Indian Journal of Pure & Applied Physics Vol. 39, October 200 I, pp. 647-653 iT t;I "NI 'I Optical absorption and Urbach tails for I Tlo.999Q.afro.OolSe2, ITlo.99sGaPro.oosSe2 and TIGaSe2 AtatUrk University, Faculty of Sciences, Department of Physics, 25240 Erzurum, TUrkiye ) ---- Received 27 November 2000; revised 19 June 200 I; accepted 6 July 200 I C TIGaSe2, Tlo. 'l' J ,)GaPrO. (XlISe 2 and single crystals were grown by the Stockbarger method. ll1e absorp- tion measurements were carried out in these samples in temperature range 10-320 K with a step of 10K. The phonon en er- gies calculated in TIGaSe2. Tlo. 'l'J,)GaPrO.lX))SeZ and Tlo" ),),1GaPro. CMl ,l Sez are 60.0±5, 55.0±5 and 130.0±5 meV respectively. Th e tirst defect levels (n= I) have been found as 2.259. 2.235. 2.200 and 2.149 eV for Tlu., ),)< )GaPrO(XlISe 2 and 2.254 , 2.225. 2. 189 and 2.149 e V for Tlo.'l'J,GaPro. (Xl.ISe 2 at 10. 100, 200 and 300 K. At 300 K direct band gap of TIGaSez is 2. 156 eV, and indi- rect band gap is 2.075 eV. There are abrupt changes in the Urbach energy peaks for Tlo,),),)GaPrO(XlIS e2 at 100 and 200 K. and Tlo. 'l'J,IGaPrO.lXl.lSe 2 at 200 and 260 K. There is an abrupt change in the 00 values for Tlo,),),)GaPrO(XlISe Zand Tlo.'J'J5 GaPro. (X),SeZ in the temperature range 140-180 K and 220-260 K. ll1ese temperatures obtained from the changing of Urbach energy and 00 values may be phase transition temperature s. ) B i. /1 s., 3 f1 et-ed I,' c- VJ s .: _ c. __ 1 Introduction The ternary semiconducting chalcogenides with the formula ABX 2 (A, B represent metal atoms and X represents chalcogen atoms) have been studied inten- sively for years l . 3 . The ternary compounds TIGa S2 , and TIGaSe2, crystallize in two layers and contain 64 atoms 4 . Layer crystals consist of separate layers with strong (covalent) bonding between atoms within the layers. The bonding between them is weak, predomi- nantly of Van der Waals type. Such crystal structure causes the specific shape of phonon branches in layer crystals 5 . The p-type TIGaSe2 crystals were prepared by the Bridgman-Stockbarger method 6 . 7 . Large crys- tals of TIGaSe2 were grown by using the Bridgman method 8 Optical absorption spectra of CuInSe2 single crystals were measured for the samples with -0. 150 :-; x :-; 0.053 , where x represents a degree of non- stoichiometry in formula Cu l.x1nl+x Se 2' The Urbach tail was observed for all samples between 90 K and room temperature . The Urbach's energy which repre- sents an arbitrary intensity of exciton-phonon interac- tion, was almost constant for Cu-rich samples (x < 0). while it increasing In composition for the In-rich 9 ones (x > 0). The Steepness constant in Urbach rule for the absorption spectra 10 of EuSe has been deter- mined for the first time to be 0.79. The energy gap structure and the lattice dynam- . III III VI . ICS of ternary layer A B C 2 semiconductor , particularly that of TIGaSe2 known to exhibit a strong anisotropy of the electronic and vibrational spectra have been attracting considerable attention 6 . The present report gives results obtained while studying the photoelectrical properties of TIGaSe 2 crystals non-doped and doped with rare-earth impurities . The long-wavelength tail of the optical absorp- tion in TIGaSe 2 at a = 30-150 cm- I is shown to obey the Urbach rule ll . 12 in the temperature range 4.2-293 K. The anomalous behaviour of the parameters of this rule suggests the presence of two phase transitions in TIGaSe 2 at 246 K and 101 K besides the known phase transitions at 120 and 107 K. The presence of phase transitions in TIGaSe 2 at 246 K and 101 K is
7
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i. VJ c. - NISCAIRnopr.niscair.res.in/bitstream/123456789/26694/1... · The ternary compounds TIGaS2, and TIGaSe2, crystallize in two layers and contain 64 atoms4. Layer crystals
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Indian Journal of Pure & Applied Physics
Vol. 39, October 200 I, pp. 647-653
iT t;I "NI 'I
Optical absorption ~dge and Urbach tails for ITlo.999Q.afro.OolSe2, ITlo.99sGaPro.oosSe2 and TIGaSe2
~) Gi.irbulak
AtatUrk University, Faculty of Sciences, Department of Physics, 25240 Erzurum, TUrkiye )
----Received 27 November 2000; revised 19 June 200 I ; accepted 6 July 200 I
C TIGaSe2, Tlo.'l'J,)GaPrO.(XlISe2 and Tlo. 'l')~GaPrO(X)~Se2 single crystals were grown by the Stockbarger method. ll1e absorption measurements were carried out in these samples in temperature range 10-320 K with a step of 10K. The phonon energies calculated in TIGaSe2. Tlo.'l'J,)GaPrO.lX))SeZ and Tlo"),),1GaPro.CMl,lSez are 60.0±5, 55.0±5 and 130.0±5 meV respectively. The tirst defect levels (n= I) have been found as 2.259. 2.235. 2.200 and 2.149 eV for Tlu.,),)<)GaPrO(XlISe2 and 2.254 , 2.225. 2. 189 and 2.149 e V for Tlo.'l'J,GaPro.(Xl.ISe2 at 10. 100, 200 and 300 K. At 300 K direct band gap of TIGaSez is 2. 156 eV, and indirect band gap is 2.075 eV. There are abrupt changes in the Urbach energy peaks for Tlo,),),)GaPrO(XlISe2 at 100 and 200 K. and Tlo.'l'J,IGaPrO.lXl.lSe2 at 200 and 260 K. There is an abrupt change in the 00 values for Tlo,),),)GaPrO(XlISeZ and Tlo.'J'J5GaPro.(X),SeZ in the temperature range 140-180 K and 220-260 K. ll1ese temperatures obtained from the changing of Urbach energy and 0 0
values may be phase transition temperatures. )
~ B i. /1 ~ s., ~ 3 v-~ f1 et-ed I,' c- VJ s .: _ c. __ 1 Introduction
The ternary semiconducting chalcogenides with
the formula ABX2 (A, B represent metal atoms and X represents chalcogen atoms) have been studied inten
sively for years l.3. The ternary compounds TIGaS2,
and TIGaSe2, crystallize in two layers and contain 64
atoms4. Layer crystals consist of separate layers with
strong (covalent) bonding between atoms within the
layers . The bonding between them is weak, predomi
nantly of Van der Waals type. Such crystal structure
causes the specific shape of phonon branches in layer
crystals5. The p-type TIGaSe2 crystals were prepared
by the Bridgman-Stockbarger method6.7
. Large crys
tals of TIGaSe2 were grown by using the Bridgman method8
Optical absorption spectra of CuInSe2 single
crystals were measured for the samples with - 0.150 :-; x :-; 0.053 , where x represents a degree of non
stoichiometry in formula Cu l.x1nl+xSe2' The Urbach
tail was observed for all samples between 90 K and
room temperature. The Urbach's energy which repre
sents an arbitrary intensity of exciton-phonon interac-
tion, was almost constant for Cu-rich samples (x < 0).
while it increasing In composition for the In-rich9
ones (x > 0) . The Steepness constant in Urbach rule
for the absorption spectra 10 of EuSe has been deter
mined for the first time to be 0 .79.
The energy gap structure and the lattice dynam-. III III VI .
ICS of ternary layer A B C2
semiconductor,
particularly that of TIGaSe2 known to exhibit a strong
anisotropy of the electronic and vibrational spectra
have been attracting considerable attention 6. The
present report gives results obtained while studying
the photoelectrical properties of TIGaSe2 crystals
non-doped and doped with rare-earth impurities .
The long-wavelength tail of the optical absorp
tion in TIGaSe2 at a = 30-150 cm- I is shown to obey
the Urbach rule ll .12 in the temperature range 4.2-293
K. The anomalous behaviour of the parameters of this
rule suggests the presence of two phase transitions in
TIGaSe2 at 246 K and 101 K besides the known
phase transitions at 120 and 107 K. The presence of
phase transitions in TIGaSe2 at 246 K and 101 K is
648 INDIAN J PURE & APPL PHYS VOL 39, OCTOBER 2001
also comformed by means of the heat capacity meas
urement I4.15. It has been shown from transition meas
urement that TIInS2 has incommensurate phase at 220
K. It has been suggested that TIGaSe2 transforms to a
commensurate phase at 120 K.
The behaviour of several dopants such as Pr in
TIGaSe2 and other ill-ill··VI compounds is interesting
because of their Pr effect on crystal anisotropy.
2 Experimental Details
TIGaSe2, Tlo.999GaPro.ooISe2 and Tlo.995GaPro.oo5Se2 single crystals were grown by the Stocbarger method. TIGaSe2 compound has a melting point l6 of 820±5 DC. Sealed quartz ampoule was annealed at 1050 DC for 10 hr in the outgassing furnace. The temperature of quartz ampoule was decreased to room temperature in 9 hr. The mixture of stoichiometric Se-TI-Ga-Pr-Se was put into quartz ampoule which subsequently was sealed under a vacuum of 10-6 mbar. A quartz crucible (13 mm in diameter and about 250 mm in length) with carbon coating was used. The crucible was suspended in the middle of a vertical two zone furnace. The temperature of furnace was increased to 200 DC and waited for 4 hr and then heated to 320 DC again and waited for 6 hr. The temperature of furnace was increased heated to 920 DC and waited for 34 hr. The temperature of low zone of furnace was lowered to 560°C at a rate of 5 ° C/hr. Both of the furnace zones cooled to 350°C in 68 hr. The solidified ingot was cooled to room temperature in 52 hr. The prepared TIGaSe2, Tlo999GaPro.oo lSe2 and Tlo.995GaPro.oosSe2 single crystal ingots were 12 mm in diameter and about 60 mm in length. Ingots did not have cracks and voids on the surface. Absorption spectra were measured on freshly cleaved (00 I) surfaces. The TIGaSe2, Tlo 999GaPrO001 Se2 and Tlo.995GaProoo5Se2 samples used in this study were prepared in 2.0x 1.50, 1.8x2. 1 and 1.75x 1.95 mm2 in size respectively.
The absorption coefficients were obtained from
the transmission data using the relationshipl1
T = (I-R)2exp( -A)=(I-R)2exp( -ad) . .. (I)
where R is the reflectivity , A the absorbance, a. the optical absorption coefficient (cm-I) and d is the
sample thickness . The optical absorption coefficients
determined for all temperatures using the values of R at room temperature by assuming that the temperature
changes from 10 to 320 K produces a small change in
R. The multiple reflection and the interference fringes
the samples were put with a small angle with respect
to the incident beam.
The fundamental absorption edge in most semi
conductors follows the exponential law. Above the
exponential tail , the absorption coefficient of semi
conductor has been observed to obey the equation:
ali w=B(liw-Eg )" .. . (2)
where aliw is the absorption coefficient of an
angular frequency of w = 2nv , B is a constant and n
is an index which can be assumed to have values of
112, 3/2, 2 and 3, depending on the nature of elec
tronic transition responsible for the absorption. n=1/2
for the direct allowed transition (high energy part of
the spectra), n=3/2 for forbidden direc t transition ,
n=2 for the indirect allowed transition (low energy
part of the spectra) and n=3 for forb idden indirect transition 14.
An exponentially increasing absorption edge in
a number of insiulators including ionic crystals ,
semiconductors, and organic crystals follows the empirical expression 15:
[CJ(hV - E )]
a =a exp (I
" kT ... (3)
where a.., and Eo are the characteristic parame
ters of the materia l, cr is the steepness parameter, k
the Boltzmann constant and T is the temperature.
The steepness parameter CT, characterizes the
steepness of the straight line near the absorption edge
is expressed empirically as a function of tempera
ture l6:
(j = CJ" -- tanh --' (
2kT J (l1W
) )
llw" 2kT ... (4)
where <Y" is temperature-independent but mate
rial dependent parameter. Some researcher have
stated that nw" corresponded to the energy of phonons
GORBULAK: OPTICAL ABSORPTION 649
associated with Urbach tail. The absorption coeffi
cients obtained for a I s-exciton considering only the
quadratic term of the exciton-phonon interaction
operator are very similiar to those expressed by Eq. (3), and the parameter (J/kT for the interaction be
tween exciton and longitidinal-optical (LO) phonons
coincides with Eq. (4) with a constant factor l6.
The following empirical expression is often
used to describe the temperature dependence of the energy gapl?:
£ x(T) = £ x(O)-o T:2
f3 ... (5)
where Eu(T) is the energy gap at the sample <:>
temperature, Eg(O) is the energy gap at 0 K and 8 and
f3 are constants depending on the material. The con
stant (f3) is approximately equal to the Debye tem
perature e D'
The optical measurements as a function of tem
perature were made in a c losed-cycle He cryostat. For
optical measurements the Perkin Elmer UV/vS
Lambda 2S Spectrometer was used which works in
the wavelength range of 190-1100 nm. Wavelength
resolution of the spectrometer is approximately better
than ± 0.3 nm. Therefore Eg can be calculated with
an accuracy of approximately better than ± 0.003 eV
considering the wavelength accuracy of our spec
trometer.
3 Results and Discussion
This paper presents the results of the absorption
experiments and Urbach tai ls In TIGaSez,
Tlo999GaPro.oo lSe2 and Tlo995GaProoo5Sez crystals over the temperature range of 10K to room temperature.
The absorption spectra were measured on freshly cleaved surfaces with thickness 140, 142
and 140 J..lm. The freshly cleaved crystals had a mirror-like surface and there was no need of mechanical
treatment. TIGaSez, Tlo999GaProoo lSe2 and Tlo.995 GaPrO.005SeZ samples were found to be of p-type that
by using hot probe techniques. The absorption coefficient spectra have been obtained from the experimen
tal absorbance values at different sample tempera
tures using Eq. I.
The typical absorption spectra of TIGaSe2,
Tlo 999GaPrO oO ISez and Tlo 995GaProoo5Se2 samples versus temperatures at 10K and 300 K are shown in
Fig. I. The direct absorption edges of the investigated
compounds shifted considerably when the tempera
ture was changed from 10 to 320 K. As seen in
Fig. I, the absorption spectra of Tlo.999GaPro.ooISe2
and Tlo995GaProoo5Se2 single crystals, defect and
exciton level s appear at low temperatures (10-120 K).
When added praseodymium to TIGaSe2, these levels
appear. These levels for Tlo.999GaPro oo l Se2 and
Tlo 995GaProoo5Se2 were found to be 2.166 ± 0.003 and 2.181 ± 0.003 eV at 10K respectively. This result
agrees with investigation by Abdullaeva et ai. 19 and Ibragimov and Mamedov20 who have shown the exci
ton levels at 2.160, 2.181 and 2.154 eV (10 K). On
the other hand , the phonon energies calculated in
TIGaSe2, Tlo 999GaPrO OOlSe2 and Tlo.995GaPro oo<;Se2 are 60.0 ± 5,55.0 ± 5 and 130 ± 5 meV , respectively. Pr
doping in the TIGaSe2 changes the absorption coeffi
cient peak in the lower energy region. This effect
causes a change in the phonon energy.
The energy gaps of the indirect and direct opti
cal absorptions for TIGaSe2 are obtained from the
upper and lower parts of Fig. I using the dependencies (a l12 versus Jiw) and (a2 versus Jiw) by extrapo-
275
:::--- 245 1
S ~215 ...... ......
185 (J)
0 U
~ 155 0 ...... +' 0..125 H 0 rJJ
..a 95 <t:
TIGaSez 'A 0 co::x:o 10 K • 6 .... 300 K -:,.A J TIo.vevGaPro.OOISez o:::r::ITI 10 K :,. ..... 300K ~ TIo.lIIIsGaPrO.OO5Sez •• 0 6 ~ 10K ofo ~300 K •• .Ae .Ae ..... 0 e
0
0
0
2.15 2.21 2.27 Photon Energy (eV)
Fig. I - Typical absorption spectra obtained at 10 and 300 K for TIGaSc2. Tlo'J'J'JGaPro.!KIISez and Tlo.'J'J,;GaProIKI,;Se2 sampl es
650 INDIAN J PURE & APPL PHYS VOL :19, OCTOBER 2001
lation of the straight lines down to a l/2 = 0 and a 2 = 0 (Eq. 2), respectively. The direct band gaps of
TIGaSe2 are 2.269, 2.244, 2.204 and 2.156 e V at 10,
100, 200 and 300 K, respectively. The indirect band
gaps of TIGaSe2 are 2.204, 2.175, 2 .124 and 2.075
eV at 10, 100, 200 and 300 K respectively. These
result are in agreement with our previous investiga
tion of Dy doped and undoped21 p-type TIGaSe2.
These results are in agreement with literature. The
temperature dependence of the experimental and
theoretical (obtained from Eq . 5) indirect and direct
band gap have been shown in Fig . 2. This curve
represents the values of EgC7) found by Eg. (5). In addition, the temperature dependence of the indirect
and direct band gap for TIGaSe2 is presented in
Fig. 2.
The Urbach tail is observed for all samples be
tween 10-320 K. Typical Urbach tails for various
temperature are shown in Figs. 3(a), (b) and (c). It is
found that all extrapolations of the Urbach tails con
ri g. 6 - The au va lllcs ;IS a runcl ion or the ICll1pCra turc I'm
TIGaSc2' TI" "."GaPrll IHIi SeZ and TI"'1J5GaPr".I",Sc: sample,
652 IND IAN J PURE & APPL PHYS VOL 39. OCTO BER 200 1
305J~~~~~~-------------160 n....caPrO'OIISe.
275
I
S 245 o
.2 15 ...... ...... Q.)
8 185
§ 155 :;::; p.. H 125 o UJ
~ 95
~120
! * ,*
,..* 9 0
Ii' :j BO e
/: I~ , , I
,..* /6 ,DO g / * I
::J 40 " * I/)'I i :' *,' I .tl " I b., -< 0 " * I
2.00 2. U 2 .28 :' ;1 Photon energy (eV) "
TIGaSe. / = 10K " =100 K :' ~200 K " ***** 300 K ,-Tlo .... GaPrO.OO1Sea , i' -- 10 K ,". ,,"
- - 100 K .' ,
:-,~ ,~ ~gg ~ ./ /// .,' "," /
/
" "
o 0
o o
o
o 0
o o
o o
".,-:>' / / (a ) 65~'~--~--~-~"~~~~~~~~
2.01 2. 05 2 .09 2. 13 2. 17 2.2 1 2.25 2.29 Phot on En e r gy (eV)
Fig. 7 - T he optical absorption spectra ve rsus photon energy (a) TIGaScTTI II .!I')~GaPrll '( KIISc2 samples (h) Pr spec truill ror
x=O.OO I
2. 149 e V for Tl o.99sGaPro .oosS e~ at the 10, 100, 200 and 300 K. The second defect levels (n = 2) have been foun d as 2. 159 and 2. 157 eV for Tlo.99I)GaPro.oOtS e2 at the 10, 100 K and 2.180, 2. 157 and 2.178 e V for Tlo.995GaProoosSe2 at the 10, 100 and 200 K. The defect levels whi ch ex ist in TIGaSe2:Pr but not ex ist in pure TIGaSe2 can be observed with adding PI' in the range 10-320 K.
The temperature coeffi cients (8) were ca lculated for direct and indirect band gaps as 5.1 43x I 0-4
eV/K and 5.40x I 0-4 eV/K fo r TIGaSe2 fro m a sati sfac tory fittin g of the experimental curve using the above Eq.(5) and these results agree with results of Guse inov ef al . 23. However, for TI GaSe2 sample, ~ were calcul ated at 125 K and 105 K respecti ve ly.
TIGaSez and Tlo.999GaPrOOo l Se2' ,
The direct and indirect energy gaps for TI GaSe2 decrease towa rDS lower values as the increasing temperature and the temperature coefficient has a negative sign (Fig. 2). As seen from Fig. I, the indirect band gap of TIGaSe2 and Tlo.999GaPro.00 1Se2 is smaller than that of TIGaSe2. That is, the region that was calcul ated the indi rect band gap of TIGaSe2 single
305.------------------------------,
275
I S 245 o
...... ...... Q.)
215
8 185
§ 155 . ...., ,.J p.. H 125 o rJJ
~ 95
120 -r-----------,
~100
's .2.. 80
* * * " " "
o 0
o o ... * ' 6 860 *:' P.
u *: 0 I • .l 6' ~ 40 • / I ::I 0 . 0 ,+ ~ I ~ 9. .. DO
~ 20 '6. 0 "ott I~ ~ 0
~ 0 0 A .: * " I
1.97 2.07 2.17 2.27 ",1 6. I 0 TlGaSe, Photon energy (eV) . .' 6. /
~~gg ~ 'ff' ; ,,/ ,,/ : 0 ***** 300 K /" ... -;. ~-".. l:l Tlo .... GaPro.aor;Sct ,' ... I * 6. 0 -- 10 K ,', I * " 0
Fig. 8 - T he o pt ica l absorpti on spcctra versus pho ton encrgy (a) TIGaSerTIII.'n,GaPro.INI.ISc1 samplcs (b) Pr spec trum I'm
x=().005
crystal is sub-region of absorpti on spectrum. Thi s sub-region may be called the region that defects (exci ton defects) exist commonly as well. In these samples, praseodymium creates the defects in thi s region and ideal absorption spectrum will change in to the non-idea l. The reason of thi s change may be frolll the increase of Pr rati o.
The other important results are th at 1- the defect levels and defect absorpti on peaks which results from PI' has been observed (Fig. 7(b) ,and 8(b). 2- the absorpti on peak of PI' has been came to li ght (Fig. 7b and 8b). The defect levels whic l~ ex ist in TIGaSeo but not ex ist in ' pure TIGaSe2 can be observed with adding PI' in the range 10-320 K. The rare earth (RE) elements cause the new appearance and changin g of the absorption peak intensity, Tlo')99GaPrOO(llSeZ and Tlo99<)GaPr000 1Se2. As seen in Fi g. l , the reason of thi s increase in the slopes is due to di sappearing impuriti es ex isting in TIGaSe2 crystal by adding PI'. Thi s result shows that there are many impurit ies in TIGaSe2 single crystal and these impuri ties in TIGaSe2 are created by additing PI'. These are expected results because of the behaviour of the PI' atoms in the TIGaSe2.
GURBULAK: OPTICAL ABSORPTION 653
Acknowledgement
This work was supported by the Atatiirk Uni
versty Research Fund, Nos . 2000/33 and 2000/34.
References Allakhverdiev K, Sanderly R, Wodre F & Ryan I F. Phv.I·
Status Solidi (b) K5 (1978) 88. 2 Abdullaeva S G, Belenkii G L, Godzhaev M 0 & Mamedov
N T. Phys Status Solidi (b) K61 (1981)1 03. 3 Gasanly N M. Mavrin B N. Sterin Kh E, Tagiyev V I &
Khalafov Z D, Phys Statlls Solidi (b) K49 (1978) 86. 4 Henkel W, Hanchheimer H D, Carlen a C, Wenner A. Yes S
& Schnering H G, Phys Rev B, 3211 (1982) 26. 5 Belenkii G L, Abdullayeva S G, Solodukhin A V &
SUleymanov R A, Solid State COI!/lIlLlIl , 44 1613 (1982) 12. 6 Bagirzade E F & Aliev V A, Sov Phys Semicolld. 20 952
(1986)8 . 7 Abutalybov G I, Neimanzade I K. Razbirin B S, Salaev E Y
& Staruklin N, Sov Phys Senlicolld, 201063 (1986) 9. 8 Banis Y, Brilingos A, Grigos I & Guseinov G, SO li. Phys.
Solid State, II 1906 (1987) 29. 9 Shoida T, Chichibu S. Irie T & Nakanishi H. 1 Ap/,l PhI'.\'.
801106 (1996) 2.
10 Akimoto R, Kobayashi M, & SlIziki T. 1. Pin's. COlllIl'ns Maller. 105 (1996)8 .
II Allakhverdiev K R. Aldzhonov M A. Mamedov T G. & Salaev E Yll. Solid State Comlllull. 5 295 ( 1986) 5R .
12 DlIrnevY. KlIlbllzhev B G. Malsagov A U. Rabkin L M. Tosgashev Y I & YlInyk Y. Phvs StatLlS Solidi (iJ). 51 7 .. (1989). 153
13 Moss T S. Optical Process /11 Selllicondllc/or.l· (BlIllerwonhs. London). (1959) 247.
14 Smith R A. Phil Mag SlIppl. 8 1 ( 1953) 2. 15 Urbach F. Phl'sRell 1324( 1953)92. 16 Manienssen H W, .I PhYJ Chelll Solids. 257 ( 1957) 2. 17 Varshni Y P. Phl'sica. 149 (1967) 34. 18 GlIseinov G D, Ahstract of the PhD Th esis, Vilnius. SSCD
(1963). ~I 19 Abdllllaeva S G. Belenkii S G. Godzhaev M 0 & Mamcdov
N T, Phys Status Solidi (b) K61 (1981) 103 . 20 Ibragimov T D & Mamedov N T. Pin's Status Solidi (h ).
K33 (1988)145. 21 GUrbulak B. Applied Physics A. 353 ( 1999) 68 . 22 Aldzhanov M A, Guseinov N G & Mamedov Z N. Phr.\·
Status Solidi (a). K 145 (1987) I 00. 23 Guseinov G. GlIseinov G D. Gasanov N Z & Kyazi nov S B.