ORIGf_-_L P:.",:C_ IS OF POOR QUALITY N86-17844 N/P GaAs CONCENTRATOR SOLAR CELLS WITH AN IMPROVED GRID AND BUSBAR CONTACT DESIGN Gregory C. DeSalvo, Ervin H. Mueller, and Allen M. Barnett* University of Delaware Newark, Delaware 1. GaAs Solar Cell The m;0()r requiremenl- for a solar cell used in >Ira<,' ;,t,l,ii,'al i(>n- av,' high ('tliciency at AM() irra,liance and resistance to high energy radiatioJ,. _i_,li_ll_,_tr-,.ld,h,.x_ilh nlm)),lgapofl.43eV. i- ,)z,' ()f the mr)st cHicient smdight to electricity c()jjv(,),1,,;, 12-,',} _VI,,'IL_),,' _iml)h' diode model i- 11-_,,I l<) cah'u]ate eIIiciencies at AM() irradial)c,,. (4a.-\ .... iar ,',,II- at,' )))()r,' r_)(liation resistant )h_t_) q]icmJ -olar ceils told the N/P GaAs d(,vic(, hn- I,(,(,ii )',,l,,_r),,,l ),, ),,. u),)r,' rn(lia)ion resistant l],aT) similar P N solar cells I . This high('r r(,si< an('(, i- })r,)i,aid_ ,h)c I,)II)(, l'a('( tha( only 37(:(. ,,f t})(, cltrr(,nt is generated in the top N lay('r of (l),, .N ]> c(,ll ('()ml)m'(,,l l() (691 , in (h(, to I) layer ,d _P N .-.o]ar ceil. This to I) layer of the cell is m()s( al]',,c1(,,l i,v ra,lia(i(m. It has also l)e(,n lh(,or(,t ically calculated (hat the optinfized N P (l,,vi,'e will ],r()v(' (()lm_(,, hilzh,'r (,IIiciency (hun a similar P N device :2j [ I. This N,'P GaAs solar cell will have a thin (;nl' window lay('r t() r(,du,'e th(, minority carrier -urface recombination velocity from I(}(; ('m _ s(,c I<) I() I ('m 2 "s(,c. (;al > has I)_,(,i) chosen as the window layer material instead ,>f (/a_All ._As t() in_itre the formati()_ of ohmic c()_=tacts thal (h) not suffer degradation upon ('Xl)()sm'e to air. Th(, I)rol)]('m of |h(' 3.(6(( ]nt(ic(, mismalch between (;aAs and (;aP will he nfinin)ize,l by k('el)ing lh,, )hick_,(,ss of )1,(, ('I)itaxia]h grown window b_yer thin enough so thal its lattice constant may I,,, strain('(l (,h>licallv l() ('q_u_l that of the m_derlying (4 aA s. (;,.,) _:: _,n, ,)-(..,A. -\'D 10' ,n, : ( :,,)l,.,', or l ),__;_._., :Y_ 10 '_ Figure 1 ()ptimiz(.d N I' (_:,.\ .... i::: i i}_i- xv()rk SUpl)or((,d by (l,e NASA L(,xvi- I,',,-,.,_),I_ (,q)),, :,,i,,) ,-,,))i)';,( N.\(4:;-422. 5] https://ntrs.nasa.gov/search.jsp?R=19860008374 2020-03-30T00:40:29+00:00Z
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ORIGf_-_L P:.",:C_ IS
OF POOR QUALITYN86-17844
N/P GaAs CONCENTRATOR SOLAR CELLS
WITH AN IMPROVED GRID AND BUSBAR CONTACT DESIGN
Gregory C. DeSalvo, Ervin H. Mueller, and Allen M. Barnett*
University of Delaware
Newark, Delaware
1. GaAs Solar Cell
The m;0()r requiremenl- for a solar cell used in >Ira<,' ;,t,l,ii,'al i(>n- av,' high ('tliciency at AM()
irra,liance and resistance to high energy radiatioJ,. _i_,li_ll_,_tr-,.ld,h,.x_ilh nlm)),lgapofl.43eV.
i- ,)z,' ()f the mr)st cHicient smdight to electricity c()jjv(,),1,,;, 12-,',} _VI,,'IL_),,' _iml)h' diode modeli- 11-_,,I l<) cah'u]ate eIIiciencies at AM() irradial)c,,. (4a.-\ .... iar ,',,II- at,' )))()r,' r_)(liation resistant