North American Molecular Beam Epitaxy Conference (NAMBE),8-11-2009 Improved Regrowth of Self-Aligned Improved Regrowth of Self Aligned Ohmic Contacts for III-V FETs Mark A. Wistey Now at University of Notre Dame [email protected]A.K. Baraskar, U. Singisetti, G.J. Burek, M.J.W. Rodwell, A.C. Gossard P. McIntyre, B. Shin, E. Kim Stanford University [email protected]M.J.W. Rodwell, A.C. Gossard University of California Santa Barbara Stanford University Funding: SRC
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North American Molecular Beam Epitaxy Conference (NAMBE),8-11-2009
Improved Regrowth of Self-AlignedImproved Regrowth of Self Aligned Ohmic Contacts for III-V FETs
1/R 3 3 S/ ( li it d )• gm << 1/Rs ~ 3.3 mS/μm (source-limited case)
11Wistey, NAMBE 2009
Ohmic contacts no longer limit MOSFET performance.
Conclusions
• Reducing As flux improves filling near gate• Self-aligned regrowth: a roadmap for scalable III-V FETs–Provides III-V’s with a salicide equivalent
I G A d l d I A t t• InGaAs and relaxed InAs regrown contacts–Not limited by source resistance @ 1 mA/µmResults comparable to other III V FETs but now–Results comparable to other III-V FETs... but now scalable