INN650D02 Final Datasheet Rev. 1.0 2020/03/10 INN650D02 650V GaN Enhancement-mode Power Transistor Features • Enhancement mode transistor-Normally off power switch • Ultra high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC Standards • ESD safeguard Benefits • High efficiency power switching • High power density • Enables higher switching frequency • System cost savings Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High density power conversion • High efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 °C Parameter Value Unit VDS,max 650 V RDS(on),max 200 mΩ QG,typ 1.0 nC IDS,Pulse 20 A QOSS @ 400V 18 nC Qrr 0 nC Table 2 Ordering Information Type/Ordering Code Package Marking INN650D02 DFN 8X8 INN650D02 Gate 8 Drain 1,2,3,4 Kelvin Source 7 Source 5,6 D D D D S S SK G D D D D 8 1 POWER THE FUTURE www.szjuquan.com
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INN650D02 D INN650D02 D - szjuquan.como(er) - 29 - pF V GS = 0 V; V DS = 0 to 400 V Effective output capacitance, time related2 C o(tr) - 44 - pF V GS = 0 V; V DS = 0 to 400 V Output
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INN650D02
Final Datasheet Rev. 1.0
2020/03/10
INN650D02
650V GaN Enhancement-mode Power Transistor
Features
• Enhancement mode transistor-Normally off power switch
• Ultra high switching frequency
• No reverse-recovery charge
• Low gate charge, low output charge
• Qualified for industrial applications according to JEDEC Standards
• ESD safeguard
Benefits
• High efficiency power switching
• High power density
• Enables higher switching frequency
• System cost savings
Applications
• AC-DC converters
• DC-DC converters
• Totem pole PFC
• Fast battery charging
• High density power conversion
• High efficiency power conversion
Table 1 Key Performance Parameters at Tj = 25 °C
Parameter Value Unit
VDS,max 650 V
RDS(on),max 200 mΩ
QG,typ 1.0 nC
IDS,Pulse 20 A
QOSS @ 400V 18 nC
Qrr 0 nC
Table 2 Ordering Information
Type/Ordering Code Package Marking
INN650D02 DFN 8X8 INN650D02
Gate 8
Drain 1,2,3,4
Kelvin Source 7
Source 5,6
D
DD
D
SS
SKG
D
DD
D
8
1
POWER THE FUTURE
www.szjuquan.com
Page 2
Final Datasheet Rev. 1.0 2020/03/10
INN650D02 650V GaN Enhancement-mode Power Transistor
Table of contents ..................................................................................................................................................... 2
1 Maximum ratings ............................................................................................................................................ 3
6 Reel information ........................................................................................................................................... 14
7 Revision history ........................................................................................................................................... 15
POWER THE FUTURE
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Page 3
Final Datasheet Rev. 1.0 2020/03/10
INN650D02 650V GaN Enhancement-mode Power Transistor
Zv
1 Maximum ratings
at Tj = 25 °C unless otherwise specified.
Continuous application of maximum ratings can deteriorate transistor lifetime. For further information, contact
Innoscience sales office.
Table 3 Maximum ratings
Parameter Symbol Values
Unit Note/Test Condition Min. Typ. Max.
Drain source voltage VDS,max - - 650 V VGS = 0 V, ID = 100 μA
Drain source voltage transient 1 VDS(transient) - - 750 V VGS = 0 V, VDS = 750 V
Continuous current, drain source ID - - 11 A Tc = 25 °C