GCS Confidential InP HBT Technology • GCS offers high-performance InP HBT technology for foundry service • Four qualified processes are available for different applications • Design kits and layout support are available • Superior ICs have been demonstrated by customers and several have been in production since 2007
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GCS Confidential
InP HBT Technology
• GCS offers high-performance InP HBT technology for foundry service
• Four qualified processes are available for different applications
• Design kits and layout support are available
• Superior ICs have been demonstrated by customers and several have been in production since 2007
OC-1
92
0.1 1 10 100 Data Rate (Gbps)
Si CMOS
SiGe HBT
GaAs HBT
GaAs HEMT
InP HBT
InP HEMT/MHEMT
OC-1
2
OC-4
8
OC-7
68
0
10
20
30
40
50
60
70
0 50 100 150 200 250
Si(Ge) BJT
GaAs pHEMT
GaAs HBT
InP SHBT
InP HEMT
InP DHBT
Bre
ak
do
wn
Vo
lta
ge
( V
)
Peak fT ( GHz )
Si(Ge) BJT
GaAs HBT
InP DHBT
InP HEMT
Intrinsic material characteristics (hetero-junctions, high mobility, insulating substrate) and ease of integration (scalable) have made InP HBT the natural technology of choice for high performance circuits
Advantages of InP HBT
GCS Confidential
3
Comparison of High Speed Technologies
100
150
200
250
300
350
0 1 2 3 4 5 6 7 8
BVceo (V)
f T (
GH
z)
InP DHBTs
FOM: 1100 GHz-V
InP SHBTs
FOM: 690 GHz-V
SiGe HBT
FOM: 555 GHz-V
DHBT1
DHBT3
DHBT2
GCS Confidential
GCS InP HBT Parameters (Typical)
HBT Parameters SHBT DHBT1 DHBT2 DHBT3
Emitter Size 1umx3um 1umx3um 0.8umx3um
0.8umx3um
Typical operating current density Jc(typ) 1mA/m2 1 mA/m2 2 mA/m2 2 mA/m2
Maximum operating current density Jc(max)
2 mA/m2 2 mA/m2 3 mA/m2 3 mA/m2
Typical operating voltage Vce 1 V 1.5V 1.5 V 1 V
Base-collector breakdown voltage BVcbo 4 V 8 V 5.5 V 4.5 V
Collector-emitter breakdown voltage BVceo 3.5 V 7 V 4.5 V 3.8 V
Emitter-base breakdown voltage BVebo 2 V 2 V 2 V 2 V