TAKAHASHI
Journal of Flux Growth ISSN 1881-5316 Vol.14 No.1 June 2019
Contents
◆Foreword
Flux and Sol-Gel Method ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Hiromasa NISHIKIORI 1
◆Note
Single Crystal Growth of a Pb(Fe1/2Nb1/2)O3 Multiferroic Materials and Its Structural Evaluation by Using X-ray Fluorescence Holography ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Kohei YOKOCHI, Koji KIMURA, Norikazu TAMAOKI
Naohisa HAPPO, Makoto IWATA, Kouichi HAYASHI3
◆Review Special Issue: Solution Growth of Bulk and Thin Film SiC Crystals and Its Related Technologies
Control of Macrostep Formation in Solution Growth of 4H-SiC and High Quality Bulk Growth ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Takeshi MITANI, Kazuma ETO, Tomohisa KATO 7
High-Quality SiC Solution Growth and Application of Machine Learning・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Shunta HARADA, Zhu CAN, Yosuke TSUNOOKA
Kentaro KUTSUKAKE, Toru UJIHARA13
Growth of SiC Crystals by Flux-Mediated Epitaxy ・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・・ Naoki SANNODO, Aomi ONUMA, Ryo YAMAGUCHI
Shingo MARUYAMA, Yuji MATSUMOTO18
The Effect of Transient Variation of Carbon Content in the Seeding Process on the Crystal Quality in Solution Growth of SiC by TSSG Technique ・・・・・・・・・・・・・・・・・・・・・ Toshinori TAISHI, Naomichi TSUCHIMOTO, Masaru TAKAHASHI