Infineon SiGe WiFi WLAN LNA BFP720 Rev. 1UMTS, WLAN,UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions • High performance general purpose

RF & Protect ion Devices

Data Sheet Revision 1.1, 2012-10-19

BFP720Low Noise Silicon Germanium Bipolar RF Transistor

Edition 2012-10-19Published byInfineon Technologies AG81726 Munich, Germany© 2013 Infineon Technologies AGAll Rights Reserved.

Legal DisclaimerThe information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party.

InformationFor further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).

WarningsDue to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office.Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

http://www.infineon.com

BFP720

Data Sheet 3 Revision 1.1, 2012-10-19

Trademarks of Infineon Technologies AGAURIX™, C166™, CanPAK™, CIPOS™, CIPURSE™, EconoPACK™, CoolMOS™, CoolSET™,CORECONTROL™, CROSSAVE™, DAVE™, DI-POL™, EasyPIM™, EconoBRIDGE™, EconoDUAL™,EconoPIM™, EconoPACK™, EiceDRIVER™, eupec™, FCOS™, HITFET™, HybridPACK™, I²RF™,ISOFACE™, IsoPACK™, MIPAQ™, ModSTACK™, my-d™, NovalithIC™, OptiMOS™, ORIGA™,POWERCODE™; PRIMARION™, PrimePACK™, PrimeSTACK™, PRO-SIL™, PROFET™, RASIC™,ReverSave™, SatRIC™, SIEGET™, SINDRION™, SIPMOS™, SmartLEWIS™, SOLID FLASH™, TEMPFET™,thinQ!™, TRENCHSTOP™, TriCore™.

Other TrademarksAdvance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, KEIL™,PRIMECELL™, REALVIEW™, THUMB™, µVision™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSARdevelopment partnership. Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™,FirstGPS™ of Trimble Navigation Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG.FLEXGO™ of Microsoft Corporation. FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ ofHilgraeve Incorporated. IEC™ of Commission Electrotechnique Internationale. IrDA™ of Infrared DataAssociation Corporation. ISO™ of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ ofMathWorks, Inc. MAXIM™ of Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor GraphicsCorporation. MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATAMANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ ofOmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RFMicro Devices, Inc. SIRIUS™ of Sirius Satellite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of TexasInstruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of DiodesZetex Limited.Last Trademarks Update 2011-11-11

BFP720, Low Noise Silicon Germanium Bipolar RF Transistor

Revision History: 2012-10-19, Revision 1.1Page Subjects (changes since previous revision) This data sheet replaces the revision from 2009-01-20.

The product itself has not been changed and the device characteristics remain unchanged.Only the product description and information available in the data sheet have been expanded and updated.

BFP720

Table of Contents


Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5

List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6

1 Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7

2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9

4 Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10

5 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125.1 DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125.2 General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125.3 Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135.4 Characteristic Curves . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

6 Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23

7 Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

Table of Contents

BFP720

List of Figures


Figure 4-1 Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Figure 4-2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 4-3 Permissible Pulse Load RthJS = f (tp). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11Figure 5-1 BFP720 Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Figure 5-2 Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE = Parameter in V . . . . . . . . . . . . . . . . . . . . . 18Figure 5-3 Power Gain Gma, Gms, |S21|2 = f (f), VCE = 3 V, IC = 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18Figure 5-4 Input Matching S11 = f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 5-5 Output Matching S22 = f (f), VCE = 3 V, IC = 5 mA / 13 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19Figure 5-6 Source Impedance Zopt for NFmin = f (f), VCE = 3 V, IC = 5mA / 13 mA. . . . . . . . . . . . . . . . . . . . . . 20Figure 5-7 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20Figure 5-8 Noise Figure NFmin = f (f), VCE = 3 V, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 5-9 Power Gain Gma, GmS = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . . . 21Figure 5-10 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . . . 22Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 7-3 Marking Description (Marking BFP720: R9s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24

List of Figures

BFP720

List of Tables


Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9Table 4-1 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10Table 5-1 DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 5-2 AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13Table 5-4 AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-5 AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 5-7 AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15Table 5-8 AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 5-9 AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16Table 5-10 AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17

List of Tables

BFP720

Product Brief


1 Product Brief

The BFP720 is a very low noise wideband NPN bipolar RF transistor. The device is based on Infineon’s reliablehigh volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supportsvoltages up to VCEO = 4 V and currents up to IC = 25 mA. The device is especially suited for mobile applications inwhich low power consumption is a key requirement. The typical transition frequency is approximately 45 GHz,hence the device offers high power gain at frequencies up to 12 GHz in amplifier applications. The device ishoused in an easy to use plastic package with visible leads.

BFP720

Features


2 Features

Applications

FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone,UMTS, WLAN,UWB, LNB

Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions

• High performance general purpose wideband LNA transistor• Operation voltage: 1.0 V to 4.0 V• Transistor geometry optimized for low-current applications• 26 dB maximum stable gain at 1.9 GHz and only 13 mA• 15 dB maximum available gain at 10 GHz and only 13 mA• 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz• High linearity OP1dB = 8.5 dBm and OIP3 = 23 dBm at 5.5 GHz

and low current consumption of 13 mA• Easy to use Pb-free (RoHS compliant) and halogen-free standard

package with visible leads• Qualification report according to AEC-Q101 available

Product Name Package Pin Configuration MarkingBFP720 SOT343 1 = B 2 = E 3 = C 4 = E R9s

12

34

BFP720

Maximum Ratings


3 Maximum Ratings

Attention: Stresses above the max. values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit.

Table 3-1 Maximum Ratings at TA = 25 °C (unless otherwise specified)Parameter Symbol Values Unit Note /

Test ConditionMin. Typ. Max.Collector emitter voltage VCEO

––

––

4.03.5

V Open baseTA = 25 °CTA = -55 °C

Collector emitter voltage VCES – – 13 V E-B short circuitedCollector base voltage VCBO – – 13 V Open emitterEmitter base voltage VEBO – – 1.2 V Open collectorCollector current IC – – 25 mABase current IB – – 2 mATotal power dissipation1)

1)TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point to the pcb

Ptot – – 100 mW TS ≤ 108 °CJunction temperature TJ – – 150 °CStorage temperature TStg -55 – 150 °C

BFP720

Thermal Characteristics


4 Thermal Characteristics

Figure 4-1 Total Power Dissipation Ptot = f (Ts)

Table 4-1 Thermal Resistance Parameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Junction - soldering point1)

1)For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation)RthJS – 420 – K/W –

0

20

40

60

80

100

120

0 50 100 150

Ts [°C]

Ptot

[mW

]

0

20

40

60

80

100

120

0 50 100 150

Ts [°C]

Ptot

[mW

]

BFP720

Thermal Characteristics


Figure 4-2 Permissible Pulse Load Ptot_max / Ptot_DC = f (tp)

Figure 4-3 Permissible Pulse Load RthJS = f (tp)

1

10

1.E

-07

1.E

-06

1.E

-05

1.E

-04

1.E-

03

1.E-

02

1.E-

01

1.E+

00

tp [sec]

Ptot

_max

/ Pto

t_D

CD= 0

D= .005

D= .01

D= .02

D= .05

D= .1

D= .2

D= .5D=0

D=0.5

1

10

1.E

-07

1.E

-06

1.E

-05

1.E

-04

1.E-

03

1.E-

02

1.E-

01

1.E+

00

tp [sec]

Ptot

_max

/ Pto

t_D

CD= 0

D= .005

D= .01

D= .02

D= .05

D= .1

D= .2

D= .5D=0

D=0.5

100

1000

1.E-

07

1.E-

06

1.E-

05

1.E-

04

1.E-

03

1.E-

02

1.E-

01

1.E+

00

tp [sec]

Rth

JS[K

/W]

D= .5D= .2D= .1D= .05D= .02D= .01D= .005D= 0

D=0

D=0.5

100

1000

1.E-

07

1.E-

06

1.E-

05

1.E-

04

1.E-

03

1.E-

02

1.E-

01

1.E+

00

tp [sec]

Rth

JS[K

/W]

D= .5D= .2D= .1D= .05D= .02D= .01D= .005D= 0

D=0

D=0.5

BFP720

Electrical Characteristics


5 Electrical Characteristics

5.1 DC Characteristics

5.2 General AC Characteristics

Table 5-1 DC Characteristics at TA = 25 °CParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Collector emitter breakdown voltage V(BR)CEO 4 4.7 – V IC = 1 mA, IB = 0 mACollector emitter cutoff current ICES – – 30 μA VCE = 13 V, VBE = 0 VCollector base cutoff current ICBO – – 100 nA VCB = 5 V, IE = 0 mAEmitter base cutoff current IEBO – – 2 μA VEB = 0.5 V, IC = 0 mADC current gain hFE 160 250 400 IC = 13 mA, VCE = 3 V

pulse measured

Table 5-2 AC Characteristics at TA = 25 °CParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Transition frequency fT – 45 – GHz IC = 13 mA, VCE = 3 V

f = 1 GHzCollector base capacitance CCB – 0.06 – pF VCB = 3 V, VBE = 0 V

f = 1 MHzemitter grounded

Collector emitter capacitance CCE – 0.35 – pF VCE = 3 V, VBE = 0 Vf = 1 MHzbase grounded

Emitter base capacitance CEB – 0.35 – pF VEB = 0.5 V, VCB = 0 Vf = 1 MHzcollector grounded

BFP720



5.3 Frequency Dependent AC Characteristics

Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C

Figure 5-1 BFP720 Testing Circuit

Table 5-3 AC Characteristics, VCE = 3 V, f = 150 MHzParameter Symbol Values Unit Note / Test Condition

Min. Typ. Max.Maximum Power GainLow noise operation pointHigh linearity operation point

GmsGms

––

3437.5

––

dBIC = 5 mAIC = 13 mA

Transducer GainLow noise operation pointHigh linearity operation point

S21S21

––

2329.5

––

dB ZS = ZL = 50 ΩIC = 5 mAIC = 13 mA

Minimum Noise FigureMinimum noise figureAssociated gain

NFminGass

––

0.428.5

––

dB ZS = ZoptIC = 5 mAIC = 5 mA

Linearity1 dB gain compression point3rd order intercept point

OP1dBOIP3

––

622

––

dBm ZS = ZL = 50 ΩIC = 13 mAIC = 13 mA

IN

OUTBias-T

Bias-TB

(Pin 1)

E C

E

VCTop View

VB

BFP720





GmsGms

––

2932.5

––



S21S21

––

2328.5

––



NFminGass

––

0.428

––



OP1dBOIP3

––

5.521.5

––

dBm ZS = ZL = 50 Ω IC = 13 mAIC = 13 mA



GmsGms

––

26.529.5

––



S21S21

––

22.527.5

––



NFminGass

––

0.426

––



OP1dBOIP3

––

5.521

––


BFP720



Table 5-6 AC Characteristics, VCE = 3 V, f = 1.5 GHzParameter Symbol Values Unit Note / Test Condition


GmsGms

––

2427.5

––



S21S21

––

2225.5

––



NFminGass

––

0.4524

––



OP1dBOIP3

––

621.5

––

dBm ZS =ZL = 50 ΩIC = 13 mAIC = 13 mA



GmsGms

––

2326

––



S21S21

––

21.524.5

––



NFminGass

––

0.4523

––



OP1dBOIP3

––

722

––

dBm ZS =ZL = 50 ΩIC = 13 mAIC = 13 mA

BFP720





GmsGms

––

2225

––



S21S21

––

20.523

––



NFminGass

––

0.521.5

––



OP1dBOIP3

––

622

––




GmsGms

––

20.523.5

––



S21S21

––

18.520

––



NFminGass

––

0.5519

––



OP1dBOIP3

––

7.522.5

––


BFP720



Notes1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 12. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all

measured results



GmsGma –

–1919.5

––



S21S21

––

1516

––



NFminGass

––

0.715

––



OP1dBOIP3

––

8.523

––


Table 5-11 AC Characteristics, VCE = 3 V, f = 10 GHzParameter Symbol Values Unit Note / Test Condition


GmaGma

––

13.515

––



S21S21

––

910

––



NFminGass

––

0.9510.5

––



OP1dBOIP3

––

819.5

––


BFP720



5.4 Characteristic Curves

Figure 5-2 Transition Frequency fT = f (IC, VCE), f = 1 GHz, VCE = Parameter in V

Figure 5-3 Power Gain Gma, Gms, |S21|2 = f (f), VCE = 3 V, IC = 13 mA

0

5

10

15

20

25

30

35

40

45

50

1 10 100

Ic [mA]

fT [G

Hz]

0.5 V

1 V

2 V

3 V

0 1 2 3 4 5 6 7 8 9 106

9

12

15

18

21

24

27

30

33

36

39

42

f [GHz]

G [d

B]

Gms

Gma

|S21

|2

BFP720



Figure 5-4 Input Matching S11 = f (f), VCE = 3 V, IC = 5 mA / 13 mA

Figure 5-5 Output Matching S22 = f (f), VCE = 3 V, IC = 5 mA / 13 mA

0 1.

01

.0

-1

.0

10

.0

10.0

-10.0

5.

0

5.0

-5.0

2.

0

2.0

-2.0

3.

0

3.0

-3.0

4.

0

4.0

-4.0

0.

2

0.2

-0.2

0.

4

0.4

-0.4

0.

6

0.6

-0.6

0.

8

0.8

-0.

8

Swp Max10GHz

Swp Min0GHz

S11 @3V, 5mA

S11 @3V, 13mA

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz

6 GHz

7 GHz

8 GHz

9 GHz

10 GHz

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz

6 GHz

7 GHz8 GHz

9 GHz

10 GHz0 1

.0

1.

0-

1.

0

10

.0

10.0

-10.0

5.

0

5.0

-5.0

2.

0

2.0

-2.0

3.

0

3.0

-3.0

4.

0

4.0

-4.0

0.

2

0.2

-0.2

0.

4

0.4

-0.4

0.

6

0.6

-0.6

0.

8

0.8

-0.

8

Swp Max10GHz

Swp Min0GHz

S11 @3V, 5mA

S11 @3V, 13mA

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz

6 GHz

7 GHz

8 GHz

9 GHz

10 GHz

1 GHz

2 GHz

3 GHz

4 GHz

5 GHz

6 GHz

7 GHz8 GHz

9 GHz

10 GHz0 1

.0

1.

0-

1.

0

10

.0

10.0

-10.0

5.

0

5.0

-5.0

2.

0

2.0

-2.0

3.

0

3.0

-3.0

4.

0

4.0

-4.00

.2

0.2

-0.2

0.

4

0.4

-0.4

0.

6

0.6

-0.6

0.

8

0.

8-

0.8

Swp Max10GHz

Swp Min0GHz

S22 @3V, 5mA

S22 @3V, 13mA

1 GHz

2 GHz3 GHz

4 GHz

5 GHz

6 GHz7 GHz8 GHz

9 GHz

10 GHz

1 GHz2 GHz

3 GHz4 GHz

5 GHz6 GHz7 GHz8 GHz

9 GHz

0 1.

01

.0

-1

.0

10

.0

10.0

-10.0

5.

0

5.0

-5.0

2.

0

2.0

-2.0

3.

0

3.0

-3.0

4.

0

4.0

-4.00

.2

0.2

-0.2

0.

4

0.4

-0.4

0.

6

0.6

-0.6

0.

8

0.

8-

0.8

Swp Max10GHz

Swp Min0GHz

S22 @3V, 5mA

S22 @3V, 13mA

1 GHz

2 GHz3 GHz

4 GHz

5 GHz

6 GHz7 GHz8 GHz

9 GHz

10 GHz

1 GHz2 GHz

3 GHz4 GHz

5 GHz6 GHz7 GHz8 GHz

9 GHz

BFP720



Figure 5-6 Source Impedance Zopt for NFmin = f (f), VCE = 3 V, IC = 5mA / 13 mA

Figure 5-7 Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt

0 1.

01

.0

-1

.0

10

.01

0.0

-10.0

5.

0

5.0

-5.0

2.

0

2.0

-2.0

3.

0

3.0

-3.0

4.

0

4.0

-4.0

0.

2

0.2

-0.2

0.

4

0.4

-0.4

0.

6

0.6

-0.6

0.

80.

8-

0.8

Swp Max10GHz

Swp Min0.45GHz

10GHz

5.5GHz

2.4GHz

1.9GHz

0.45GHz

Δ: Ic = 13mA

: Ic = 5mA

Δ: Ic = 13mA

: Ic = 5mA

1.9GHz2.4GHz

5.5GHz

0 1.

01

.0

-1

.0

10

.01

0.0

-10.0

5.

0

5.0

-5.0

2.

0

2.0

-2.0

3.

0

3.0

-3.0

4.

0

4.0

-4.0

0.

2

0.2

-0.2

0.

4

0.4

-0.4

0.

6

0.6

-0.6

0.

80.

8-

0.8

Swp Max10GHz

Swp Min0.45GHz

10GHz

5.5GHz

2.4GHz

1.9GHz

0.45GHz

Δ: Ic = 13mA

: Ic = 5mA

Δ: Ic = 13mA

: Ic = 5mA

1.9GHz2.4GHz

5.5GHz

0 2 4 6 8 10 12 14 16 18 200

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

1.5

1.6

1.7

1.8

1.9

2

Ic [mA]

F [d

B]

f = 2.4GHz

f = 0.45GHz

f = 10GHz

f = 1.9GHz

f = 5.5GHz

BFP720



Figure 5-8 Noise Figure NFmin = f (f), VCE = 3 V, ZS = Zopt

Figure 5-9 Power Gain Gma, GmS = f (IC), VCE = 3 V, f = Parameter in GHz

0 1 2 3 4 5 6 7 8 9 100

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1

1.1

1.2

1.3

1.4

F [d

B]

f [GHz]

IC = 13mA

IC = 5.0mA

0 5 10 15 20 25 3010

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

42

IC [mA]

G [d

B]

10.00GHz

5.50GHz

3.50GHz

2.40GHz

1.90GHz 1.50GHz

0.90GHz

0.45GHz

0.15GHz

BFP720



Figure 5-10 Power Gain Gma, Gms = f (VCE), IC = 13 mA, f = Parameter in GHz

Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as a guarantee that all devices have identical characteristic curves

0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 56

8

10

12

14

16

18

20

22

24

26

28

30

32

34

36

38

40

VCE

[V]

G [d

B]

10.00GHz

5.50GHz

3.50GHz

2.40GHz 1.90GHz 1.50GHz

0.90GHz

0.45GHz

0.15GHz

BFP720

Simulation Data


6 Simulation Data

For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) pleaserefer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latestversions before actually starting your design.You find the BFP720 SPICE GP model in the internet in MWO- and ADS-format, which you can import into thesecircuit simulation tools very quickly and conveniently. The model already contains the package parasitic and isready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the pinconfiguration of the device.The model parameters have been extracted and verified up to 12 GHz using typical devices. The BFP720 SPICEGP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE GPmodel itself.

BFP720

Package Information SOT343


7 Package Information SOT343

Figure 7-1 Package Outline

Figure 7-2 Package Footprint

Figure 7-3 Marking Description (Marking BFP720: R9s)

Figure 7-4 Tape Dimensions

SOT343-PO V08

1.25

±0.1

0.1 MAX.

2.1±

0.1

0.15 +0.1-0.050.3 +0.1

2 ±0.2±0.10.9

3

2

4

1

A

+0.10.6AM0.2

1.3

-0.05

-0.05

0.15

0.1 M

4x

0.1

0.1

MIN

.0.6

SOT343-FP V08

0.8

1.6

1.15

0.9

XYs56

Date code (YM)2005, June

Type code

Manufacturer

Pin 1

SOT323-TP V02

0.24

2.15

8

2.3

1.1Pin 1

Published by Infineon Technologies AG

w w w . i n f i n e o n . c o m

http://www.infineon.com

Infineon SiGe WiFi WLAN LNA BFP720 Rev. 1UMTS, WLAN,UWB, LNB Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions • High performance general purpose

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