US 20080304312A1 (19) United States (12) Patent Application Publication (10) Pub. No.: US 2008/0304312 A1 Ho et al. (43) Pub. Date: Dec. 1 1, 2008 (54) RESISTANCE MEMORY WITH TUNGSTEN Publication Classi?cation COMPOUND AND MANUFACTURING (51) Int. Cl. (75) Inventors: ChiaHua Ho, Kaoshing City (TW); G11 C 11/ 00 (200601) Erh-Kun Lai, Longjing Shiang H05H 1/24 (200601) (TW) (52) US. Cl. ....................................... .. 365/148; 427/569 Correspondence Address: MACRONIX (57) ABSTRACT C/O HAYNES BEFFEL & WOLFELD LLP 1)_ ()_ BOX 366 Memory devices based on tungsten-oxide memory regions HALF MOON BAY, C A 94019 (Us) are described, along With methods for manufacturing and methods for programming such devices. The tungsten-oxide (73) Assignee: MACRONIX INTERNATIONAL memory region can be formed by oxidation of tungsten mate CO., LTD., HSINCHU (TW) rial using a non-critical mask, or even no mask at all in some embodiments. A memory device described herein includes a (21) APP1- NO-3 11/ 955,137 bottom electrode and a memory element on the bottom elec _ trode. The memory element comprises at least one tungsten (22) Flled: Dec‘ 12’ 2007 oxygen compound and is programmable to at least tWo resis Related U-s- Application Data tance states. A top electrode comprising a barrier material 1s on the memory element, the barrier material preventing (60) Provisional application No. 60/943,300, ?led on Jun. movement Of metal-ions frOm the top electrode intO the 11, 2007. memory element. i282 £2133 i284 /2114a 2210 2230 2240, \ \ \ é _ _ X x X < X X X -_-_- >< X X X X X X X X X X X X < X X X X . X X X X X X X X X X Z X < X X X X ’ X ‘X X X X X X X X X X X X X X X X X X X X X X X " X X X I X X X X X X X X X >h X X X 2) X X X X X < X X X /< ’X J X X’. X X \T‘. - . / 2112b 2112c — L/ {2221 2110b 2220 / 2290
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US 20080304312A1
(19) United States (12) Patent Application Publication (10) Pub. No.: US 2008/0304312 A1
Ho et al. (43) Pub. Date: Dec. 1 1, 2008
(54) RESISTANCE MEMORY WITH TUNGSTEN Publication Classi?cation COMPOUND AND MANUFACTURING
(51) Int. Cl. (75) Inventors: ChiaHua Ho, Kaoshing City (TW); G11 C 11/ 00 (200601)
Correspondence Address: MACRONIX (57) ABSTRACT C/O HAYNES BEFFEL & WOLFELD LLP 1)_ ()_ BOX 366 Memory devices based on tungsten-oxide memory regions HALF MOON BAY, C A 94019 (Us) are described, along With methods for manufacturing and
methods for programming such devices. The tungsten-oxide (73) Assignee: MACRONIX INTERNATIONAL memory region can be formed by oxidation of tungsten mate
CO., LTD., HSINCHU (TW) rial using a non-critical mask, or even no mask at all in some embodiments. A memory device described herein includes a
(21) APP1- NO-3 11/ 955,137 bottom electrode and a memory element on the bottom elec _ trode. The memory element comprises at least one tungsten
(22) Flled: Dec‘ 12’ 2007 oxygen compound and is programmable to at least tWo resis
Related U-s- Application Data tance states. A top electrode comprising a barrier material 1s on the memory element, the barrier material preventing
(60) Provisional application No. 60/943,300, ?led on Jun. movement Of metal-ions frOm the top electrode intO the 11, 2007. memory element.
i282 £2133 i284
/2114a 2210 2230 2240, \ \ \ é _ _
X x X < X X X -_-_- >< X X X X X X X X X
X X X < X X X X . X X X X X X X X X X
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" X X X I X X X X X X X X X
>h X X X 2) X X X X X < X X X
/< ’X J X X’. X X
\T‘. - . / 2112b 2112c —
L/
{2221 2110b 2220
/ 2290
Dec. 11,2008 Sheet 1 0f36 US zoos/0304312 A1
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