http://www.TEAsystems.com Terrence E. Zavecz [email protected]Weir TR Temporal and Sequential Data Analysis and Performance Matching Interfaces of Thermal, Probe and CD Uniformity data Data Loading speed increase 5x to 8x Improved wafer modeling Improved intra-site data interpolation Wafer-Contour plot speed improvement 12x to 20x Improvements with Release 2.0
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Can use Weir TR Temporal Analysis calculated variablesExample:
Cumulative-Energy vs feature sizeMatch any metrology, probe or sequence data
Weir TRRange response by sensor over time
Weir TR: MatchingTemperature-to-BCD Feature
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Weir TR Time Response Analysis Data sources
Accept sequenced or time based data from any metrology source
Clean-Track, Develop & In-line Data
Scanner log and metrology
Metrology & Probe Data
CD-SEM and Scatter
Wafer & Substrate Sensor
Weir PW Process Derived Analyses &
Variables
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Weir TR Temporal AnalysisProduct Features
Weir TR; Temporal Analysis Time or Sequence dependent analysis of Temperature or any metrology variable Automated time-phase deconvolution of constant and rise/fall segments Energy or (Time* Temperature) calculation with temperature threshold Local velocity or rate-calculations of rate of local change with time Automated whole-substrate or individual sensor response Critical cycle-point analysis Substrate contour mapping/vectoring
Matrix display Single time-slice Animation of contour response Variables used and derived include temperature, rate-of-change, acceleration-of-
change, Energy, Cumulative Energy
Sensor change-rate vs Temperature
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Thermal response ranges
Displays variation at each sensor relative to average temperature of wafer
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Automated Phase Deconvolution
Statistics show four thresholds which are plotted as yellow-filled squares.
Range of data across wafer @ time is plotted by blue circles
Max Temp
Min Temp
Phase change
Range
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Critical phase evaluation by sensor point
Customize the sampling or graphic to zoom-in on time/sequence critical segments
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Cumulative Energy
Integrated energy at each sensor shown and the phase in which it
occurred Graphics are provided by:
Sensor/phase Rise time/sensor & phase Substrate Response as a
function of Radius
Integrated energy at each sensor shown and the phase in which it
occurred Graphics are provided by:
Sensor/phase Rise time/sensor & phase Substrate Response as a
function of Radius
Graphics selection interface tabs
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Temperature Mean, Rise, Phase Length, Start Value
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Local Rate Change Variation
Local Rate Change plotted at 8 times over critical final rise
Notice initial rise on left side of wafer at 2295 seconds with a slope range from 0.217 to 0.256 dec/sec
rise
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Vector/Contour mapping of user selected time-slices
Three vector plots of accumulated energy
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Local Acceleration, Temperature & Rate-of-Change
Data taken at 2370 seconds
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Localized Rise/Fall Plot vs Variable
Details process-critical response to any variable such as temperature
Raw Temp vs Time Cycle
Mouse-zoomed response at critical
settling point
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Threshold Analysis data
Data from the “RiseTimesPhase” worksheet for 16 sensors Transition points are marked on the thermal curve as black squares with a yellow center (previous slide) Data stored on Weir TR Spreadsheet in data workbook
Temperature variation
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Separate window display of Thermal variation
Matrix view Animation also
provided
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Weir TR MatchingProduct Features
Weir TR; Matching Match any two Temporal/Metrology/Log sources Match Bake, Temperature,Cumulative Energy ,
Process etc uniformity Infinitely-Variable Rotation and Notch Alignment
Controls Features Includes:
Automated data culling Histograms, contour, vector, XY, etc plots. Individual time-slice or integrated analysis Model across-wafer variation User-customized graphics Easy plot/copy into reports/html interfaces Reports and data stored in standardized workbook
format
Across-Wafer ModeledBottom CD Variation
Across two Bake Plates
(Scatter data)
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Weir TR Time Response Analysis Data sources
Any metrology, sequenced or log based data
Clean-Track, Develop & In-line Data
Scanner log and metrology
Metrology & Probe Data
CD-SEM and Scatter
Wafer & Substrate Sensor
Weir PW Process Derived Analyses &
Variables
Weir TR Temporal Analysis Variables
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Basic Operation of Weir TR Matching
Wafers from two separate bake plates shown
Provides a basic visual & statistical match comparison
Covariance matching over time/space
Compare static or sequential data For example; Bottom
CD to Temperature or Cumulative Energy on the substrate
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Variable Culling
BCD based culling removed 309 data points to properly display wafer-graphic shown on left
Easily removed Intra-Field variation and improves accuracy
Original BCD data distribution
Command used to generate histogram
And then apply the wafer model
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Individual graphics
Comparison of BCD variation for wafers generated on two separate hot-plate Post Exposure Bakes
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Variation by X-location on wafer
Vector
Contour
Radial
XY Horizontal
XY Vertical
VS Time/sequence
Data here not modeled, this is raw data
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Modeled wafer variation
BCD Modeled variation due to slow across-wafer changes Data from two bake plates
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BCD wafer fit to temperature
Response as a function of X position on the wafer On-Wafer Temperature at 135.52 sec vs final Wafer-Modeled BCD 2nd order line fitted to each dataset using mouse interface
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Weir TR calculated Cumulative Energy and BCD Variation
Contour grid (left) can be turned on/off
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Thermal-Time Cycle & BCD Information
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Thermal Energy & wafer-modeled BCD Problem
OnWafer probe and CD-SEM oriented wafer differently
Left=Thermal vector plot Right= Scatter-tool
Contour
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Thermal rotated by –135 degrees
Data Rotation interface allowed thermal data to be rotated by –135 degrees to provide improved alignment
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PEB and feature- BCD as contour plots Weir TR calculated
Accumulated Energy from PEB cycle matched to BCD variation
Performed after rotation
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Radial Variation
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Horizontal Variation: Temperature vs BCD modeled
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Modeled Comparison of Temperature & Top CD (TCD)
Analysis used the BCD variable to remove “poor” metrology Any variable such as
MSE, TCD, BARC, SWA etc can be used to cull data
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