IRFP2907z 170A

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AUIRFP2907Z

08/13/2010

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AUTOMOTIVE GRADE

PD - 97550

Features

Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *

DescriptionSpecifically designed for Automotive applications,this HEXFETPower MOSFET utilizes the latest pro-

cessing techniques to achieve extremely low on-resistance per silicon area. Additional features of this

design are a 175C junction operating temperature,

fast switching speed and improved repetitive ava-lanche rating . These features combine to make this

design an extremely efficient and reliable device foruse in Automotive applications and a wide variety of

other applications.

HEXFET Power MOSFET

TO-247AC

SD

G

D

G D S

Gate Drain Source

HEXFET is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

Absolute Maximum RatingsStresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Theseare stress ratings only; and functional operation of the device at these or any other condition beyond those indicated inthe specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect devicereliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.Ambient temperature (TA) is 25C, unless otherwise specified.

Parameter Units

ID

@ TC

= 25CContinuous Drain Current, VGS @ 10V A

ID @ TC = 100C Continuous Drain Current, VGS @ 10V

IDM Pulsed Drain Current c

PD @TC = 25C Maximum Power Dissipation W

Linear Derating Factor W/C

VGS Gate-to-Source Voltage V

EAS Single Pulse Avalanche Energy (Thermally Limited) d mJ

EAS (tested) Single Pulse Avalanche Energy Tested Value i

IAR Avalanche Current c A

EAR Repetitive Avalanche Energy h mJ

TJ Operating Junction and C

TSTG Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case )

Mounting torque, 6-32 or M3 screw

Thermal Resistance

Parameter Typ. Max. Units

RJC Junction-to-Case j 0.49 C/W

RCS Case-to-Sink, Flat, Greased Surface 0.24

RJA Junction-to-Ambient 40

10 lbfin (1.1Nm)

310

2.0

20

520

690

See Fig.12a,12b,15,16

300

-55 to + 175

Max.

170120

680

V(BR)DSS

75V

RDS(on) max. 4.5m

ID 170AS

D

G

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Notes:

Repetitive rating; pulse width limited bymax. junction temperature. (See fig. 11).

Limited by TJmax, starting TJ = 25C,

L=0.13mH, RG = 25, IAS = 90A, VGS =10V.

Part not recommended for use above this value.

ISD 90A, di/dt 340A/s, VDD V(BR)DSS,

TJ 175C.

Pulse width 1.0ms; duty cycle 2%.

Coss eff. is a fixed capacitance that gives the samecharging time as Coss while VDS is rising from 0 to 80% VDSS.

Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive

avalanche performance.

This value determined from sample failure population,

starting TJ = 25C, L=0.13mH, RG = 25, IAS = 90A, VGS =10V.

R is measured at TJ of approximately 90C.

S

D

G

Static Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. UnitsV(BR)DSS Drain-to-Source Breakdown Voltage 75 V

VDSS/TJ Breakdown Voltage Temp. Coefficient 0.069 V/CRDS(on) Static Drain-to-Source On-Resistance 3.5 4.5 mVGS(th) Gate Threshold Voltage 2.0 4.0 V

gfs Forward Transconductance 180 S

IDSS Drain-to-Source Leakage Current 20 A

250

IGSS Gate-to-Source Forward Leakage 200 nA

Gate-to-Source Reverse Leakage -200

Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified)

Parameter Min. Typ. Max. UnitsQg Total Gate Charge 180 270

Qgs Gate-to-Source Charge 46 nC

Qgd Gate-to-Drain ("Miller") Charge 65

td(on) Turn-On Delay Time 19 nstr Rise Time 140

td(off) Turn-Off Delay Time 97

tf Fall Time 100

LD Internal Drain Inductance 5.0 nH Between lead,

6mm (0.25in.)LS Internal Source Inductance 13 from package

and center of die contactCiss Input Capacitance 7500 pF

Coss Output Capacitance 970

Crss Reverse Transfer Capacitance 510



Coss eff. Effective Output Capacitance 1020

Diode CharacteristicsParameter Min. Typ. Max. Units

IS Continuous Source Current 90

(Body Diode) AISM Pulsed Source Current 680

(Body Diode)

VSD Diode Forward Voltage 1.3 V

trr Reverse Recovery Time 41 61 nsQrr Reverse Recovery Charge 59 89 nC

ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

VDS = VGS, ID = 250A

VDS = 75V, VGS = 0V

VDS = 75V, VGS = 0V, TJ = 125C

Conditions

Conditions

VGS = 0V, ID = 250A

Reference to 25C, ID = 1mAVGS = 10V, ID = 90A f

TJ = 25C, IF = 90A, VDD = 38V

di/dt = 100A/s f

TJ = 25C, IS = 90A, VGS = 0V f

showing the

integral reverse

p-n junction diode.

VGS = 0V, VDS = 1.0V, = 1.0MHz

VGS = 10V f

MOSFET symbol

VGS = 0V

VDS = 25V

VGS = 0V, VDS = 60V, = 1.0MHz

Conditions

VGS = 0V, VDS = 0V to 60V

= 1.0MHz, See Fig. 5

RG = 2.5

ID = 90A

VDS = 25V, ID = 90A

VDD = 38VID = 90A

VGS = 20V

VGS = -20V

VDS = 60V

VGS = 10V f

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Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

Qualification Information

TO-247 MSL1

RoHS Compliant Yes

ESD

Machine Model Class M4 (425V)

AEC-Q101-002

Human Body Model Class H2 (4000V)

AEC-Q101-001

Charged Device

Model

Class C5 (1125V)

AEC-Q101-005

Moisture Sensitivity Level

Qualification Level

Automotive

(per AEC-Q101)

Comments: This part number(s) passed Automotive

qualification. IRs Industrial and Consumer qualification level

is granted by extension of the higher Automotive level.

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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics

Fig 3. Typical Transfer Characteristics Fig 4. Typical Forward Transconductance

vs. Drain Current

0.1 1 10 100

VDS, Drain-to-Source Voltage (V)

1

10

100

1000

10000

ID,Drain-to-SourceCurrent(A)

VGS

TOP 15V10V8.0V7.0V6.0V5.5V5.0V

BOTTOM 4.5V

60s PULSE WIDTH

Tj = 25C

4.5V

0.1 1 10 100


10

100

1000


4.5V

60s PULSE WIDTH

Tj = 175C

VGS

TOP 15V10V8.0V7.0V6.0V5.5V5.0V

BOTTOM 4.5V

2 4 6 8 10

VGS, Gate-to-Source Voltage (V)

0.1

1

10

100

1000

ID,Drain-to-SourceCurrent()

TJ = 25C

TJ = 175C

VDS = 25V

60s PULSE WIDTH

0 25 50 75 100 125 150

ID,Drain-to-Source Current (A)

0

50

100

150

200

Gfs,ForwardTransconductance(S) TJ = 25C

TJ = 175C

VDS = 10V

380s PULSE WIDTH

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Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge vs.Gate-to-Source Voltage

Fig 5. Typical Capacitance vs.Drain-to-Source Voltage

Fig 7. Typical Source-Drain DiodeForward Voltage

1 10 100


100

1000

10000

100000

C,Capacitance(pF)

VGS = 0V, f = 1 MHZ

Ciss = Cgs + Cgd, C ds SHORTED

Crss = CgdCoss = Cds + Cgd

Coss

Crss

Ciss

0 50 100 150 200

QG Total Gate Charge (nC)

0.0

2.0

4.0

6.0

8.0

10.0

12.0

VGS,Gate-to-SourceVoltage(V) VDS= 60V

VDS= 38V

VDS= 15V

ID= 90A

0.0 0.5 1.0 1.5 2.0 2.5

VSD, Source-to-Drain Voltage (V)

1

10

100

1000

ISD,ReverseDrainCurrent(A)

TJ = 25C

TJ = 175C

VGS = 0V

1 10 100 1000


0.1

1

10

100

1000

10000


1msec

10msec

OPERATION IN THIS AREALIMITED BY R DS(on)

100sec

Tc = 25CTj = 175C

Single Pulse

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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Fig 9. Maximum Drain Current vs.Case Temperature

Fig 10. Normalized On-Resistancevs. Temperature

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature (C)

0.5

1.0

1.5

2.0

2.5

RDS(on),Drain-to-SourceOnResistanc

e

(Normalized)

ID = 90AVGS = 10V

1E-006 1E-005 0.0001 0.001 0.01 0.1 1

t1 , Rectangular Pulse Duration (sec)

0.0001

0.001

0.01

0.1

1

ThermalResponse(Z

thJC

)

0.20

0.10

D = 0.50

0.02

0.01

0.05

SINGLE PULSE( THERMAL RESPONSE ) Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

Ri (C/W) i (sec)

0.1224 0.000360

0.1238 0.001463

0.2433 0.021388

J

J

1

1

2

2

3

3

R1

R1

R2

R2

R3

R3

C

Ci= i/Ri

25 50 75 100 125 150 175

TC , Case Temperature (C)

0

25

50

75

100

125

150

175

ID,

DrainCurrent(A)

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QG

QGS

QGD

VG

Charge

10 V

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

Fig 12c. Maximum Avalanche Energy

vs. Drain CurrentFig 12b. Unclamped Inductive Waveforms

Fig 12a. Unclamped Inductive Test Circuit

tp

V(BR)DSS

IAS

Fig 14. Threshold Voltage vs. Temperature

RG

IAS

0.01tp

D.U.T

LVDS

+

-VDD

DRIVER

A

15V

20VVGS

1K

VCCDUT

0

L

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (C)

0

500

1000

1500

2000

2500

EAS,SinglePulseAvalancheEnergy(m

J)

IDTOP 16A

25A

BOTTOM90A

-75 -50 -25 0 25 50 75 100 125 150 175 200

TJ , Temperature ( C )

1.0

1.5

2.0

2.5

3.0

3.5

4.0

VGS(th)GatethresholdVoltage(V)

ID = 250A

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Fig 15. Typical Avalanche Current Vs.Pulsewidth

Fig 16. Maximum Avalanche Energyvs. Temperature

Notes on Repetitive Avalanche Curves , Figures 15, 16:(For further info, see AN-1005 at www.irf.com)1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at atemperature far in excess of Tjmax. This is validated forevery part type.

2. Safe operation in Avalanche is allowed as long asTjmax isnot exceeded.

3. Equation below based on circuit and waveforms shown inFigures 12a, 12b.

4. PD (ave) = Average power dissipation per singleavalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts forvoltage increase during avalanche).

6. Iav = Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceedTjmax (assumed as 25C in Figure 15, 16).tav = Average time in avalanche.D = Duty cycle in avalanche = tav f

ZthJC(D, tav) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3BVIav) =DT/ ZthJC

Iav =2DT/ [1.3BVZth]

EAS (AR) = PD (ave)tav

1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01

tav (sec)

1

10

100

1000

AvalancheCurrent(A)

0.05

Duty Cycle = Single Pulse

0.10

Allowed avalanche Current vsavalanche pulsewidth, tav

assuming Tj = 25C due toavalanche losses0.01

25 50 75 100 125 150 175

Starting TJ , Junction Temperature (C)

0

100

200

300

400

500

600

EAR

,AvalancheEnergy(mJ)

TOP Single Pulse

BOTTOM 1% Duty Cycle

ID = 90A

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Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-ChannelHEXFETPower MOSFETs

Circuit Layout Considerations

Low Stray Inductance

Ground Plane

Low Leakage Inductance

Current Transformer

P.W.Period

di/dt

Diode Recoverydv/dt

Ripple 5%

Body Diode Forward Drop

Re-AppliedVoltage

ReverseRecoveryCurrent

Body Diode ForwardCurrent

VGS=10V

VDD

ISD

Driver Gate Drive

D.U.T. ISD Waveform

D.U.T. VDS Waveform

Inductor Curent

D =P.W.

Period

* VGS = 5V for Logic Level Devices

*

+

-

+

+

+-

-

-

RGVDD dv/dt controlled by RG

Driver same type as D.U.T.

ISDcontrolled by Duty Factor "D" D.U.T. - Device Under Test

D.U.T

VDS

90%

10%

VGS

td(on) tr td(off) tf

VDS

Pulse Width 1sDuty Factor 0.1 %

RD

VGS

RGD.U.T.

10V

+

-VDD

Fig 18a. Switching Time Test Circuit

Fig 18b. Switching Time Waveforms

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TO-247AC package is not recommended for Surface Mount Application.

TO-247AC Package OutlineDimensions are shown in millimeters (inches)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

AUFP2907Z

YWWA

XX or XX

Date Code

Y= Year

WW= Work Week

A= Automotive, LeadFree

Part Number

IR Logo

Lot Code

TO-247AC Part Marking Information

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Ordering InformationBase part Package Type Standard Pack Complete Part Number

Form QuantityAUIRFP2907Z TO-247 Tube 25 AUIRFP2907Z

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IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its

subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, andother changes to its products and services at any time and to discontinue any product or services without

notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specificrequirements with regards to product discontinuance and process change notification. All products are soldsubject to IRs terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale inaccordance with IRs standard warranty. Testing and other quality control techniques are used to the extent

IR deems necessary to support this warranty. Except where mandated by government requirements, testingof all parameters of each product is not necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsiblefor their products and applications using IR components. To minimize the risks with customer products andapplications, customers should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is withoutalteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-tion of this information with alterations is an unfair and deceptive business practice. IR is not responsibleor liable for such altered documentation. Information of third parties may be subject to additional restrictions.Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for

that product or service voids all express and any implied warranties for the associated IR product or serviceand is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgicalimplant into the body, or in other applications intended to support or sustain life, or in any other applicationin which the failure of the IR product could create a situation where personal injury or death may occur. Should

Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shallindemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributorsharmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of,

directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorizeduse, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

IR products are neither designed nor intended for use in military/aerospace applications or environmentsunless the IR products are specifically designated by IR as military-grade or enhanced plastic. Onlyproducts designated by IR as military-grade meet military specifications. Buyers acknowledge and agreethat any such use of IR products which IR has not designated as military-grade is solely at the Buyers risk,and that they are solely responsible for compliance with all legal and regulatory requirements in connectionwith such use.

IR products are neither designed nor intended for use in automotive applications or environments unlessthe specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a partnumber including the designation AU. Buyers acknowledge and agree that, if they use any non-designated

products in automotive applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IRs Technical Assistance Centerhttp://www.irf.com/technical-info/

WORLD HEADQUARTERS:233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

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