Absolute Maximum Ratings Pre-Irradiation Symbol Parameter Value Units I D1 @ V GS = 4.5V, T C = 25°C Continuous Drain Current 75* A I D2 @ V GS = 4.5V, T C = 100°C Continuous Drain Current 75* I DM @ T C = 25°C Pulsed Drain Current 300 P D @ T C = 25°C Maximum Power Dissipation 125 W Linear Derating Factor 1.0 W/°C V GS Gate-to-Source Voltage +12/-10 V E AS Single Pulse Avalanche Energy 535 mJ I AR Avalanche Current 75 A E AR Repetitive Avalanche Energy 12.5 mJ dv/dt Peak Diode Recovery dv/dt 0.8 V/ns T J Operating Junction and -55 to + 150 °C T STG Storage Temperature Range Package Mounting Surface Temperature 300 (for 5s) Weight 3.3 (Typical) g SupIR-SMD IRHLNS87Y50 1 2021-03-22 Product Summary Part Number Radiation Level RDS(on) I D IRHLNS87Y50 100 kRads (Si) 2.5m75A* RADIATION HARDENED LOGIC POWER MOSFET SURFACE MOUNT (SupIR-SMD) Description For Footnotes, refer to the page 2. R 8 20V, N-CHANNEL TECHNOLOGY PD-97956 International Rectifier HiRel Products, Inc. Features 5V CMOS and TTL Compatible Fast Switching Low RDS(on) Low Total Gate Charge Simple Drive Requirements Surface Mount Hermetically Sealed Light Weight ESD Rating: Class 2 per MIL-STD-750, Method 1020 IR HiRel R8 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available. * Current is limited by package
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A ID2 @ VGS = 4.5V, TC = 100°C Continuous Drain Current 75*
IDM @ TC = 25°C Pulsed Drain Current 300
PD @ TC = 25°C Maximum Power Dissipation 125 W
Linear Derating Factor 1.0 W/°C
VGS Gate-to-Source Voltage +12/-10 V
EAS Single Pulse Avalanche Energy 535 mJ
IAR Avalanche Current 75 A
EAR Repetitive Avalanche Energy 12.5 mJ
dv/dt Peak Diode Recovery dv/dt 0.8 V/ns
TJ Operating Junction and -55 to + 150
°C TSTG Storage Temperature Range
Package Mounting Surface Temperature 300 (for 5s)
Weight 3.3 (Typical) g
SupIR-SMD
IRHLNS87Y50
1 2021-03-22
Product Summary
Part Number Radiation Level RDS(on) ID
IRHLNS87Y50 100 kRads (Si) 2.5m 75A*
RADIATION HARDENED LOGIC POWER MOSFET SURFACE MOUNT (SupIR-SMD)
Description
For Footnotes, refer to the page 2.
R 8
20V, N-CHANNEL TECHNOLOGY
PD-97956
International Rectifier HiRel Products, Inc.
Features
5V CMOS and TTL Compatible
Fast Switching
Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Surface Mount
Hermetically Sealed
Light Weight
ESD Rating: Class 2 per MIL-STD-750, Method 1020
IR HiRel R8 Logic Level Power MOSFETs provide simple solution to interfacing CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. The device is ideal when used to interface directly with most logic gates, linear IC’s, micro-controllers, and other device types that operate from a 3.3-5V source. It may also be used to increase the output current of a PWM, voltage comparator or an operational amplifier where the logic level drive signal is available.
* Current is limited by package
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Pre-Irradiation
International Rectifier HiRel Products, Inc.
Thermal Resistance Symbol Parameter Min. Typ. Max. Units
VSD Diode Forward Voltage ––– 1.0 V VGS = 0V, IS = 75A
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison.
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
For Footnotes, refer to the page 2.
Fig a. Worst Case Single Event Effect, Safe Operating Area
Radiation Characteristics
Table 2. Worst Case Single Event Effect Safe Operating Area
LET
(MeV/(mg/cm2))
Energy
(MeV)
Range
(µm)
VDS (V)
Ion @ VGS=0V @ VGS=-1V @ VGS=-2V
32.4 679 83.3 16 16 ––– Kr
61.7 584 48.7 14 14 ––– Xe
92.3 1156 65.1 12 12 ––– Au
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International Rectifier HiRel Products, Inc.
Fig 2. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
Fig 5. Typical On-Resistance Vs Gate Voltage Fig 6. Typical On-Resistance Vs Drain Current
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Pre-Irradiation
International Rectifier HiRel Products, Inc.
Fig 12. Maximum Drain Current Vs. Case Temperature Fig 11. Typical Source-Drain Diode Forward Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
Fig 7. Typical Drain-to-Source Breakdown Voltage Vs Temperature
Fig 8. Typical Threshold Voltage Vs Temperature
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
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Pre-Irradiation
International Rectifier HiRel Products, Inc.
Fig 14. Maximum Avalanche Energy Vs. Drain Current
Fig 13. Maximum Safe Operating Area
Fig 15. Maximum Effective Transient Thermal Impedance, Junction -to-Case