White Paper Intel® Flash Memory Intel® NAND Flash Memory for Intel® Turbo Memory
Jun 25, 2015
White PaperIntel® Flash Memory Intel® NAND
Flash Memory for Intel® Turbo Memory
Intel® NAND Flash Memory for Intel® Turbo Memory White Paper
Introduction
OverviewIntel has introduced a new non-volatile memory (NVM) layer into thememory hierarchy in the mobile computing platform. This new NVMlayer and technology is a hard disk drive cache. This new non-volatilehard disk drive cache memory layer was developed in a mini PCI-expressmemory card form factor that can be inserted in the back of a laptopmuch like Intel’s Wireless LAN (WLAN) solution for Intel® Centrino®mobile technology. The new non-volatile memory layer is now a prod-uct called Intel® Turbo Memory. It consists of an Intel Turbo Memorycontroller ASIC (Application Specific Integrated Circuit) chip and twoIntel NAND flash non-volatile memory components that enable fasterresume to productivity after hibernate, providing additional power savings by limiting hard disk drive accesses and increasing application responsiveness for a richer user experience.
The Intel Turbo Memory card on the new mobile computing platformsoperating on Windows Vista* OS support both Microsoft's ReadyDrive*and ReadyBoost* features in one single unit.
The capabilities and features of the Intel Turbo Memory card areaccomplished by utilizing a fast PCI express bus to efficiently movedata between the Intel Turbo Memory card and the CPU data requestsrather through the slower higher power hard disk drive path.
The application performance acceleration is attributed to getting datavia a faster 250MB/s PCI express bus to and from a higher perform-ance silicon NAND flash memory media rather than a slower rotatingmagnetic hard disk drive. The Intel® Matrix Storage Manager (IMSM)software in conjunction with the Intel Turbo Memory firmware driversjudiciously control the reads and the writes to the hard disk drive limit-ing the hard disk drive power consumption and extending the wear andthe life of the hard drive.
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Figure 2: Intel® Turbo Memory Block Diagram
HDD
Intel®Turbo
MemoryController
Intel® TurboMemory Card
NewMemory
Hierarchy
NVM CacheBIOS
BIOS
ICH
MCH
CPU
DRAM
Disk
Control Signals
x16 Data Bus x8
x8
MainMemory
PCI-e PCI-eIntel®NANDFlash
Memory
Intel®Turbo Memory
Controller
Intel®NAND Flash
Memory
Intel®NAND Flash
Memory
HDD
Intel®Turbo
MemoryController
Intel® TurboMemory Card
NewMemory
Hierarchy
NVM CacheBIOS
BIOS
ICH
MCH
CPU
DRAM
Disk
Control Signals
x16 Data Bus x8
x8
MainMemory
PCI-e PCI-eIntel®NANDFlash
Memory
Intel®Turbo Memory
Controller
Intel®NAND Flash
Memory
Intel®NAND Flash
Memory
Figure 1: New Non-Volatile Memory Layer in the PC Computing Platform
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Intel® NAND Flash Memory for Intel® Turbo Memory White Paper
The Four Key Tenantsof the Intel® TurboMemory CardThe four key tenants of the Intel® Turbo Memory card are:
• A complete understanding of the PC system memory and the
HDD (Hard Disk Drive) usage model
• Platform and memory component reliability requirements
• Platform memory performance needs
• Thorough hardware and software validation of the complete
platform solution
All four of these key tenants will be discussed in detail in this paper.
Intel has extended its PC system (DRAM) memory and platform HDD
expertise in developing the Intel Turbo Memory card. The introduc-
tion of this new non-volatile memory disk caching layer into the
overall PC memory platform hierarchy is revolutionary in principle and
the application of NAND flash memory. None of these four tenants
can be compromised to deliver and ensure a solid solution such as
the Intels Turbo Memory card.
PC Platform Memory Usage Model
Understanding the complete PC platform memory usage model and
hierarchy from the deepest levels of the CPU registries and caches
to the remotest level of hard disk drive storage is essential in know-
ing how to improve the overall platform performance, knowing what
the right solution is, as well as the right implementation of the solu-
tion. The Intel Turbo Memory card uses the NAND flash dramatically
different than the traditional use of NAND flash memory, i.e., in
memory cards and USB drives.
The traditional use for NAND flash devices in USB drives and in
other memory card form factors has been primarily for storage of
large files such as digital pictures, music, or a large document. The
usage of these devices has been for occasional writes and reads, as
for example, in a digital camera, where these captured and stored
data files (images) are transferred via a memory card to a personal
computer for image processing, email distribution, printing, or
storage. This typical usage model of NAND flash in the consumer
memory card environment is dramatically different from the PC
computing environment where the Intel Turbo Memory card is used.
The difference between the two memory card usage models and
devices are listed in the following table:
Figure 3: The 4 Key Tenants of the Intel® Turbo Memory Card
Figure 4: Consumer Data Storage Usage Model
White Paper Intel® NAND Flash Memory for Robson Technology
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These NAND usage model differences between the consumer mem-
ory card data storage and PC computing requires extensive research
in workload scenario analysis. The development of key wear leveling
algorithms is essential to enable the NAND flash and the platform to
work reliably over the product life. Once these NAND flash caching
usage models and work loads were done, close relationships with
the Microsoft Vista* OS and Intel software/firmware developers
were needed to optimize the Intel Turbo Memory controller and wear
leveling algorithm of the NAND flash Memory to further the Intel
Turbo Memory card product performance.
Reliability
The PC computing platform, the NAND flash usage model, and the
application workloads define and determine the platform design and
operational bounds of the Intel Turbo Memory card. The major relia-
bility elements essential to the success of the memory card are:
• Intel® Turbo Memory controller to manage the NAND flash
• NAND flash wear leveling algorithm and firmware
• Intel® NAND flash memory component reliability
All three reliability elements listed above must be extensively tested
individually and on the platform to ensure it meets the product life
requirements.
Intel® Turbo Memory Controller Manages the
Intel® NAND Flash
The Intel Turbo Memory controller manages the NAND flash and the
PCI Express bus while handling the Operating System (OS) service
calls for cached data reads and writes. As with any NAND based
memory product solution, the NAND flash memory controller is the
key in executing the NAND flash wear leveling algorithm, managing
the reads, writes, erases, and performing the ECC (Error Correction
Code) as needed.
The Intel Turbo Memory controller has a dual responsibility to man-
age the NAND usage and keeping extensive “book keeping” of the
NAND reliability statistics. These usage statistics includes the num-
ber of page reads, page writes, block erases, and the reliability statis-
tics include initial and subsequent development of bad blocks over
time, block retirement, and bit error rates. All these vital statistics are
used to manage the NAND flash over the life of the Intel Turbo
Memory card.
Model Attribute
Applications
File Size
Performance
Reliability
PC Computing
• Random small file writes
• References small amounts
of data
• 50% are 8 Sectors (4KB)
• Avg. Size: 44 Sectors (~20KB)
• Fast small random reads
• Fast small random writes
• Extensive reads and writes
• Intensive daily and hourly
computational usage
Consumer Data Storage
• Sequential large file writes
• Large Files > 1MB
• Fast large file writes
• Frequent writes
• Seldom read
• Occasional use
Intel® Turbo Memory Card Usage Model Comparison
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Intel® NAND Flash Memory for Intel® Turbo Memory White Paper
Intel Developed Flash Wear Leveling Algorithm and
Firmware IP
Extensive studies have been done on various usage models for the
light, moderate, and heavy mobile PC users and their corresponding
user application workloads to determine the optimal wear leveling
algorithm. These studies were essential in establishing and fitting
the new Intel® Turbo Memory layer into the PC platform hierarchy
and correspondingly outlining the reliability requirements of the
Intel®NAND Flash Memory. While many NAND flash suppliers specify
the same reliability specifications such as their 100K program erase
specifications and their data retention capabilities, each supplier sat-
isfies the requirements differently. In that regard, the Intel Turbo
Memory controller and wear leveling algorithm was specifically
fine-tuned to Intels NAND Flash Memory.
With NAND flash moving into this new rigorous and demanding com-
puting environment, the Intel Turbo Memory controller must execute
the NAND flash wear leveling algorithm to ensure a healthy and
robust product life for the Intel Turbo Memory Card. The wear level-
ing algorithm must comprehend not only the usage statistics of the
NAND flash but also track the key reliability statistics. The wear lev-
eling algorithm must track the many known failure mechanisms
known to all NAND flash in the industry that include the following:
• Program Disturb
• Read Disturb
• Program and Erase Cycles
• Data Retention
• Bit Error Rate (BER)
• Block Wear and Retirement over Usage and Time
Ground breaking NAND wear leveling algorithms were developed
and tested to ensure the NAND flash reliability to the various usage
models. Attributes of the wear leveling algorithm had to compre-
hend the demanding data caching performance and data through-
put requirements while managing the following:
• Maintaining low power consumption
• Managing memory space for incoming large and small files
• Determining and managing Intel Turbo Memory card foreground
and background operations
• Even wear of the NAND flash memory blocks
• Intel Turbo Memory card separation issues with the platform and
hard disk drive
The above graph illustrates the wear leveling algorithm results high-
lighting the evenness and efficiency of memory block usage with
the flat curve of a sample work load study. The graph shows a
2.5% difference in block erase count between the mean and peak
usage activity.
Figure 5: Demonstrated NAND Memory Wear Leveling Effectiveness
Intel® NAND Flash Memory for Intel® Turbo Memory White Paper
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In the end, the Intel® Turbo Memory wear leveling algorithm
and firmware for the memory card maximizes Intel's NAND flash
performance and capability.
Intel® NAND Flash Memory
Intel's SLC (Single Level Cell) NAND flash memory is one of the key
ingredients to the development of the Intel Turbo Memory card. All
of its intricate performance to read, write, erase, and respective
reliability capabilities have been woven in the development of the
NAND wear leveling algorithm and the Intel Turbo Memory controller.
The Intel® NAND Flash Memory reliability in respect to, Program and
Read Disturb, Partial Page Writes, Program and erase cycling, Bit Error
Rate (BER) and ECC, Block “0” reliability capabilities, Bad Block
Management, Data retention have been evaluated and built into
Intel's NAND flash wear leveling algorithms and ECC schemes to
provide the highest quality and integrity of data to the computing
environment.
Contrary to industry NAND flash, Intel’s NAND flash memory
provides an additional advanced command set that offers more
capability and performance. These advanced commands include
the following:
• Random Data Read Within a Page Buffer
• Write and Read Cache Mode
• OTP (One Time Programmable)
• Two Plane Commands (Read, Program, and Erase Operation,
and Interleave Die Operation)
Intel® Turbo Memory Card Performance
The Intel Turbo Memory card provides the user with more perform-
ance with their mobile laptop PC by supplying data faster to the CPU
in all modes of operation, active, resumes to productivity from hiber-
nate, and booting all resulting in a better and more satisfying user
experience. This improved performance is attributed to the memory
card architecture and operating on a faster 250 MB/s PCI Express
bus rather than on a slower higher power USB or other system bus.
The memory card architecture was designed to deliver better per-
formance by taking advantage of the power of parallelism that uti-
lizes 2 Intel® NAND Flash Memory components that are addressed,
written, and read in an interleaved x16 parallel data path with the
Intel Turbo Memory controller.
The Intel Turbo Memory card design has been optimized for perform-
ance to Intel's SLC (Single Level Cell) NAND flash bus command set,
setup and hold edge timings, and I/O edge timings to squeeze out
any wasted bus time. Combined with a high performance Intel Turbo
Memory controller and Intel NAND flash component performance,
the Intel Turbo Memory card can deliver visible improvements in user
applications experience, resumes to productivity from hibernates,
and additional battery power savings.
HDD
Intel®Turbo
MemoryController
Intel® TurboMemory Card
NewMemory
Hierarchy
NVM CacheBIOS
BIOS
ICH
MCH
CPU
DRAM
Disk
Control Signals
x16 Data Bus x8
x8
MainMemory
PCI-e PCI-eIntel®NANDFlash
Memory
Intel®Turbo Memory
Controller
Intel®NAND Flash
Memory
Intel®NAND Flash
Memory
Figure 6: Intel® NAND Flash Memory
Figure 7: Intel® Turbo Memory Card Block Diagram
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Intel® NAND Flash Memory for Intel® Turbo Memory White Paper
Platform Validation of Memory Hardware and Software
The last key tenant and the last task in completing the Intel® Turbo
Memory card design and development is a complete product
validation between the hardware and the software. Extensive
validation at the hardware and software level is needed to ensure
a robust product.
Hardware Validation
Component read, write, and erase operation timing between the
Intel Turbo Memory controller to Intel NAND flash was extensively
evaluated and validated. Extensive measurements and characteriza-
tion data gathering was completed to ensure all the NAND flash
command set, I/O timings, and read, write, and erase datasheet
specifications were met.
Platform Validation
The Intel Turbo Memory card received approval from the PCI-e stan-
dards body by meeting standards certifications and achieving stan-
dards compliance with its high speed PCI Express interface. Data
integrity and I/O performance tests were tested to meet PCI specifi-
cations. Participation in the PCI-Express “plug feast” test were also
completed to ensure compatibility across platforms.
Software and Firmware Validation
Validation testing of Intel's NAND Flash Memory wear leveling algo-
rithm and Intel Turbo Memory software drivers with Microsoft's
Vista* OS release was thoroughly conducted to ensure system
robustness. Integrating the Intel Turbo Memory card to the platform
at the software level required close examination and coordination of
the Vista* OS, graphics chipset (GMCH) and IO chipset (ICH) firmware,
platform BIOS, and Intel's matrix storage manager software.
To validate Intel's NAND Flash Memory wear leveling algorithm, a
specific Intel® NAND Flash Memory RDT (Reliability Demonstration
Test) was designed and tested with PC mobile laptops reading, pro-
gramming, and erasing the NAND flash with work loads running
24x7 at accelerated temperatures. During the course of the RDT, the
NAND flash reliability statistics were monitored to resolve, demon-
strate and prove a 2.5 million hour MTBF product life capability.
High Volume Manufacturing (HVM) Product Qualification
Intel's Turbo Memory card has gone through an internal HVM memo-
ry card validation. Moreover, each of the respective silicon compo-
nents, Intel Turbo Memory controller and Intel NAND Flash Memory
also were subjected to qualification. Finally, the Intel Turbo Memory
card also went through a rigorous high volume manufacturing (HVM)
product qualification that includes the following:
• Card (board) Manufacturing: Solder Joint Reliability, Temperature
cycling, Power cycling, Flex, Shock & Vibration, Operational
Shock & Vibration
• Board Level Evaluations for ESD and EMI
(Electro-Magnetic Interference)
• Quality and Environmental Standards Tested to Meet: ROHS, UL,
and PCI Express
In the end, a qualified Intel Turbo Memory card resulted after
an extensive product qualification processes. This ensured a solid
product to meet the platform usage model of five years.
SummaryExtensive research into the mobile PC platform memory hierarchy,
usage model, and work load was done to develop the Intel Turbo
Memory card. The four key tenants responsible in producing the
Intel Turbo Memory card are:
1. Memory usage model and work load analysis
2. Reliable wear leveling algorithm to ensure product life
3. Intel Turbo Memory card performance
4. Complete platform software and hardware validation
Figure 8: Intel® Turbo Memory Card
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