Highly Linear Power Amplifiers for Broadband Wireless Applications Power Amplifiers for Wireless Communications Workshop September 9, 2002 M. Siddiqui, M. Quijije, A. Lawrence, B. Pitman, R. Katz, P. Tran, S. Din, L. Callejo, N. Yamamoto, K. Johnson, R Lai, R. Tsai and D. Streit
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Highly Linear Power Amplifiers for Broadband Wireless Applications
Power Amplifiers for Wireless Communications Workshop September 9, 2002 M. Siddiqui, M. Quijije, A. Lawrence, B. Pitman, R. Katz, P. Tran, S. Din, L. Callejo, N. Yamamoto, K. Johnson, R Lai, R. Tsai and D. Streit. Highly Linear Power Amplifiers for Broadband Wireless Applications. - PowerPoint PPT Presentation
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Highly Linear Power Amplifiers for Broadband Wireless Applications
Power Amplifiers for Wireless Communications Workshop
September 9, 2002
M. Siddiqui, M. Quijije, A. Lawrence, B. Pitman, R. Katz, P. Tran, S.
Din, L. Callejo, N. Yamamoto, K. Johnson, R Lai, R. Tsai and D. Streit
2
Applications Landscape
Higher data rates dictate highly linear transmit chainsMajor contributor to linearity and cost is the driver / power amplifier combination.
Higher data rates dictate highly linear transmit chainsMajor contributor to linearity and cost is the driver / power amplifier combination.
3
• 0.15 um T-gate process
• Breakdown > 8 Volts
• fT > 85 GHz at Vds > 4 volts
• Gm > 500 mS/mm
• Imax > 500 mA/mm
• 4mil substrate thickness
• Flight qualified, commercially
proven processGaAs substrate
undoped AlGaAs
undoped AlGaAs
n+-GaAs
undoped InGaAsSi plane doping
Source DrainGate
TRW Pseudomorphic HEMT Process
4
1.E+02
1.E+03
1.E+04
1.E+05
1.E+06
1.E+07
1.E+08
1.E+09
1.E+10
1.E+11
1.5 2 2.51000/T
MT
F
• Ea 1.6 eV, Sigma = 0.6• MTF 6X1010 hours at Tj=125oC
TRW 0.15m PHEMT Process Reliability
Typical benchmark,1X106 hrs at 125C
1
10
100
1000
10000
100000
-2.5 -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 2.5
% Cumulative Failure
TT
F,
ho
urs
Ta=210C
Ta=265C
Ta=235C
Ta=250C
5
Summary of Circuit Performance
Part Name APH478 30 GHz
Cell
APH496 APH497 APH502 APH473 APH474
Freq
(GHz)
17-20 29-32 28-31 32-35 34-36 37-40 40-44
Gain (dB) 16 8 16 16 15 15 15
P1dB (dBm) 30.3 30.2 26.8 26.5 30.5 29.5 29.5
Density
@ P1dB
(Mw/mm)
446 436 443 414 519 400 400
P3dB (dBm) 31.5 31.5 28 28 31.5 31 31
Density
@ P3dB
(Mw/mm)
588 588 584 584 588 582 582
IDC @ 5V
(mA)
900 600 540 540 810 1080 1080
Die Size
(mm2)
5.02 1.86 2.61 2.61 3.55 4.50 4.25
State of the art output power density enables smaller die size and less DC power dissipation
State of the art output power density enables smaller die size and less DC power dissipation