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INFOVIONS
MAIN PRODUCTS
CONTENTS
Cluster Sputter System
Multi Cathode Sputter System
Combinatorial IBSD System
Combinatorial Sputter System
IBSD System
Roll Coating Sputter System
RTA System
MOCVD System
Ion Source
Ion Energy Analyzer
Effusion Cell
Neutral Beam Etcher
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Cluster Sputter System
INFOVIONs Cluster Sputter System Provides The Best Available
Valuefor Wide Ranging Research and Production Applications
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Cluster Sputter System
Operation Module : Process and Transfer Modules Operation Module
: Process and Transfer Modules Operation Module : Process and
Transfer Modules Operation Module : Process and Transfer Modules
Sputter Source : 6 Magnetron Sputter SourcesSputter Source : 6
Magnetron Sputter SourcesSputter Source : 6 Magnetron Sputter
SourcesSputter Source : 6 Magnetron Sputter Sources Power : RF
& DC Power SelectablePower : RF & DC Power SelectablePower
: RF & DC Power SelectablePower : RF & DC Power Selectable
Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2Gas Control : Ar,
O2 , N2Gas Control : Ar, O2 , N2 Heating Module : Up to 600Heating
Module : Up to 600Heating Module : Up to 600Heating Module : Up to
600CCCC Fully Automated Operating SystemFully Automated Operating
SystemFully Automated Operating SystemFully Automated Operating
System
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Cluster Sputter Software Program-1
Program Features
Display of Cluster sputter system & process condition
Fully Automated Control System
Safety Interlock System for Instrument & users
User authorization Sign up Mode
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Cluster Sputter Software Program-2
Display of PM#1,2,3 image & full conditionDisplay of
PM#1,2,3 image & full conditionDisplay of PM#1,2,3 image &
full conditionDisplay of PM#1,2,3 image & full condition Manual
Control ModeManual Control ModeManual Control ModeManual Control
Mode Display of Pump, Valve Condition & Display of Pump, Valve
Condition & Display of Pump, Valve Condition & Display of
Pump, Valve Condition &
Deposition Time Deposition Time Deposition Time Deposition
Time
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Simultaneous Sputter Deposition in separate 4-Chamber
Possible to Change RF & DC Power easily by using RF/DC
Change-over switch
Up to Thirteen RF/DC Magnetron Sputter Sources
Excellent Film Uniformity on a 6 wafer
Fully Automated Operating System
Special Options are available for our customers
Key Features
Cluster Sputter System
Specifications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Deposition ModeDeposition ModeDeposition ModeDeposition Mode
Co-Sputter Deposition Mode
Sputter SourceSputter SourceSputter SourceSputter Source
Thirteen 6" Magnetron Sputter Source (UHV & HV Type)
Wafer UniformityWafer UniformityWafer UniformityWafer Uniformity
5% on 6" diameter wafer
Power SuppliesPower SuppliesPower SuppliesPower Supplies Seven
1000W RF Power Supply & Five 2000W DC Power Supply
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 600 (Uniformity
5)
Substrate Z-MotionSubstrate Z-MotionSubstrate Z-MotionSubstrate
Z-Motion 0~100mm
Substrate RPMSubstrate RPMSubstrate RPMSubstrate RPM Up to
100RPM
Cassette Chamber CapacityCassette Chamber CapacityCassette
Chamber CapacityCassette Chamber Capacity Up to sixteen wafers
Gas ControlGas ControlGas ControlGas Control Ar, O2, N2
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure PM1,2,3 1 x 10-7 Torr
PM4 5 x 10-8
Torr
Operating SystemOperating SystemOperating SystemOperating System
HMI Software / PLC Based Process Control
Fully Automated System
Safety Interlock System
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Multi Cathode Sputter System
Semiconductor Devices
Conductive Metal / Resistive Metal / Insulating Films
Transparent Electrical Conductors (ITO)
Lens Coatings (Reflective / Anti-reflective / Hard / Color)
Thin Film Sensors
Magnetic Storage Media and Heads (HD, GMR, TMR)
Photovoltaic Thin Films (Solar Cells)
Applications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Deposition ModeDeposition ModeDeposition ModeDeposition Mode
Co-Sputter Deposition Mode
Sputter SourceSputter SourceSputter SourceSputter Source Three
6" Magnetron Sputter Source (HV Type)
Wafer UniformityWafer UniformityWafer UniformityWafer Uniformity
5% on 6" diameter wafer
Power SuppliesPower SuppliesPower SuppliesPower Supplies Three
1000W RF Power Supply
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 500 (Uniformity
5)
Substrate Z-MotionSubstrate Z-MotionSubstrate Z-MotionSubstrate
Z-Motion 0~100mm
Substrate RPMSubstrate RPMSubstrate RPMSubstrate RPM Up to
100RPM
Load Lock Chamber Load Lock Chamber Load Lock Chamber Load Lock
Chamber Fully Automated Wafer Transfer System
Gas ControlGas ControlGas ControlGas Control Ar, O2, N2
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 1 x 10-6 Torr
Operating SystemOperating SystemOperating SystemOperating System
HMI Software / PLC Based Process Control
Fully Automated System
Safety Interlock System
Specifications
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Combinatorial IBD System-1
Combinatorial Synthesis Method
Sequential Ion Beam Sputter System
Co-sputtering Ion Beam Deposition System
Moving Mask System & Substrate Rotation
Excellent Film Uniformity on a 6 wafer
Key Features
Discovery of New Ternary & Binary Material
Using Combinatorial Synthesis
High-throughput Characterization
Excellent Film Uniformity on a 6 wafer
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Combinatorial IBD System-2
Deposition Mode : Step, Wafer layer & CoDeposition Mode :
Step, Wafer layer & CoDeposition Mode : Step, Wafer layer &
CoDeposition Mode : Step, Wafer layer & Co----Sputtering
ModesSputtering ModesSputtering ModesSputtering Modes Operation
Module : Process and Transfer Modules Operation Module : Process
and Transfer Modules Operation Module : Process and Transfer
Modules Operation Module : Process and Transfer Modules Sputter
Source : RF Ion Source with 6cm beam gridSputter Source : RF Ion
Source with 6cm beam gridSputter Source : RF Ion Source with 6cm
beam gridSputter Source : RF Ion Source with 6cm beam grid RF
Generator : 1000WRF Generator : 1000WRF Generator : 1000WRF
Generator : 1000W Beam Energy : 100~1500 eVBeam Energy : 100~1500
eVBeam Energy : 100~1500 eVBeam Energy : 100~1500 eV Gas Control :
Ar, O2 , N2Gas Control : Ar, O2 , N2Gas Control : Ar, O2 , N2Gas
Control : Ar, O2 , N2 Heating Module : Up to 600Heating Module : Up
to 600Heating Module : Up to 600Heating Module : Up to 600CCCC User
friendly LoadUser friendly LoadUser friendly LoadUser friendly
Load----Lock SystemLock SystemLock SystemLock System Fully
Automated Operating SystemFully Automated Operating SystemFully
Automated Operating SystemFully Automated Operating System
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Combinatorial IBD System-3
A
B
100
50
0
100500C100
50
0
Ternary Materials Phase DiagramTernary Materials Phase
DiagramTernary Materials Phase DiagramTernary Materials Phase
Diagram
Combinatorial IBSD Process Features
To prepare Binary & Ternary phase alloying at a high temp.
at one time
Rapid Investigation to find ideal composition of numerous
compounds
Excellent film uniformity on the 6 wafer ( > 98% )
Possible to Change deposition modes
(Combinatorial & Co-sputtering)
Atomically controlled layer-by-layer thin films
Ternary Materials Phase DiagramTernary Materials Phase
DiagramTernary Materials Phase DiagramTernary Materials Phase
Diagram
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Deposition ModeDeposition ModeDeposition ModeDeposition Mode
Step, Wafer layer and Co-sputtering Modes
Sputter SourceSputter SourceSputter SourceSputter Source RF Ion
Beam Sputter Source
Wafer UniformityWafer UniformityWafer UniformityWafer Uniformity
2% on 6" diameter wafer
RF Power SuppliesRF Power SuppliesRF Power SuppliesRF Power
Supplies 1000W RF Power Supply
Ion Beam Sputter DC PowerIon Beam Sputter DC PowerIon Beam
Sputter DC PowerIon Beam Sputter DC Power Beam Voltage:
1500V/1000mA, Accel Voltage: 1500V/300mA
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 600 (Uniformity
5)
Substrate Z-MotionSubstrate Z-MotionSubstrate Z-MotionSubstrate
Z-Motion 0~100mm
Substrate RPMSubstrate RPMSubstrate RPMSubstrate RPM Up to
100RPM
Load Lock Chamber Load Lock Chamber Load Lock Chamber Load Lock
Chamber Fully Automated Wafer Transfer System
Gas ControlGas ControlGas ControlGas Control Ar, O2, N2
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 1 x 10-6
Torr
Operating SystemOperating SystemOperating SystemOperating System
HMI Software / PLC Based Process Control
Fully Automated System
Safety Interlock System
Specifications
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Combinatorial Sputter System
Specifications
Key Features
Discovery of New Ternary & Binary Material
Using Combinatorial Synthesis
High-throughput Characterization
Specifications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Deposition ModeDeposition ModeDeposition ModeDeposition Mode
Step and Wafer layer Modes
Sputter SourceSputter SourceSputter SourceSputter Source 3"-6"
Magnetron Sputter Sources
Wafer UniformityWafer UniformityWafer UniformityWafer Uniformity
5% on 6" diameter wafer
RF Power SuppliesRF Power SuppliesRF Power SuppliesRF Power
Supplies 1000W RF Power Supply
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 600 (Uniformity
5)
Substrate Z-MotionSubstrate Z-MotionSubstrate Z-MotionSubstrate
Z-Motion 0~100mm
Substrate RPMSubstrate RPMSubstrate RPMSubstrate RPM Up to
100RPM
Load Lock Chamber Load Lock Chamber Load Lock Chamber Load Lock
Chamber Fully Automated Wafer Transfer System
Gas ControlGas ControlGas ControlGas Control Ar, O2, N2
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 1 x 10-6 Torr
Operating SystemOperating SystemOperating SystemOperating System
HMI Software / PLC Based Process Control
Fully Automated System
Safety Interlock System
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Ion Beam Sputter Deposition System
Optimal Ion Beam Sputter Deposition
Motorized Three Target Changing System
Dynamic Sequential Layer by Layer Deposition Method
Substrate Rotation, Z-Motion & Heating
Enhanced HMI Software
Excellent film uniformity on a 6 wafer
Corresponding to 300mm Wafer
Fully Automated Operating System
Various User Defined Options
System Features
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Ion Beam Deposition Advantages
Pinhole-free films with enhanced adhesion due to higher ion
energy
Reduction of film stress and film densification are greatly
enhanced
by using ion assist gun
Higher film purity thanks to Low operation pressure (low 10-4
Torr)
Independent control of ion energy and flux that provides control
of
film microstructure, stoichiometry and stress
Stable deposition rates and Excellent film uniformity
Specifications
Ion Beam Sputter Deposition System
Specifications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Deposition ModeDeposition ModeDeposition ModeDeposition Mode
Sequential Layer by Layer Deposition Mode
Sputter SourceSputter SourceSputter SourceSputter Source RF Ion
Beam Sputter Source
Assist SourceAssist SourceAssist SourceAssist Source RF Ion Beam
Assist Source
Wafer UniformityWafer UniformityWafer UniformityWafer Uniformity
2% on 6" diameter wafer
RF Power SuppliesRF Power SuppliesRF Power SuppliesRF Power
Supplies 1000W RF Power Supply
Ion Beam Sputter DC PowerIon Beam Sputter DC PowerIon Beam
Sputter DC PowerIon Beam Sputter DC Power Beam Voltage:
1500V/1000mA, Accel Voltage: 1500V/300mA
Ion Beam Assist DC PowerIon Beam Assist DC PowerIon Beam Assist
DC PowerIon Beam Assist DC Power Beam Voltage: 1000V/1000mA, Accel
Voltage: 1000V/1000mA
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 600 (Uniformity
2)
Substrate Z-MotionSubstrate Z-MotionSubstrate Z-MotionSubstrate
Z-Motion 0~100mm
Substrate RPMSubstrate RPMSubstrate RPMSubstrate RPM Up to
100RPM
Load Lock Chamber Load Lock Chamber Load Lock Chamber Load Lock
Chamber Fully Automated Wafer Transfer System
Gas ControlGas ControlGas ControlGas Control Ar, O2, N2
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 1 x 10-6 Torr
Operating SystemOperating SystemOperating SystemOperating System
HMI Software / PLC Based Process Control
Fully Automated System
Safety Interlock System
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Advantages
Atomic layer growth due to high surface mobility
Atomically smooth surface due to high surface mobility
Excellent film uniformity
Higher film purity thanks to Low operation pressure (low 10-4
Torr)
Acquire kinetic energy and
ZnO target
Ar+
Ion Beam Sputter Deposition System
Ion Beam
Gun
energy and still maintain directionality and kinetic energy
a-ZnO
Atomic Layer Growth !!!Atomic Layer Growth !!!
Plastic
Roughness analysis for Cu thin film(20nm thick on SiO2, Room
Temp.)
Rms RoughRms RoughRms RoughRms Rough Ave RoughAve RoughAve
RoughAve Rough
69.2 55.2
Rms RoughRms RoughRms RoughRms Rough Ave RoughAve RoughAve
RoughAve Rough
9.21 7.26
By Ion Beam Sputter By Sputter
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Roll Coating Sputter System-1
System Features
Well proven rectangular magnetron sputter source
Tension self stabilizing system
Automated Door Access System
High heating capacity to deposit the desired atoms
Excellent film uniformity
Fully Automated Operating System
Various User Defined Options
Web winding moduleWeb winding moduleWeb winding moduleWeb
winding module---- up to 200 mm wideup to 200 mm wideup to 200 mm
wideup to 200 mm wide
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Sputter Source & Heater Power On Sputter Source & Heater
Power On Rectangular Magnetron Sputter SourcesRectangular Magnetron
Sputter Sources
Roll Coating Sputter System-2
Sputter Source & Heater Power On Sputter Source & Heater
Power On Rectangular Magnetron Sputter SourcesRectangular Magnetron
Sputter Sources
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
System TypeSystem TypeSystem TypeSystem Type Roll film
Deposition System
Sputter SourceSputter SourceSputter SourceSputter Source Three
Rectangular Magnetron Sputter Sources
Sample TypeSample TypeSample TypeSample Type Ni-W Metal roll
film
RF Power SuppliesRF Power SuppliesRF Power SuppliesRF Power
Supplies 1000W
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity 25 ~ 700 (Uniformity
5)
Gas ControlGas ControlGas ControlGas Control Ar, O2, N2
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 1 x 10-6 Torr
Operating SystemOperating SystemOperating SystemOperating System
HMI Software / PLC Based Process Control
Fully Automated System
Safety Interlock System
Specifications
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Roll Coating Sputter System-3
Process Control System with Touch ScreenProcess Control System
with Touch ScreenProcess Control System with Touch ScreenProcess
Control System with Touch ScreenProcess Control System with Touch
ScreenProcess Control System with Touch ScreenProcess Control
System with Touch ScreenProcess Control System with Touch
Screen
Web winding moduleWeb winding moduleWeb winding moduleWeb
winding module---- up to 200 mm wideup to 200 mm wideup to 200 mm
wideup to 200 mm wide
System Features
Deposition Process : Multi turn system
Deposition Chamber : Main Chamber & Silver Chamber
System Control : PLC program in PC control
with Touch Screen
Gas Control : Ar, O2, N2
Tension Self Stabilizer System
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Closed-loop temperature control with Pyrometer or
Thermocouple
Fast Digital PID temperature control
Tubular Infrared Halogen Lamps allow very fast ramp rates
Multi-zone control of Infrared Halogen Lamps
Motorized Horizontal Motion Door with Quartz Tray
Cold Wall Chamber Technology provides high process
reproducibility
System Features
Rapid Thermal Annealing System
Full PC control for editing recipes and process data logging
RTA (Rapid Thermal Annealing)
RTO (Rapid Thermal Oxidation)
Ion Implant Activation
Contact alloying
Oxidation and Nitridation
Compound Semiconductor Annealing
Crystallization and Densification
Applications
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Performance Characteristics
Temperature Range: 250 to 1200
Ramp Up Rate : 100/sec
Ramp Down Rate : 100 /sec (at high temp.)
Steady State Temperature Stability: 2
Steady State Time: 1~9999 sec ( 1~600 sec recommended)
Wafer Size: Up to 6 inch
Gas Mixing Capability with Mass Flow Controllers
RTA System
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Maximum Substrate SizeMaximum Substrate SizeMaximum Substrate
SizeMaximum Substrate Size Up to 6"
Process ChamberProcess ChamberProcess ChamberProcess Chamber
Water-cooled Aluminum with quartz window
Heating SourceHeating SourceHeating SourceHeating Source
Multi-zone halogen lamp
Fan lamp air cooling with heat exchanger
High temperature version up to 1200
Temperature ControlTemperature ControlTemperature
ControlTemperature Control K-type Thermocouple (
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RTA Software Program
Program Features
User-Friendly Automatic Control System
Semi Automatic Control System
Recipe System
Data Save System
Data Analysis System
Safety Interlock System
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RTA Software Program
Auto Control Semi Auto Control
Graph Data Sheet
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Closed-loop temperature control with pyrometer or
thermocouple
Tubular Infrared Halogen Lamps allow very fast heating ramp
rates
Convective cooling process by using LN2 showering onto sample
surface
Rapid Heat/Cool exchange following thermal process program
to control sample property
Fast and accurate vertical sample position control by using
servo motor
System Features
Rapid Cooling/Heating System
RTA (Rapid Thermal Annealing)
RTO (Rapid Thermal Oxidation)
Ion Implant Activation
Contact alloying
Oxidation and Nitridation
Compound Semiconductor Annealing
Crystallization and Densification
Applications
Full PC control for editing recipes and process data logging
Safety interlock system
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Performance Characteristics
Temperature Range: 250 to 800
Ramp Up Rate : 100/sec
Ramp Down Rate : 100 /sec
Steady State Temperature Stability: 2
Steady State Time: 1~9999 sec ( 1~600 sec recommended)
Sample Size: Up to 6 inch long metal strip
Gas Mixing Capability with Mass Flow Controllers
Rapid Cooling Processing System
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Maximum Substrate SizeMaximum Substrate SizeMaximum Substrate
SizeMaximum Substrate Size 200X150X(0.5~10)mm
Process ChamberProcess ChamberProcess ChamberProcess Chamber
Water-cooled Aluminum Chamber & Quartz Chamber
Heating SourceHeating SourceHeating SourceHeating Source
Multi-zone halogen lamp
Fan lamp air cooling with heat exchanger
High temperature version up to 800
Cooling SourceCooling SourceCooling SourceCooling Source
Nitrogen, Argon, Liquide Nitrogen
Low temperature version down to 300
Temperature ControlTemperature ControlTemperature
ControlTemperature Control K-type Thermocouple (
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MOCVD System
Patented unique design for gas stream
High heating capacity to deposit the desired atoms on the
wafer
Possible to use various compositions of the gases
Highly uniform thickness
Excellent repeatability
Low maintenance and high throughput
System Features
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MOCVD Unique Showerhead StructureMOCVD Unique Showerhead
Structure
MOCVD System
Specifications
MOCVD Unique Showerhead StructureMOCVD Unique Showerhead
Structure
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Source TypeSource TypeSource TypeSource Type Showerhead
Input Gas StreamInput Gas StreamInput Gas StreamInput Gas Stream
Up to 3 layers
Substrate holderSubstrate holderSubstrate holderSubstrate holder
2" size/3 stage (option)
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 1200 (Uniformity
5)
Substrate MotionSubstrate MotionSubstrate MotionSubstrate Motion
Z-motion, Revolution, Rotation (Option)
Using gasUsing gasUsing gasUsing gas N2, O2, H2, NH3, SiH24
Mo SourceMo SourceMo SourceMo Source 2 channels (Ga, Mn)
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 5 x 10-3 Torr
Operating SystemOperating SystemOperating SystemOperating System
PLC program control with Touch screen
Fully Automated System
Safety Interlock System
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PECVD System
Dual Mixed Feature of PECVD and RTCVD
Halogen Heating (1200) and RF Power Input
Dry & Turbo, Rotary pumping
Gas : Ar, N2, H2, NH2, SiH4, B2H6, PH3, TCS Liquid Direct
Injection, MO source
Deposit the desired films (Crystalline & Amorphous) on the
wafer(4, 6)
PC Automation & LCD (17) displayPC Automation & LCD (17)
displayPC Automation & LCD (17) displayPC Automation & LCD
(17) display
System Features
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Evaporation System
8 inch Lift Off Dome8 inch Lift Off Dome
Used for extensive material coating process. Metal, oxide,
nitride and multi layers.
Lift-off dome and planetary dome make highly uniform thickness,
excellent step coverage and repeatability.
Fully automated computer controlled operating system with safety
interlocks. Possible to select thermal evaporation or
e-beam evaporation.
System Features
8 inch Planetary Dome8 inch Planetary Dome
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Neutral Beam Etcher
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Etching SourceEtching SourceEtching SourceEtching Source
Neutrally Charged Species
Temperature control Temperature control Temperature control
Temperature control ESC Cooling
Wafer size Wafer size Wafer size Wafer size 6 inch
Substrate MotionSubstrate MotionSubstrate MotionSubstrate Motion
Z-motion
Using gasUsing gasUsing gasUsing gas Ar, O2, C2F6
Plasma Analysis Plasma Analysis Plasma Analysis Plasma Analysis
B-Dot Probe, Ion Energy Analyzer
Operating SystemOperating SystemOperating SystemOperating System
PLC program control with Touch screen
Fully Automated System
Safety Interlock System
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INFOVIONs Ion Milling System utilizes a multi-platen, planetary
(double rotation)stage assembly and a highly uniformity etch across
each sample.
Ion Beam Milling System
System FeaturesSystem FeaturesSystem FeaturesSystem Features
SpecificationsSpecificationsSpecificationsSpecifications
Main chamberMain chamberMain chamberMain chamber Ultimate
pressure: Turbo pumping High 10-7 Torr
Ion gunIon gunIon gunIon gun -Beam aperture: Grid dia. 380 mm,
Convex type
- Ion beam energy: 1.5 KeV
Specifications
Largest commercial broad-beam ion source
Dia32 double walled, Water cooled Chamber
Beam Uniformity : 5% over 30cm diameter
Beam Power : 300-1200eV, 5000mA
Molybdenum, Self-aligning ion optics
Double rotation planetary type Sample Stage
Excellent repeatability
Low maintenance and high throughput
System Features
Substrate holderSubstrate holderSubstrate holderSubstrate holder
-Substrate Size : 3inch 5EA At Once installation possibility
- 3inch Full Wafer & scrap Sample All use Substrate
Holder
- Rotation type: Double rotation planetary type, various etching
angle
- Motorized angle setting
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CIGS Solar Cell Cluster System
System Features
INFOVIONs CIGS Solar Cell System Provides the Best Available
Value
for Wide Ranging Research and Production Applications
System Features
CIGS multi deposition system
Single soda-lime glass (100x100/0.7~3t)
Vacuum cluster system
Separate entry/exit module
PM 1 : Isolated CIGS evaporation module
PM 2 : Ni, Al evaporation module
PM 4 : AZO, ZnO sputter process module
PM 5 : CIGS sputter process module
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INFOVIONs CIGS Solar Cell System Provides the Best Available
Value
for Wide Ranging Research and Production Applications
Fully automation with data logging capabilities Single soda-lime
glass (100x100/0.7~3t) Vacuum cluster system Separate entry/exit
module PM 1 : CIGS sputter process module- RF & pulsed DC
sputter- 4 Magnetron sputter gun / 3set- RF power: 600W / 1set
System Features
CIGS Solar Cell Cluster System
- RF power: 600W / 1set- Pulse DC power: 800V 7.2A 150kHz /
2set- Substrate heating (max 650) PM 2 : AZO, ZnO sputter process
module- 4 Magnetron sputter gun / 3set- RF power: 600W / 1set-
Pulse DC power: 800V 7.2A 150kHz / 2set- Substrate heating (max
650) PM 3 : Ni, Al evaporation module- E-beam source: 25cc / 4
pocket / 1set- E-beam source shutter with air actuator- Substrate
heating (max 650) PM 4 : Isolated CIGS evaporation module- Effusion
cell evaporator- Isolated operation system (exclusive use
load-lock)- 10cc Cu, In, Ga, Na cell source with shutter- 150cc Se,
S cell source with shutter- Substrate heating (max 650)- EIES and
thickness controller
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---- InInInIn----linelinelineline 70"70"70"70" PDPPDPPDPPDP
GlassGlassGlassGlass ITO( IndiumITO( IndiumITO( IndiumITO(
Indium----TinTinTinTin----Oxide) , Oxide) , Oxide) , Oxide) , , MgO
, MgO , MgO , MgO
- ChamberChamberChamberChamber : 5000mm(l) x 1410mm(h) x
300mm(w): 5000mm(l) x 1410mm(h) x 300mm(w): 5000mm(l) x 1410mm(h) x
300mm(w): 5000mm(l) x 1410mm(h) x 300mm(w)
- Sputter Sputter Sputter Sputter : 4 Target Source : 4 Target
Source : 4 Target Source : 4 Target Source , , , , , , , , : 95% :
95% : 95% : 95% , Tack Time : 5min/ Batch, Tack Time : 5min/ Batch,
Tack Time : 5min/ Batch, Tack Time : 5min/ Batch
---- 70"70"70"70" PDPPDPPDPPDP ITO ITO ITO ITO , , , , : 400/
min, : 400/ min, : 400/ min, : 400/ min, : 85%: 85%: 85%: 85%, , ,
, : : : : 7%7%7%7%
In Line PDP System
70"70"70"70" Glass Sputtering SystemGlass Sputtering SystemGlass
Sputtering SystemGlass Sputtering System
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Arc Sputter System
System Features
Arc Ion Sputtering System
Oil Diffusion, Rotary Booster & Holding Pump
Gas: Ar, N2, H2, C2H2, GN2 (Vent)
PC, Automation & LCD (19) Display
Plasma Gun 2300 x 80mm (Linear Anode Ion Source)
Dia 482780h x 1220 Water Cooled chamber
Functional Coating System (Temp Max 450)
Rotation, Revolution, Sample Stage Rotation, Revolution, Sample
Stage Rotation, Revolution, Sample Stage Rotation, Revolution,
Sample Stage
Streed Arc Gun 80 35eaStreed Arc Gun 80 35eaStreed Arc Gun 80
35eaStreed Arc Gun 80 35ea
Low Maintenance and High ThroughputLow Maintenance and High
ThroughputLow Maintenance and High ThroughputLow Maintenance and
High Throughput
Sample 2200mm 220Sample 2200mm 220Sample 2200mm 220Sample 2200mm
220
Rotation Post 8eaRotation Post 8eaRotation Post 8eaRotation Post
8ea
Sample BiasSample BiasSample BiasSample Bias
Electric Magnet for UniformityElectric Magnet for
UniformityElectric Magnet for UniformityElectric Magnet for
Uniformity
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INFOVIONS
Core Source & System Components
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Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Ion Source Type Ion Source Type Ion Source Type Ion Source Type
RF Ion Source
Beam Aperture Beam Aperture Beam Aperture Beam Aperture 60
Beam Energy Beam Energy Beam Energy Beam Energy 100~1500eV
Using GasUsing GasUsing GasUsing Gas Reactive & Inert
gas
Cooling Type Cooling Type Cooling Type Cooling Type Water
cooling
Specifications
RF Ion Source
INFOINFO--RFRF--60G60G
Features
Contamination-free Ion Source
High Flux with Wide Range Energy
Reactive & Inert gas Operation
Easy Maintenance
Good Compatibility
Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber
Quartz
Plasma source Plasma source Plasma source Plasma source ICP
Grid Configuration Grid Configuration Grid Configuration Grid
Configuration Mo multi grids
Beam Neutralization Beam Neutralization Beam Neutralization Beam
Neutralization Plasma Bridge Neutralizer, RF Neutralizer on
request
Mounting Configuration Mounting Configuration Mounting
Configuration Mounting Configuration Flange DN-160CF, DN-160ISO on
request
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Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Ion Source Type Ion Source Type Ion Source Type Ion Source Type
Hollow Cathode Ion Source
Beam Aperture Beam Aperture Beam Aperture Beam Aperture 55
Beam Energy Beam Energy Beam Energy Beam Energy 100~1000eV
Using GasUsing GasUsing GasUsing Gas Reactive & Inert
gas
Cooling Type Cooling Type Cooling Type Cooling Type Water
cooling
Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber
Tantalum
Specifications
Hollow Cathode Ion Source
INFOINFO--HCHC--55/55G55/55G
Features
Compatible with Reactive Conditions
Wide Range Operation, easy-to-start
Continuous Working
Dual Chamber for Plasma Generation
Various Application
Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber
Tantalum
Plasma source Plasma source Plasma source Plasma source
Grid Configuration Grid Configuration Grid Configuration Grid
Configuration Mo multi grids
Beam Neutralization Beam Neutralization Beam Neutralization Beam
Neutralization Plasma Bridge Neutralizer, RF Neutralizer on
request
Mounting Configuration Mounting Configuration Mounting
Configuration Mounting Configuration Flange DN-160CF, DN-160ISO on
request
-
Specifications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Ion Source Type Ion Source Type Ion Source Type Ion Source Type
RF Ion Source
Beam Aperture Beam Aperture Beam Aperture Beam Aperture
60X450mm
Beam Energy Beam Energy Beam Energy Beam Energy 100~1500eV
Using GasUsing GasUsing GasUsing Gas Reactive & Inert
gas
Cooling Type Cooling Type Cooling Type Cooling Type Water
cooling
Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber
Quartz
Linear Ion Source-1
INFOINFO--RFRF--60X450G60X450G
Features
Applicable to 2th Generation Glass Substrates
Uniform Processing for Ultra Large Substrates
Contamination-free Ion Source
Reactive & Inert gas Operation
Low & Easy Maintenance
Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber
Quartz
Plasma source Plasma source Plasma source Plasma source ICP
Grid Configuration Grid Configuration Grid Configuration Grid
Configuration Mo multi grids
Beam Neutralization Beam Neutralization Beam Neutralization Beam
Neutralization Plasma Bridge Neutralizer, RF Neutralizer on
request
Mounting Configuration Mounting Configuration Mounting
Configuration Mounting Configuration Rectangular O-ring type
flange
-
Specifications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Ion Source Type Ion Source Type Ion Source Type Ion Source Type
RF Ion Source
Beam Aperture Beam Aperture Beam Aperture Beam Aperture
60X2010mm
Beam Energy Beam Energy Beam Energy Beam Energy 100~1500eV
Using GasUsing GasUsing GasUsing Gas Reactive & Inert
gas
Cooling Type Cooling Type Cooling Type Cooling Type Water
cooling
Plasma Chamber Plasma Chamber Plasma Chamber Plasma Chamber
Quartz
Linear Ion Source-2
INFOINFO--RFRF--60X2010G60X2010G
Features
Applicable to 7th Generation Glass Substrates
Uniform Processing for Ultra Large Substrates
Contamination-free Ion Source
Reactive & Inert gas Operation
Low & Easy Maintenance
Plasma source Plasma source Plasma source Plasma source ICP
Grid Configuration Grid Configuration Grid Configuration Grid
Configuration Mo multi grids
Beam Neutralization Beam Neutralization Beam Neutralization Beam
Neutralization Plasma Bridge Neutralizer, RF Neutralizer on
request
Mounting Configuration Mounting Configuration Mounting
Configuration Mounting Configuration Rectangular O-ring type
flange
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Gate Valve for PDP
-
Round Gate Valve
-
Features
Analysis of electron and ion energy distribution functions
Minimum perturbation of ion flight path and constant ion
transmission at all energies
Using the magnet to reduce secondary electron emission
Using three grids to retard scattered electrons and prevent
Ion Energy Analyzer-1
contamination
Possible to use as a Faraday Cup for charged particle flux
measurement
Specifications
System FeaturesSystem FeaturesSystem FeaturesSystem Features
SpecificationsSpecificationsSpecificationsSpecifications
Input PowerInput PowerInput PowerInput Power Max. 1000 V
Aperture SizeAperture SizeAperture SizeAperture Size 20mm
dia.
Shield SizeShield SizeShield SizeShield Size 58mm dia.
Operating Temp.Operating Temp.Operating Temp.Operating Temp.
Max. 300
Pressure RangePressure RangePressure RangePressure Range 5 x
10-3 ~ 5 x 10-8 Torr
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Features
Versatile transfer lens system
Compact design
Magnetic shielded construction
True multi-technique capabilities
Windows based Advantage data system
Ion Energy Analyzer-2
Windows based Advantage data system
Specifications
System FeaturesSystem FeaturesSystem FeaturesSystem Features
SpecificationsSpecificationsSpecificationsSpecifications
1000 V/1A
-500 V/1A
Plasma chamberPlasma chamberPlasma chamberPlasma chamber
Quartz
Grid configurationGrid configurationGrid configurationGrid
configuration Mo Grid
Operating Temp.Operating Temp.Operating Temp.Operating Temp.
Max. 300
Pressure RangePressure RangePressure RangePressure Range 5 x
10-3 ~ 5 x 10-8 Torr
Input PowerInput PowerInput PowerInput Power
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MOMBE Effusion Cell
Features
Versatile and compact design to use metal organic source
Operating temperature range is 30C ~ 500C
Provides easy access to injector for cleaning
Easy to install due to CF flange type mounting
Quick connector type power and thermocouple terminals
A variety of different crucible materials are available
Specifications
System FeaturesSystem FeaturesSystem FeaturesSystem Features
SpecificationsSpecificationsSpecificationsSpecifications
Total height Total height Total height Total height 440mm
Injection part height Injection part height Injection part
height Injection part height 88.5mm
Injection part diameter Injection part diameter Injection part
diameter Injection part diameter 48mm
Nozzle SizeNozzle SizeNozzle SizeNozzle Size 0.5~3mm
Temperature range Temperature range Temperature range
Temperature range 30C ~ 500C
ThermocoupleThermocoupleThermocoupleThermocouple K-Type
A variety of different crucible materials are available
Application paper:
- M.S. Yun, M.S. Kim, Y.D. Go, J.H. Hong, I.G. Yun,
Microelectronic Engineering, 77 (2005), P.54
- M.S. Kim, J.H. Hong, M.C. Jeong, J.M. Myoung,
Applied Surface Science, 227 (2004), P.398
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OLED Effusion Cell
Features
Versatile and compact design for use of low temperature
volatile
organics
Operate at low temperatures through superior thermal control
in
30C ~ 700C range
Provides easy access to crucible for cleaning
Easy to installation
Specifications
System FeaturesSystem FeaturesSystem FeaturesSystem Features
SpecificationsSpecificationsSpecificationsSpecifications
Total height Total height Total height Total height 70mm
Injection part diameter Injection part diameter Injection part
diameter Injection part diameter 50mm
Standard crucible Standard crucible Standard crucible Standard
crucible 4cc high purity alumina
Temperature range Temperature range Temperature range
Temperature range 30C ~ 700C
Charge capacity Charge capacity Charge capacity Charge capacity
3cc
ThermocoupleThermocoupleThermocoupleThermocouple K-Type
Easy to installation
Base mounted power and thermocouple terminals
Distribute coatings evenly by directing vapor
Ideal for use in tandem for co-deposition of dye-doped
organic
emissive films
Various material of crucibles
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Specifications
Base System FeaturesBase System FeaturesBase System FeaturesBase
System Features
SpecificationsSpecificationsSpecificationsSpecifications
Source TypeSource TypeSource TypeSource Type Showerhead
Input Gas StreamInput Gas StreamInput Gas StreamInput Gas Stream
Up to 3 layers
Substrate holderSubstrate holderSubstrate holderSubstrate holder
2" size/3 stage (option)
Substrate Heating CapacitySubstrate Heating CapacitySubstrate
Heating CapacitySubstrate Heating Capacity Up to 1200 (Uniformity
5)
Substrate MotionSubstrate MotionSubstrate MotionSubstrate Motion
Z-motion, Revolution, Rotation (Option)
Using gasUsing gasUsing gasUsing gas N2, O2, H2, NH3, SiH24
MOCVD Shower Head
Features
Plurality of gases in showerhead are not mixed before
injection
Uniform gas distribution
Anti-oxidant and stable showerhead structure in high
temperature
Unique honeycomb structure
Each component of showerhead is brazed in vacuum condition
Using gasUsing gasUsing gasUsing gas N2, O2, H2, NH3, SiH24
Mo SourceMo SourceMo SourceMo Source 2 channels (Ga, Mn)
Ultimate pressureUltimate pressureUltimate pressureUltimate
pressure 5 x 10-3 Torr
Operating SystemOperating SystemOperating SystemOperating System
PLC program control with Touch screen
Fully Automated System
Safety Interlock System
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Specifications
System FeaturesSystem FeaturesSystem FeaturesSystem Features
SpecificationsSpecificationsSpecificationsSpecifications
MaterialMaterialMaterialMaterial Flange and tube: SUS 304
Actuator housing and stop clamps:
Anodized aluminum
Magnet TypeMagnet TypeMagnet TypeMagnet Type NdFeB or Alnico(for
high temp.)
Pressure range Pressure range Pressure range Pressure range ATM
to 1 x 10-11
Torr (HV/UHV)
Operating TemperatureOperating TemperatureOperating
TemperatureOperating Temperature -20 to 250
Magnet Transfer Rod
Features
Continuous rotary motion when unguided
Long stroke (up to 2000mm)
Manual or Motorized linear travel actuator
Greatly enhanced durability and stability by using
space sustaining transport unit
Low vibration and deflection of sample holder
Operating TemperatureOperating TemperatureOperating
TemperatureOperating Temperature -20 to 250
Decoupling Axial load Decoupling Axial load Decoupling Axial
load Decoupling Axial load 0.8 kg
TorqueTorqueTorqueTorque 5.2 kg.m
Lateral loadLateral loadLateral loadLateral load 12 kg Max.
DimensionDimensionDimensionDimension 78 x (670mm or
longer)*Modifications are available
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Mask ChangeOLED Glass Chucking Module
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OLED Glass Chucking Module
Overview
Main Plate
Cylinder for Glass Stretching
Glass (730x920)
Stretching Bracket
Mask Holder
Mask
Cylinder for Mask Chucking
Cylinder for Glass Chucking
Glass Holder
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In-line IBD System
Ion Source Moving
Ion Beam Target Ion Beam Target
Ion Beam1 Ion Beam 2(Deposition) (Cleaning)
Target
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