IKA10N60T Data Sheets

7/27/2019 IKA10N60T Data Sheets

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Power Semiconductors 2 Rev. 2 Oct-04

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction case

Rt h J C TO-220 FullPak 5

Diode thermal resistance,

junction case

Rt h J C D TO-220 FullPak 5.8

Thermal resistance,

junction ambient

Rt h J A TO-220 FullPak 80

K/W

Electrical Characteristic, at Tj = 25 C, unless otherwise specified

ValueParameter Symbol Conditions

min. typ. max.Unit

Static CharacteristicCollector-emitter breakdown voltage V( B R ) C E S VG E=0V, IC=0.2mA 600 - -

Collector-emitter saturation voltage VC E ( s a t ) VG E = 15V, IC=10A

Tj=25C

Tj=175C

-

-

1.5

1.8

2.05

Diode forward voltage VF VG E=0V, IF=10A

Tj=25C

Tj=175C

-

-

1.6

1.6

2.05

-

Gate-emitter threshold voltage VG E ( t h ) IC=0.3mA,VCE=VG E 4.1 4.6 5.7

V

Zero gate voltage collector current IC E S VC E=600V ,VG E=0V

Tj=25C

Tj=175C

-

-

-

-

40

1000

A

Gate-emitter leakage current IG E S VC E=0V,VGE =20V - - 100 nA

Transconductance gf s VC E=20V, IC=15A - 6 - S

Integrated gate resistor RG i n t none

Dynamic Characteristic

Input capacitance Ci s s - 551 -

Output capacitance Co s s - 40 -

Reverse transfer capacitance Cr ss

VC E=25V,

VG E=0V,

f=1MHz - 17 -

pF

Gate charge QG ate VC C=480V, IC=10A

VG E=15V

- 62 - nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

LE TO-2 20-3 -31 - 7 - nH

Short circuit collector current1)

IC ( S C ) VG E=15V,tS C5sVC C = 400V,

Tj = 25C

- 100 - A

1)Allowed number of short circuits: 1s.


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Switching Characteristic, Inductive Load, at Tj=25 C


min. typ. max.Unit

IGBT CharacteristicTurn-on delay time td ( o n ) - 12 -

Rise time tr - 8 -

Turn-off delay time td ( o f f ) - 215 -

Fall time tf - 38 -

ns

Turn-on energy Eo n - 0.16 -

Turn-off energy Eo f f - 0.27 -

Total switching energy Et s

Tj=25C, VC C=400V, IC=10A,VG E=0/15V,

RG=23 ,

L2 )

=60nH,

C2 )

=40pFEnergy losses includetail and diodereverse recovery. - 0.43 -

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time tr r - 115 - ns

Diode reverse recovery charge Q r r - 0.38 - CDiode peak reverse recovery current Ir r m - 10 - A

Diode peak rate of fall of reverserecovery current during tb

dir r/dt

Tj=25C,

VR=400V, IF=10A,diF/dt=880A/ s

- 680 - A/s

Switching Characteristic, Inductive Load, at Tj=175 C


min. typ. max.Unit

IGBT Characteristic

Turn-on delay time td ( o n ) - 10 -

Rise time tr - 11 -

Turn-off delay time td ( o f f ) - 233 -

Fall time tf - 63 -

ns

Turn-on energy Eo n - 0.26 -

Turn-off energy Eo f f - 0.35 -

Total switching energy Et s

Tj=175C, VC C=400V, IC=10A,

VG E=0/15V,RG= 23

L1 )

=60nH,

C1 )

=40pFEnergy losses includetail and diodereverse recovery. - 0.61 -

mJ

Anti-Parallel Diode Characteristic

Diode reverse recovery time tr r - 200 - ns

Diode reverse recovery charge Q r r - 0.92 - C

Diode peak reverse recovery current Ir r m - 13 - A

Diode peak rate of fall of reverse

recovery current during tb

dir r/dt

Tj=175C

VR=400V, IF=10A,

diF/dt=880A/ s

- 390 - A/s

2)Leakage inductance Land Stray capacity C due to dynamic test circuit in Figure E.

1)Leakage inductance Land Stray capacity C due to dynamic test circuit in Figure E.


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IC,COLLECTORCURRENT

10Hz 100Hz 1kHz 10kHz 100kHz

0A

5A

10 A

15 A

20 A

25 A

30 AT

C=110CTC=80C

IC,COLLECTORCURRENT

1V 10V 100V 1000V

0,1A

1A

10A

50s

500s

5ms

DC

tp=1s

20s

100ms

f, SWITCHING FREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

Figure 1. Collector current as a function ofswitching frequency

(Tj 175C, D = 0.5, VCE = 400V,

VGE = 0/+15V, RG = 23)

Figure 2. Safe operating area

(D = 0, TC = 25C, Tj175C;VGE=15V)

Ptot,POWERDISSIPATION

25C 50C 75C 100C 125C 150C0W

5W

10 W

15 W

20 W

25 W

30 W

IC,COLLECTORCURRENT

25C 75C 125C0A

2A

4A

6A

8A

10A

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

Figure 3. Power dissipation as a function ofcase temperature

(Tj 175C)

Figure 4. Collector current as a function ofcase temperature

(VGE 15V, Tj 175C)

Ic

Ic


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IC,COLLECTORCURRENT

0V 1V 2V 3V 4V

0A

5A

10 A

15 A

20 A

25 A

30 A

15 V

6V

8V

10 V

12 V

VGE=20V

IC,COLLECTORCURRENT

0V 1V 2V 3V 4V 5V

0A

5A

10 A

15 A

20 A

25 A

30 A

15 V

6V

8V

10 V

12 V

VGE=20V

VCE, COLLECTOR-EMITTER VOLTAGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristic(Tj = 25C)

Figure 6. Typical output characteristic(Tj = 175C)

IC,COLLECTORCURRENT

0V 2V 4V 6V 8V 10V0A

5A

10A

15A

20A

25A

25C

TJ=175C

VCE(sat),

COLLECTOR-EMITTSATURATIONVOLTAGE

-50C 0C 50C 100C 150C0,0V

0,5V

1,0V

1,5V

2,0V

2,5V

3,0V

IC=10A

IC=20A

IC=5 A

VGE, GATE-EMITTERVOLTAGE TJ, JUNCTION TEMPERATURE

Figure 7. Typical transfer characteristic(VCE=20V)

Figure 8. Typical collector-emittersaturation voltage as a function ofjunction temperature(VGE = 15V)


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t,SWITCHINGTIMES

0A 5A 10A 15A 20A

1n s

10ns

100ns

tr

td(on)

tf

td(off)

t,SWITCHINGTIMES

10 20 30 40 50

1n s

10ns

100ns

tr

td(on)

tf

td(off)

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 9. Typical switching times as afunction of collector current(inductive load, TJ=175C,VCE = 400V, VGE = 0/15V, RG = 23,Dynamic test circuit in Figure E)

Figure 10. Typical switching times as afunction of gate resistor(inductive load, TJ = 175C,VCE= 400V, VGE = 0/15V, IC = 10A,Dynamic test circuit in Figure E)

t,SWITCHINGTIMES

25C 50C 75C 100C 125C 150C

1n s

10ns

100ns

tr

td(on)

tf

td(off)

VGE(th),GATE-EMITTTRSHOLDVOLTAGE

-50C 0C 50C 100C 150C0V

1V

2V

3V

4V

5V

6V

7V

min.

typ.max.

TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE

Figure 11. Typical switching times as afunction of junction temperature(inductive load, VCE = 400V,VGE = 0/15V, IC = 10A, RG=23,Dynamic test circuit in Figure E)

Figure 12. Gate-emitter threshold voltage asa function of junction temperature(IC = 0.3mA)


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E,SWITCHINGENERGYLOSSES

0A 5A 10A 15A0,0mJ

0,2mJ

0,4mJ

0,6mJ

0,8mJ

1,0mJE

ts*

Eoff

*) Eon

an d Etsinclude losses

due to diode recovery

Eon

*


10 20 30 40 500,0 mJ

0,2 mJ

0,4 mJ

0,6 mJ

0,8 mJ

Ets*

Eon

*

*) Eon

and Ets

include losses


Eoff

IC, COLLECTOR CURRENT RG, GATE RESISTOR

Figure 13. Typical switching energy lossesas a function of collector current(inductive load, TJ = 175C,VCE = 400V, VGE = 0/15V, RG = 23,Dynamic test circuit in Figure E)

Figure 14. Typical switching energy lossesas a function of gate resistor(inductive load, TJ = 175C,VCE = 400V, VGE = 0/15V, IC = 10A,Dynamic test circuit in Figure E)


50C 100C 150C0,0mJ

0,1mJ

0,2mJ

0,3mJ

0,4mJ

0,5mJ

0,6mJ

Ets*

Eon

*

*) Eon

and Ets

include losses


Eoff


300V 350V 400V 450V 500V 550V0,0mJ

0,2mJ

0,4mJ

0,6mJ

0,8mJ

Ets*

Eon

*

*) Eon

an d Ets

include losses


Eoff

TJ, JUNCTION TEMPERATURE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 15. Typical switching energy lossesas a function of junctiontemperature(inductive load, VCE = 400V,VGE = 0/15V, IC = 10A, RG = 23,Dynamic test circuit in Figure E)

Figure 16. Typical switching energy lossesas a function of collector emittervoltage(inductive load, TJ = 175C,VGE = 0/15V, IC = 10A, RG = 23,Dynamic test circuit in Figure E)


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VGE,GATE-EMITTERVOLTAGE

0nC 20nC 40nC 60nC0V

5V

10 V

15 V

480V120V

c,CAPACITANCE

0V 10V 20V

10pF

100pF

1nF

Crss

Coss

Ciss

QGE, GATE CHARGE VCE, COLLECTOR-EMITTER VOLTAGE

Figure 17. Typical gate charge(IC=10 A)

Figure 18. Typical capacitance as a functionof collector-emitter voltage(VGE=0V, f= 1 MHz)

IC(sc),shortcircuitCOLLECTORCURREN

T

12V 14V 16V 18V0A

25A

50A

75A

100A

125A

150A

tSC,SHORTCIRCUITWITHSTANDTIME

10V 11V 12V 13V 14V0 s

2 s

4 s

6 s

8 s

10s

12s

VGE, GATE-EMITTETR VOLTAGE VGE, GATE-EMITETR VOLTAGE

Figure 19. Typical short circuit collectorcurrent as a function of gate-emitter voltage

(VCE 400V, Tj 150C)

Figure 20. Short circuit withstand time as afunction of gate-emitter voltage(VCE=600V, start at TJ=25C,TJmax


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ZthJC,TRANSIENTTHERMALRESISTANCE

10s 100s 1ms 10ms100ms 1s 10s

-2K/W

-1K/W

00K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

ZthJC,TRANSIENTTHERMALRESISTANCE

10s 100s 1ms 10ms100ms 1s 10s10 -2K/W

10-1

K/W

100K/W

single pulse

0.01

0.02

0.05

0.1

0.2

D=0.5

tP, PULSE WIDTH tP, PULSE WIDTH

Figure 21. IGBT transient thermal resistance(D = tp/ T)

Figure 22. Diode transient thermalimpedance as a function of pulsewidth(D=tP/T)

trr,

REVERSERECOVERYTIME

200A/s 400A/s 600A/s 800A/s0ns

50ns

100ns

150ns

200ns

250ns

300ns

TJ=25C

TJ=175C

Qrr,REVERSERECOVERYCHARGE

200A/s 400A/s 600A/s 800A/s0,0C

0,1C

0,2C

0,3C

0,4C

0,5C

0,6C

0,7C

0,8C

TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery time asa function of diode current slope(VR=400V, IF=10A,Dynamic test circuit in Figure E)

Figure 24. Typical reverse recovery chargeas a function of diode currentslope(VR = 400V, IF = 10A,Dynamic test circuit in Figure E)

R, ( K / W ) , ( s )

1.596 4.622 6

1.985 1.288

0.5623 5.066*10-2

0.3324 4.152*10-3

0.3531 6.059*10-4

0.1730 7.863*10-5

C1=1 /R1

R1 R2

C2=2 /R2

R, ( K / W ) , ( s )

1.418 5.068 6

2.125 1.416

0.5890 6.455*10-2

0.5424 5.732*10-3

0.6311 1.019*10-3

0.5061 1.499*10-4

C1=1 /R1

R1 R2

C2=2/R2


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Irr,

REVERSERECOVERYCURRENT

200A/s 400A/s 600A/s 800A/s0A

2A

4A

6A

8A

10 A

12 A

14 A

TJ=25C

TJ=175C

dirr/

dt,DIODEPEAKRATEOFFALL

OFREVERSERECOVERYCURRENT

400A/s 600A/s 800A/s0A/s

-100A/s

-200A/s

-300A/s

-400A/s

-500A/s

-600A/s

-700A/s TJ=25C

TJ=175C

diF/dt, DIODE CURRENT SLOPE diF/dt, DIODE CURRENT SLOPE

Figure 25. Typical reverse recovery currentas a function of diode currentslope(VR = 400V, IF = 10A,Dynamic test circuit in Figure E)

Figure 26. Typical diode peak rate of fall ofreverse recovery current as afunction of diode current slope(VR=400V, IF=10A,Dynamic test circuit in Figure E)

IF,FORWARDCURRENT

0V 1V 2V0A

10 A

20 A

30 A

175C

TJ=25C

VF,FORWARDVOLTAGE

-50C 0C 50C 100C 150C0,0V

0,5V

1,0V

1,5V

2,0V

10 A

IF=20A

5A

VF, FORWARD VOLTAGE TJ, JUNCTION TEMPERATURE

Figure 27. Typical diode forward current asa function of forward voltage

Figure 28. Typical diode forward voltage as afunction of junction temperature


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P-TO220-3-31

dimensions

symbol [mm] [inch]

min max min maxA 10.37 10.63 0.4084 0.4184

B 15.86 16.12 0.6245 0.6345

C 0.65 0.78 0.0256 0.0306

D 2.95 typ. 0.1160 typ.

E 3.15 3.25 0.124 0.128

F 6.05 6.56 0.2384 0.2584

G 13.47 13.73 0.5304 0.5404

H 3.18 3.43 0.125 0.135

K 0.45 0.63 0.0177 0.0247

L 1.23 1.36 0.0484 0.0534

M 2.54 typ. 0.100 typ.

N 4.57 4.83 0.1800 0.1900

P 2.57 2.83 0.1013 0.1113

T 2.51 2.62 0.0990 0.1030

Please refer to mounting instructions (application note AN-TO220-3-31-01)


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Figure A. Definition of switching times

Figure B. Definition of switching losses

Ir r m

90% Ir r m

10% Ir r m

di /dt F

tr r

IF

i,v

tQS

QF

tS

tF

VR

di /dt r r

Q =Q Qr r S F

+

t =t t r r S F

+

Figure C. Definition of diodesswitching characteristics

p(t)1 2 n

T (t)j

1

1

2

2

n

n

TC

r r

r

r

rr

Figure D. Thermal equivalentcircuit

Figure E. Dynamic test circuit

Leakage inductance L =60nHand Stray capacity C =40pF.


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St.-Martin-Strasse 53,D-81541 Mnchen Infineon Technologies AG 2004All Rights Reserved.

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IKA10N60T Data Sheets

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