Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2007.

Introduction toCMOS VLSI

Design

Lecture 4: CMOS Transistor Theory

David Harris

Harvey Mudd College

Spring 2007

4: CMOS Transistor Theory Slide 2CMOS VLSI Design

Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance


Introduction So far, we have treated transistors as ideal switches An ON transistor passes a finite amount of current

– Depends on terminal voltages– Derive current-voltage (I-V) relationships

Transistor gate, source, drain all have capacitance– I = C (V/t) -> t = (C/I) V– Capacitance and current determine speed

Also explore what a “degraded level” really means


MOS Capacitor Gate and body form MOS capacitor Operating modes

– Accumulation– Depletion– Inversion

polysilicon gate

(a)

silicon dioxide insulator

p-type body+-

Vg < 0

(b)

+-

0 < Vg < Vt

depletion region

(c)

+-

Vg > Vt

depletion regioninversion region


Terminal Voltages Mode of operation depends on Vg, Vd, Vs

– Vgs = Vg – Vs

– Vgd = Vg – Vd

– Vds = Vd – Vs = Vgs - Vgd

Source and drain are symmetric diffusion terminals– By convention, source is terminal at lower voltage

– Hence Vds 0

nMOS body is grounded. First assume source is 0 too. Three regions of operation

– Cutoff– Linear– Saturation

Vg

Vs Vd

VgdVgs

Vds+-

+

-

+

-


nMOS Cutoff No channel Ids = 0

+-

Vgs = 0

n+ n+

+-

Vgd

p-type body

b

g

s d


nMOS Linear Channel forms Current flows from d to s

– e- from s to d Ids increases with Vds

Similar to linear resistor

+-

Vgs > Vt

n+ n+

+-

Vgd = Vgs

+-

Vgs > Vt

n+ n+

+-

Vgs > Vgd > Vt

Vds = 0

0 < Vds < Vgs-Vt

p-type body

p-type body

b

g

s d

b

g

s dIds


nMOS Saturation Channel pinches off Ids independent of Vds

We say current saturates Similar to current source

+-

Vgs > Vt

n+ n+

+-

Vgd < Vt

Vds > Vgs-Vt

p-type body

b

g

s d Ids


I-V Characteristics In Linear region, Ids depends on

– How much charge is in the channel?– How fast is the charge moving?


Channel Charge MOS structure looks like parallel plate capacitor

while operating in inversion– Gate – oxide – channel

Qchannel =

n+ n+

p-type body

+

Vgd

gate

+ +

source

-

Vgs

-drain

Vds

channel-

Vg

Vs Vd

Cg

n+ n+

p-type body

W

L

tox

SiO2 gate oxide(good insulator, ox = 3.9)

polysilicongate




Qchannel = CV

C =

n+ n+

p-type body

+

Vgd

gate

+ +

source

-

Vgs

-drain

Vds

channel-

Vg

Vs Vd

Cg

n+ n+

p-type body

W

L

tox


polysilicongate




Qchannel = CV

C = Cg = oxWL/tox = CoxWL

V =

n+ n+

p-type body

+

Vgd

gate

+ +

source

-

Vgs

-drain

Vds

channel-

Vg

Vs Vd

Cg

n+ n+

p-type body

W

L

tox


polysilicongate

Cox = ox / tox




Qchannel = CV

C = Cg = oxWL/tox = CoxWL

V = Vgc – Vt = (Vgs – Vds/2) – Vt

n+ n+

p-type body

+

Vgd

gate

+ +

source

-

Vgs

-drain

Vds

channel-

Vg

Vs Vd

Cg

n+ n+

p-type body

W

L

tox


polysilicongate

Cox = ox / tox


Carrier velocity Charge is carried by e- Carrier velocity v proportional to lateral E-field

between source and drain v =



between source and drain v = E called mobility E =



between source and drain v = E called mobility E = Vds/L

Time for carrier to cross channel:– t =



between source and drain v = E called mobility E = Vds/L

Time for carrier to cross channel:– t = L / v


nMOS Linear I-V Now we know

– How much charge Qchannel is in the channel

– How much time t each carrier takes to cross

dsI





channelds

QI

t





channel

ox 2

2

ds

dsgs t ds

dsgs t ds

QI

tW VC V V VL

VV V V

ox = W

CL


nMOS Saturation I-V If Vgd < Vt, channel pinches off near drain

– When Vds > Vdsat = Vgs – Vt

Now drain voltage no longer increases current

dsI





2dsat

ds gs t dsatVI V V V





2

2

2

dsatds gs t dsat

gs t

VI V V V

V V


nMOS I-V Summary

2

cutoff

linear

saturatio

0

2

2n

gs t

dsds gs t ds ds dsat

gs t ds dsat

V V

VI V V V V V

V V V V

Shockley 1st order transistor models


Example We will be using a 0.6 m process for your project

– From AMI Semiconductor

– tox = 100 Å

– = 350 cm2/V*s

– Vt = 0.7 V

Plot Ids vs. Vds

– Vgs = 0, 1, 2, 3, 4, 5

– Use W/L = 4/2

14

28

3.9 8.85 10350 120 /

100 10ox

W W WC A V

L L L

0 1 2 3 4 50

0.5

1

1.5

2

2.5

Vds

I ds (m

A)

Vgs = 5

Vgs = 4

Vgs = 3

Vgs = 2

Vgs = 1


pMOS I-V All dopings and voltages are inverted for pMOS

– Source is the more positive terminal Mobility p is determined by holes

– Typically 2-3x lower than that of electrons n

– 120 cm2/V•s in AMI 0.6 m process Thus pMOS must be wider to

provide same current– In this class, assume

n / p = 2-5 -4 -3 -2 -1 0

-0.8

-0.6

-0.4

-0.2

0

I ds(m

A)

Vgs = -5

Vgs = -4

Vgs = -3

Vgs = -2

Vgs = -1

Vds


Capacitance Any two conductors separated by an insulator have

capacitance Gate to channel capacitor is very important

– Creates channel charge necessary for operation Source and drain have capacitance to body

– Across reverse-biased diodes– Called diffusion capacitance because it is

associated with source/drain diffusion


Gate Capacitance Approximate channel as connected to source Cgs = oxWL/tox = CoxWL = CpermicronW

Cpermicron is typically about 2 fF/m

n+ n+

p-type body

W

L

tox


polysilicongate


Diffusion Capacitance Csb, Cdb

Undesirable, called parasitic capacitance Capacitance depends on area and perimeter

– Use small diffusion nodes

– Comparable to Cg

for contacted diff

– ½ Cg for uncontacted

– Varies with process

Introduction to CMOS VLSI Design Lecture 4: CMOS Transistor Theory David Harris Harvey Mudd College Spring 2007.

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