pss current topics in solid state physics c status solidi www.pss-c.com physica REPRINT Influence of bias voltage on the crystallographic orientation and morphology of sputter deposited yttria stabilized zirconia (YSZ) thin films C. Amaya 1 , J. Caicedo 1,2 , G. Bejarano 2, 4 , C. A. Cortés Escobedo 3 , J. Muñoz-Saldaña 3 , G. Zambrano 1 , and P. Prieto 1 1 Thin Films Group, Excellence Center for Novel Materials, Universidad del Valle, Cali, Colombia 2 Hard Coatings Laboratory, CDT-ASTIN SENA, Cali, Colombia 3 Center for Investigation and Advanced Studies, CINVESTAV-IPN, Querétaro, México 4 Group of Corrosion and Protection, Antioquia University, Medellín, Colombia Received 16 October 2006, revised 13 March 2007, accepted 30 May 2007 Published online 26 October 2007 PACS 68.35.Bs, 68.55.Jk, 68.55.Nq, 81.15.Cd ZrO 2 -8% mol. Y 2 O 3 (8YSZ) thin films were deposited onto silicon [100] and AISI 304 stainless steel sub- strates by r.f. (13.56 MHz) multi-target magnetron sputtering. To improve the adhesion of a YSZ mono- layer to the stainless steel substrate, a buffer layer of Al 2 O 3 was incorporated too. Crystal structure and Infrared (IR) absorption bands of YSZ were investigated as functions of substrate bias by X-ray diffracti- on (XRD) and Fourier Transformed Infrared Spectroscopy (FTIR), respectively. The influence of the bias voltage on the roughness, grain size, and microstructure of deposited thin films was determined by AFM and SEM. XRD results show the presence of a tetragonal phase with [111] and [200] orientations. On the other hand, FTIR spectra exhibit the 2E u and F 1u modes as two broad bands in the frequency range of 450 ~ 550 cm –1 and 550 ~ 650 cm –1 , corresponding to the tetragonal and cubic phases of ZrO 2 , respectively. In this work we present the systematic influence of the bias voltage on the crystalline structure, the presence of the tetragonal phase and morphology of the YSZ thin films. The XRD, FTIR, and AFM results indicate that when the bias voltage increases from -20 V to -60 V the preferential crystallographic orientation of YSZ tetragonal phase changes from [111] to [200], and the percentage of the tetragonal phase diminishes, as well as the grain size of deposited films from (560 ± 5) to (470 ± 5) nm. phys. stat. sol. (c) 4, No. 11, 4288– 4293 (2007) / DOI 10.1002/pssc.200675925
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Influence of bias voltage on the crystallographic orientation and morphology of sputter deposited yttria stabilized zirconia (YSZ) thin films
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p s scurrent topics in solid state physics
c
statu
s
soli
di
www.pss-c.comph
ysi
ca
REPRINT
Influence of bias voltage on the crystallographic orientation
and morphology of sputter deposited yttria stabilized zirconia
(YSZ) thin films
C. Amaya1
, J. Caicedo1,2
, G. Bejarano2, 4
, C. A. Cortés Escobedo3
, J. Muñoz-Saldaña3
,
G. Zambrano1
, and P. Prieto1
1
Thin Films Group, Excellence Center for Novel Materials, Universidad del Valle, Cali, Colombia
2
Hard Coatings Laboratory, CDT-ASTIN SENA, Cali, Colombia
3
Center for Investigation and Advanced Studies, CINVESTAV-IPN, Querétaro, México
4
Group of Corrosion and Protection, Antioquia University, Medellín, Colombia
Received 16 October 2006, revised 13 March 2007, accepted 30 May 2007
Published online 26 October 2007
PACS 68.35.Bs, 68.55.Jk, 68.55.Nq, 81.15.Cd
ZrO2-8% mol. Y
2O
3(8YSZ) thin films were deposited onto silicon [100] and AISI 304 stainless steel sub-
strates by r.f. (13.56 MHz) multi-target magnetron sputtering. To improve the adhesion of a YSZ mono-
layer to the stainless steel substrate, a buffer layer of Al2O
3was incorporated too. Crystal structure and
Infrared (IR) absorption bands of YSZ were investigated as functions of substrate bias by X-ray diffracti-
on (XRD) and Fourier Transformed Infrared Spectroscopy (FTIR), respectively. The influence of the bias
voltage on the roughness, grain size, and microstructure of deposited thin films was determined by AFM
and SEM. XRD results show the presence of a tetragonal phase with [111] and [200] orientations. On the
other hand, FTIR spectra exhibit the 2Eu
and F1u
modes as two broad bands in the frequency range of 450
~ 550 cm–1
and 550 ~ 650 cm–1
, corresponding to the tetragonal and cubic phases of ZrO2, respectively. In
this work we present the systematic influence of the bias voltage on the crystalline structure, the presence
of the tetragonal phase and morphology of the YSZ thin films. The XRD, FTIR, and AFM results indicate
that when the bias voltage increases from -20 V to -60 V the preferential crystallographic orientation of
YSZ tetragonal phase changes from [111] to [200], and the percentage of the tetragonal phase diminishes,
as well as the grain size of deposited films from (560 ± 5) to (470 ± 5) nm.
Influence of bias voltage on the crystallographic orientation
and morphology of sputter deposited yttria stabilized zirconia
(YSZ) thin films
C. Amaya∗,1
, J. Caicedo1,2
, G. Bejarano2, 4
, C. A. Cortés Escobedo3, J. Muñoz-Saldaña
3,
G. Zambrano1, and P. Prieto
1
1 Thin Films Group, Excellence Center for Novel Materials, Universidad del Valle, Cali, Colombia 2 Hard Coatings Laboratory, CDT-ASTIN SENA, Cali, Colombia 3 Center for Investigation and Advanced Studies, CINVESTAV-IPN, Querétaro, México 4 Group of Corrosion and Protection, Antioquia University, Medellín, Colombia
Received 16 October 2006, revised 13 March 2007, accepted 30 May 2007
Published online 26 October 2007
PACS 68.35.Bs, 68.55.Jk, 68.55.Nq, 81.15.Cd
ZrO2-8% mol. Y2O3 (8YSZ) thin films were deposited onto silicon [100] and AISI 304 stainless steel sub-
strates by r.f. (13.56 MHz) multi-target magnetron sputtering. To improve the adhesion of a YSZ mono-
layer to the stainless steel substrate, a buffer layer of Al2O3
was incorporated too. Crystal structure and
Infrared (IR) absorption bands of YSZ were investigated as functions of substrate bias by X-ray diffracti-
on (XRD) and Fourier Transformed Infrared Spectroscopy (FTIR), respectively. The influence of the bias
voltage on the roughness, grain size, and microstructure of deposited thin films was determined by AFM
and SEM. XRD results show the presence of a tetragonal phase with [111] and [200] orientations. On the
other hand, FTIR spectra exhibit the 2Eu
and F1u
modes as two broad bands in the frequency range of 450
~ 550 cm–1
and 550 ~ 650 cm–1, corresponding to the tetragonal and cubic phases of ZrO2, respectively. In
this work we present the systematic influence of the bias voltage on the crystalline structure, the presence
of the tetragonal phase and morphology of the YSZ thin films. The XRD, FTIR, and AFM results indicate
that when the bias voltage increases from -20 V to -60 V the preferential crystallographic orientation of
YSZ tetragonal phase changes from [111] to [200], and the percentage of the tetragonal phase diminishes,
as well as the grain size of deposited films from (560 ± 5) to (470 ± 5) nm.