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Infrared Detectors-Materials,Processing, and Devices

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Cambridge University Press978-1-107-40952-1 - Materials Research Society Symposium Proceedings: Volume 299:Infrared Detectors–Materials, Processing, and DevicesEditors: L. Ralph Dawson and Ami AppelbaumFrontmatterMore information

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MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS VOLUME 299

Infrared Detectors-Materials,Processing, and Devices

Symposium held April 14-16, 1993, San Francisco, California, U.S.A.

EDITORS:

L. Ralph DawsonSandia National Laboratories

Albuquerque, New Mexico, U.S.A.

Ami AppelbaumSemi-Conductor Devices

Haifa, Israel

IMIRISIMATERIALS RESEARCH SOCIETY

Pittsburgh, Pennsylvania




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Contents

PREFACE ix

MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS x

PART I: INFRARED DETECTORS BASED ONIII-V MATERIALS

PHOTOCONDUCTIVE (PC) AND PHOTOVOLTAIC (PV) DUAL-MODEOPERATION III-V QUANTUM WELL INFRARED PHOTODETECTORSFOR 2-14 /zm IR DETECTION 3

Sheng S. Li, Y.H. Wang, M.Y. Chuang, and P. Ho

MODELING OF MBE GROWTH WITH INTERACTING FLUXES 9David H. Tomich, K.G. Eyink, T.W. Haas, M.A. Capano, R. Kaspi,and W.T. Cooley

DIFFERENTIALLY STRAINED P-DOPED QUANTUM WELL INFRAREDPHOTODETECTOR 15

R.T. Kuroda and E. Garmire

InAs/InxGa,xSb TYPE II STRAINED LAYER SUPERLATTICESFOR LONG WAVELENGTH INFRARED DETECTION APPLICATIONS 21

D.N. Talwar, John P. Loehr, and B. Jogai

UNDOPED LEC GaAs AS AN INFRARED BOLOMETER DETECTOR 27S. Estill and M.R. Brozel

PART II: INFRARED MATERIALS CHARACTERIZATION

A LONG-WAVELENGTH INFRARED PHOTOLUMINESCENCESPECTROMETER FOR THE CHARACTERIZATION OF SEMICONDUCTORMATERIALS 35

R.P. Wright, S.E. Kohn, and N.M. Haegel

LOW TEMPERATURE PL CHARACTERIZATION OF LPEEGROWN GaSb AND GalnAsSb EPILAYERS 41

S. Iyer, S. Hegde, K.K. Bajaj, Ali Abul-Fadl, and W. Mitchel

A SHUBNIKOV-DE HAAS STUDY OF TILTED MAGNETIC FIELD IN THEHgTe/CdTe SUPERLATTICE 47

Ikai Lo, W.C. Mitchel, D. Boeringer, K.A. Harris, R.W. Yanka,L.M. Mohnkern, A.R. Reisinger, and T.H. Myers

INTERSUBBAND TRANSITIONS IN IITQ 07Ga0 93As/Al0 4Ga0 6AsMULTIPLE QUANTUM WELLS 53

F. Szmulowicz, M.O. Manasreh, C. Kutsche, and C.E. Stutz

PHOTOLUMINESCENCE AND PHOTOMODULATION SPECTROSCOPY OFCdTe/Cd!_xMnxTe:In MULTIPLE QUANTUM WELLS 59

S. Jiang, L.J. Zhang, J.M. Zhang, and S.C. Shen

THE PHOTOEMISSION FROM SUPERLATTICES OF III-V SEMICONDUCTORSWITH GRADED INTERFACES UNDER QUANTIZING MAGNETIC FIELD 65

Kamakhya P. Ghatak and Badal De




BULK HOMOGENEITY OF IRON DOPED InP 71J. Jimenez, M.A. Vella, M.A. Gonzalez, P. Martin, L.F. Sanz,and M. Chafai

THE BURSTEIN-MOSS SHIFT IN QUANTUM CONFINED INFRAREDMATERIALS 77

Kamakhya P. Ghatak and Badal De

PART III: HgCdTe MATERIALS AND DEVICES

*EXTENDING HgCdTe PHOTOVOLTAIC DETECTOR TECHNOLOGY TOCUTOFF WAVELENGTHS OF 17 pm 85

E.E. Krueger, G.N. Pultz, K.R. Maschhoff, S.P. Tobin, P.W. Norton,J.H. Rutter, and M.B. Reine

*MOVPE GROWTH OF MCT FOR LWIR DETECTORS 99S.J.C. Irvine, J. Bajaj, and L.O. Bubulac

LOW RESISTANCE OHMIC CONTACTS TO n-Hg,_xCd Te USING AHgTe CAP LAYER 109

Patrick W. Leech and Geoffrey K. Reeves

*HgCdTe SURFACE CLEANUP AND ETCH USING A REMOTEHYDROGEN PLASMA 115

Patricia B. Smith

THERMAL DIFFUSIVITY MEASUREMENT OF PURE Te,(Hg l_xCdx) l TTe AND (Hgl_xZnx)l Te 127

Hossein Maleki and Lawrence R. Holland

THE GROWTH OF HIGH-QUALITY MCT FILMS BY MBE USINGIN SITU ELLIPSOMETRY 135

K.K. Svitashev, S.A. Dvoretsky, V.A. Shvets, A.S. Mardezhov,Yu.G. Sidorov, I.E. Nis, V.S. Varavin, V. Liberman, and V.G. Remesnik

PART IV: II-VI DETECTOR TECHNOLOGY

*IMPROVED QUALITY OF BULK II-VI SUBSTRATES FOR HgCdTe ANDHgZnTe EPITAXY 143

Sanghamitra Sen and John E. Stannard

EXCESS CARRIER LIFETIMES IN (HgCd)Te GROWN BY MOCVDINTERDIFFUSED MULTILAYER PROCESS 155

P. Mitra, T.R. Schimert, Y.L. Tyan, A.J. Brouns, and F.C. Case

MAPPING OF DEFECTS IN METAL-SEMICONDUCTOR-METAL (MSM)DETECTORS IN Hg, Cd Te BY NUCLEAR MICROPROBE 163

Patrick W. Leech, Sean P. Dooley, and David N. Jamieson

TWINNING EFFECTS IN Hg, xCdxTe (x~0.2) GROWN BY THM IN THE DIRECTION 169

Eliezer Weiss, Ehud Kedar, and Nili Mainzer

*HgCdTe MBE TECHNOLOGY: A FOCUS ON CHEMICAL DOPING 175Owen K. Wu

QUALITY OF BULK CdTe SUBSTRATES AND ITS RELATION TOINTRINSIC DEFECTS 185

B.K. Meyer, D.M. Hofmann, W. Stadler, P. Emanuelsson, P. Omling,E. Weigel, G. Miiller-Vogt, F. Wienecke, and M. Schenk

*Invited Paper

Vi




DEFECT REDUCTION IN Cd{ xZnxTe EPILAYERS ON GaAsSUBSTRATES 191

Saket Chadda, Kevin Malloy, and John Reno

DIRECT HETEROEPITAXIAL GROWTH OF ZnTe(lOO) ANDCdZnTe(100)/ZnTe(100) ON Si(100) SUBSTRATES BY MBE 197

T.J. de Lyon, S.M. Johnson, C.A. Cockrum, O.K. Wu,and J.A. Roth

CHARACTERIZATION OF GROWTH DEFECTS IN ZnTe SINGLECRYSTALS 203

W. Zhou, J. Wu, M. Dudley, C.H. Su, M.P. Volz, D.C. Gillies,F.R. Szofran, and S.L. Lehoczky

STUDY OF DIFFERENT CADMIUM TELLURIDE MATERIALS DOPEDWITH V, Zn AND Cl GROWN BY VERTICAL BRIDGMAN FURNACEAND BY THM 209

Ch. Steer, L. Chibani, J.M. Koebel, M. Hage-Ali, and P. Siffert

*CRYSTALLOGRAPHIC AND METALLURGICAL CHARACTERIZATION OFRADIATION DETECTOR GRADE CADMIUM TELLURIDE MATERIALS 215

C.J. Johnson, E.E. Eissler, S.E. Cameron, Y. Kong, S. Fan,S. Jovanovic, and K.G. Lynn

*RECENT DEVELOPMENTS IN HIGH RESISTIVITY DETECTOR-GRADE CdTe 231

M. Hage-Ali and P. Siffert

AN ARRAY OF CdTe DETECTORS FOR IMAGING APPLICATIONS 239Y. Eisen and E. Polak

*PROGRESS IN Cd, xZn Te (CZT) RADIATION DETECTORS 249J.F. Butler, F.P. Doty, B. Apotovsky, S.J. Friesenhahn, and C. Lingren

PERFORMANCE CHARACTERISTICS OF CdTe GAMMA-RAYSPECTROMETERS 259

Michael R. Squillante, Herbert Cole, Peter Waer, and Gerald Entine

PART V: INFRARED DETECTORS BASED ON Si,SILICIDES, Pb SALTS, AND NOVEL MATERIALS

CHARACTERIZATION OF DOPED GexSi. MULTIPLE QUANTUMWELL STRUCTURES FOR FAR-IR DETECTORS 267

D.W. Greve, R. Misra, R. Strong, and T.E. Schlesinger

PERFORMANCE CHARACTERISTICS OF N-TYPE Si-Si/Ge QUANTUMWELL INFRARED PHOTODETECTORS 273

V.D. Shadrin, V.T. Coon, and F.L. Serzhenko

IV-VI ON FLUORIDE/Si STRUCTURES FOR IR-SENSORARRAY APPLICATIONS 279

A. Fach, C. Maissen, J. Masek, S. Teodoropol, and H. Zogg

INFRARED-PHOTOCONDUCTIVITY DUE TO SUB-BAND TRANSITIONS

Krenn, G. Bauer, andIN P b T e / P b ^ u J e AND P b S e / P b ^ ^ n ^ e 285

Shu Yuan, G. Springholz, N. Frank, H.M. Kriechbaum

*Invited Paper

VII




BUFFER LAYERS FOR FERROELECTRIC-BASED INFRA-REDDETECTORS ON Si GROWN BY A NOVEL CVD METHOD 291

Gregory T. Stauf, Peter C. Van Buskirk, Peter S. Kirlin,Walter P. Kosar, and Steven Nutt

EFFECTS OF THE SUBSTRATE ON THE RESPONSE OF P(VDF-TrFE)PYROELECTRIC DETECTOR 297

A. Mahrane, M. Djafari-Rouhani, A. Najmi, and D. Esteve

GROWTH OF MBE-CODEPOSITED IrSi3 ON S i ( l l l ) AND Si(100) 303Gary A. Gibson, David A. Lange, and Charles M. Falco

PROCESS OPTIMIZATION FOR THE FABRICATION OF THETHIN PtSi SCHOTTKY BARRIER DIODE IRCCD 309

Wang-Nang Wang, Chia Ho, and Jee-Ming Shiue

IRIDIUM SILICIDE FORMATION BY RAPID THERMAL ANNEALING 313T. Rodriguez, H. Wolters, A. Almendra, J. Sanz-Maudes,M.F. Da Silva, and J.C. Soares

THERMAL STABILITY OF Ir-SILICIDE/SiGe LAYERS GROWN INA DUAL ELECTRON GUN CHAMBER AT ULTRA-HIGH VACUUM(EXTENDED ABSTRACT) 319

C.K. Chung and J. Hwang

INFLUENCE OF OXYGEN ON THE IRIDIUM SILICIDE FORMATIONBY RAPID THERMAL ANNEALING 325

M. Fernandez, T. Rodriguez, A. Almendra, J. Jimenez-Leube,and H. Wolters

HIGH-PERFORMANCE LEAD TELLURIDE-BASED PHOTODETECTORS 329Boris A. Akimov and Dmitriy R. Khokhlov

EFFECT OF SOLUTAL CONVECTION DURING THE GROWTH OFSILICON IN A SANDWICH SYSTEM 335

Sadik Dost, Ned Djilali, Saadet Erbay, and Husnu A. Erbay

AUTHOR INDEX 341

SUBJECT INDEX 343

Viii




Preface

This volume contains written records of many of the papers presented at thesymposium on "Infrared Detectors—Materials, Processing, and Devices," held April14-16, 1993 at the Marriott Hotel in San Francisco, California, as part of the 1993Spring Meeting of the Materials Research Society. The purpose of this symposiumwas to present a forum for the presentation of recent results and state-of-the-artcapabilities for all aspects of the infrared detector field. Results were presented in theareas of materials growth and characterization, processing, and device operation.Materials covered included not only the more conventional HgCdTe, InSb, and Pb salts,but also quantum well structures, and silicides.

We would like to thank all the authors and attendees of the symposium for theirinteresting and stimulating presentations, questions, and comments. Our invitedspeakers, A.B. Bollong, J.F. Butler, M. Hagi-Ali, S.J.C. Irvine, CJ. Johnson, S.R.Kurtz, P. Smith, M.B. Reine, S. Sen, T. Tung, and O.K. Wu, were especiallyimportant in setting a high standard for the symposium.

We gratefully acknowledge Aixtron, Rockwell International, and Semi-ConductorDevices for their financial support for the symposium. We also thank the meetingchairs and the MRS staff for assistance and encouragement.

L. Ralph DawsonAmi Appelbaum

November 1993

ix




MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 279—Beam-Solid Interactions—Fundamentals and Applications, M.A. Nastasi,N. Herbots, L.R. Harriott, R.S. Averback, 1993, ISBN: 1-55899-174-3

Volume 280—Evolution of Surface and Thin Film Microstructure, H.A. Atwater,E. Chason, M. Grabow, M. Lagally, 1993, ISBN: 1-55899-175-1

Volume 281—Semiconductor Heterostructures for Photonic and Electronic Applications,D.C. Houghton, C.W. Tu, R.T. Tung, 1993, ISBN: 1-55899-176-X

Volume 282—Chemical Perspectives of Microelectronic Materials III, C.R. Abernathy,C.W. Bates, D.A. Bohling, W.S. Hobson, 1993, ISBN: 1-55899-177-8

Volume 283—Microcrystalline Semiconductors—Materials Science & Devices,Y. Aoyagi, L.T. Canham, P.M. Fauchet, I. Shimizu, C.C. Tsai, 1993,ISBN: 1-55899-178-6

Volume 284—Amorphous Insulating Thin Films, J. Kanicki, R.A.B. Devine,W.L. Warren, M. Matsumura, 1993, ISBN: 1-55899-179-4

Volume 285—Laser Ablation in Materials Processing—Fundamentals and Applications,B. Braren, J. Dubowski, D. Norton, 1993, ISBN: 1-55899-180-8

Volume 286—Nanophase and Nanocomposite Materials, S. Komarneni, J.C. Parker,G j . Thomas, 1993, ISBN: 1-55899-181-6

Volume 287—Silicon Nitride Ceramics—Scientific and Technological Advances,I-W. Chen, P.F. Becher, M. Mitomo, G. Petzow, T-S. Yen, 1993,ISBN: 1-55899-182-4

Volume 288—High-Temperature Ordered Intermetallic Alloys V, I. Baker,J.D. Whittenberger, R. Darolia, M.H. Yoo, 1993, ISBN: 1-55899-183-2

Volume 289—Flow and Microstructure of Dense Suspensions, LJ . Struble,C.F. Zukoski, G. Maitland, 1993, ISBN: 1-55899-184-0

Volume 290—Dynamics in Small Confining Systems, J.M. Drake, D.D. Awschalom,J. Klafter, R. Kopelman, 1993, ISBN: 1-55899-185-9

Volume 291—Materials Theory and Modelling, P.D. Bristowe, J. Broughton,J.M. Newsam, 1993, ISBN: 1-55899-186-7

Volume 292—Biomolecular Materials, S.T. Case, J.H. Waite, C. Viney, 1993,ISBN: 1-55899-187-5

Volume 293—Solid State Ionics III, G-A. Nazri, J-M. Tarascon, M. Armand, 1993,ISBN: 1-55899-188-3

Volume 294—Scientific Basis for Nuclear Waste Management XVI, C.G. Interrante,R.T. Pabalan, 1993, ISBN: 1-55899-189-1

Volume 295—Atomic-Scale Imaging of Surfaces and Interfaces, D.K. Biegelson,D.S.Y. Tong, D.J. Smith, 1993, ISBN: 1-55899-190-5

Volume 296—Structure and Properties of Energetic Materials, R.W. Armstrong,J.J. Gilman, 1993, ISBN: 1-55899-191-3




MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS

Volume 297—Amorphous Silicon Technology—1993, E.A. Schiff, MJ. Thompson,P.G. LeComber, A. Madan, K. Tanaka, 1993, ISBN: 1-55899-193-X

Volume 298—Silicon-Based Optoelectronic Materials, R.T. Collins, M.A. Tischler,G. Abstreiter, M.L. Thewalt, 1993, ISBN: 1-55899-194-8

Volume 299—Infrared Detectors—Materials, Processing, and Devices, A. Appelbaum,L.R. Dawson, 1993, ISBN: 1-55899-195-6

Volume 300—III-V Electronic and Photonic Device Fabrication and Performance,K.S. Jones, SJ. Pearton, H. Kanber, 1993, ISBN: 1-55899-196-4

Volume 301—Rare-Earth Doped Semiconductors, G.S. Pomrenke, P.B. Klein,D.W. Langer, 1993, ISBN: 1-55899-197-2

Volume 302—Semiconductors for Room-Temperature Radiation Detector Applications,R.B. James, P. Siffert, T.E. Schlesinger, L. Franks, 1993,ISBN: 1-55899-198-0

Volume 303—Rapid Thermal and Integrated Processing II, J.C. Gelpey, J.K. Elliott,J.J. Wortman, A. Ajmera, 1993, ISBN: 1-55899-199-9

Volume 304—Polymer/Inorganic Interfaces, R.L. Opila, A.W. Czanderna, FJ . Boerio,1993, ISBN: 1-55899-200-6

Volume 305— High-Performance Polymers and Polymer Matrix Composites, R.K. Eby,R.C. Evers, D. Wilson, M.A. Meador, 1993, ISBN: 1-55899-201-4

Volume 306—Materials Aspects of X-Ray Lithography, G.K. Celler, J.R. Maldonado,1993, ISBN: 1-55899-202-2

Volume 307—Applications of Synchrotron Radiation Techniques to Materials Science,D.L. Perry, R. Stockbauer, N. Shinn, K. D'Amico, L. Terminello,1993, ISBN: 1-55899-203-0

Volume 308—Thin Films—Stresses and Mechanical Properties IV, P.H. Townsend,J. Sanchez, C-Y. Li, T.P. Weihs, 1993, ISBN: 1-55899-204-9

Volume 309—Materials Reliability in Microelectronics III, K. Rodbell, B. Filter,P. Ho, H. Frost, 1993, ISBN: 1-55899-205-7

Volume 310—Ferroelectric Thin Films III, E.R. Myers, B.A. Tuttle, S.B. Desu,P.K. Larsen, 1993, ISBN: 1-55899-206-5

Volume 311—Phase Transformations in Thin Films—Thermodynamics and Kinetics,M. Atzmon, J.M.E. Harper, A.L. Greer, M.R. Libera, 1993,ISBN: 1-55899-207-3

Volume 312—Common Themes and Mechanisms of Epitaxial Growth, P. Fuoss,J. Tsao, D.W. Kisker, A. Zangwill, T.F. Kuech, 1993,ISBN: 1-55899-208-1

Volume 313—Magnetic Ultrathin Films, Multilayers and Surfaces/MagneticInterfaces—Physics and Characterization (2 Volume Set), C. Chappert,R.F.C. Farrow, B.T. Jonker, R. Clarke, P. Griinberg, K.M. Krishnan,S. Tsunashima/E.E. Marinero, T. Egami, C. Rau, S.A. Chambers,1993, ISBN: 1-55899-211-1

Volume 314—Joining and Adhesion of Advanced Inorganic Materials, A.H. Carim,D.S. Schwartz, R.S. Silberglitt, R.E. Loehman, 1993,ISBN: 1-55899-212-X

Volume 315—Surface Chemical Cleaning and Passivation for SemiconductorProcessing, G.S. Higashi, E.A. Irene, T. Ohmi, 1993,ISBN: 1-55899-213-8

Prior Materials Research Society Symposium Proceedingsavailable by contacting Materials Research Society




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