IES Electronics Paper I 2013

8/12/2019 IES Electronics Paper I 2013

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I .The coord inationnum ber andtheatom ic packin g factor fo r He.xagonal C lo sePacked(H C P) and Face-Centr ed CubicCrystal Structure are respecti vely(a) 8 and 074

b) 12 and068c) 8 and 068d) 12 and 0 74

2.Theresi sti vity ofm ateria l is a functi onof tem peraturebecausea) electr on densi ty varie s with tem

pera ture(b) electro n gas density varie s with

te m peratu rec) am plit ude of vib ra ti on of atom

var ie s with tem peratu re(d) Allof the above

3. M edium doping in Silic onandG erm anium corresponds to im purity of thorderofa) I partin 106

{b I part in lOS{c I part in 10d) I partin108

4 A n ele ctr ic field is applie d to a se mi-

(a) both and v will increase(b) w ill increase but ,, wil l decreasec) vwill increasebut wil l decrease

(d) both and v will dec rease

5 In a pie zoelectric cryst al oscil la tor, ifxrepresents th e m ss of th crysta l, then th oscill ati on or tuning frequency isli nearly proportio nal toa) th massof the crystalb) th e square root ofth e of the

crystalc) the square of th e m ass of the

cry st al{d) th inverse of the square root of

th mass of th e crystal

6. The tem perature aboveanti fcrrom agnetic m ate ria lparam agneti c iscalle d(a) Neel tem perature(b) Peak tem peratu re(c) Critical tem peratu re(d ) W eis stem peratu re

whic h anbecom es

7.Therelati ve perm eability is lessth anI ina) fe rrom agnetic materials

(b) dia m agnetic materialsconduc tor. Let the num ber of charge c) param agnetic m ate rials carri er be and the average dri ft speedbev. If thetem perature is increased th en d) fe rr ite s

FRFMDS A

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8. Which one of the following quan ti tiescan be measured with the he lp ofthepiezoelectr ic crysta l ?a) Acceleration(b) Aowc) Tempera tu re d) Veloeity

9.As per Curi e-Weiss law , the m agnetic su sc eptibi lityofamaterial varie sasa) T -2(b ) l ic)d) T 2

10. Ferrite s havea) lowcopper los s(b) loweddycu rrent loss c) lowresistiv ityd) hig her sp ecif ic gravity than th atof

the iron

11 Two lamps each of230 V a nd 60 Wrating are connected in series across asingle phas e 230 V supply. The totalpower consumed by th e t'o lampswouldbe(a) 120Wb) 60wc) 30Wd ) 15 w

3

12. Two charges are placed at a smalldis tance apart. If ag lass slab is placedbe tween them . the force between thecharges willa) notchangeb) increasec) ed ) reduceto zero

13.The total cap acitanceoftwocapacito rs is25Fwhen connecte d in par a lle l and4 F when connected in se ri es. Theindi vidual c apac itan ces of the twocapaci to rs are(a) I Fand 24Fb) 3Fand 2 1Fc) 5Fand2Fd ) 10F and 15 F

14 Aco il havingan inducta nceof 4Handaresistance of 2 isconnectedacro ss a20V desource. The steady-sta tec urrentin amperes) through the coil is(a) 5b) 3-3c ) 10d) 6 6

15 An ele clricmo to ris develop ing I0 kWat a speed o f 9 rpm . T he torqueavai lab le at the shaft isa) 106 Nmb) 66N-mc) 1600 N -md) 90N-m

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16 A heavily doped sem iconducto r basa) a re sistivity which dec reases

xp nential l y with tem peratureb ) a resist iv ity which ris es a lm ost

linearly with temperatu re c) a neg ative tem pe ra ture coeff ic ie nt

of re si stanced) a positi ve tem pera ture coefficie nt

of re si st anc e

17 A Zener diode has the fo llow ingproperti es :

I . It is properly doped cry sta l d iodew ith sharp bre akdown

2. It isrevers e biased3. Its fo rward characte ristics are jus t

that of ord in ary dio de

4. Its re vers e chara cte ristics are lil eord inary diodea) I, 2, 3and4b) I , 2 and4 onlyc) I , 2and3 only

d) 3and4 only

18 Atunnel dio deis n pn junction in w hicha) n -region is degene rate lydopedb) p-region isdegenerately doped

BFRFMDSA A

c) ei ther or p-regio nisdegenera te lydoped

d) both n and p-r egions are degenera te ly doped

19 W hich is the diode used for m easurin glig ht in tens ity?

20.

a) J unction dio de

b ) Vara cto rdio de

c) Tunne l diode

d ) Photo dio de

IOV3kJ2

IO OkO

The tra ns-c onductance m of thetra nsisto r used in the Eampli fier shown inthe above circuit , operating at roomte mpera tu re is

a) 92mAJV

b) 46 mAIV

c) 184mA/V

d) 25mA/V

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. W hich of the fo llo wingareessentia ls ofa transistor biasi ngcir cuit ?

I . Proper zero signalcoll ectorc urren tflo w

2 .V eshould not fall belo w 0 5 VforG erm an ium andI Vfor Sili con

3 .Ensure slabil izati on of operatingpoin t

4 . Loal ii ng to th e so urc e(a) 1, 2an d 3ontr(b ) I, 2 and 4only(c ) 3 and4 only d) I, 2 , 3and4

l l When a tr ansis to rissatu ra te d,(a) theemiu er pote n tial is morethan

th e base-colle ctor pote ntial(b ) thecollectorpote ntial is m orethan

the base-em it terpotentia l(c) thebasepotenti al is more than the

em itter-c oll ector pote ntia ld) the base, emi tt er and coll ector are

almost the samepotenti al

l . If the a value ofa transisto r changes05% from its nom in al valu e of 09 , theperc en1age change in J willbe(a ) 0%(b)25(c) . 5%(d) 75%

l . If annpnsili con transistor isoperateda tVc= V and l c =100 J.lA and has acurre nt ga inof1 in th e Econnection. th enth e input resistanceof th iscircuit w ill be

(a ) 250 n(b )25 k lc) 250 kn

(d ) 2 500 k.Q

25 In a bipolar junction transistor anin cre ase in m agnitude of collectorvolt ageincreases the space-chargewid thatth eoutputjunction diode. T h is causesth e eff ectiv ebase wid th to decrease .T his effe ct iskn ow nas(a) Hall e ffect(b ) Early effe ct(c )M iller effe ct(d ) Z ener effe ct

l6. Which typeof pro te cti onisprovidedforSCR by co nnec tingthesnubber c irc uitacross it?

) v .a prote cbont

(b ) i .- prote ctio ndt

(c ) Over-volta geprote c t ion(d )Over-curre nt pro te ctio n

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27. A capacito r of 100 J l F is charged toI0 V th rough a resistanceof I0kll Itwould be fully charged ina ) 5 secb) 01 secc) 10 secd) 05 sec

28. Most of the linear ICs are based ontwo-transis tor differentia l amplifiersbecause ofa) in put voltage-dependent linea r

tr ansfer characteri sticb) high volt age gainc) high input re sistanced) hig h CMRR

29 . W hen the photo resist coating during lCfa brication) is exposed to ultrav io let lightthe photo resis t becom esa) oxidizedb) io niz edc) poly merizedd) brittle

30. Fora sheet w it h re sistivity p width wlength and th ickness y the resista nceper square sheet resistance) R5 is

a)

b) pyc) Py

d) p/y

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31. An optica l fibrehas refracti ve in dexcorea} hig h an d low refractive in dex

claddingb) low and high refractiv e index

claddingc) uniform surrounded by varia ble

index c laddingd) variable wit h refracti ve in dex

in creasesfrom lo w at the cen tretohigh at the junct ion with c ladding

32. The wavelength beyond whic h phOtoelectric em ission cannot t ke place isca lled

33.

a ) long wavelengthb) optical w avelengthc) photoelectric wavelengthd) cr itical wavelength

lOV680.12

Rdiat,-d light

The L ightEm itting D iode LED). show nin the above figure has avoltuge drop of2V. Thecurren t fl owing throughLED isa) 11 8 rnAb) 00147 mAc) 2941 mAd) 0 0176 rnA

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34. If a continuous time signal x t) can takeon any value in the continuous interval

- ~ . co), it is called(a) Deterministic signal(b) Random signal(c) Analog signal(d) Digital signal

35. The value of the integralI = f(sr2 +1}ii (r)dt is(a) 0(b)(c) ~d) t25T

36. A continuous time syst.em will be BIBOstable if all the Eigen values are(a) one(b) distinct and their real parts negative(c) negative(d) zero

a) JIb) J3I(c) ../2

(d) J3

7

38. The forced response yF n) of the differential equationy - 6y n l) = (04) , n 0y -1) = O

(a) 9(06Y(b) - 2(04)c) 9(04)

39. The ramp function can be obtained fromthe unit impulse at r=0 by(a) differentiating unit impulse func

tion onceb) differentiating unit impulse func

tion twice(c) integrating unit impulse function

once

(d) integrating unit impulse functiontwice

40. Homogeneous solution ofy(n) - fc;y(n-2) =x(n - 1) is

(a) c.{t) + {-1)

dl c1(-t)A - B-FRF-M-DSA

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41 A source of power/energy) feeds theinput port of an amplifier and the outputport is connected to a load . The inputimpedance of the ideal amplifier shouldideally be

42

a) zerob) coc) lowd) high

r n)

-4 -3 -2 -I 0 I 2 J 4

The signal x n) shown in the abovefigure is aa) periodic.discrete time signalb) periodic signalc) non-period ic signald) periodic discrete time signal con

sisting of 3 non-zero samples

43. Which of the following Derichletsconditions are correct for convergence ofFourier transform of the function .t t) ?

8 RFMOSA - A 8

I. x t) is square integrable2. x t) must be periodic3. x t) should have finite number of

maxima and minima within anyfinite interval

4. x t) should have finite number ofdiscontinuities within any finiteinterval

a) I, 2 3 and 4b) I , 2 and 4 onlyc) I, 3 and 4 onlyd) 2. 3 and 4 only.

44 If f(t) is a real and odd function, then itsFourier transform F J)) will bea) real and even function of J)b) real and odd function of wc) imaginary and odd function of wd) imaginary function of J)

45. For certain sequences which are neitherabsolutely summable nor square summabie, it is possible to have a FourierTransform Ff) representation if wea) take shon lim FTb) evaluate f only the real part of the

sequencec) allow DTFT to contain impulsesd) eva luate f over a limited time

span

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46. A unit impulse function 8 1) is detinedby

1. 8 1) =0 f01 all t except t =02. [ ~ c r ) d t =

The Fourier transform F w) of 8 1) isa) 1b) ... ..I)c) 0d) ~

47. The convolution x n) t n - nQ is equaltoa) x n nob) x n+no)c) x n0)d) x n)

48. If the z-transform of. z Sz - 7) hex n) 1sx z)= 2 , t n the

lim x n) isa) Ib) 2c) ood) 0

4z -7z+3

49. The final value theorem isa) lim x k) = lim z -ox z )k-+oo z-+ Ib) lim x k) = lim x z)

~ o o z-+1c) lim x k) = lim z- 1)x z)

k -+ oo z- od) lim x k) = lim - 1)- 1x z- 1)

lt. -+ 00 ~

9

SO. For the discrete signal x{11)=a u[n] thez-transform is

za) z ab)

z-a

c) zaz

zd) z-a

51. I f the power spectral density is ~ ; ; : and the auto correlation function isdefined by

The integral on the right represents theFourier transform ofa) Delta functionb) Step functionc) Ramp functiond) Sinusoidal function

5.2. A battery is connected to a resistancecausing a current of 05 A in the circuit.The cu.rrent drops to 04 A when anadditional resistance of Q is connectedin series. The current will drop to 02 Awhen the resistance is further increasedbya) 10 f2b) 15 [2C) 25 f2d) 40 [2

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53.

54.

21- - JW v - --

I = 0 :\ IJ'For the netw ork s how above. thecurrent ir) is

a) 2e-2(z- l) u ( t-3 )

(b) 0 -2 - 3 ur)

c) 2e-


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51 Considerthe following data:I. Input appl ied for 1 < 102. Input applied for 1 l : 103. State ofth e networkat 1 = 04 . State of th e network at 1< 10

W hich of these are nee e for determ ining the response of a linear networkfo r 1 < 10 ?(a) I, 3 a nd 4(b ) 2. 3 and 4(c) 2 and 3 on ly d) 2 an d 4 only

58 I f a capacitor is energized by asymmetrical square wa vecurren t source,then the steady-state voltage across thecapacitor wil l be a

59

(a) square wave(b) triangular wave(c ) step function(d) impulse function

j j8 110 1

The power absorbed by th e networkexcited by a 50 LO sinusoidalsource is168 W The value ofthe mutual induerive reactance jXM shou ld bea) 13 n(b) 1 n(c) 63 n(d) 3 n

60

61

I

20VR

The circuit show n above L 2 H andR 4. 2) is sw itched across a D .C.power supply of 20 V. The current atlime 1= I sec is(a) 5 A (b ) 4 3 2Ac) 2 A

(d) 05 A

3For th oriented graph as given above,tak ing 4, 5 6 as tree branches th e tie setm atrix is(a)

- ~ ~ - ~0 0 1

~ ic) i

~ n0 0 II 0 0

0 1 1- 1 0 1

0 0 0 -10 I 0

0 0 1 0- 1 0 0 0

0 0 0

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62. The number of branches in a network isb the number of node is n and numberof dependent loop is /. The number ofindependent current equations will be(a) I I(b) b Ic) b nd) - 1

63. Two two-pon networks are connected incascade. The combination is to be represented as a single rwo-pon network. Theparameters are obtained by multiplyingthe individual

64.

a) h-parameter matrix(b) ABCD parameter matrix(c) Y-parameter matrix(d) Z-parameter matrix

10{} IH

. co.1 1 E[___ __ J RIn the above circuit. the value of the loadresistance R to absorb th.e maximumpower is(a) 1414 nb) 1 nc) 200 n

(d) 2828 n8 -FRF-M -DSA A 12

65. Q5 0 10{2

)

jlO{l

R

In the deha equivalent of the abovestar connected circuit. Z R is equal to (a) 40 Q(b) (20 + lO) Q

(d) oo + j30) n66. In the following statements, choose the

correct combination(s) :J. If z = 22and 11 I the network is symmetric2. f = 12 the network is sym-metric3. If h 2= - h21 the network is reciprocal4. fA2 BC=0 the network is reci procal

a) I and 3(b) 3 and 4(c) I and 4(d) 2 and 3

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67. T he transmissi on para m eters in in verse 69 .hyb rid g)par.u nete r form are expressedin te rm s of thea ) cu rre nt ofinput por t I and vohage

ofth e o utput port 2 andwhich are expressed in te rm s of the in putvoltage an d outp ut curr ent

b ) input vo ltage and c urrent of theinput portI an d w hichare expre ssedin te rm softh e output vohage an dcurren toftheoutp u t port2

c) in put volt age andoutput curr ents ofport 1 and port 2 respecti vely andwhic h are expressedin tenus ofthein put currentand


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7 1. For a driv ing po int fullCtion, with11 =degree of num erator po lyno mial andm= egreeofdenom in ato r polynomial.th erela tionship connecting nandm is

72 .

a) 11 - :s; Ib) ln-mj=Oc) m) < - Id) m> I

1 1)

R s

After closingth e sw itch S at t =0, thecurr ent i t) atany instant 1 in theabovenetw ork isa) 10 +JOe1 1b) 10 - J k iOOtc) 10 +lOe-1 1d) 1 lOe-1001

73. If Z s) s3+10s2+25s+l8 . i t iss+1Xs+3)s+5)a) an RCdriv ing-poin l im pedanceb) anRL driv in g-poin tim pedancec) an LC driv ing -p oin t impedan cild) Noneofthe above

8-FRF-M -DS A 4

74 . I

7 .


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76 . he ratio of the charges stored by twom e t ~ l l i spheres ra ised to the samepotential is 6 . The ratio of the surface~ e ofthe sp here isa) 6

b) ic) 36

Id) ./6

77. The field strength of a plane w ave is2 V /m . The strength of the magneticfie ld H) in free space isa) 52 m imb) 225 mAim

{c) 250m imd) 52 mAim

78. A coil ofinductance2 H and resistance1 Q is connected to a 1 V batterywith negligible im emal res is tance. T heamount of energy stored in the magneticfield isa) 8 Jb) 5 Jc) 25d) 1 J

79. Electric di s placement current density Dat any point on a spherical su rface ofradius r centred at the isolated c h ~ g e qIS

15

?a} q-?b) qz

c ) q4nr2

d) q4n2,2

80. Consider a uniform sphere of chargedensity Po and radius b centred at theorigin . The electric field at a radialdistance r r b), according to Gauss slaw, is

a) Y o3e

d) Porwhere E is the permittivit y.

81 At a poin t x y z) potential is givenbyA xl + y + zl . The potential d ifferencebetween points P l. 0. 2) and Q l , I, 2)isa) 8 Vb) 8 AVc) 9 A Vd) 9v

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82. The in trinsic impedance of a conducting m edium for whicha =58 Mslm JJ , = I ata frequency of 100 MHz is

b> 184 xw 3L45 ac) 369 xI0-3 L 45 .Qd) 369xw-3L - 45 2

83 A conducting p lane at z=0 has avoltage of100V on it. V 1andv2 aretwo solutions, with V1= z 100andV2 =I00: which satisfy Laplace qu tio n as well asthe boundary conditionV =00 at z=0. W hich of thefollowingis the m ost correct option ?

a) B oth V1 and V2 are correct andsolution is no t uni que

b) U niq ue solution cannot befo und

c) Only Vt is the correct solution

d) The givenplane does not serve as aproper boundary sth erefe renceisnot given

84 IfE=Emsin (w 2 0, is fr ee space.th en 8 is given by

FRFM DSA- A 16

) E./3 .{ )-c -c;;--Sin ro t- f l ad) EmfJW C O S rot- , 2 a

85. Aunifonn .planewave with an intensityof electr ic field IVmis travelling infree sp ace. T he m agnitude ofassociatedm agnetic field isa) 26 5 mimb) 2-65 Aimc) 265 JJA/md) 26 5 im

86. Areflectorneterconsists ofa) tw o directional couplersb) one directional coupler

isolatorc) one directional couple r

circ u latord) tw o directional couplers

circulator

and an

and a

and a

87 Atransmission line, has a charac te risticim pedance Zo>of 600 n l ls le ngth is500m lf the line is cui into ha l fw hatwill be the Zofor eachhal f?a) Zo4

b) Zo2c) Z0d) 2Zo

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88 A pla in w ave is tra vellingin the posit ive X-d irection in a lo ss less unboundedm edium ha vingperm eabil ity th e sam easthe free space and a permittivity 9 tim estha t ofthe frees pa ce. thephase veloci tyof th e wave wi be(a) x lOS m/ s(b )108 m/s

(d ) f5 x10 8 m/s

89 ln a sem iconducorstr ain gauge, thechange in resistance onapplication ofstra in is main ly due to change in

(a ) length of th e wir e(b ) dia m eter of he w irec) resi sti vity of the mate ria l of th e

wire (d) both the leng1handdia m eterofthe

wire

90. In an LVDT. he tw osecondary win din gsare connec1edin diff ere ntia l m ode toobtain(a) hig her ou put volta ge

(b) a red ucti on ino utp ut impedance

c) an inc rease in inputim pedance(d) the nul l for parti cular position of

core

17

9 1 For an ante nna. Radiation Intensity isdefi ned as(a ) th e time-averaged radiate d pow er

per unit solid angle(b ) th e peak radia1ed pow er pe r unit

soli d angle(c ) be peak rad ia ted pow er perunit

aread) th e time-averaged radia ted pow er

per unit are a

92. There si sta nces oftwo coi ls ofa w attm eter are00 2 and 100 2 re spectiv elyand both are non-in ducti ve. The curre ntth ro ugh aresi sta nce loadis 20Aandthevoltage acro ss it is 30V. Inoneof thetw oways ofconnecti ngthe vo lt agecoil,th e e rror in th ereadin g would be(a ) 0 1% to o hig h(b) 02%toohigh(c ) 0 15% to o high(d ) zero

93. A0-150 V voltm eter has a guara n te edacc uracy of1% full -scale re ading . Thevo ltage measured by thi s instr um ent is83 V. Thelimit in g error in per cent is(a) 181% (b) 018(c) 553%(d) 0553%

A 8 FRFM SA

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94 The strain gauge should haveI. High gauge factor2. Low resistance temperature coeffi

cient3. High resistance

Which of the' above statements arecorrect ?(a) I and 2 only(b) I and 3 only(c) 2 and 3 only(d) 1. 2 and 3

95 The secondary of a CT is never leftopen-circuited becauseI. The heat dissipation in the core will

be very large2. The core will be saturated and getpermanently magnetized rendering

it useless3. Dangerously high emf will be

induced in the secondaryWhich of the above statements arecorrect?(a) I and 2 only(b) 1 and 3 onlyc) I. 2 and 3

(d) 2 and 3 onlyFRFM DSA A 8

96. A resistance strain gauge with gaugefactor of 3 is subjected to a stress of3000 kg/em when fastened to a steelrod . The modulus of elasticity of steelis :i t x 106 kg/cm2 The percentagechange in resistance of the strain gaugeelement is(a) 01428(b) 2484(c) 04284d) 43

97. Two 100 V F.S.D. PMMC type de voltmeters having figure of merit of1 kQ/V and 2 kQ/V are connectedin series. The series combination can beused to measure a maximum de voltageof(a) 200 V(b) 175 v(c) 150 v(d) 125 v

98. The true rms responding voltmetersenses(a) the nns value divided by theaverage value of voltageb) the square of the nns value of

voltagec) the actual rrns value of voltage

(d) the rrns value divided by the peakvalue of voltage

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99 . A 4 d igit voltmeter is used form easurem ents. It w ould display thevoltagevalu e 0 386 1on a 10V range asa) 03861b) 0386c) 038d) 0 38610

100. W hat is the dynam ic rangeof a spectrumanalyzer w ith a third order interruptpoint of + 25 dB m. and a noise level of-) 85 d B m .a) 073 dBb) 7 3 dBc) 73 dBd) 7 3 0 dB

101. The bandwidth of a digitally recordedsignal prim arily depends upona) the physical properties of the

system com ponents processing thesignal

b) the frequency at which the signal is sam pled

c) the frequency of the clo ck signalthat is usedto encode binary valuesresponding the signal

d) the f requency of the noise affectingsignal quality

102. A 10-bit ID converter is used todigitize an analog signal in the 0-5 Vrange. The mll) imum pea k-to -peakripple voltagethat ca nbeallowed inth ede supp ly voltage is nearlya) 1 m Vb ) 50 mVc) 25 m Vd) m V

9

103. The wire in a m etallic strain gauge is0J m lo ng and has an initial resistanceof 120 ohm. O n a pplication of anexternal force, the wire length increasesby 01 mm and the resistance increasesby 021 ohm. The gauge factor of thestra in gauge will bea) 3.00b) 2.00c) 175d ) 285

104. n LVDT has the fo llowing speCifications:I nput =6 3 V,O utput =52 V,range 1 25 em.T h e n the output voltages produceddue toco re movemen t from +I I em to- 0 4em will be respectivelya) +4 576 V an d-1664 Vb) +2288 V and - 0 832 Vc) + 40 V and -10 Vd) +20 V and -10 V

105. A temperature sensit ive rransducer issubjected to a sudden temperaturechange. It takes I0 sec for the transducerro reach sready-srare. Thet ime taken bythe transducer to read half of th ete m peratu re difference will be nearlya) I 38 secb) 5 .) ) secc) 862 secd) 10 sec

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106 . A I m le n gth wire has a resistance ofISO Q W hen it is subjected to st rain , itslength be com es 10 I m. The measure ment is co nducted by a str ain gauge whose gau ge factor is 2. he c hange inresistance ofthe wire is(a ) 05(b) 10 Qc) 2 0 Q

(d) 3 0

107. W hile m easu ring the voltage developedby a therm ocouple, i t is found th at thereis always an offset vol tage. T h is is dueto(a) a voltage across a therm ocouple

even at very lo w tem perature(b) so m e photoelectric voltage across

th e junct ion due to am bient light(c) a barrier potential a c r o the

junction(d) an additional t herm ocouple is

form ed due to th e connecting wires and one of th e m etals8 A n LV DT (l inear variable dif ferential

tr ansform er) produces an o u tput of 4 Vrms for a disp lacem em of25 x I0-3em .T h is voltage is m easured w ith a V fullscale voltm eter w it h I00 m ajor divisions, each m ajor d ivis ion readable to02 div isions. The resolution of th evoltm ete r isa) 0125 m m

(b) 31 25 mmc) 125 mmd) 31 25 mm

8 -F R F -M -D S A- A z

ire tions :E ach of the ne)(t Twelve ( 12) it em s consistsof tw o statem ents, one la belled as the S ta tem ent (I) and the other as S ta tem ent( II) . You are to exam ineth e se tw o statem entscarefully andse lect th e answ ers to these item susing the codes given be low:Codes:

(a ) Both Statem ent (1) an d Sta tem entII) are in div id ually true and

Sta tem ent (II) is the co rrec t explanation ofStatem ent ( )

{b) Both Statem ent (1) and S ta tem entII) are in dividually tr ue b ut

S tatem ent II) isNOT the correcte)(planation ofStatem ent (I)

(c) S tatem ent I) is true but S ta tem entII) is false(d) Statem ent I)is fa lse but S tatem ent

{II) is true109 .S ta tem ent (1) : Centre ta p tr a nsform er

is essential for a centr etapped re c tifier.

Sta tem ent I I) : In ha lf wave rectifica-tion m inimum tw odiodes are required.

110 Sta tem ent (I) : Power factor is am easure of th e powerflow in th e insulator an d sh o uld be low.

S ta tem ent m :t varies w i th th e temperature and us uallyincreases w ith th e ris e in te m perature of theinsulation.

S ta tem en t l) : An SCR has a cur ren tcontrolled ne gative resistance ch aracteristic.

S tate me nt (II ) : For a given cu r rent thevoltage can be dete rm ined w hile for ag ivenvoltage current c an n o t be determined.

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IES Electronics Paper I 2013

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