Instructor: Prof. Dr. Ir. Djoko Hartanto, M.Sc. : Arief Udhiarto, M.T Source: Source: U.C. Berkeley ELECTRONICS DEVICE.

InstructorInstructor : Prof. Dr. Ir. Djoko Hartanto, M.Sc.: Prof. Dr. Ir. Djoko Hartanto, M.Sc.: Arief Udhiarto, M.T: Arief Udhiarto, M.T

SourceSource :: U.C. Berkeley

ELECTRONICS DEVICE

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ScheduleSchedule

Lectures: K.301 Mon. 15:00-15.50 Lectures: K.301 Mon. 15:00-15.50 AMAM

K.301 Wed. 13.00-14.50 K.301 Wed. 13.00-14.50 AM AM

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Relation to Other CoursesRelation to Other Courses

Prerequisite:Prerequisite: Simple pn-junction, BJT and MOSFET Simple pn-junction, BJT and MOSFET

theory; BJT and MOSFET circuit theory; BJT and MOSFET circuit applications.applications.

Familiarity with the Bohr atomic modelFamiliarity with the Bohr atomic model

Relation to other courses:Relation to other courses: Electronics CircuitElectronics Circuit

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Reading MaterialReading Material

Primary TextPrimary Text ::Semiconductor Device Fundamentals Semiconductor Device Fundamentals : R. F. : R. F.

Pierret (Addison Wesley, 1996)Pierret (Addison Wesley, 1996)

ReferencesReferences Text: Text: Solid State Electronic Devices 4Solid State Electronic Devices 4thth Edition Edition: B. : B.

G. Stretman, S. Banerjee (Prentice Hall, G. Stretman, S. Banerjee (Prentice Hall, 2000) 2000)

Device Electronics for Integrated CircuitsDevice Electronics for Integrated Circuits 3 3rdrd Edition: R. Muller, T. Kamins (Wiley & Sons, Edition: R. Muller, T. Kamins (Wiley & Sons, 2003)2003)

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SAPSAP

1. Course 1. Course : : Electronics DeviceElectronics Device

2. Course Code2. Course Code : : EES 210804EES 210804 SKS: 4 SKS: 4 Semester: 3Semester: 33. Instructor 3. Instructor : : Prof. Dr. Ir. Djoko Hartanto M.Sc. Prof. Dr. Ir. Djoko Hartanto M.Sc. (DH)(DH)

Arief Udhiarto, M.T (AU)Arief Udhiarto, M.T (AU)

4. Class System4. Class System : : SingleSingle 5. Course’s Objective5. Course’s Objective : mastering in basic concept of : mastering in basic concept of integrated-integrated- circuit operation devices circuit operation devices specially in silicon-specially in silicon- integrated circuits integrated circuits

6. Grading System (%) : 6. Grading System (%) : Homework (10) Homework (10) , , MT (35) , MT (35) , Seminar (15) , FT (40) Seminar (15) , FT (40)

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MiscellanyMiscellany

Academic (dis)honesty Departmental policy will be strictly

followed Collaboration (not cheating!) is encouraged

Classroom etiquette: Arrive in class on time! Turn off cell phones, pagers, MP3/MP4

players, etc. No distracting conversations Ask question as much as possible

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Pre TestPre Test

1.1. What do you know about atom, What do you know about atom, electron, and hole?electron, and hole?

2.2. What are the differences between What are the differences between conductor and semiconductor?conductor and semiconductor?

3.3. What is majority carrier related to What is majority carrier related to semiconductor!semiconductor!

10 Minutes only

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Course OutlineCourse Outline

Semiconductor Fundamentals;Metal-Semiconductor Contact

PN-Junction Diode

Bipolar Junction TransistorMOSFETIC Processing

(other subject)

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Overview of IC Devices and Semiconductor Fundamentals

Reading Assignment : Pierret Chap 1, Chap 2

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An IC consists of interconnected electronic An IC consists of interconnected electronic components in a single piece ( chip ) of components in a single piece ( chip ) of semiconductor materialsemiconductor material

In 1958, Jack S. Kilby (Texas In 1958, Jack S. Kilby (Texas Instruments) showed that it was Instruments) showed that it was possible to fabricate a simple IC in possible to fabricate a simple IC in germanium.germanium.

In 1959, Robert Noyce (Fairchild In 1959, Robert Noyce (Fairchild Semiconductor) demonstrated an IC Semiconductor) demonstrated an IC made in silicon using SiO2 as the made in silicon using SiO2 as the insulator and Al for the metallic insulator and Al for the metallic interconnectsinterconnects.

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Evolution of Bipolar Junction Transistors

Point Contact BJT 1947

SiGe BJT2000 Si Nanowire BJT

2003

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From a Few, to Billions

By connecting a large number of components, By connecting a large number of components, each performing simple operations, an IC that each performing simple operations, an IC that performs very complex tasks can be built.performs very complex tasks can be built.

The degree of integration has increased at an The degree of integration has increased at an exponential pace over the past ~40 years.exponential pace over the past ~40 years. The number of devices on a chip doubles every ~18 The number of devices on a chip doubles every ~18

months, for the same price.months, for the same price.

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IC Technology Advancement

Improvements in IC performance and cost have been enabled by the steady miniaturization of the transistor

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Advantages of Technology Scaling

• More dies per wafer, lower cost• Higher-speed devices and circuits

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Today and TomorrowToday and Tomorrow

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The Nanometer Size Scale

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State-of-the-art Transistor Size

1µm = 10-6m = 10-4 cm = 1000 nm 1 nm =10 Å

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CZ Crystal GrowthCZ Crystal Growth

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Si Bulk Wafer Specifications Bulk Si Bulk Wafer Specifications Bulk Wafer SpecificationsWafer Specifications

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Purity of Device Grade Si

99.999999999 % (so-called “eleven nines” ) Maximum impurity allowed is equivalent to 1 mg

of sugar dissolved in an Olympic-size swimming pool.

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Flatness deviation and particle sizes

Dimensions are equivalent to 1/1000 of a baseballplaced inside a sports dome.

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Crystallographic Planes

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Miller IndicesCrystallographic Notation

h: inverse x-interceptk: inverse y-interceptl: inverse z-intercept

(Intercept values are in multiples of the lattice constant;h, k and l are reduced to 3 integers having the same ratio.)

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Crystallographic PlanesCrystallographic Planes and Si and Si WafersWafers

Silicon wafers are usually cut along the (100) plane with a flat or notch to orient the wafer during IC fabrication

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Bulk Si Wafer to IC Chip

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Bohr ModelBohr Model

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Silicon AtomSilicon Atom 1s, 2s, 2p orbitals filled by 10 electrons 3s, 3p orbitals filled by 4 electrons 4 nearest neighbors

unit cell length = 5.43Å5 × 1022 atoms/cm3

“diamond cubic ” structure

The Si Atom The Si Crystal

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Conduction Band and Valence Band

ElectronPotentialEnergy

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The Simplified Energy Band The Simplified Energy Band DiagramDiagram

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Semiconductors, Insulators, and Semiconductors, Insulators, and ConductorsConductors

• Totally filled band and totally empty bands do not allow current flow. (just as there is no motion of liquid in a totally filled or totally empty bottle

• Metal conduction band is half-filled• Semiconductors have lower Eg’s than insulators and

can be doped

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Compound SemiconductorsCompound Semiconductors

•“Zincblende Structure”

•III-V compound semiconductors : GaAs, GaP, GaN, etc.

“important for optoelectronics and high speed ICs”

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Density of StatesDensity of States

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Density of States at Conduction Density of States at Conduction Band:Band:The Greek Theater AnalogyThe Greek Theater Analogy

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Concept of a “hole”Concept of a “hole”

An unoccupied electronic state inthe valence band is called a “hole”

Treat as positively charge mobile particle in the semiconductors

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Bond Model of Electrons and HoleBond Model of Electrons and Holess

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Electrons and HolesElectrons and Holes