IKA06N60T ^ TrenchStop series Power Semiconductors 1 Rev. 2 Oct-04 Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • Very low V CE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5µs • Designed for : - Variable Speed Drive for washing machines, airconditioners and induction cooking - Uninterrupted Power Supply • Trench and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior- very high switching speed - low V CE(sat) • Low EMI • Very soft, fast recovery anti-parallel EmC on HE diode • Complete product spectrum and PSpice Models :http://www.infineon.com/igbt/ Type VCE IC;Tc=100°C VCE(sat ),Tj=25°CTj,max Marking CodePackage Ordering Code IKA06N60T 600V 6A 1.5V 175°C K06T60 TO-220-FP Q67040S4678 Maximum Ratings Parameter Symbol Value Unit Collector-emi tter voltage VC E 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 12 6 Pulsed collector current, tp limited by Tjmax ICpuls 18 Turn off safe operating area VCE ≤ 600V, Tj ≤ 175°C - 18 Diode forward current, limited by Tjmax TC = 25°C TC = 100°C IF 12 6 Diode pulsed current, tp limited by Tjmax IFpuls 18 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 1) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tS C 5 µs Power dissipation TC = 25°C Pt o t 28 W Operating junction temperature Tj -40...+175 Storage temperature Ts t g -55...+175 °C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-220-3-31 (TO-220 FullPak)
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Low Loss DuoPack : IGBT in Trench and Fieldstop technologywith soft, fast recovery anti-parallel EmCon HE diode
• Very low VCE(sat) 1.5 V (typ.)
• Maximum Junction Temperature 175 °C
• Short circuit withstand time – 5µs
• Designed for :- Variable Speed Drive for washing machines, air
conditioners and induction cooking- Uninterrupted Power Supply
• Trench and Fieldstop technology for 600 V applications offers :- very tight parameter distribution- high ruggedness, temperature stable behavior - very high switching speed- low VCE(sat)
• Low EMI
• Very soft, fast recovery anti-parallel EmCon HE diode• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type V CE I C;Tc=100°C V CE(sat ),Tj=25°C T j,max Marking Code Package Ordering Code
Figure 9. Typical switching times as afunction of collector current(inductive load, T J=175°C,V CE = 400V, VGE = 0/15V, R G = 23Ω,Dynamic test circuit in Figure E)
Figure 10. Typical switching times as afunction of gate resistor (inductive load, T J=175°C,V CE = 400V, VGE = 0/15V, I C = 6A,Dynamic test circuit in Figure E)
t , S W I T C H I N G T I M E S
50°C 100°C 150°C1n s
10ns
100ns
t r
t f
t d(on)
t d(off)
V G E ( t h ) , G A T E - E M I T T T R S H O L D V O L T A G E
-50°C 0°C 50°C 100°C 150°C0V
1V
2V
3V
4V
5V
6V
min.
typ.
max.
T J, JUNCTION TEMPERATURE T J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as afunction of junction temperature(inductive load, V CE = 400V,VGE = 0/15V, I C = 6A, R G = 23Ω,Dynamic test circuit in Figure E)
Figure 12. Gate-emitter threshold voltage asa function of junction temperature (I C = 0.18mA)
Figure 13. Typical switching energy lossesas a function of collector current(inductive load, T J=175°C,V CE=400V, VGE=0/15V, R G=23Ω,Dynamic test circuit in Figure E)
Figure 14. Typical switching energy lossesas a function of gate resistor (inductive load, T J=175°C,V CE = 400V, VGE = 0/15V, I C = 6A,Dynamic test circuit in Figure E)
E , S W I T C H I N G E N E R G Y L O S S E S
50°C 100°C 150°C0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
E ts*
E on
*
*) E on
and E ts
include losses
due to diode recovery
E off
E , S W I T C H I N G E N E R G Y L O S S E S
200V 300V 400V 500V0,0mJ
0,1mJ
0,2mJ
0,3mJ
0,4mJ
0,5mJ
E ts*
E on
*
*) E on
an d E ts
include losses
due to diode recovery
E off
T J, JUNCTION TEMPERATURE V CE , COLLECTOR-EMITTER VOLTAGE
Figure 15. Typical switching energy lossesas a function of junctiontemperature(inductive load, V CE=400V,VGE = 0/15V, I C = 6A, R G = 23Ω,Dynamic test circuit in Figure E)
Figure 16. Typical switching energy lossesas a function of collector emitter voltage(inductive load, T J = 175°C,VGE = 0/15V, I C = 6A, R G = 23Ω,Dynamic test circuit in Figure E)
di F /dt , DIODE CURRENT SLOPE di F /dt , DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery currentas a function of diode currentslope(V R = 400V, I F = 6A,Dynamic test circuit in Figure E)
Figure 26. Typical diode peak rate of fall of reverse recovery current as afunction of diode current slope(V R = 400V, I F = 6A,Dynamic test circuit in Figure E)
I F , F O R W A R D C U R R E N T
0,0V 0,5V 1,0V 1,5V 2,0V0A
2A
4A
6A
8A
10 A
25°C
T J =175°C V
F , F O R W A R D V O L T A G E
0°C 50°C 100°C 150°C0,0V
0,5V
1,0V
1,5V
2,0V
6A
I F =12A
3A
V F, FORWARD VOLTAGE T J, JUNCTION TEMPERATURE
Figure 27. Typical diode forward current asa function of forward voltage
Figure 28. Typical diode forward voltage as afunction of junction temperature
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